KR20010113316A - 고유전체 캐패시터 및 그 제조 방법 - Google Patents
고유전체 캐패시터 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20010113316A KR20010113316A KR1020000033609A KR20000033609A KR20010113316A KR 20010113316 A KR20010113316 A KR 20010113316A KR 1020000033609 A KR1020000033609 A KR 1020000033609A KR 20000033609 A KR20000033609 A KR 20000033609A KR 20010113316 A KR20010113316 A KR 20010113316A
- Authority
- KR
- South Korea
- Prior art keywords
- high dielectric
- capacitor
- manufacturing
- diffusion barrier
- film
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 230000035515 penetration Effects 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910019899 RuO Inorganic materials 0.000 claims description 4
- 229910003071 TaON Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 16
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 15
- 230000006866 deterioration Effects 0.000 abstract description 5
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (12)
- 금속으로 이루어진 저장 전극 및 플레이트 전극과 상기 전극간에 형성된 고유전체막으로 이루어지는 캐패시터에 있어서,상기 저장 전극의 측부 및 상기 플레이트 전극의 상부에 가스 이온의 침투를 방지하기 위한 확산 방지막이 각각 형성된 것을 특징으로 하는 고유전체 캐패시터.
- 제 1 항에 있어서,상기 확산 방지막은 Al2O3로 이루어지며 50 내지 200Å의 두께로 형성되는 것을 특징으로 하는 고유전체 캐패시터.
- 접합부가 형성된 반도체 기판상에 절연막을 형성한 후 상기 접합부가 노출되도록 상기 절연막을 패터닝하여 콘택홀을 형성하고 상기 콘택홀내에 플러그를 형성하는 단계와,상기 플러그를 포함하는 전체 구조 상부에 식각 방지층, 제 1 확산 방지막 및 산화막을 순차적으로 형성한 후 저장 전극용 마스크를 이용하여 상기 산화막, 제 1 확산 방지막 및 식각 방지층을 순차적으로 패터닝하는 단계와,상기 산화막, 제 1 확산 방지막 및 식각 방지층의 패터닝된 부분에 상기 플러그와 접속되도록 저장 전극을 형성하는 단계와,상기 저장 전극을 포함하는 전체 상부면에 유전체막, 플레이트 전극 및 제 2 확산 방지막을 순차적으로 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 플러그는 폴리실리콘 및 Ti/TiN이 적층된 구조로 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 식각 방지층은 질화막으로 이루어지며 500 내지 1000Å의 두께로 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 제 1 및 제 2 확산 방지막은 Al2O3로 이루어지며 50 내지 200Å의 두께로 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 산화막은 5000 내지 12000Å의 두께로 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 저장 전극 및 플레이트 전극은 Ru, Pt, RuO2, Ir, IrO2, W, WN, TiN중 어느 하나의 금속으로 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 저장 전극은 200 내지 400Å의 두께로 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 유전체막은 화학기상증착법으로 고유전체를 100 내지 250Å의 두께로 증착한 후 350 내지 450℃의 온도에서 저온 열처리하므로써 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 3 항에 있어서,상기 유전체막은 화학기상증착법으로 고유전체를 100 내지 250Å의 두께로 증착한 후 550 내지 700℃의 온도에서 고온 열처리하므로써 형성되는 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
- 제 10 또는 11 항에 있어서,상기 고유전체는 Ta2O5, TaON 및 BST중 어느 하나인 것을 특징으로 하는 고유전체 캐패시터의 제조 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0033609A KR100402943B1 (ko) | 2000-06-19 | 2000-06-19 | 고유전체 캐패시터 및 그 제조 방법 |
JP2001069577A JP4812949B2 (ja) | 2000-06-19 | 2001-03-13 | キャパシタの製造方法 |
US09/855,973 US6579755B2 (en) | 2000-06-19 | 2001-05-15 | High dielectric capacitor and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0033609A KR100402943B1 (ko) | 2000-06-19 | 2000-06-19 | 고유전체 캐패시터 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20010113316A true KR20010113316A (ko) | 2001-12-28 |
KR100402943B1 KR100402943B1 (ko) | 2003-10-30 |
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KR10-2000-0033609A KR100402943B1 (ko) | 2000-06-19 | 2000-06-19 | 고유전체 캐패시터 및 그 제조 방법 |
Country Status (3)
