TWI566427B - Light-emitting device and manufacturing method thereof - Google Patents

Description

Light-emitting element and method of manufacturing same

The present invention relates to a light-emitting element and a method of fabricating the same, and more particularly to a light-emitting element for increasing the utilization of a semiconductor laminate and a method of fabricating the same.

Light-Emitting Diode (LED) has characteristics such as low energy consumption, long operating life, shock resistance, small size, fast response speed, and stable wavelength of output light, so it is suitable for various lighting applications. As shown in FIG. 1, the current LED chip is formed by forming a light-emitting layer (not shown) on a substrate 101, and forming dicing streets 103v, 103h to divide a plurality of light-emitting diode chips 102. However, at present, the division of the plurality of LED chips 102 is mostly laser light cutting, and is limited by the beam size of the laser beam and the leakage of the byproduct during the cutting, the cutting channel 103v, The width D of 103h must be designed to maintain at least 20 μm or more. If the area of the dicing streets 103v, 103h can be saved, the area of the illuminating laminate can be increased by about 25%.

The present invention discloses a method for fabricating a light-emitting device, comprising: providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, each of the plurality of semiconductor stacked blocks including a first electrical semiconductor layer, The light emitting layer is disposed on the first electrical semiconductor layer, and a second electrical semiconductor layer is disposed on the light emitting layer, wherein the first substrate further includes a dividing channel separating the two adjacent semiconductor stacked blocks and the Separating the props having a width of less than 10 μm; performing a first separating step comprising: providing a second substrate comprising a first electrode; performing a first bonding step comprising aligning one of the plurality of semiconductor stacked blocks a semiconductor stacked block and the second substrate such that the first semiconductor stacked block is aligned and electrically connected to the first electrode; and the first semiconductor stacked block and the first substrate are separated, and The first substrate houses a second semiconductor stacked block of the plurality of semiconductor stacked blocks.

The present invention discloses a method for fabricating a light-emitting device, comprising: providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, each of the plurality of semiconductor stacked blocks including a first electrical semiconductor layer, The light emitting layer is disposed on the first electrical semiconductor layer, and a second electrical semiconductor layer is disposed on the light emitting layer, wherein the first substrate further includes a dividing channel separating the two adjacent semiconductor stacked blocks and the Separating the props having a width of less than 10 μm; performing a first separating step comprising: providing a second substrate; performing a first bonding step comprising bonding one of the plurality of semiconductor stacked blocks to the first semiconductor stacked block and the first a second substrate; and separating the first semiconductor stacked block from the first substrate, and the first substrate retains a second semiconductor stacked block of the plurality of semiconductor stacked blocks; and performing a second bonding step comprises The first semiconductor stacked block and the second semiconductor stacked block are bonded in alignment.

