KR20010089757A - 레이저 다이오드 장치 및 상기 장치를 제조하기 위한 방법 - Google Patents

레이저 다이오드 장치 및 상기 장치를 제조하기 위한 방법 Download PDF

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Publication number
KR20010089757A
KR20010089757A KR1020017008462A KR20017008462A KR20010089757A KR 20010089757 A KR20010089757 A KR 20010089757A KR 1020017008462 A KR1020017008462 A KR 1020017008462A KR 20017008462 A KR20017008462 A KR 20017008462A KR 20010089757 A KR20010089757 A KR 20010089757A
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KR
South Korea
Prior art keywords
laser diode
diode chip
high power
power laser
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020017008462A
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English (en)
Korean (ko)
Inventor
요한 루프트
브루노 악클린
예르크 헤어라인
카를-하인츠 슐러레트
베르너 슈패트
첼리코 슈피카
크리스티안 한케
룻츠 코르테
카를 에벨링
마르틴 베에링거
Original Assignee
추후보정
오스람 옵토 세미컨덕터스 게엠베하 운트 코. 오하게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 추후보정, 오스람 옵토 세미컨덕터스 게엠베하 운트 코. 오하게 filed Critical 추후보정
Publication of KR20010089757A publication Critical patent/KR20010089757A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020017008462A 1999-11-02 2000-11-02 레이저 다이오드 장치 및 상기 장치를 제조하기 위한 방법 Withdrawn KR20010089757A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19952712A DE19952712A1 (de) 1999-11-02 1999-11-02 Laserdiodenvorrichtung
DE19952712.1 1999-11-02
PCT/DE2000/003852 WO2001033607A2 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und verfahren zu deren herstellung

Publications (1)

Publication Number Publication Date
KR20010089757A true KR20010089757A (ko) 2001-10-08

Family

ID=7927658

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017008462A Withdrawn KR20010089757A (ko) 1999-11-02 2000-11-02 레이저 다이오드 장치 및 상기 장치를 제조하기 위한 방법

Country Status (9)

Country Link
EP (1) EP1177605B1 (https=)
JP (1) JP5064626B2 (https=)
KR (1) KR20010089757A (https=)
CN (1) CN1336027A (https=)
AT (1) ATE306133T1 (https=)
CA (1) CA2356323A1 (https=)
DE (2) DE19952712A1 (https=)
TW (1) TW478223B (https=)
WO (1) WO2001033607A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136716A2 (ko) 2008-05-06 2009-11-12 Yun Sung No 프레스 단조 방식의 발광다이오드 금속제 하우징 및 금속제 하우징을 이용한 발광다이오드 금속제 패키지

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031885A (ja) 2001-07-19 2003-01-31 Toshiba Corp 半導体レーザ装置
JP2005079580A (ja) 2003-08-29 2005-03-24 Osram Opto Semiconductors Gmbh 複数の発光領域を有するレーザー装置
DE102011116534B4 (de) * 2011-10-20 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement
CN103682030B (zh) * 2012-09-07 2017-05-31 深圳市龙岗区横岗光台电子厂 Led、led装置及led制作工艺
TWI566427B (zh) * 2013-07-05 2017-01-11 晶元光電股份有限公司 發光元件及其製造方法
KR101763675B1 (ko) 2013-07-05 2017-08-14 에피스타 코포레이션 발광소자 및 그 제조방법
CN104377542A (zh) * 2014-12-04 2015-02-25 中国科学院半导体研究所 一种半导体激光器引脚式封装结构及方法
DE102016106896A1 (de) 2016-04-14 2017-10-19 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauteil
DE102017205623B4 (de) * 2017-04-03 2025-03-13 Robert Bosch Gmbh LIDAR-Vorrichtung und Verfahrens zum Abtasten eines Abtastwinkels
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167083A (ja) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
JPH06334247A (ja) * 1993-05-20 1994-12-02 Hamamatsu Photonics Kk 半導体レーザの駆動制御回路及び駆動回路
DE19526389A1 (de) * 1995-07-19 1997-01-23 Siemens Ag Halbleiterlaserchip und Infrarot-Emitter-Bauelement
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
JPH0974243A (ja) * 1995-09-04 1997-03-18 Mitsubishi Electric Corp 半導体レーザ
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136716A2 (ko) 2008-05-06 2009-11-12 Yun Sung No 프레스 단조 방식의 발광다이오드 금속제 하우징 및 금속제 하우징을 이용한 발광다이오드 금속제 패키지

Also Published As

Publication number Publication date
DE50011296D1 (de) 2006-02-16
JP5064626B2 (ja) 2012-10-31
TW478223B (en) 2002-03-01
WO2001033607A2 (de) 2001-05-10
WO2001033607A3 (de) 2001-10-25
CN1336027A (zh) 2002-02-13
EP1177605B1 (de) 2005-10-05
EP1177605A2 (de) 2002-02-06
ATE306133T1 (de) 2005-10-15
DE19952712A1 (de) 2001-05-10
JP2003513463A (ja) 2003-04-08
CA2356323A1 (en) 2001-05-10

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