KR20010099754A - 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 - Google Patents
고분자 화합물, 레지스트 재료 및 패턴 형성 방법 Download PDFInfo
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- KR20010099754A KR20010099754A KR1020010022832A KR20010022832A KR20010099754A KR 20010099754 A KR20010099754 A KR 20010099754A KR 1020010022832 A KR1020010022832 A KR 1020010022832A KR 20010022832 A KR20010022832 A KR 20010022832A KR 20010099754 A KR20010099754 A KR 20010099754A
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- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
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Abstract
Description
실시예 | 수지 | 산발생제 | 용해 제어제 | 염기성 화합물 | 용제 | 최적 노광량 | 해상도 | 형상 |
II-1 | 중합체 2 (80) | PAG 2(1) | TEA (0.063) | PGMEA (480) | 16.0 | 0.15 | 직사각형 | |
II-2 | 중합체 3 (70) | PAG 2(1) | DRR 4 (10) | TMMEA (0.118) | PGMEA (480) | 15.0 | 0.15 | 직사각형 |
Claims (5)
- 하기 화학식 1 및 2로 표시되는 단위를 포함하는 중량 평균 분자량 1,000 내지 500,000의 고분자 화합물.<화학식 1><화학식 2>식 중, R1은 수소 원자, 메틸기 또는 CH2CO2R3을 나타내고, R2는 수소 원자, 메틸기 또는 CO2R3을 나타내고, R3은 탄소수 1 내지 15의 직쇄상, 분지상 또는 환상의 알킬기를 나타내고, R4는 할로겐 원자 또는 탄소수 1 내지 15의 아실옥시기, 알콕시카르보닐옥시기 또는 알킬술포닐옥시기를 나타내고, 구성 탄소 원자 상의 수소원자 중 일부 또는 전부가 할로겐 원자에 의해 치환될 수도 있으며, R5는 수소 원자 또는 탄소수 1 내지 10의 직쇄상, 분지상 또는 환상의 알킬기를 나타내고, R6은 산불안정기를 나타내며, Z는 단결합 또는 탄소수 1 내지 10의 직쇄상, 분지상 또는 환상의 2가의 탄화수소기를 나타내고, k는 0 또는 1이며, W는 -O- 또는 -(NR)-를 나타내고, R은 수소 원자 또는 탄소수 1 내지 15의 직쇄상, 분지상 또는 환상의 알킬기를 나타낸다.
- 제1항에 있어서, 상기 화학식 1로 표시되는 단위가 하기 화학식 3 또는 4로 표시되는 단위인 것을 특징으로 하는 고분자 화합물.<화학식 3><화학식 4>식 중, R1내지 R5, Z, k는 상기와 동일하고, R7내지 R10은 각각 독립적으로 탄소수 1 내지 8의 직쇄상, 분지상 또는 환상의 알킬기 또는 탄소수 6 내지 20의 치환될 수도 있는 아릴기를 나타내며, Y는 헤테로 원자를 포함할 수도 있는 탄소수 4 내지 15의 2가의 탄화수소기를 나타내고, 양단에서 결합하는 탄소 원자와 함께 환을 형성한다.
- 제1항 또는 제2항에 있어서, 하기 화학식 5 내지 8로 표시되는 단위 중 1종 또는 2종 이상을 추가로 포함하는 것을 특징으로 하는 고분자 화합물.<화학식 5><화학식 6><화학식 7><화학식 8>식 중, R1, R2, k는 상기와 동일하고, R11내지 R14중 1개 이상은 탄소수 1 내지 15의 카르복시기 또는 수산기를 함유하는 1가의 탄화수소기를 나타내고, 나머지는 각각 독립적으로 수소 원자 또는 탄소수 1 내지 15의 직쇄상, 분지상 또는 환상의 알킬기를 나타내고, R11내지 R14는 서로 환을 형성할 수도 있으며, 그 경우 R11내지 R14중 1개 이상은 탄소수 1 내지 15의 카르복시기 또는 수산기를 함유하는 2가의 탄화수소기를 나타내고, 나머지는 각각 독립적으로 단결합 또는 탄소수 1 내지 15의 직쇄상, 분지상 또는 환상의 알킬렌기를 나타내며, R15내지 R18중 1개 이상은 탄소수 2 내지 15의 -CO2- 부분 구조를 함유하는 1가의 탄화수소기를 나타내고, 나머지는 각각 독립적으로 수소 원자 또는 탄소수 1 내지 15의 직쇄상, 분지상 또는 환상의 알킬기를 나타내며, R15내지 R18은 서로 환을 형성할 수도 있고, 그 경우 R15내지 R18중 1개 이상은 탄소수 1 내지 15의 -CO2- 부분 구조를 함유하는 2가의 탄화수소기를 나타내며, 나머지는 각각 독립적으로 단결합 또는 탄소수 1 내지 15의 직쇄상, 분지상 또는 환상의 알킬렌기를 나타내고, R19는 탄소수 7 내지 15의 다환식 탄화수소기 또는 다환식 탄화수소기를 함유하는 알킬기를 나타내며, R20은 산불안정기를 나타내고, X는 -CH2- 또는 -O-를 나타낸다.
- 제1항 내지 제3항 중 어느 한 항에 기재된 고분자 화합물을 함유하는 것을 특징으로 하는 레지스트 재료.
