KR20010096520A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
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- KR20010096520A KR20010096520A KR1020000073660A KR20000073660A KR20010096520A KR 20010096520 A KR20010096520 A KR 20010096520A KR 1020000073660 A KR1020000073660 A KR 1020000073660A KR 20000073660 A KR20000073660 A KR 20000073660A KR 20010096520 A KR20010096520 A KR 20010096520A
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- South Korea
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- type diffusion
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 abstract description 27
- 230000005684 electric field Effects 0.000 abstract description 24
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 195
- 239000010410 layer Substances 0.000 description 162
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000000926 separation method Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (3)
- 반도체 장치에 있어서,제1 도전형의 반도체 기판(1)과,상기 반도체 기판(1) 상에 직접 접하여 형성된 제2 도전형의 제1 영역(2)과,상기 제1 영역(2)의 표면 및 그 근방에 형성된 제2 도전형의 제2 영역(6a ∼ 6d)과,상기 제2 영역(6a ∼ 6d)을 주위에서 둘러싸도록 상기 제1 영역(2)의 표면 및 그 근방에 형성된 제1 도전형의 제3 영역(5a ∼ 5c)과,상기 제1 영역(2)과 상기 제2 영역(6a ∼ 6d) 간에 위치하는 상기 제3 영역(5a ∼ 5c)의 표면 상에 절연막을 개재시켜서 형성된 제1 전극부(8a ∼ 8e)와,상기 제2 영역(6a ∼ 6d)에 접속된 제2 전극부(9)와,상기 제3 영역(5a ∼ 5c)과 거리를 두어 상기 제1 영역(2)에 접속된 제3 전극부(10)와,상기 제3 전극부(10)와 상기 제3 영역(5a ∼ 5c) 간의 상기 제1 표면 및 그 근방에 형성된 제1 도전형의 제4 영역(7)을 포함하고,상기 제4 영역(7)은 전류가 흐르는 방향과 교차하는 방향에 따라서 그 깊이가 변화하도록 형성되어 있는것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 제3 전극부(10)를 주위에서 둘러싸도록 상기 제1 영역(2)의 표면 및 그 근방에 형성된 제1 도전형의 제5 영역을 포함하는 것을 특징으로 하는 반도체 장치.
- 반도체 장치에 있어서,제1 도전형의 반도체 기판(1)과,상기 반도체 기판(1) 상에 직접 접하여 형성된 제2 도전형의 제1 영역(2)과,상기 제1 영역(2)의 표면 및 그 근방에 형성된 제2 도전형의 제2 영역(6)과,상기 제2 영역(6)을 주위에서 둘러싸도록 상기 제1 영역(2)의 표면 및 그 근방에 형성된 제1 도전형의 제3 영역(5)과,상기 제3 영역(5)에 접속되는 제1 전극부(12)와,상기 제2 영역(6)에 접속된 제2 전극부(11)와,상기 제3 영역(5)과 거리를 두어 상기 제1 영역(2)에 접속된 제3 전극부(13)와,상기 제3 전극부(13)와 상기 제3 영역(5) 간의 상기 제1 영역(2)의 표면 및 그 근방에 형성된 제1 도전형의 제4 영역(7)을 포함하고,상기 제4 영역(7)은 전류가 흐르는 방향과 교차하는 방향에 따라서 그 깊이가 변화하도록 형성되어 있는것을 특징으로 하는 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000112174A JP2001298183A (ja) | 2000-04-13 | 2000-04-13 | 半導体装置 |
JP2000-112174 | 2000-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010096520A true KR20010096520A (ko) | 2001-11-07 |
KR100346339B1 KR100346339B1 (ko) | 2002-08-01 |
Family
ID=18624389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000073660A KR100346339B1 (ko) | 2000-04-13 | 2000-12-06 | 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6878998B1 (ko) |
JP (1) | JP2001298183A (ko) |
KR (1) | KR100346339B1 (ko) |
DE (1) | DE10054636B4 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100422393B1 (ko) * | 2002-01-17 | 2004-03-11 | 한국전자통신연구원 | 격자형 표류 영역 구조를 갖는 이디모스 소자 및 그 제조방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8076725B2 (en) * | 2007-05-18 | 2011-12-13 | Renesas Electronics Corporation | Semiconductor device and method for manufacturing the same |
US9634135B2 (en) * | 2012-03-02 | 2017-04-25 | Microchip Technology Incorporated | Power field effect transistor |
US9704947B2 (en) * | 2013-06-27 | 2017-07-11 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing same |
JP6448704B2 (ja) * | 2017-04-13 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61207066A (ja) * | 1985-03-12 | 1986-09-13 | Sanyo Electric Co Ltd | バイポ−ラトランジスタ |
JP3158738B2 (ja) * | 1992-08-17 | 2001-04-23 | 富士電機株式会社 | 高耐圧mis電界効果トランジスタおよび半導体集積回路 |
JP3400025B2 (ja) | 1993-06-30 | 2003-04-28 | 株式会社東芝 | 高耐圧半導体素子 |
-
2000
- 2000-04-13 JP JP2000112174A patent/JP2001298183A/ja active Pending
- 2000-09-13 US US09/661,035 patent/US6878998B1/en not_active Expired - Lifetime
- 2000-11-03 DE DE10054636A patent/DE10054636B4/de not_active Expired - Lifetime
- 2000-12-06 KR KR1020000073660A patent/KR100346339B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100422393B1 (ko) * | 2002-01-17 | 2004-03-11 | 한국전자통신연구원 | 격자형 표류 영역 구조를 갖는 이디모스 소자 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2001298183A (ja) | 2001-10-26 |
DE10054636A1 (de) | 2001-10-25 |
KR100346339B1 (ko) | 2002-08-01 |
US6878998B1 (en) | 2005-04-12 |
DE10054636B4 (de) | 2007-07-12 |
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