TW478223B - Laser-diode device - Google Patents

Laser-diode device Download PDF

Info

Publication number
TW478223B
TW478223B TW089122987A TW89122987A TW478223B TW 478223 B TW478223 B TW 478223B TW 089122987 A TW089122987 A TW 089122987A TW 89122987 A TW89122987 A TW 89122987A TW 478223 B TW478223 B TW 478223B
Authority
TW
Taiwan
Prior art keywords
laser diode
laser
patent application
diode element
led housing
Prior art date
Application number
TW089122987A
Other languages
English (en)
Chinese (zh)
Inventor
Johann Luft
Bruno Acklin
Martin Behringer
Karl Ebeling
Christian Hanke
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Application granted granted Critical
Publication of TW478223B publication Critical patent/TW478223B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW089122987A 1999-11-02 2000-11-01 Laser-diode device TW478223B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19952712A DE19952712A1 (de) 1999-11-02 1999-11-02 Laserdiodenvorrichtung

Publications (1)

Publication Number Publication Date
TW478223B true TW478223B (en) 2002-03-01

Family

ID=7927658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089122987A TW478223B (en) 1999-11-02 2000-11-01 Laser-diode device

Country Status (9)

Country Link
EP (1) EP1177605B1 (https=)
JP (1) JP5064626B2 (https=)
KR (1) KR20010089757A (https=)
CN (1) CN1336027A (https=)
AT (1) ATE306133T1 (https=)
CA (1) CA2356323A1 (https=)
DE (2) DE19952712A1 (https=)
TW (1) TW478223B (https=)
WO (1) WO2001033607A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031885A (ja) 2001-07-19 2003-01-31 Toshiba Corp 半導体レーザ装置
JP2005079580A (ja) 2003-08-29 2005-03-24 Osram Opto Semiconductors Gmbh 複数の発光領域を有するレーザー装置
KR100997198B1 (ko) 2008-05-06 2010-11-29 김민공 프레스 단조 방식의 발광다이오드 금속제 하우징 및 금속제하우징을 이용한 발광다이오드 금속제 패키지
DE102011116534B4 (de) * 2011-10-20 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement
CN103682030B (zh) * 2012-09-07 2017-05-31 深圳市龙岗区横岗光台电子厂 Led、led装置及led制作工艺
TWI566427B (zh) * 2013-07-05 2017-01-11 晶元光電股份有限公司 發光元件及其製造方法
KR101763675B1 (ko) 2013-07-05 2017-08-14 에피스타 코포레이션 발광소자 및 그 제조방법
CN104377542A (zh) * 2014-12-04 2015-02-25 中国科学院半导体研究所 一种半导体激光器引脚式封装结构及方法
DE102016106896A1 (de) 2016-04-14 2017-10-19 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauteil
DE102017205623B4 (de) * 2017-04-03 2025-03-13 Robert Bosch Gmbh LIDAR-Vorrichtung und Verfahrens zum Abtasten eines Abtastwinkels
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167083A (ja) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
JPH06334247A (ja) * 1993-05-20 1994-12-02 Hamamatsu Photonics Kk 半導体レーザの駆動制御回路及び駆動回路
DE19526389A1 (de) * 1995-07-19 1997-01-23 Siemens Ag Halbleiterlaserchip und Infrarot-Emitter-Bauelement
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
JPH0974243A (ja) * 1995-09-04 1997-03-18 Mitsubishi Electric Corp 半導体レーザ
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes

Also Published As

Publication number Publication date
DE50011296D1 (de) 2006-02-16
JP5064626B2 (ja) 2012-10-31
WO2001033607A2 (de) 2001-05-10
WO2001033607A3 (de) 2001-10-25
CN1336027A (zh) 2002-02-13
EP1177605B1 (de) 2005-10-05
EP1177605A2 (de) 2002-02-06
ATE306133T1 (de) 2005-10-15
KR20010089757A (ko) 2001-10-08
DE19952712A1 (de) 2001-05-10
JP2003513463A (ja) 2003-04-08
CA2356323A1 (en) 2001-05-10

Similar Documents

Publication Publication Date Title
KR102826272B1 (ko) 3d 및 lidar 감지 모듈
US8178372B2 (en) Method for production of a plurality of semiconductor chips, and a semiconductor component
CN110506332B (zh) 半导体辐射源
EP2410581B1 (en) Lift-off process for GaN films formed on SiC substrates
US8450751B2 (en) Optoelectronic semiconductor body and method for producing the same
US9787062B2 (en) Vertical cavity surface emitting laser array and method for manufacturing vertical cavity surface emitting laser array
JP5864126B2 (ja) 発光素子パッケージ
JP4897133B2 (ja) 半導体発光素子、その製造方法および配設基板
TW478223B (en) Laser-diode device
US6327285B1 (en) Surface mounted 2-D diode laser array package
JP5568476B2 (ja) オプトエレクトロニクス部品
KR20110136887A (ko) 광전 소자
US7459727B2 (en) Optoelectronic component and method of fabricating same
US7817695B2 (en) Lateral optically pumped surface-emitting semiconductor laser on a heat sink
JP2010192672A (ja) 面発光レーザ
TW527759B (en) Powerpack laser diode assemblies
KR101831410B1 (ko) 발광 소자 패키지 및 이를 구비한 발광 장치
JPS6214465A (ja) モノリシツク光電子集積回路
EP1208623A1 (en) Diode array package with homogeneous output
KR102329776B1 (ko) 금속 벌크를 포함하는 발광 소자
CN101809774B (zh) 发出辐射半导体构件、用于发出辐射半导体构件的容纳件以及用于制造发出辐射半导体构件的方法
US7692289B2 (en) Semiconductor devices with improved heat dissipation and method for fabricating same
JP2008243836A (ja) 光源装置および半導体発光素子
KR20170038968A (ko) 자외선 경화 장치
US20070147458A1 (en) Cavity and packaging designs for arrays of vertical cavity surface emitting lasers with or without extended cavities

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees