CA2356323A1 - Laser diode device and method for the manufacture thereof - Google Patents

Laser diode device and method for the manufacture thereof Download PDF

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Publication number
CA2356323A1
CA2356323A1 CA002356323A CA2356323A CA2356323A1 CA 2356323 A1 CA2356323 A1 CA 2356323A1 CA 002356323 A CA002356323 A CA 002356323A CA 2356323 A CA2356323 A CA 2356323A CA 2356323 A1 CA2356323 A1 CA 2356323A1
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Canada
Prior art keywords
laser diode
diode chip
performance
laser
chip
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Abandoned
Application number
CA002356323A
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French (fr)
Inventor
Johann Luft
Bruno Acklin
Jorg Heerlein
Karl-Heinz Schlereth
Werner Spath
Zeljko Spika
Christian Hanke
Lutz Korte
Karl Ebeling
Martin Behringer
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Ams Osram International GmbH
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Individual
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Publication of CA2356323A1 publication Critical patent/CA2356323A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.

Description

LASER DIODE DEVICE AND METHOD FOR THE MANUFACTURE
THEREOF
The invention is directed to a laser diode device according to the preamble of patent claim 1. It is also directed to a method for the manufacture of such a laser diode device.
Such a device is known from the publication EG&G Optoelectronics:
Pulsed Laser Diodes -- PGEW Series, Internet Publication. A laser diode chip achieves an output power of 15 watts and is built into a plastic housing. The pulse duration of the laser diode element amounts to 30 ns. The structure of the laser diode chip fundamentally corresponds to a multiple quantum well structure.
Such standard laser chips with a simple active zone, usually with quantum well structure and in LOC (large optical cavity) technology as well, are utilized for the laser power range from 1 through 15 W and pulse durations of 5 through 100 ns or given pulse durations up to a few microseconds with lower powers. For cost reasons, the laser chip is built into a standard LED housing for a light-emitting diode.
Subsequently, the chip is cast out, for example, with resin.
For required output powers above 15 W through about 50 W, said publications provides for the mounting of a plurality of laser diode chips next to one another in the same housing. Such high output powers from laser diode in the short 2 0 pulse range are required for a number of applications. Typical applications are burglar alarm systems and collision avoidance systems, LIDAR, optical range measurement, free space transmission, etc.
The above-described mufti-chip laser diode device is unfavorable for many applications and, over and above this, is involved and, consequently, expensive. First, 2 5 such a mounting of a plurality of chips in one LED housing is not standard in the LED
production lines provided for the mass-production of LEDs and is difficult to implement on these lines; second, the solution is expensive because of the large chip area that is required. For example, three laser diode elements are required when the output power is tripled. Finally, the externally effective radiation source given the chips arranged next to one another in the housing is distributed onto a plurality of emitters lying relatively far apart, which leads to deteriorated imaging properties.
On the other hand, it is known to employ stacks of laser diode bars for high laser output powers. The powers of the diode lasers are interconnected as a result thereof. In order to be able to control the thermal powers connected therewith given the higher optical output powers, the laser diode bars are often mounted on coolers and the components are utilized in combination. This is very involved in technical terms, and the focusability of the laser light deteriorates due to the great spacing of the individual radiation emitters as well as due to the larger emitter area.
Due to the size of the mounted bars, difficulties derive in the combination of a plurality of radiation emitters above one another, as does, over and above this, a reduction of the beam quality. Such an arrangement of laser diode bars is known from a publication of DILAS Diodenlaser GmbH, Mainz-Hechtsheim.
The invention is based on the object of specifying a cost-beneficial laser diode device with high power that is suited for manufacture on a large scale and to specify a method for the manufacture thereof.
This object is achieved by a laser diode device having the features of patent claim l, by an employment according to claim 7 and by a method having the 2 0 features of patent claim 8 or 9. Advantageous developments are the subj ect matter of the subclaims 2 through 6.