101‧‧‧Substrate

102‧‧‧Light Emitter Wafer

103v, 103h‧‧‧ cutting road

D‧‧‧ cutting path width

201‧‧‧First substrate

202‧‧‧Semiconductor laminate

202a‧‧‧First electrical semiconductor layer

202b‧‧‧Lighting layer

202c‧‧‧Second electrical semiconductor layer

211‧‧‧First Sacrifice Layer

212‧‧‧ divider

221‧‧‧second substrate

231, 232, 233, 234 and 235‧‧ ‧ semiconductor laminated blocks

d‧‧‧The width of the divider

231e1‧‧‧first electrode

231e2‧‧‧second electrode

240‧‧‧ dielectric layer

241‧‧‧Laser light

301‧‧‧First substrate

302‧‧‧Semiconductor laminate

331,333‧‧‧Semiconductor laminated block

331e1, 333e1 and 335e1‧‧‧ first electrode

331e2, 333e2 and 335e2‧‧‧ second electrode

340‧‧‧ dielectric layer

361‧‧‧ element substrate

361TE1,361TE2‧‧‧perforated electrode

361E1,361E2‧‧‧Graphical metal layer

361S1, 361S2, 361S3 and 361S4‧‧‧ graphical metal layers

602‧‧‧Semiconductor laminate

602a‧‧‧First electrical semiconductor layer

602b‧‧‧Lighting layer

602c‧‧‧second electrical semiconductor layer

611‧‧‧First Sacrifice Layer

621,621'‧‧‧second substrate

621T1, 621T1’‧‧‧ first perforation

621T2, 621T2’‧‧‧ second perforation

622TE1, 622TE1'‧‧‧ first perforated electrode

622TE2, 622TE2'‧‧‧ second perforated electrode

631E1, 631E1'‧‧‧ first conductive cable

631E2, 631E2'‧‧‧Second conductive cable

632‧‧‧Semiconductor laminated block

640‧‧‧Insulation

641,641'‧‧‧Transparent packaging materials

701‧‧‧First substrate

702‧‧‧Semiconductor laminate

702a‧‧‧First electrical semiconductor layer

702b‧‧‧Lighting layer

702c‧‧‧Second electrical semiconductor layer

711‧‧‧First Sacrifice Layer

721‧‧‧second substrate

721T‧‧‧Perforation

721TE‧‧‧first perforated electrode

722EE and 722E‧‧‧ electrodes

731,732,733 and 734‧‧‧Semiconductor laminated blocks

791,792‧‧‧conductive oxide layer

793‧‧‧reflective metal layer

794‧‧‧Ohm contact metal layer

795‧‧‧Insulation

Figure 1 shows a conventional substrate for a light-emitting diode wafer.

2A to 2E are views showing an embodiment of a separation method used in the method of manufacturing a light-emitting element of the present invention.

Fig. 2F is a view showing an intermediate step of the first embodiment of the method for producing a light-emitting element of the present invention.

3A to 3F show a first embodiment (parallel case) of a method of manufacturing a light-emitting element of the present invention.

Fig. 4 is a view showing a first embodiment (parallel case) of a method of manufacturing a light-emitting element of the present invention.

Fig. 5 is a view showing a first embodiment (in the case of a series connection) of a method of manufacturing a light-emitting element of the present invention.

6A to 6B are views showing a second embodiment of the method of manufacturing a light-emitting element of the present invention.

Fig. 6C to Fig. 6D show a third embodiment of the method of manufacturing a light-emitting element of the present invention.

7A to 7G are diagrams showing a fourth embodiment of the method of manufacturing a light-emitting element of the present invention.

7H to 7K show a fifth embodiment of the method of manufacturing a light-emitting element of the present invention.

2A to 2E show an embodiment of a separation method used in the method of manufacturing a light-emitting element of the present invention. 3 to 5 show a first embodiment of a method of fabricating a light-emitting device of the present invention, wherein FIGS. 3A to 3F and FIG. 4 show light-emitting elements formed by parallel connection of a plurality of semiconductor stacked blocks; Fig. 5 shows a light-emitting element formed by a series connection of a plurality of semiconductor stacked blocks.

