TW478223B - Laser-diode device - Google Patents

Laser-diode device Download PDF

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Publication number
TW478223B
TW478223B TW089122987A TW89122987A TW478223B TW 478223 B TW478223 B TW 478223B TW 089122987 A TW089122987 A TW 089122987A TW 89122987 A TW89122987 A TW 89122987A TW 478223 B TW478223 B TW 478223B
Authority
TW
Taiwan
Prior art keywords
laser diode
laser
patent application
diode element
led housing
Prior art date
Application number
TW089122987A
Other languages
English (en)
Inventor
Johann Luft
Bruno Acklin
Martin Behringer
Karl Ebeling
Christian Hanke
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Application granted granted Critical
Publication of TW478223B publication Critical patent/TW478223B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Description

478223 五 、發明說明（ 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 本發明涉及一種雷射二極體元件，其具有雷射二極體 晶片，此晶片安裝在一種發光二極體用之外殼中。 此種元件由文件 EG & G Op t 〇e 1 e c t r on i c s ·· Pu 1 s ed La serdi ode s-PGEW Series，Internet 中已爲人所知。雷 射二極體晶片之輸出功率可達1 5W且安裝在成本有利之塑 膠外殼中。此雷射二極體元件之脈波期間是30ns。雷射 二極體晶片之構造基本上是一種多重量子-井（well)結 構。 此種一般之雷射晶片具有單一之主動區（大部份具有量 子-井結構）且以L0C( large optical cavity)技術製成， 此種晶片用在1至1 5W之雷射功率範圍中且脈波期間是5 至100ns，或功率較小時脈波期間可達數個微秒（10-6sec) 。由於成本上原因，此種雷射晶片安裝在發光二極體用 之一般之LED外殼中。然後例如以樹脂來澆注此晶片。 所需之輸出功率在15W至50W之間時，上述文件中使多 個發光二極體晶片相鄰地安裝在相同之外殻中。在短脈 波範圍中由發光二極體所發出之此種高的光學輸出功率 在許多應用中是需要的。典型之應用是侵入時之警示， 碰撞防止系統，LIDAR，光學距離測量，自由空間傳送等 等。 前述之多重晶片-雷射二極體元件對許多應用而言是不 利的且很昂貴。一方面是在大量製造LEDs所用之LEDs生 產線上不易安裝。另一方面是由於需要大量之晶片面積 而使此種解法很昂貴。在輸出功率變成三倍時，例如需 --------------裝i I (請先閱讀背面之注意事項寫本頁) -·線- 478223 A7 B7 五、發明說明（2 ) 要三個雷射二極體元件。最後，在外殼中相鄰而配置之 晶片中，向外作用之光源分佈成多個較寬之互相分開之 射體，這樣會使成像特性劣化。 就高的雷射輸出功率而言，另外亦已爲人所知的是使 用二極體雷射條所構成之堆疊。二極體雷射之功率因此 可互相耦合，爲了在高的光學輸出功率中可控制這些與 其相關之熱功率，則雷射二極體條通常安裝在冷卻器上 且這些組件須相組合。這在技術上很昂貴，且由於各別 之光發射體之較大之間距以及較大之發射體面積而使雷 射光之可聚焦性劣化。由於有許多己安裝之雷射條，貝!] 在上下地組合多個光發射體時會有困難且另外會使光束 質下降。