The present invention provides a laser diode device wherein a laser diode chip is built into an LED housing, said laser diode chip being constructed as a multiple beam semiconductor laser diode that comprises a plurality of laser stacks that 2 5 are arranged above one another on a semiconductor substrate and respectively comprise at least one active layer, whereby at least one pair of neighboring laser stacks has a tunnel junction arranged between them, and whereby the outer surfaces of the semiconductor substrate and of the uppermost laser stack respectively have a terminal contact that are connected to the terminals of the LED housing.
By employing monolithic laser diode stacks, on the one hand, extremely high optical output powers up to 200 W or even more are possible in the short-pulse range; on the other hand, the chip area employed corresponds to that of a single-laser diode. Only a single chip need therefore be mounted in the housing. The chip costs of such a structure are considerably lower than the costs for a plurality of chips having the same total output power. As a result of the mounting of only a single chip, the laser diode device can ensue [sic] very beneficially on a standard production line for LED components. Over and above this, the light emitters of such a multiple beam laser diode lie close to one another, so that a focussing of the laser light is easy to 1 o accomplish. Advantages in the unfocussed beam quality also derive.
It is provided that the multiple beam laser diode is of the type of an edge emitter or of a surface emitter. The construction of such a multiple beam laser diode can have a single or multiple quantum well structure of a DFB structure.
The laser diode can be cast out with a transparent material, for example resin or silicone, after the multiple beam laser diode has been built in.
Dependent on the type of LED housing, it is provided that the multiple beam laser diode emits in one direction or in two directions. The output beam or beams of the multiple laser diode can be couple out of the housing either directly or via mirrors. As a result thereof, laser diode devices derive that can emit toward the 2 0 top or toward the side given the mounting of the device on a motherboard.
LED
housings that are provided for surface mounting are especially advantageously suited here.
The invention is explained in greater detail below on the basis of the Figures of the drawing. Shown are:
2 5 Figure 1 a schematic sectional view of a multiple beam high-performance laser diode installed in an LED housing for surface mounting;
Figure 2 a schematic, perspective view of a multiple beam high-performance laser diode for a radial LED housing;
Figure 3 a schematic, perspective view of a multiple beam high-performance laser diode in a radial housing;
Figure 4 the schematic layer structure of a multiple beam high-performance laser diode.
Figure 1 shows a crossection through an LED housing for surface mounting (housing according to IEC Publ. 286 Part 3). The housing body 1 is composed of high-temperature resistant thermoplastic with which an endlessly punched conductor ribbon 2a and 2b is extrusion coated. At its inside, the housing has an opening whose sides 3 are fashioned as reflector surface. The semiconductor chip 4 with the structure of a multiple beam laser diode having two laser stacks L1 and L2 in the exemplary embodiment between which a tunnel junction (not referenced in detail) is arranged has a first ohmic contact 5 applied on a terminal part 2a of the housing in electrically conductive fashion. The electrical contact 5 is applied on the bottom surface of the semiconductor substrate of the multiple beam laser diode. A
second ohmic contact 6 applied on the uppermost laser stack L1 is electrically conductively connected to the other part of the terminal conductor ribbon 2b.
The semiconductor chip 4 containing the multiple beam laser diode can be fashioned such that the two laser beams of the laser stacks Ll and L2 are coupled out via an edge of the active layers or via both edges. The individual beams are deflected 2 0 with the assistance of the reflector surface 3 and are upwardly coupled out of the housing. The reflector opening is cast out with epoxy resin 7 for improving the light outfeed and for protecting the laser diode from environmental influences. The resin 7 and the housing material are carefully matched to one another so that no mechanical disturbances can occur even given peak thermal loads. Some other transparent 2 5 material, for example acrylic resin, silicone or the like, can also be utilized instead of the casting resin 7.
A device according to Figure 1 with a multiple beam laser diode mounted in an LED housing can be operated in the short-pulse range at up to 200 W and above.
Since the chip area of the laser diodes stacked on top of one another corresponds to that of one single-laser diode and only one chip 4 need be mounted, the mounting of the semiconductor chip in the housing can ensue very cost-beneficially on a standard production line for LEDs.
The monolithic multiple beam laser diodes with laser stacks arranged on 5 top of one another, for example the stacks L1 and L2, are suitable for pulsed operation and contain at least two active laser zones that are connected to one another with the assistance of a junction. For example, the junction is a semiconductor tunnel junction.
The laser stacks can have a single or multiple quantum well structure format or some other format. Typically, the layers are epitaxially deposited on top of one another.
Standard vertical spacings between two neighboring light emitters amount to 2-3 Vim.
During operation, the individual laser stacks arranged on top of one another are connected in series. Compared to single-laser diodes having the same output power, which is realized with different single-semiconductor [sic] chips, advantages in view of the focusability of the laser beams and in view of the beam quality also derive given the multiple beam laser diode.
Figure 2 shows a partially perspective view of a multiple beam laser diode with the laser stacks L11 or, respectively, L21 that are mounted on a terminal part 10 for a radial LED. The connection ensues via the ohmic terminal contact 15 under the substrate. The other terminal contact of the multiple beam laser diode above the 2 0 uppermost laser stack L11 has the terminal 16 connected to a second outside terminal 11 of the device. The laser pulses P 1 and P2 that our emitted by the laser stacks L 11 or, respectively, L21 are schematically indicated. Subsequently, the device of Figure 2 is typically cast out with a transparent material.
Figure 3 shows an especially preferred exemplary embodiment wherein an 2 5 edge-emitting multiple beam high-performance laser diode chip 4 is mounted on the lateral surface of the terminal part 10 of a radial housing 9 known from light-emitting diode component technology, and the emission direction 8 proceeds parallel to the terminal legs of the radial housing 9. In this case, the edge-emitting high-performance laser diode chip 4 is first mounted on a lateral surface of the terminal part and is subsequently directly cast out with the radiation-transparent reaction resin 7.
By way of example, Figure 4 shows the structure of a multiple beam laser diode as disclosed by US 5,212,706. The multiple beam laser diode contains the laser stacks L1 and L2 arranged above one another, between which a tunnel junction T
formed of the layers nT and pT lies. The lower laser stack L2 contains the layers n2 and p2 that are separated by an active layer J2. The layer structure is located above the substrate n, which comprises an ohmic terminal contact 25 on its underside. The upper laser stack L1 comprises the diode layers pl and nl that are separated by an active layer Jl. Typically, the tunnel layers nT and pT are highly doped n-layers or, respectively, p-layers. A semiconductor layer p, on whose surface a second ohmic terminal contact 26 is located, is present above the upper laser stack L1.
Structure and function of the multiple beam laser diode are discussed in detail in the aforementioned US Letters Patent. This is thereby a matter of a GaAs system. It is self evident that multiple beam laser diodes, too, can be realized in other material systems, for example in the InGaAs system. For example, such a structure is possible on the basis of two individual double quantum well structures (DQW) that are embedded in an LOC waveguide structure of AIGaAs and are connected to one another via a tunnel junction placed in the gallium arsenide. The central emission 2 0 wavelength of such an arrangement is dependent on the dimensioning of the DQW
structure and preferably lies, for example, at 905 nm.
Multiple beam laser diodes as pulsed laser are possible in the entire wavelength range from UV to above 1.5 pm covered by the III/V compound semiconductors. In particular, the wavelength ranges around 850 nm and around 2 5 nm are of great technological interest. This particularly includes direct applications in the pulsed mode. The thermal load for the multiple beam laser diodes is low in the pulsed mode even given high optical output powers, so that the monolithically stacked laser diodes are not subject to any rapid degradation. This makes it possible to use the advantages of the high laser output powers with comparably good beam quality in a simple LED housing as well, without having to accept the disadvantages of known stack bars or of a high heat generation.
Dependent on the plurality of laser stacks lying above one another, the output powers of the multiple beam laser diodes amount to approximately 70 W
given two laser stacks lying above one another and 100 W given three laser stacks lying above one another. A 20-strip array chip processed in the above-described material system of InGaAs for the wavelength 905 nm has the dimensions 600 x 600 pmz and is mounted in a standard LED housing with reflector well and cast out (see Figure 1).
The output power amounts to approximately 70 W, and the differential slope of the current/radiation characteristic is > 2.0 W/A. When three double quantum well laser structures are grown on top of one another in the same system, a multiple beam laser diode derives with an output power of about 100 W and a slop of the characteristic of > 3 W/A. It is possible to manufacture multiple beam laser diodes that have even higher output powers up to far more than 100 W.