In FIG. 2A, a semiconductor stack 202 is formed on the first substrate 201. The semiconductor stack 202 includes a first electrical semiconductor layer 202a; a light emitting layer 202b is disposed over the first electrical semiconductor layer 202a; The second electrical semiconductor layer 202c is located above the light emitting layer 202b. The first electrical semiconductor layer 202a and the second electrical semiconductor layer 202c are electrically different, for example, the first electrical semiconductor layer 202a is an n-type semiconductor layer, and the second electrical semiconductor layer 202c is a p-type semiconductor layer. The first electrical semiconductor layer 202a, the light emitting layer 202b, and the second electrical semiconductor layer 202c are formed of a III-V material, such as an aluminum gallium indium phosphide (AlGaInP) series material or aluminum gallium indium nitride (AlGaInN). Series of materials. In FIG. 2B, a patterning step is performed to form a trench 212 of width d, and the semiconductor stack 202 is patterned into a plurality of semiconductor stacked blocks 231, 232, 233, 234 and 235. That is, two adjacent semiconductor stacked blocks are separated by a divider 212. In order to increase the area of use of the semiconductor stack 202, the width d of the spacers may be minimized, for example, less than 20 μm, more preferably less than 10 μm. In one embodiment, the width d of the spacers is less than 5 μm. The above-mentioned patterning generally refers to a process of etching after covering the photoresist and exposing it to development. However, the method of patterning is not limited thereto, and other methods, such as direct cutting of the semiconductor stack 202 by laser, are also an embodiment. In addition, the plurality of semiconductor stacked blocks each have a top view shape after being patterned, and the top view shape may include a diamond line, a square, a rectangle, a triangle, or a circle. It should be noted that the semiconductor stack 202 may be grown on the first substrate 201, that is, the first substrate 201 is a growth substrate of the semiconductor laminate; however, it is also possible that the semiconductor laminate 202 is formed after another growth substrate is formed. The semiconductor stack is transferred to the first substrate 201 by the transfer technique. In this case, the semiconductor layer 202 and the first substrate 201 may further include a bonding layer (not shown). The transfer technique is known to those skilled in the art and will not be described here. Alternatively, in another embodiment, the semiconductor stack 202 is formed by another growth substrate and patterned into the plurality of semiconductor stacked blocks 231, 232, 233, 234 and 235, and then transferred to the semiconductor stacked blocks 231, 232, 233, 234 by a transfer technique. 235 is transferred to the first substrate 201 to form the case of FIG. 2B. Similarly, in this case, the semiconductor stacked blocks 231, 232, 233, 234 and 235 and the first substrate 201 may further include a bonding layer (not shown). Next, a first sacrificial layer 211 is formed on the semiconductor stacked block to be removed to facilitate the separation step. In the present embodiment, the semiconductor stacked blocks to be removed are the semiconductor stacked blocks 232 and 234. The first sacrificial layer 211 may be formed by forming a whole layer of the first sacrificial layer 211 on the entire first substrate 201, and then selectively removing the semiconductor stacked block in the yellow light and etching process. The first sacrificial layer 211 is left on 232 and 234. It should be noted that those skilled in the art also understand that in the process sequence, the first sacrificial layer 211 may be formed at the position of the semiconductor stacked blocks 232 and 234 to be removed. A yellow light and etching process is performed to complete the steps of patterning the plurality of semiconductor stacked blocks 231, 232, 233, 234 and 235 of the semiconductor stack 202 described above. The material of the first sacrificial layer 211 may be a conductive material or a non-conductive material, such as a metal oxide, a metal, or an alloy, wherein the metal oxide may be, for example, indium tin oxide (ITO), indium oxide (InO), oxidation. Tin (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), zinc oxide (ZnO); metals such as aluminum, gold, platinum, zinc, silver, nickel, antimony, indium, tin, titanium, lead And copper, palladium; and the alloy may be, for example, an alloy of the above metals; the non-conductive material is, for example, a polymer material, an oxide, or a nitride (SiNx), wherein the polymer material may be, for example, a polymer material such as BCB or Epoxy; The material may be, for example, cerium oxide (SiO ₂ ) and aluminum oxide (Al ₂ O ₃ ); the nitride may be, for example, tantalum nitride (SiNx). The selection of the material of the first sacrificial layer 211 can be selected by those skilled in the art depending on whether the subsequent process and the product need to be electrically conductive or not. In FIG. 2C, the separating step is performed, including: providing a second substrate 221 and bonding the second substrate 221 to the first sacrificial layer 211; the second substrate 221 may be a transparent substrate or an opaque substrate, and the transparent substrate is, for example, glass. Sapphire (Al ₂ O ₃ ), CVD diamond; the opaque substrate is, for example, a bismuth (Si) substrate, an aluminum nitride (AlN), or a ceramic substrate. The selection of the material of the second substrate 221 can be selected by those skilled in the art depending on whether the subsequent process and the product need to be transparent or not. Thereafter, as shown in FIG. 2D, the semiconductor stacked blocks 232 and 234 to be removed are separated from the first substrate 201. When the above steps are performed, a laser beam 241 is applied to the interface between the semiconductor stacked blocks 232 and 234 to be removed and the first substrate 201 to make the semiconductor stacked blocks 232 and 234 and the first substrate 201 easier. Separation. As also mentioned above, the semiconductor stack 202 may also be transferred to the first first substrate 201 after the formation of another growth substrate, and then transferred to the first first substrate 201. In this case, the semiconductor laminate 202 may also be used. When transferring to the first substrate 201, a sacrificial layer (not shown) is formed between the first substrate 201 and the semiconductor substrate 232 and 234. The sacrificial layer may be formed. The material which is weak in material or weak in bonding force with the first substrate 201 is selected, so that the semiconductor stacked blocks to be removed can be removed when the semiconductor stacked blocks 232 and 234 to be removed are separated from the first substrate 201. 232 and 234 are easier to separate from the first first substrate 201.

2E shows the case where the semiconductor stacked blocks 232 and 234 are separated from the first substrate 201 after the separation step is performed, and the first substrate 201 retains the semiconductor stacked blocks 231, 233 and 235. It should be noted that the second substrate 221 and the semiconductor stacked blocks 232 and 234 thereon, or the first substrate 201 and the semiconductor stacked blocks 231, 233 and 235 thereon, both of which may be in the light-emitting element of the present invention described below It is used in the embodiment of the manufacturing method.

Referring to FIG. 2F, following the separation method shown in FIGS. 2A to 2E, the first substrate 201 and the semiconductor stacked blocks 231, 233 and 235 thereon are used as an example to illustrate the first embodiment of the method for manufacturing the light-emitting device of the present invention. The forming method further includes: forming a first electrode 231e1 on the semiconductor stacked blocks 231 and 233, respectively correspondingly electrically connecting the first electrical semiconductor layer 202a of the semiconductor stacked blocks 231 and 233, and in the semiconductor stacked block 231 and A second electrode 231e2 is formed on the 233 to electrically connect the second electrical semiconductor layer 202c of the semiconductor stacked blocks 231 and 233, respectively. The process method can be First, an etching process is applied to the semiconductor stacked blocks 231 and 233 and the like to expose a portion of each of the semiconductor stacked blocks to the first electrically conductive semiconductor layer 202a. Thereafter, a dielectric layer 240 is formed on the first substrate 201, and the positions of the first electrode 231e1 and the second electrode 231e2 are defined in the dielectric layer 240, and finally the plurality of first electrodes 231e1 and the plurality are formed. The second electrode 231e2 is formed by, for example, metal deposition or electroplating to fill the position of the first electrode 231e1 and the second electrode 231e2 in the dielectric layer 240, and then remove the plating by dielectric polishing (CMP). Excess metal material on layer 240.

3A to 3C are identical or similar in structure and material, etc., as shown in Fig. 2F, so the same or similar component code only changes the first code from "2" to "3". 3A shows that a semiconductor substrate 302 is provided on the first substrate 301, and in FIG. 3B, the semiconductor laminate 302 has a semiconductor stacked block such as semiconductor stacked blocks 331, 333 and 335 by the above separation method. On the other substrate 301, it should be noted that, for convenience of explanation, only the semiconductor stacked blocks 331 and 333 will be mainly described below. FIG. 3C illustrates the result of forming the dielectric layer 340 and the plurality of first electrodes 331e1 and the plurality of second electrodes 331e2 as shown in FIG. 2F.

3D to 3F show a method of manufacturing the element substrate of the present embodiment, which is used to interface with the first substrate 301 of Fig. 3C to form a light-emitting element of the final result of the embodiment. The element substrate 361 is shown in FIG. 3D, and then the element substrate 361 is formed with two perforated electrodes 361TE1 and 361TE2 in FIG. 3E. Each of the perforated electrodes is formed by a perforation and a conductive material filled therein. The two perforated electrodes 361TE1 And 361TE2 is used to provide an external power supply for the input of the light-emitting element disclosed in the present invention. In FIG. 3F, the patterned metal layers 361E1 and 361E2 are electrically connected to the two via electrodes 361TE1 and 361TE2, respectively, to achieve parallel connection of the plurality of semiconductor stacked blocks in the embodiment. In another embodiment, the patterned metal layers 361E1 and 361E2 are formed of the same conductive material as the two via electrodes 361TE1 and 361TE2, that is, the patterned metal layers 361E1 and 361E2 are formed. The conductive material is also filled into the perforations of the two perforated electrodes 361TE1 and 361TE2 at the same time.

Fig. 4 is a view showing a method of manufacturing a light-emitting element in parallel with a plurality of semiconductor stacked blocks of the present embodiment, which is continued from Fig. 3C and Fig. 3F. Figure (a) shows the first substrate 301 in Figure 3C, which is turned over 180 degrees, as shown in Figure (b); Figure (c) shows the element substrate in Figure 3F. 361; the first substrate 301 of the figure (b) is aligned with the element substrate 361 of the figure (c) to form a light-emitting element of the final result of the present embodiment, as shown in (d) of the drawing. Figure (d) above is a partial enlarged display. As shown in the enlarged portion, the above-described alignment bonding causes the patterned metal layer 361E1 to be bonded to the first electrodes 331e1 of the semiconductor stacked blocks 331 and 333, and the patterned metal layer 361E2 and the semiconductor stacked blocks 331 and 333. Since the second electrodes 331e2 are joined, a plurality of semiconductor stacked blocks such as the semiconductor stacked block 331 and the semiconductor stacked block 333 are connected in parallel.

5 is a view showing a method of manufacturing a series of light-emitting elements of a plurality of semiconductor stacked blocks of the present embodiment, and similarly, based on FIG. 3C and FIG. 3F, (a) is a first substrate of the foregoing FIG. 3C. 301, after flipping it 180 degrees, the situation is as shown in (b) of the figure; (c) is a component substrate 361 having patterned metal layers 361S1, 361S2, 361S3 and 361S4; The electrodes 361TE1 and 361TE2 are disposed in the element substrate 361 and are respectively located under the patterned metal layers 361S1 and 361S2 in the figure to provide an external power source for inputting the light-emitting element disclosed in the present invention. Finally, as shown in (d) of the drawing, the first substrate 301 of the drawing (b) is aligned with the element substrate 361 of the drawing (c) to form the light-emitting element of the present embodiment. The part below (d) is enlarged for partial display. As shown in the enlarged part, the above-mentioned alignment bonding makes the patterned metal layers 361S1, 361S2, 361S3 and 361S4 and the semiconductor stacked blocks 331 and 333 and the like. Since the first electrode 331e1 and the second electrode 331e2 of the semiconductor stacked block are joined, a plurality of semiconductor stacked blocks such as the semiconductor stacked block 331 and the semiconductor stacked block 333 are connected in series.

The description of the first embodiment above is based on FIG. 2F, and the first substrate in FIG. 2E is used. 201 and the semiconductor stacked blocks 231 and 233 thereon are exemplified, but as mentioned in FIG. 2E, the second substrate 221 and the semiconductor stacked blocks 232 and 234 thereon may also be the manufacture of the light-emitting element of the present invention. The embodiments of the method are used, and those skilled in the art can also implement the same as the first embodiment described above based on the second substrate 221 and the semiconductor stacked blocks 232 and 234 thereon based on the above description. The manufacture of similar light-emitting elements will not be repeated.

6A to 6D show second and third embodiments of the method of fabricating the light-emitting device of the present invention, wherein the second embodiment of FIGS. 6A and 6B shows the second substrate 221 of FIG. 2E as the light-emitting element of the present embodiment. The manufacturing method of the element substrate; and the third embodiment of FIGS. 6C and 6D shows a manufacturing method when another substrate is used as the element substrate of the light-emitting element.

6A is taken as an example of the second substrate 221 of FIG. 2E and the semiconductor stacked block 232 thereon. It should be noted that the same components in FIG. 6A as in FIG. 2E only change the first code from "2" to "6". The components are identical or similar in structure, material, and the like to that shown in FIG. 2E. The second substrate 621 of the present embodiment further includes a first through electrode 622TE1 and a second through electrode 622TE2, wherein the first through electrode 622TE1 is formed by the second substrate 621. A through hole 621T1 and a first conductive material filled therein are formed, and the second through electrode 622TE2 is composed of a second through hole 621T2 of the second substrate 621 and a second conductive material filled therein. In an embodiment, the first conductive material and the second conductive material are the same material. Next, a one-bit bonding process is performed to bond the semiconductor stacked block 632 and the second substrate 621 of FIG. 6A such that the semiconductor stacked block 632 is located between the first via electrode 622TE1 and the second via electrode 622TE2 of the second substrate 621. Thereafter, the semiconductor stacked block 632 is subjected to an etching process to expose a portion of the semiconductor stacked block 632 to its second electrically conductive semiconductor layer 602c. Next, as shown in FIG. 6B, an insulating layer 640 is formed on the sidewall of the semiconductor stacked block 632 to provide electrical isolation between the subsequently formed first conductive connecting line 631E1 and the semiconductor stacked block 632. Then, a first conductive connection line 631E1 and a second conductive connection line 631E2 are formed, wherein the first conductive connection line 631E1 is electrically connected to the first electrical semiconductor layer 602a and the first perforated electrode 622TE1 of the semiconductor stacked block 632, The second conductive connection line 631E2 is electrically connected to the second electrical semiconductor layer 602c and the second via electrode 622TE2 of the semiconductor stacked block 632. Finally, a transparent encapsulating material 641 is formed on the second substrate 621 and covers the semiconductor stacked block 632, the first conductive connecting line 631E1, and the second conductive connecting line 631E2. Thus, the light-emitting element of the second embodiment of the present invention is completed, wherein the first perforated electrode 622TE1 and the second perforated electrode 622TE2 are used to provide an external power source for inputting the light-emitting element disclosed in the present invention.

6C and 6D illustrate a manufacturing method in which another substrate is used as an element substrate of a light-emitting element. In FIG. 6C, the second substrate 221 and the semiconductor stacked block 232 and the semiconductor stacked block 234 thereon are exemplified. In this embodiment, although a plurality of semiconductor stacked blocks, for example, a semiconductor stacked block 232 and a semiconductor stacked block 234, are used to form a plurality of light-emitting elements, the two semiconductor stacked blocks 232 are illustrated. 234, however, may be implemented only for a single semiconductor stacked block 232 (or semiconductor stacked block 234). A semiconductor stacked block 232 (and/or a semiconductor stacked block 234) separated from the first substrate 201 by the separation step is bonded to the second substrate 221. Since the present embodiment exemplifies a manufacturing method in which another substrate is an element substrate of a light-emitting element, the second substrate 221 is functionally a temporary substrate, and the implementation method includes providing an element substrate 621 ′, the element substrate 621 ′ A first via electrode 622TE1' and a second via electrode 622TE2' (note that this embodiment also exemplifies the simultaneous use of a plurality of semiconductor stacked blocks, such as the semiconductor stacked block 232 and the semiconductor stacked block 234 to form a plurality of light. The method for implementing the components, so that two sets of first perforated electrodes 622TE1' and second perforated electrodes 622TE2' are respectively shown for the use of the semiconductor stacked block 232 and the semiconductor stacked block 234, wherein A perforated electrode 622TE1' is composed of one of the first through holes 621T1' of the element substrate 621' and a first conductive material filled therein, and the second perforated electrode 622TE2' is composed of the element substrate 621' It has one of the second through holes 621T2' and a second conductive material filled therein. In an embodiment, the first conductive material and the second conductive material are the same material. Next, a pair of bit bonding is performed to bond the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) and the element substrate 621' such that the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) is positioned on the element substrate 621. Between the first perforated electrode 622TE1' and the second perforated electrode 622TE2'. Thereafter, the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) is separated from the second substrate 221: similarly, in performing this step, the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) may also be used. A laser light irradiation (not shown) is applied to the interface of the first sacrificial layer 211 to assist in the separation of the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) from the first sacrificial layer 211.