此種雷射二極體條之配置由DILAS Diodenlaser GmbH公司（位於Maing.Hechtsheim)中所揭示之文件中已 爲人所知。 本發明之目的是提供一種成本有利之適合大量製造之 雷射二極體元件，其具有較大之功率。 此目的藉由具有申請專利範圍第1項特徵之雷射二極體 元件及第6項之使用方法來達成。有利之其它形式敘述 在申請專利範圍各附屬項中。 本發明因此設計一種雷射二極體元件，其中在LED外 殻中安裝一種雷射二極體晶片，其是以多光束-半導體雷 射二極體構成，其在半導體基板具有許多上下配置之雷 射堆疊（其分別具有一個活性層），其中至少一對相鄰之 雷射堆疊之間具有一種穿隧式（tunnel)接面，半導體基 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---- ---1---------裝--- (請先閱讀背面之注意事項寫本頁) 訂_ 經濟部智慧財產局員工消費合作社印製 478223 A7 ___Β7 __ 五、發明說明（3 ) 板之外表面以及最上方之雷射堆疊之外表面分別具有一 種終端接觸區，其是與LED外殼之各接點相連接。 --------------裝·— (請先閱讀背面之注意事項寫本頁) 藉由使用單石式雷射二極體堆疊，則一方面在短脈波 範圍中可達成一種特別高之光學輸出功率（可達50W或更 大），另一方面是所使用之晶片面積即爲各別雷射二極體 之面積。因此只在外殻中安裝唯一之晶片。此種結構之 晶片成本較總輸出功率相同之多個晶片之成本小很多。 由於只安裝一個晶片，則此雷射二極體元件可成本很有 利地在LED組件用之標準生產線上安裝。此外，此種多光 速-雷射二極體之光發射體窄地相鄰著，則雷射光即可輕 易地達成聚焦作用。此外，在未聚焦之光束中亦可達成 一些品質上之優點。 線· 設計此種邊緣發射式或表面發射式之多光束-雷射二極 體。此種多光束-雷射二極體之構造可具有一種單一-或 多重量子-井結構或一種DFB結構。 在安裝此種多光束-雷射二極體之後，可以一種透明材 料（例如，樹脂或矽樹脂）來對此雷射二極體進行澆注。 經濟部智慧財產局員工消費合作社印製 依據LED外殼之形式，則此多光束-雷射二極體可設計 成在一個方向中或二個方向中發射。此多光束-雷射二極 體乏輸出光束可直接由外殻中耦合而出或經由鏡面耦合 而出。因此可形成雷射二極體元件，其在安裝於電路板 時可向上或向側面發射。此處LED外殼是特別有作用的， 其是作爲表面安裝用。 本發明以下將依據圖式來詳述。 本紙張尺度適用申國國家標準（CNS)A4規格（210 X 297公釐） 478223 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（4 ) 圖式簡單說明： 第1圖一種安裝在表面安裝用之LED外殼中之多光束-雷射二極體之切面圖。 第2圖徑向（rad i a 1)LED外殼用之多光束-雷射二極體 之透視圖。 第3圖 多光束-雷射二極體之層構造。 第1圖是表面安裝用之LED外殻（外殼是依據IEC-Pub 1. 286 part 3)之橫切面。外殼本體1由耐高溫之熱塑材料 所構成，利用此種熱塑材料來對一種不間斷沖製而成之 導電帶2a，2b進行濺鍍。此外殼內部具有一個開口，其側 面3形成一種反射面。具有多光束-雷射二極體構造之此 種半導體晶片4(其在本實施例中具有二個雷射堆疊L1和 L2，L1和L2之間配置一個未詳細顯示之穿隧式接面）是以 第一歐姆性接觸區5導電性地施加在此外殼之一個連接組 件2a上。電性接觸區5施加於多光束-雷射二極體之半導 體基板之下表面上。一種施加於最上方之雷射堆疊L1上 之第二歐姆性接觸區6是導電性地與終端-導電帶2b之其 它部份相連接。 可構成此種含有多光束-雷射二極體之半導體晶片4， 使雷射堆疊L1和L2之二個雷射光束經由活性層之邊緣或 經由二個邊緣耦合而出。藉助於反射面3而使各別之光 束轉向且向上由外殼耦合而出。爲了改良光束之射出耦 合性且保護此種已安裝之雷射二極體使不受外界所影響 ，則反射器開口須以環氧樹脂7澆注。樹脂7及外殼材料 -6- 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事 寫本頁) 裝 訂· -線· 478223 A7 B7 五、發明說明（5 ) 須小心地互相調整，使得在熱尖峰負載時仍不會產生干 擾。若不使用此種澆注樹脂7，則亦可使用其它透明之材 料，例如，矽樹脂或類似物。 