- 제4항에 기재된 레지스트 재료를 기판 상에 도포하는 공정과, 가열 처리 후 포토마스크를 통하여 고에너지선 또는 전자선으로 노광하는 공정과, 필요에 따라 가열 처리한 후 현상액을 사용하여 현상하는 공정을 포함하는 것을 특징으로 하는 패턴 형성 방법.
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JP2000-129042 | 2000-04-28 | ||
JP2000129042 | 2000-04-28 |
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KR20010099754A true KR20010099754A (ko) | 2001-11-09 |
KR100584070B1 KR100584070B1 (ko) | 2006-05-29 |
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US (1) | US6566038B2 (ko) |
EP (1) | EP1150166B1 (ko) |
KR (1) | KR100584070B1 (ko) |
DE (1) | DE60131921T2 (ko) |
TW (1) | TWI284782B (ko) |
Cited By (1)
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KR101311599B1 (ko) * | 2007-05-02 | 2013-09-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 증폭형 레지스트 조성물의 제조 방법 |
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US20070122755A1 (en) * | 1999-10-26 | 2007-05-31 | Yasuhiro Yoshioka | Heat developable photosensitive material including a combination of specified reducing agents |
US6777157B1 (en) * | 2000-02-26 | 2004-08-17 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising same |
US6566037B2 (en) * | 2000-03-06 | 2003-05-20 | Shin-Etsu Chemical Co., Ltd. | Polymer, resist composition and patterning process |
JP3997381B2 (ja) * | 2000-04-28 | 2007-10-24 | 信越化学工業株式会社 | 脂環構造を有する新規エステル化合物及びその製造方法 |
US6492090B2 (en) * | 2000-04-28 | 2002-12-10 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
US6306554B1 (en) * | 2000-05-09 | 2001-10-23 | Shipley Company, L.L.C. | Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same |
JP3956089B2 (ja) * | 2000-08-08 | 2007-08-08 | 信越化学工業株式会社 | アセタール化合物及びその製造方法 |
TW594410B (en) * | 2000-09-07 | 2004-06-21 | Shinetsu Chemical Co | Resist compositions and patterning process |
EP1195390B1 (en) | 2000-09-14 | 2004-12-08 | Shin-Etsu Chemical Co., Ltd. | Polymer, resist composition and patterning process |
US6660448B2 (en) * | 2000-11-10 | 2003-12-09 | Shin-Etsu Chemical Co., Ltd. | Polymer, resist composition and patterning process |
JP4469080B2 (ja) * | 2000-12-13 | 2010-05-26 | 信越化学工業株式会社 | 脂環構造を有する新規第三級アルコール化合物 |
KR20050098955A (ko) * | 2003-02-21 | 2005-10-12 | 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. | 원자외선 리소그래피용 포토레지스트 조성물 |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
DE102004046405A1 (de) * | 2004-09-24 | 2006-04-06 | Infineon Technologies Ag | Copolymer, Zusammensetzung enthaltend das Copolymer und Verfahren zur Strukturierung eines Substrats unter Verwendung der Zusammensetzung |
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RU2199773C2 (ru) | 1997-09-12 | 2003-02-27 | З Би. Эф. Гудрич Кампэни | Фоторезистная композиция |
KR100265941B1 (ko) * | 1998-05-19 | 2000-09-15 | 박찬구 | 레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 포지티브 레지스트 조성물 |
KR100271419B1 (ko) | 1998-09-23 | 2001-03-02 | 박찬구 | 화학증폭형 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
KR100274119B1 (ko) | 1998-10-08 | 2001-03-02 | 박찬구 | 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
KR100332463B1 (ko) * | 1999-12-20 | 2002-04-13 | 박찬구 | 노보난계 저분자 화합물 첨가제를 포함하는 화학증폭형레지스트 조성물 |
KR100384810B1 (ko) * | 2000-02-16 | 2003-05-22 | 금호석유화학 주식회사 | 저분자 화합물 첨가제를 포함하는 화학증폭형 레지스트조성물 |
US6492090B2 (en) * | 2000-04-28 | 2002-12-10 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
JP3928690B2 (ja) * | 2000-07-06 | 2007-06-13 | 信越化学工業株式会社 | 脂環構造を有する新規ラクトン化合物及びその製造方法 |
-
2001
- 2001-04-26 TW TW090110040A patent/TWI284782B/zh not_active IP Right Cessation
- 2001-04-26 US US09/842,396 patent/US6566038B2/en not_active Expired - Lifetime
- 2001-04-27 KR KR1020010022832A patent/KR100584070B1/ko active IP Right Grant
- 2001-04-27 DE DE60131921T patent/DE60131921T2/de not_active Expired - Lifetime
- 2001-04-27 EP EP01303868A patent/EP1150166B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101311599B1 (ko) * | 2007-05-02 | 2013-09-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 화학 증폭형 레지스트 조성물의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
TWI284782B (en) | 2007-08-01 |
EP1150166A1 (en) | 2001-10-31 |
US20010051316A1 (en) | 2001-12-13 |
US6566038B2 (en) | 2003-05-20 |
DE60131921D1 (de) | 2008-01-31 |
EP1150166B1 (en) | 2007-12-19 |
DE60131921T2 (de) | 2009-01-02 |
KR100584070B1 (ko) | 2006-05-29 |
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