Next, as shown in FIG. 6D, an etch process is applied to the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) to expose a portion of the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) to Its first electrical semiconductor layer 202a. Then, an insulating layer 640 is formed on sidewalls of the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) to provide a subsequently formed second conductive connecting line 631E2' and a semiconductor stacked block 232 (and/or semiconductor) Electrically insulating between the stacked blocks 234); a first conductive connecting line 631E1' and a second conductive connecting line 631E2' are formed, wherein the first conductive connecting line 631E1' is electrically connected to the semiconductor stacked block 232 (and Or the first electrical semiconductor layer 202a and the first via electrode 622TE1' in the semiconductor stacked block 234), and the second conductive connection line 631E2' is electrically connected to the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) The second electrical semiconductor layer 202c and the second via electrode 622TE2'. Finally, a transparent encapsulating material 641' is formed on the element substrate 621' and covers the semiconductor stacked block 232 (and/or the semiconductor stacked block 234), the first conductive connecting line 631E1', and the second conductive connecting line 631E2'. Thus, the light-emitting element of the third embodiment of the present invention is completed, wherein the first via electrode 622TE1' and the second via electrode 622TE2' are used to provide an external power supply for the light-emitting element of the present invention. In the case where the implementation method is implemented for both the semiconductor stacked block 232 and the semiconductor stacked block 234, it includes further figures. The LL' line is cut as shown in the figure to obtain a plurality of light-emitting elements.

The description of the second and third embodiments described above is exemplified by the second substrate 221 of FIG. 2E and the semiconductor stacked block 232 and/or the semiconductor stacked block 234 thereon, as mentioned in FIG. 2E. The first substrate 201 and the semiconductor stacked blocks 231 and 233 thereon may also be used as an embodiment of the method for fabricating the light-emitting device of the present invention, and those skilled in the art may also use the first substrate based on the above description. The manufacture of the light-emitting elements of the same or similar to the above-described first embodiment is based on the semiconductor stack blocks 231 and 233 on the basis of 201, and the description thereof will not be repeated.

7A to 7G show a fourth embodiment of the method of manufacturing the light-emitting element of the present invention. Following the separation method shown in FIGS. 2A to 2E described above, the fourth embodiment is the second substrate 221 of FIG. 2E and the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) thereon and the first The substrate 201 and the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) thereon are exemplified.

It should be noted that the same components in FIG. 7A as those in FIG. 2E only change the first code from "2" to "7", and the components in the structure, materials, and the like are the same as or similar to those shown in FIG. 2E. The second substrate 721 in FIG. 7A further includes a first via electrode 721TE, wherein the first via electrode 721TE is composed of a first via 721T of the second substrate 721 and a first conductive material filled therein. In addition, the bonding of the second substrate 721 and the first sacrificial layer 711 is a pair bonding process to connect the semiconductor stacked block 732 (and/or the semiconductor stacked block 734) to the first via electrode 721TE and form an electrical connection. Sexual connection. Therefore, as shown in FIG. 7A, the second substrate 721 is bonded with the semiconductor stacked block 732 (and/or the semiconductor stacked block 734) separated from the first substrate 701 after the separation step; the first substrate 701 is subjected to a separation step. Thereafter, a semiconductor stacked block 731 (and/or a semiconductor stacked block 733) is retained; then, a second bonding step is performed to bond the semiconductor stacked block 732 (and/or the semiconductor stacked block 734) to the semiconductor stacked Above block 731 (and/or semiconductor stack block 733), the situation is as shown in Figure 7B. It should be noted that this embodiment also exemplifies simultaneous A method of forming a plurality of light-emitting elements is illustrated, so that the bonding of two sets of semiconductor stacked blocks is illustrated, that is, the semiconductor stacked block 732 and the semiconductor stacked block 731 are bonded into a group, and the semiconductor stacked block 734 and the semiconductor stacked The slabs 733 are another group; however, they may be implemented only for any one of the above combinations, or for both groups at the same time (hereinafter, a dicing is required to form a plurality of illuminating elements, and the description will not be repeated).