Claims (9)

Patent Claims
1. Laser diode device having a high-performance laser diode chip, whereby -- the high-performance laser diode chip (4) has a structure as multiple beam laser diode (L1, L2) that comprises at least two laser stacks (L1, L2) that are arranged above on a semiconductor substrate (n) and respectively have at least one active layer (J1, J2) between which a tunnel junction (T) is arranged, and comprises electrical terminal contacts (25, 26);
-- the high-performance laser diode chip (4) is mounted on a terminal part (2a, 10) of a conductor ribbon;
-- the electrical terminal contacts (25, 26) are electrically conductively connected to terminal parts (2a, 2b, 10, 11 ) of the conductor ribbon; and -- the high-performance laser diode chip (4) and, at least in part, the terminal parts (2a, 2b, 10, 11 ) are cast out with a radiation-transparent reaction resin.
2. Laser diode device according to claim 1, whereby the high-performance laser diode chip comprises a pulse width of between 1 ns and 100 ns, especially preferably of between 1 ns and 25 ns.
3. Laser diode device according to claim 1 or 2, whereby the spacing between the two neighboring radiation emitters amounts to between 2 µm and 3 µm, inclusive.
4. Laser diode device according to one of the claims 1 through 3, whereby the terminal parts (2a, 2b) are provided with a surface-mountable housing member (1) that comprises a recess in which at least respectively a sub-region of the terminal parts (2a, 2b) lie free, in which the high-performance laser diode chip (4) is mounted on the terminal part (2a), and in which the laser diode chip (4) is cast out with the radiation-transparent reaction resin.
5. Laser diode device according to claim 4, whereby the emission direction of the high-performance laser diode chip (4) proceeds parallel to a bottom surface of the recess on which the laser diode chip is mounted, and the sidewalk of the recess, together with the bottom surface, form a reflector well (3), and the lateral surfaces are mirrored.
6. Laser diode device according to one of the claims 1 through 4, whereby the laser diode chip (4) is arranged such with reference to the housing that the output beams (P1, P2) of the multiple beam laser diode (4) are beamed out from the housing without deflection.
7. Employment of reaction casting resin, particularly epoxy resin, acrylic resin or silicone resin or a mix of these materials, for casting out a high-performance laser diode chip that comprises the structure of a multiple beam laser diode (L1, L2) that contains at least two laser stacks (L1, L2) that are arranged above on a semiconductor substrate (n) and respectively have at least one active layer (J1, J2) between which a tunnel junction (T) is arranged, and that is mounted on a terminal part (2a, 10) of a conductor ribbon.
8. Method for manufacturing a laser diode device according to one of the patent claims 4 through 6, whereby the terminal parts (2a, 2b) of the conductor ribbon are provided with a housing member (1) that comprises a recess within which the high-performance laser diode chip (4) is mounted on the appertaining terminal part (2a), and whereby the high-performance diode chip (4) is subsequently cast out with the transparent reaction resin.
9. Method for manufacturing a laser diode device according to one of the patent claims 1 through 3, whereby the high-performance laser diode chip (4) is provided with a radial housing known from light-emitting diode component technology, whereby the edge-emitting high-performance laser diode chip (4) is first mounted on a lateral surface of the terminal part and is subsequently directly cast out with the radiation-transparent reaction resin.
CA002356323A 1999-11-02 2000-11-02 Laser diode device and method for the manufacture thereof Abandoned CA2356323A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19952712A DE19952712A1 (en) 1999-11-02 1999-11-02 Laser diode device
DE19952712.1 1999-11-02
PCT/DE2000/003852 WO2001033607A2 (en) 1999-11-02 2000-11-02 Laser diode device and method for producing the same

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Publication Number Publication Date
CA2356323A1 true CA2356323A1 (en) 2001-05-10

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US11189990B2 (en) 2017-06-02 2021-11-30 Osram Oled Gmbh Semiconductor laser component and method of producing a semiconductor laser component

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US7271419B2 (en) 2003-08-29 2007-09-18 Osram Opto Semiconductor Gmbh Laser device having a plurality of emission zones
US11189990B2 (en) 2017-06-02 2021-11-30 Osram Oled Gmbh Semiconductor laser component and method of producing a semiconductor laser component

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EP1177605B1 (en) 2005-10-05
ATE306133T1 (en) 2005-10-15
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TW478223B (en) 2002-03-01
JP5064626B2 (en) 2012-10-31

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