第1圖之元件（其具有一種安裝在LED外殼中之多光束-雷射二極體）可在短脈波範圍（可達50W或更大）中操作。 由於上下堆疊之雷射二極體之晶片面積即爲唯一之單一 雷射二極體之面積且只有晶片4需要安裝，則在LEDs用之 標準生產線上使半導體晶片安裝在外殻中可以很省成本 之方式達成。 具有上下配置之雷射堆疊（例如，堆疊L1和L2 )之此種 單石式多光束-雷射二極體適合用於脈波操作中且含有至 少二個活性雷射區（其可藉助於接面而互相連接）。此種 接面例如是一種半導體-穿隧式（tunnel)接面。雷射堆疊 可具有單一-或多重量子-井結構或其它構造。這些層典 型上是以磊晶方式上下沈積而成。二個相鄰之光發射體 之間的垂直距離是2至3 // m。在操作時上下配置之各雷射 堆疊須串聯。在與此種輸出功率相同之單一雷射二極體（ 其是以不同之單一半導體晶片製成）比較時，多光束-雷 射二極體就雷射光束之可聚焦性及光束品質而言具有優 點。 第2圖是具有雷射堆疊L11或L21之多光束-雷射二極體 之部份透視圖，雷射堆疊是安裝在徑向（radial)LED用之 連接組件1 1上。此種連接是藉由基板下方之歐姆終端接 觸區15來達成。最上方之雷射堆疊L11上方之多光束-雷 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項HI寫本頁) i裝 線· 經濟部智慧財產局員工消費合作社印製 478223 A7 ____B7 五、發明說明（6 ) 射一極體之其它終端接觸區是與此元件之終端（1 6 )(其包 括第二外終端11 )相連接。圖中所示者包括雷射脈波p丨和 P2’其由雷射堆疊L11或L21中發出。第2圖之元件然後 典型上是以透明材料來澆注。 第3圖是一種多光束-雷射二極體構造的一種例子，如 US 5 212 706中所述者。其含有上下配置之雷射堆疊li 和L2 ’在L1和L2之間有一種由層ητ和PT所形成之穿隧 式接面Τ。下方之雷射堆疊L2含有此二層η2和Ρ2是由活 性層；Τ 2所隔開。此種層結構位於基板ρ上方，基板ρ在其 下側具有一種歐姆性終端接觸區25。上方之雷射堆疊L1 含有二極體層P1和η 1，其藉由活性層π所隔開。典型上 各穿隧式ηΤ和ΡΤ是高摻雜之η層或ρ層。上方之雷射堆 疊L1之上方存在一種半導體層η，其表面上存在第二歐姆 性終端接觸區26。 多光束-雷射二極體之構造和功能已詳細描述在先前所 提及之US專利文件中，其是一種GaAs系統。已爲人所知 悉者是：多光束-雷射二極體可製作在其它材料系統中， 例如，製作在InGaAs系統中。此種構造由二個各別之雙 量子-井結構（DQW )來形成是可能的，這些DQW結構埋置於 A 1 GaAs所構成之LOC-波導結構中且經由一種形成於砷化 鎵中之穿隧式接面而互相連接。此種配置之波長是905 nm ° 作爲脈波式雷射用之多光束-雷射二極體可操作在由 III-/V-化合物半導體所覆蓋之整個波長範圍（由UV至大 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------裝--- (請先閱讀背面之注意事項寫本頁) 訂_ i線· 經濟部智慧財產局員工消費合作社印製 478223 A7 一 B7 五、發明說明（7 ) 於1 . 5 // m)中。特別是波長範圍介於850nm和905nm之間 在技術上是令人較感興趣的。特別是可作爲光學活性材料 用之泵或直接用在光波導元件之脈波式操作中。在高的 光學輸出功率時，就此種在脈波式操作中之多光束-雷射 二極體而言熱負載是很小的，使單石中堆疊配置而成之 雷射二極體不會快速地退化。因此，在單一之LED外殻中 有較佳之光束品質時可利用此種高的雷射輸出功率之優 點，而不必忍受習知之堆疊條之缺點或產生高熱所造成 之缺點。 多光束-雷射二極體之輸出功率依據重疊配置之雷射堆 疊之數目大約是30W(在重疊二個堆疊時）或50W(在重疊三 個雷射堆疊時）。一種在前述材料系統InGaAs中此波長 905nm處理用之20-條形陣列-晶片所具有之尺寸是600x 600 // m2且安裝及澆注在一般之LED外殼（其具有反射器盆 形區）中（請比較第1圖）。輸出功率大約是30W且電流-光 束特性曲線之微分斜率（d i f f e r e n t i a 1 s 1 〇 p e )値是大於 2. OW/A。若在同一系統中上下地生長三個雙量子-井-雷 射結構，則可形成一種輸出功率大約是50W之多光束-雷 射二極體且特性曲線之斜率是大於3W/ A。