JPS6214465A - Monolithic photo-electronic integrated circuit - Google Patents
Monolithic photo-electronic integrated circuitInfo
- Publication number
- JPS6214465A JPS6214465A JP60152483A JP15248385A JPS6214465A JP S6214465 A JPS6214465 A JP S6214465A JP 60152483 A JP60152483 A JP 60152483A JP 15248385 A JP15248385 A JP 15248385A JP S6214465 A JPS6214465 A JP S6214465A
- Authority
- JP
- Japan
- Prior art keywords
- light
- integrated circuit
- receiving element
- electronic integrated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Semiconductor Lasers (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） この発明はモノリシック光電子集積回路に関する。[Detailed description of the invention] (Industrial application field) This invention relates to monolithic optoelectronic integrated circuits.
（従来の技術）
半導体レーザは小型で信頼性が高いことから、光通信用
光源、光デイスク書込み読出し用光源、その他の光学情
報処理用の光源として使用されている。現在までに１種
々の用途や仕様に従ってざまざまの構造の半導体レーザ
が開発され使用に供されている（例えば、末松安晴編者
「半導体レーザと光集積回路」 （昭５９−４−２５）
オーム社ｐ ２７１〜２７４ ））。(Prior Art) Semiconductor lasers are small and highly reliable, so they are used as light sources for optical communication, light sources for reading and writing optical disks, and other light sources for optical information processing. To date, semiconductor lasers of various structures have been developed and put into use according to various uses and specifications (for example, "Semiconductor Lasers and Optical Integrated Circuits" edited by Yasuharu Suematsu (April 25, 1982))
Ohmsha p 271-274)).
しかしながら、半導体レーザは本質的に温度変化によっ
て出力が大きく変動するので、安定した光出力を得るた
めには、通常は光出力を一定にするＡＰＣ回路（Ａｕｔ
ｏｍａｔｉｃ Ｐｏｗｅｒ Ｃｏｎｔｒｏ１回路）を必
要としている。However, since the output of semiconductor lasers inherently fluctuates greatly due to temperature changes, in order to obtain stable optical output, an APC circuit (APC circuit) that keeps the optical output constant is usually used.
matic Power Control 1 circuit).
第２図は、従来のＡＰＣ方式で光出力の一定化を図るた
めの構成を説明するためのブロック線図である０図中ｌ
Ｏは半導体レーザで、通常は二つの臂開面を共振器の鏡
面とした端面発光型構造となっていて、１２及び１４で
示すような二方向に光を放出する。この場合、光出力１
４をモニタ用として利用するため、この光出力１４を受
光するための受光素子１６を設け、この受光素子１！１
からの出方をＡＰＣ回路１８によって半導体レーザ１０
にフィードバックさせて半導体レーザに流す駆動電流の
制御を行っている。Figure 2 is a block diagram for explaining the configuration for stabilizing the optical output using the conventional APC method.
O is a semiconductor laser, which usually has an edge-emitting structure in which the two arm openings serve as mirror surfaces of the resonator, and emits light in two directions as shown at 12 and 14. In this case, the optical output 1
4 for monitoring, a light receiving element 16 for receiving this optical output 14 is provided, and this light receiving element 1!1
The output from the semiconductor laser 10 is controlled by the APC circuit 18.
The drive current flowing through the semiconductor laser is controlled by feedback.
（発明が解決しようとする問題点）
しかしながら、上述したような従来のＡＰＣ方式では、
それぞれ別債に形成した半導体レーザのような発光素子
、受光素子及びＡ１０回路を組合せて制御系を構成して
いるため、このＡＰＣ制御系の構成が大型となるという
欠点があった。(Problems to be solved by the invention) However, in the conventional APC method as described above,
Since the control system is constructed by combining a light-emitting element such as a semiconductor laser, a light-receiving element, and an A10 circuit, each of which is formed separately, the APC control system has the drawback of being large in size.
この問題は、発光素子の光出力をＡ１０回路を用いて制
御する場合だけではなく、Ａ１０回路の代わりに光出力
を光電変換して他に利用するための電子回路を用いる場
合にも言えることである。This problem applies not only when controlling the light output of a light emitting element using an A10 circuit, but also when using an electronic circuit to photoelectrically convert the light output and use it for other purposes instead of the A10 circuit. be.
従って、この発明の目的は、上述した従来の問題点に鑑
み、発光素子、受光素子及び電子回路をモノリシックに
集積化したモノリシック光電子集積回路を提供すること
にある。Therefore, an object of the present invention is to provide a monolithic optoelectronic integrated circuit in which a light emitting element, a light receiving element and an electronic circuit are monolithically integrated in view of the above-mentioned conventional problems.
（問題点を解決するための手段）
この目的の達成を図るため、この発明では次のような手
段を採る。(Means for solving the problem) In order to achieve this object, the present invention takes the following means.
シリコン（Ｓｉ）基板に形成された受光素子と、電子集
積回路とを具えている。この受光素子は電子集積回路と
例えば配線導体を介して゛屯気的に接続されている。こ
の電子集積回路は上述したＡ１０回路であっても良いし
、或いは目的に適った任意の回路構成として形成出来る
。It includes a light receiving element formed on a silicon (Si) substrate and an electronic integrated circuit. This light receiving element is electrically connected to the electronic integrated circuit via, for example, a wiring conductor. This electronic integrated circuit may be the A10 circuit described above, or may be formed as any circuit configuration suitable for the purpose.
さらに、Ｓｉ基板に発光素子を具えていて、この発光素
子を、受光素子がこの発光素子からの発光出力を受光出
来る位置に形成した構造となっている。Further, the Si substrate is provided with a light emitting element, and the light emitting element is formed at a position where the light receiving element can receive the light emission output from the light emitting element.
この場合、Ｓｉ基板内に発光素子、受光素子及び電子集
積回路を作製し、プレーナ型としても良い、或いは、発
光素子を基板面から突出させ、受光素子及び電子集積回
路を基板内に設けた構造としても良い。In this case, a light emitting element, a light receiving element, and an electronic integrated circuit may be fabricated within the Si substrate, and a planar type structure may be used, or a structure in which the light emitting element protrudes from the substrate surface and the light receiving element and electronic integrated circuit are provided within the substrate. It's good as well.
また、この発明でいう基板には本来のＳｉ基板自体でも
良いし、或いは、何等かの材料からなる下地上にＳｉ層
を形成したものも含むものとする。Further, the substrate referred to in this invention may be the original Si substrate itself, or may include a substrate made of some material with a Si layer formed on the base.
また、この発明の実施に当っては１発光素子を面発光型
素子とするのが好適である。Further, in carrying out the present invention, it is preferable that one light emitting element be a surface emitting type element.
（作用）
このように、この発明のモノリシック光電子集積回路で
は発光素子、受光素子及び所要の電子集積回路を一チツ
プで形成した構造となっているので、回路構造が小型化
出来る。(Function) As described above, the monolithic optoelectronic integrated circuit of the present invention has a structure in which a light emitting element, a light receiving element, and a necessary electronic integrated circuit are formed on one chip, so that the circuit structure can be miniaturized.
さらに、この発明の光電子集積回路によれば、安価なシ
リコン基板を利用して各素子及び電子集積回路を作り込
んだ構造となっていると共に、従来のような、個別に形
成した発光素子、受光素子及び電子回路の組み合わせ作
業を必要としないので製造工数が低減出来る。従って、
製造コストを従来よりも低減することが出来る。Further, according to the optoelectronic integrated circuit of the present invention, each element and the electronic integrated circuit are fabricated using an inexpensive silicon substrate, and the optoelectronic integrated circuit has a structure in which each element and electronic integrated circuit are fabricated using an inexpensive silicon substrate, and the optoelectronic integrated circuit has a structure in which each element and electronic integrated circuit are fabricated using an inexpensive silicon substrate. Since there is no need to combine elements and electronic circuits, the number of manufacturing steps can be reduced. Therefore,
Manufacturing costs can be reduced compared to conventional methods.
（実施例）
以下、図面を参照して、この発明のモノリシック光電子
集積回路の実施例につき説明する。尚、以下の実施例で
は、−例として、Ｓｉ基板内に光集積回路及び受光素子
を作り込み１発光素子としての半導体レーザを受光素子
の上側に作り込んだ構造例につき説明する。(Embodiments) Hereinafter, embodiments of the monolithic optoelectronic integrated circuit of the present invention will be described with reference to the drawings. In the following embodiments, an example of a structure will be described in which an optical integrated circuit and a light receiving element are built in a Si substrate, and a semiconductor laser as one light emitting element is built above the light receiving element.
第１図（Ａ）はこの発明のモノリシック光電子集積回路
の構造を説明するための断面図及び第１図（Ｂ）はその
要部拡大断面図である。これら図は。FIG. 1(A) is a cross-sectional view for explaining the structure of a monolithic optoelectronic integrated circuit according to the present invention, and FIG. 1(B) is an enlarged cross-sectional view of a main part thereof. These diagrams.
この発明を理解出来る程度に各構成成分の寸法、形状及
び配置関係を概略的に示しであるにすぎず、従って、こ
の発明は以下に説明する実施例にのみ限定されるもので
はない。The dimensions, shapes, and arrangement relationships of each component are merely shown schematically to enable understanding of the present invention, and therefore, the present invention is not limited to the embodiments described below.
第１図（Ａ）に示す光電子集積回路は、ｐ−３ｉ基板２
０と、このＳｉ基板２０内の表面領域に互いに離間させ
て電子集積回路２２及び受光素子２４とを具え、さらに
、この受光素子２４の上側に発光素子としての面発光型
半導体レーザ２６を具えた構造となっている。The optoelectronic integrated circuit shown in FIG. 1(A) consists of a p-3i substrate 2
0, an electronic integrated circuit 22 and a light-receiving element 24 are provided on the surface area of the Si substrate 20 at a distance from each other, and a surface-emitting semiconductor laser 26 as a light-emitting element is further provided above the light-receiving element 24. It has a structure.
この構造において、この電子集積回路２２を例えば半導
体レーザ２Ｂの発光出力を一定にするためのＡ１０回路
とする。また、受光素子２４を、例えば、ｐ−Ｓｔ基板
２０とｎ−Ｓ ｉ９Ｒ域２８とのｐｎｔｌｉ合構造で形
成する。また、このｎ−５ｔ領域２８上に真性Ｓｔ領領
域０を設け、その上側に半導体レーザ２Ｂを設けている
。In this structure, the electronic integrated circuit 22 is, for example, an A10 circuit for making the light emission output of the semiconductor laser 2B constant. Further, the light receiving element 24 is formed, for example, with a pntli combination structure of the p-St substrate 20 and the n-Si9R region 28. Further, an intrinsic St region 0 is provided on this n-5t region 28, and a semiconductor laser 2B is provided above it.
さらに、基板表面の電極配線部分及び半導体レーザ形成
部分を除いた残りの部分と、基板２０の裏面上に絶縁膜
３２を設ける。Further, an insulating film 32 is provided on the remaining portion of the front surface of the substrate excluding the electrode wiring portion and the semiconductor laser forming portion, and on the back surface of the substrate 20.
そして、半導体レーザ２６のｐ ＩＩ電極３４を設ける
と共に、半導体レーザ２６及び受光素子のｎ側電極３６
を設ける。Then, a p II electrode 34 of the semiconductor laser 26 is provided, and an n-side electrode 36 of the semiconductor laser 26 and the light receiving element is provided.
will be established.
さらに、受光素子基板２０の表面と電子集積回路２２の
表面とに電気的に接触させて設けた接続導体３８は受光
素子２４のｐ側電極を構成している。Further, a connecting conductor 38 provided in electrical contact with the surface of the light-receiving element substrate 20 and the surface of the electronic integrated circuit 22 constitutes a p-side electrode of the light-receiving element 24.
次に、このような構造の半導体レーザ及び受光素子の部
分の要部を第１図（Ｂ）に拡大して示す。Next, the main parts of the semiconductor laser and light receiving element having such a structure are shown in an enlarged scale in FIG. 1(B).
この実施例では、この半導体レーザ２６の真性Ｓｉ領域
３０側の層４０を、化合物半導体材料例えばＧａＡｓ及
びＡＲＧａＡｓの＋４膜結晶を交互に積層して形成した
多層構造すなわち多重蓋子井戸（ＭＱＷ）層としている
。この場合、各層の膜厚とＡｎＧａＡｓの組成とを適当
に設定することにより、共振器用の鏡として作用させる
ことが出来る。このＭＱＷ層４０の上側の各層は順次に
ｎ−Ａ文ＧａＡｓ層４２、この層４２よりもＡ文組成が
少ないＡＭＧａＡｓ活性層４４、層４２とＡ１組成が同
じｐ−ＡＪＩＧａＡｓ層４６、層４層上６一のＭＱＷ層
４８、Ｐ側オーミックコンタクトを取るためのｐ−Ｇａ
Ａｓ層５０である。In this embodiment, the layer 40 on the side of the intrinsic Si region 30 of the semiconductor laser 26 has a multilayer structure, that is, a multiple lattice well (MQW) layer formed by alternately stacking +4 film crystals of compound semiconductor materials such as GaAs and ARGaAs. There is. In this case, by appropriately setting the thickness of each layer and the composition of AnGaAs, it can be made to act as a mirror for a resonator. The layers above this MQW layer 40 are sequentially an n-A structure GaAs layer 42, an AMGaAs active layer 44 having a smaller A structure composition than this layer 42, a p-AJI GaAs layer 46 having the same A1 composition as the layer 42, and a layer 4 layer. Upper MQW layer 48, p-Ga for making P-side ohmic contact
This is an As layer 50.
この図示例のモノリシック光電子集積回路の構造によれ
ば、受光素子２４及び半導体レーザの出力を一定にする
ような電子回路を予め通常の半導体技術を利用して作り
込み、続いて、この受光素子２４の上側に、有機金属結
晶（ＭＯＣＶＤ）成長法で、面発光型半導体レーザ２６
の各層４０〜５０及びｐ側電極３４を形成することが出
来る。According to the structure of the monolithic optoelectronic integrated circuit in this illustrated example, an electronic circuit for making the output of the light receiving element 24 and the semiconductor laser constant is fabricated in advance using normal semiconductor technology, and then the light receiving element 24 is On the upper side, a surface-emitting semiconductor laser 26 is grown using a metal-organic crystalline (MOCVD) growth method.
Each of the layers 40 to 50 and the p-side electrode 34 can be formed.
この構造によれば、面発光型半導体レーザ２６から基板
側に放出された出力光を受光素子２４で受光し、この受
光素子でこの光を光電変換し、得られた電気信号をＡ２
０回路である電子集積回路２２に送り、このＡＰＣ回路
２２から半導体レーザ２８ヘフイードバツクしてその駆
動電流を制御し、よって、半導体レーザの光出力の一定
化を図ることが出来る。According to this structure, the output light emitted from the surface emitting semiconductor laser 26 toward the substrate side is received by the light receiving element 24, this light is photoelectrically converted by the light receiving element, and the obtained electric signal is converted into an A2.
The APC circuit 22 feeds back to the semiconductor laser 28 to control its driving current, thereby making it possible to stabilize the optical output of the semiconductor laser.
尚、この発明は上述した実施例にのみ限定されるもので
はなく、多くの変形又は変更をなし得ること明らかであ
る０例えば、図示例では、発光素子を半導体レーザとし
たが発光ダイオードであっても良く、また、面発光型の
発光素子に限らず端面発光型の発光素子であっても良い
、ただし、いづれの場合であっても、発光素子からの出
力光の一部分を受光素子で受光出来るように基板に発光
素子及び受光素子を配置構成することが必要である。It should be noted that the present invention is not limited only to the embodiments described above, and it is obvious that many modifications and changes can be made.For example, in the illustrated example, the light emitting element is a semiconductor laser, but it may be a light emitting diode. In addition, the light emitting element is not limited to a surface emitting type, but may be an edge emitting type.However, in either case, a portion of the output light from the light emitting element can be received by the light receiving element. It is necessary to arrange and configure the light emitting element and the light receiving element on the substrate in this manner.
さらに、図示例の構造とは異なり、発光及び受光素子並
びに電子集積回路を基板内に組み込んでプレーナ構造と
して構成することも出来る。Further, unlike the illustrated structure, the light emitting and light receiving elements and the electronic integrated circuit can be incorporated into the substrate to form a planar structure.
さらに、発光素子を構成する各層の材料は設計に応じた
任意好適な材料を用いることが出来ることはもとより、
電子集積回路の材料もこれら発光素子及び又は受光素子
と同一の材料或いはこれらとは別の材料を用いて形成す
ることが出来る。Furthermore, as the material of each layer constituting the light emitting element, any suitable material can be used depending on the design.
The electronic integrated circuit can also be formed using the same material as these light emitting elements and/or light receiving elements, or a different material.
さらに、Ｓｉ基板に直接これら各構成成分を作り込んで
も良いし、或いは、他の材料又はＳｉからなる下地上に
Ｓｉの層を形成し、そこに各構成成分を作り込んでも良
い。Furthermore, each of these constituent components may be formed directly on the Si substrate, or a layer of Si may be formed on a substrate made of other materials or Si, and each of the constituent components may be formed thereon.
さらに、上述した実施例では、電子集積回路として発光
素子の出力を一定にするためのＡ２０回路で説明したが
、この発明はこれに限定されるものではなく、光出力の
一部分を何等かの目的に利用出来るようにするための任
意好適な電子集積回路とすることが出来る。Further, in the above embodiment, the A20 circuit is used as an electronic integrated circuit to make the output of a light emitting element constant, but the present invention is not limited to this. It may be any suitable electronic integrated circuit for application.
また、発光素子の構造も実施例で示したような構造とす
る必要はなく設計に応じて任意の構造とすることも出来
る。Further, the structure of the light emitting element does not need to be the structure shown in the embodiments, and can be any structure according to the design.
（発明の効果）
上述した説明からも明らかなように、この発明によれば
、発光素子と、電子集積回路とをモノリシック集積化し
た構造としているので、モノリシック光電子集積回路自
体の構造が、従来の各構成成分の組み合わせ回路構造よ
りも、小型化し。(Effects of the Invention) As is clear from the above description, according to the present invention, the light emitting element and the electronic integrated circuit are monolithically integrated, so the structure of the monolithic optoelectronic integrated circuit itself is different from that of the conventional one. It is more compact than the combination circuit structure of each component.
従って、これを用いる他の装置への組込みが簡単かつ容
易となる。Therefore, it is simple and easy to incorporate this into other devices.
さらに、基板として安価のＳｉ基板を用いると共に、集
積化しているため、従来の各構成成分の組み合わせ工程
が必要なくなり、従って、従来よりも低価格で、例えば
発光素子の出力を一定にするＡＰＣ方式のための回路を
、提供することが出来る。Furthermore, since an inexpensive Si substrate is used as the substrate and it is integrated, there is no need for the conventional process of assembling each component. It is possible to provide a circuit for.
第１図（Ａ）及び（Ｂ）はこの発明のモノリシック光電
子集積回路の一実施例を説明するための断面図及び要部
断面図、
第２図は従来のＡＰＣ方式を説明するためのブロック線
図である。
２０・・・ｐ−Ｓｉ基板、 ２２・・・電子集積回路
２４・・・受光素子
２６・・・発光素子（半導体レーザ）
２８・・・ｎ−３ｔ領域、 ３０・・・真性Ｓｉ領域
３２・・・絶縁膜、 ３４・・・ｐ側電極３Ｂ
・・・ｎ側電極
３８・・・接続導体（ｐ側電極）
４０．４Ｂ・ＭＱＷ層、 ４２・・−ｎ−ＡＪＬＧａ
Ａ ｓ層４４・・・Ａ文ＧａＡｓ活性層
４８・・・ｐ −Ａ Ｉ Ｇ ａ Ａ ｓ層５０−・・
ｐ −Ｇ ａ Ａ ｓ層）
特許出願人 沖電気工業株式会社２０： Ｐ−５
ｊｈｇ ＪＯ：真ｔｌＪｉ４ｔＡ２２ 電）１１
ｔｉｒｊ３ｊｔ ３２１ｉ！Ｉ膜２４ ＝ ４ｉ光
１１チ Ｊしｆ′Ｐイ１ツ１醜Ｃ半一１２６
−１１− Ｊ６ ： ｎ４’ｌｍ２８
： ｎ −５１Ｑ ３８ ： ＃ｒ１１４］１
＃（Ｐ４１’ｌｔ撞）４０．４８ ： ＭＱＷ漕
ｉｕ ： Ａｌ １−ａＡｓ ｍ９１４ ５０ ：
ｐ −（ｒａＡｓ）ｌＪ２：ｎ−Ａｌ（ｒａＡｓｆｉ
１６：Ｐ−ＡＪ＆ａＡｓＪ二〇硬１月のモノリシック
犬宜す１積圧描１第１図
／６ １４ ｆＯ／２
夜束／）ＡＰＣ方へ力説明用１”ａツ７錦胆第２図FIGS. 1(A) and (B) are a sectional view and a sectional view of essential parts for explaining an embodiment of the monolithic optoelectronic integrated circuit of the present invention, and FIG. 2 is a block diagram for explaining the conventional APC method. It is a diagram. 20... p-Si substrate, 22... electronic integrated circuit 24... light receiving element 26... light emitting element (semiconductor laser) 28... n-3t region, 30... intrinsic Si region 32. ...Insulating film, 34...p side electrode 3B
... n-side electrode 38 ... connection conductor (p-side electrode) 40.4B MQW layer, 42 ... -n-AJLGa
As layer 44...A pattern GaAs active layer 48...p-A I Ga As layer 50-...
p-GaAs layer) Patent applicant Oki Electric Industry Co., Ltd. 20: P-5
jhg JO: True tlJi4tA22 Electric) 11
tirj3jt 321i! I film 24 = 4i light 11chi Jshif'P 1tsu 1 ugly C half 126
-11- J6: n4'lm28
: n -51Q 38 : #r114]1
#(P41'lt) 40.48: MQW Row
iu: Al 1-aAs m914 50:
p-(raAs)lJ2:n-Al(raAsfi
16: P-AJ & aAsJ 20th hard January monolithic dog YIS 1 accumulation pressure drawing 1 Fig. 1/6 14 fO/2 Yotsuka/) 1”a tsu 7 brocade drawing 2nd drawing for force explanation towards APC
Claims (2)
子と電気的に接続されかつ該シリコン基板に形成された
電子集積回路と、 該シリコン基板の、前記受光素子が発光出力を受光出来
る位置に形成された発光素子とを具えることを特徴とす
るモノリシック光電子集積回路。(1) A light-receiving element formed on a silicon substrate, an electronic integrated circuit electrically connected to the light-receiving element and formed on the silicon substrate, and a position on the silicon substrate where the light-receiving element can receive light emission output. A monolithic optoelectronic integrated circuit comprising: a light emitting element formed in a monolithic optoelectronic integrated circuit;
特許請求の範囲第１項記載のモノリシック光電子集積回
路。(2) The monolithic optoelectronic integrated circuit according to claim 1, wherein the light emitting element is a surface emitting type element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60152483A JPS6214465A (en) | 1985-07-12 | 1985-07-12 | Monolithic photo-electronic integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60152483A JPS6214465A (en) | 1985-07-12 | 1985-07-12 | Monolithic photo-electronic integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6214465A true JPS6214465A (en) | 1987-01-23 |
Family
ID=15541478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60152483A Pending JPS6214465A (en) | 1985-07-12 | 1985-07-12 | Monolithic photo-electronic integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214465A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188385A (en) * | 1986-02-14 | 1987-08-17 | Omron Tateisi Electronics Co | Semiconductor light-emitting element |
| JPH02137285A (en) * | 1988-11-17 | 1990-05-25 | Matsushita Electric Ind Co Ltd | Photoelectron integrated circuit |
| EP0602895A2 (en) * | 1992-12-11 | 1994-06-22 | Canon Kabushiki Kaisha | Image display device, semiconductor device and optical equipment |
| JPH06334168A (en) * | 1993-03-26 | 1994-12-02 | Hitachi Ltd | Semiconductor element |
| JPH10126002A (en) * | 1996-10-23 | 1998-05-15 | Matsushita Electron Corp | Optical transmission module |
| JPH10229250A (en) * | 1997-02-14 | 1998-08-25 | Fuji Xerox Co Ltd | Semiconductor device |
| US5848088A (en) * | 1995-07-11 | 1998-12-08 | Seiko Epson Corporation | Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same |
| JP2007103811A (en) * | 2005-10-07 | 2007-04-19 | Sony Corp | Semiconductor light emitting device and its manufacturing method |
| JP2007188999A (en) * | 2006-01-12 | 2007-07-26 | Hitachi Lighting Ltd | Semiconductor light source device |
| USRE41336E1 (en) | 1995-01-31 | 2010-05-18 | Opnext Japan, Inc | Fabrication method for algainnpassb based devices |
| JP2018010913A (en) * | 2016-07-12 | 2018-01-18 | 富士ゼロックス株式会社 | Light-emitting device |
-
1985
- 1985-07-12 JP JP60152483A patent/JPS6214465A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0728051B2 (en) * | 1986-02-14 | 1995-03-29 | オムロン株式会社 | Semiconductor light emitting element |
| JPS62188385A (en) * | 1986-02-14 | 1987-08-17 | Omron Tateisi Electronics Co | Semiconductor light-emitting element |
| JPH02137285A (en) * | 1988-11-17 | 1990-05-25 | Matsushita Electric Ind Co Ltd | Photoelectron integrated circuit |
| EP0602895A2 (en) * | 1992-12-11 | 1994-06-22 | Canon Kabushiki Kaisha | Image display device, semiconductor device and optical equipment |
| EP0602895A3 (en) * | 1992-12-11 | 1994-09-14 | Canon Kk | Image display device, semiconductor device and optical equipment. |
| EP0851272A2 (en) * | 1992-12-11 | 1998-07-01 | Canon Kabushiki Kaisha | Image display device, semiconductor device and optical equipment |
| EP0851272A3 (en) * | 1992-12-11 | 1998-09-02 | Canon Kabushiki Kaisha | Image display device, semiconductor device and optical equipment |
| US5926238A (en) * | 1992-12-11 | 1999-07-20 | Canon Kabushiki Kaisha | Image display device, semiconductor device and optical element |
| JPH06334168A (en) * | 1993-03-26 | 1994-12-02 | Hitachi Ltd | Semiconductor element |
| USRE41336E1 (en) | 1995-01-31 | 2010-05-18 | Opnext Japan, Inc | Fabrication method for algainnpassb based devices |
| US5848088A (en) * | 1995-07-11 | 1998-12-08 | Seiko Epson Corporation | Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same |
| JPH10126002A (en) * | 1996-10-23 | 1998-05-15 | Matsushita Electron Corp | Optical transmission module |
| JPH10229250A (en) * | 1997-02-14 | 1998-08-25 | Fuji Xerox Co Ltd | Semiconductor device |
| JP2007103811A (en) * | 2005-10-07 | 2007-04-19 | Sony Corp | Semiconductor light emitting device and its manufacturing method |
| JP2007188999A (en) * | 2006-01-12 | 2007-07-26 | Hitachi Lighting Ltd | Semiconductor light source device |
| JP2018010913A (en) * | 2016-07-12 | 2018-01-18 | 富士ゼロックス株式会社 | Light-emitting device |
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