Country | Link |
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US (1) | US6579755B2 (ko) |
JP (1) | JP4812949B2 (ko) |
KR (1) | KR100402943B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100408742B1 (ko) * | 2001-05-10 | 2003-12-11 | 삼성전자주식회사 | 집적회로소자의 캐패시터 및 그 제조방법 |
JP2005101213A (ja) * | 2003-09-24 | 2005-04-14 | Toshiba Corp | 半導体装置の製造方法 |
US7105400B2 (en) * | 2003-09-30 | 2006-09-12 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
US7282757B2 (en) * | 2003-10-20 | 2007-10-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | MIM capacitor structure and method of manufacture |
KR100728962B1 (ko) * | 2004-11-08 | 2007-06-15 | 주식회사 하이닉스반도체 | 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법 |
US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
KR102085523B1 (ko) | 2013-10-02 | 2020-03-06 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3362712B2 (ja) * | 1990-08-21 | 2003-01-07 | セイコーエプソン株式会社 | 半導体装置、それを用いた半導体メモリ及びcmos半導体集積回路並びにその半導体装置の製造方法 |
JPH07111318A (ja) * | 1993-10-12 | 1995-04-25 | Olympus Optical Co Ltd | 強誘電体メモリ |
JPH1079491A (ja) * | 1996-07-10 | 1998-03-24 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JPH118355A (ja) * | 1997-06-16 | 1999-01-12 | Nec Corp | 強誘電体メモリ |
JP3362109B2 (ja) | 1997-06-25 | 2003-01-07 | 大和紡績株式会社 | 抄紙用ドライヤーカンバス |
JP3029815B2 (ja) | 1997-07-08 | 2000-04-10 | 株式会社エイ・ティ・アール環境適応通信研究所 | ルーチング方法、ルータ装置及びルーチングプログラムを記録した記録媒体 |
KR100269306B1 (ko) * | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
KR100269309B1 (ko) * | 1997-09-29 | 2000-10-16 | 윤종용 | 고집적강유전체메모리장치및그제조방법 |
JPH11121704A (ja) * | 1997-10-21 | 1999-04-30 | Sony Corp | 誘電体キャパシタおよびその製造方法 |
JPH11126881A (ja) * | 1997-10-23 | 1999-05-11 | Hitachi Ltd | 高強誘電体薄膜コンデンサを有する半導体装置及びその製造方法 |
JPH11145410A (ja) * | 1997-11-13 | 1999-05-28 | Toshiba Corp | 半導体装置およびその製造方法 |
US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
US6184074B1 (en) * | 1997-12-17 | 2001-02-06 | Texas Instruments Incorporated | Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS |
JP3599548B2 (ja) * | 1997-12-18 | 2004-12-08 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
US6177351B1 (en) * | 1997-12-24 | 2001-01-23 | Texas Instruments Incorporated | Method and structure for etching a thin film perovskite layer |
KR100291181B1 (ko) * | 1997-12-27 | 2001-07-12 | 박종섭 | 강유전체메모리소자제조방법 |
JPH11297959A (ja) * | 1998-04-15 | 1999-10-29 | Ebara Corp | 高・強誘電体メモリ素子の構造及びその製造方法 |
JP4809961B2 (ja) * | 1998-08-07 | 2011-11-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR20000018995A (ko) * | 1998-09-08 | 2000-04-06 | 윤종용 | 강유전체 메모리 제조를 위한 수소 열화 방지 장치 및 제조 방법 |
JP4737789B2 (ja) * | 1999-06-18 | 2011-08-03 | 株式会社東芝 | 半導体装置 |
KR100311050B1 (ko) * | 1999-12-14 | 2001-11-05 | 윤종용 | 커패시터의 전극 제조 방법 |
-
2000
- 2000-06-19 KR KR10-2000-0033609A patent/KR100402943B1/ko not_active IP Right Cessation
-
2001
- 2001-03-13 JP JP2001069577A patent/JP4812949B2/ja not_active Expired - Fee Related
- 2001-05-15 US US09/855,973 patent/US6579755B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20010053058A1 (en) | 2001-12-20 |
JP2002026295A (ja) | 2002-01-25 |
KR100402943B1 (ko) | 2003-10-30 |
JP4812949B2 (ja) | 2011-11-09 |
US6579755B2 (en) | 2003-06-17 |
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