亦可形成一些 多光束-雷射二極體，其輸出功率較高而可達成100W。 符號之說明 1 ....外殼本體 2a,2b____導電帶 3 ....側面 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝--- rtt先閱讀背面之注意事項寫本頁) 訂_ -線· 經濟部智慧財產局員工消費合作社印製 478223 A7 B7五、發明說明（8 ) 4 ....半導體晶片 5，6 ....接觸區 7.....樹脂 11____連接組件 1 5 ....終端接觸區 1 6 ....終端 25, 26 ____終端接觸區 P.....基板 T.....穿隧式接面 LI，L2，L11，L21 ....雷射堆疊 J1 , J2——活性層 η，n2，P2，nT，PT ·…層 (請先閱讀背面之注意事項寫本頁) 裝 · --線· 經濟部智慧財產局員工消費合作社印製 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. 478223
    六、申請專利範圍 第89 1 229 87號「雷射二極體元件」專利案 ：（90年11月修正） 六、申請專利範圍 1. 一種雷射二極體元件，其具有雷射二極體晶片，此晶片 安裝在一種發光二極體（LED)用之外殼中，其特徵爲：此 雷射二極體晶片是一種單石式多光束-雷射二極體 (4，L1，L2)。 2. 如申請專利範圍第1項之雷射二極體元件，其中 此雷射二極體晶片（4)具有一種多光束-雷射二極體 (L1，L2)之構造，其在半導體基板（P)上具有許多上下配置 之雷射堆疊（LI，L2)，這些堆疊分別具有活性層（Π，J2)， 至少一對相鄰之雷射堆疊（LI，L2)具有一種配置於其間 之穿隧式接面（T)，此半導體基板（P)之外表面及最上方之 雷射堆疊（η)之外表面分別具有一種終端接觸區（25，26)， 其是與LED外殻（1)之終端（2a，2b)相連接。 3. 如申請專利範圍第1或第2項之雷射二極體元件，其中 此LED 外殻（1)具有一種反射器盆形區（3)，其側面具有 反射性且其底部上配置該多光束-雷射二極體（4)。 4·如申請專利範圍第1或第2項之雷射二極體元件，其中 此安裝在LED外殼（1)中之多光束-雷射二極體（4)是以透 明材料（7)來澆注。 5·如申請專利範圍第3項之雷射二極體元件，其中此安裝 在LED外殻（1)中之多光束-雷射二極體（4)是以透明材料（7) 來澆注。 6·如申請專利範圍第4項之雷射二極體元件，其中此透明 材料（7)含有樹脂或矽樹脂材料中至少一種。
    7如申請專利範圍第5項之雷射二極體元件，其中此透明 材料（7)含有樹脂或矽樹脂材料中至少一種。 8·如申請專利範圍第1或第2項之雷射二極體元件，其中 此多光束-雷射二極體（4)須參考此LED外殼而配置，使 此多光束-雷射二極體（4)之輸出功率（PI，P 2)可由外殼發 出而不會偏向。
    9.如申請專利範圍第4項之雷射二極體元件，其中此多光 束-雷射二極體（4)須參考此LED外殻而配置，使此多光 束-雷射二極體（4)之輸出功率（PI，p2)可由外殼發出而不 會偏向。
    -2-
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JP2003031885A (ja) 2001-07-19 2003-01-31 Toshiba Corp 半導体レーザ装置
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WO2001033607A3 (de) 2001-10-25
DE19952712A1 (de) 2001-05-10
CA2356323A1 (en) 2001-05-10
DE50011296D1 (de) 2006-02-16
CN1336027A (zh) 2002-02-13
JP2003513463A (ja) 2003-04-08
EP1177605A2 (de) 2002-02-06
KR20010089757A (ko) 2001-10-08
ATE306133T1 (de) 2005-10-15
JP5064626B2 (ja) 2012-10-31
WO2001033607A2 (de) 2001-05-10

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