Next, the semiconductor stacked block 731 (and/or the semiconductor stacked block 733) is separated from the first substrate 701, as shown in FIG. 7C, and FIG. 7D shows the case where the transfer of FIG. 7C is 180 degrees. It should be noted that, for convenience of description, only a case where a group of semiconductor stacked blocks in FIG. 7C is bonded is illustrated in FIG. 7D. In addition, as shown in FIG. 7E, before performing the second bonding step, a conductive oxide layer 791 may be selectively formed on the semiconductor stacked block 731 (and/or the semiconductor stacked block 733) and the conductive oxide layer. 792 is on semiconductor stack 732 (and/or semiconductor stack 734). The conductive oxide layer 791 or the conductive oxide layer 792 may provide ohmic contact with the semiconductor stacked block and/or as a bonding layer, and the conductive oxide layer may be, for example, indium oxide (InO), tin oxide (SnO), or cadmium tin oxide (CTO). , antimony tin oxide (ATO), zinc oxide (ZnO). In the present embodiment, the conductive oxide layer 791 and the conductive oxide layer 792 both provide the function of the bonding layer, and the conductive oxide layer 791 provides ohmic contact with the semiconductor stacked block 731 (and/or the semiconductor stacked block 733). In addition, a metal layer may be selectively formed on at least one of the semiconductor stacked block 731 (and/or the semiconductor stacked block 733) and the semiconductor stacked block 732 (and/or the semiconductor stacked block 734). The layers can provide ohmic contact with the semiconductor stacked blocks and/or provide reflection. As shown in FIG. 7E, in the present embodiment, an ohmic contact metal layer 794 and a reflective metal layer 793 are formed before the conductive oxide layer 792 is formed on the semiconductor stacked block 732 (and/or the semiconductor stacked block 734). On semiconductor stack block 732 (and/or semiconductor stack block 734), ohmic contact metal layer 794 provides ohmic contact with semiconductor stack block 732 (and/or semiconductor stack block 734), such as gold telluride ( GeAu), while the reflective metal layer 793 provides the function of a mirror, such as silver (Ag). In addition, the ohmic contact metal layer 794 and the reflective metal layer 793 may be metal or alloy, and the metal may be For example, aluminum, gold, ruthenium, platinum, zinc, silver, nickel, ruthenium, indium, tin, titanium, lead, copper, palladium; and the alloy may be, for example, an alloy of the above metals. The semiconductor stacked block 731 (and/or the semiconductor stacked block 733) is bonded to the semiconductor stacked block 732 (and/or the semiconductor stacked block 734) by the conductive oxide layer 791 and the conductive oxide layer 792, and the first After the substrate 701 is separated, it is rotated by 180 degrees as shown in FIG. 7F. Similarly, for convenience of explanation, only a case where a group of semiconductor stacked blocks in FIG. 7E is bonded is illustrated in FIG. 7F.

Next, the present embodiment will be described with reference to FIG. 7F (it should be noted that, in other embodiments, the following process may be performed in conjunction with FIG. 7D), as shown in FIG. 7G, in the semiconductor stacked block 731 and the semiconductor stacked layer. The sidewall of block 732 defines an insulating layer 795. Then, an electrode 722EE and 722E are formed on the second substrate 721 and electrically connected to the first electrical semiconductor layer 702a of the semiconductor stacked block 731. The insulating layer 795 provides electrical insulation between the electrodes 722EE and 722E and the semiconductor stacked block 731 and the semiconductor stacked block 732. Thus, the light-emitting element of the fourth embodiment of the present invention is completed. The light-emitting element includes a semiconductor stacked block 731 and a semiconductor stacked block 732, and is a light-emitting element of a double joint surface, and the electrodes 722EE and 722E and the first perforated electrode 721TE. It is used to provide an external power supply for the light-emitting element disclosed in the present invention.

7H to 7K illustrate a fifth embodiment of the method of manufacturing the light-emitting element of the present invention, which is a variation of the above-described fourth embodiment. In the present embodiment, a second bonding step is first performed by using the separation method shown in FIGS. 2A to 2E, that is, the semiconductor stacked block 232 (and/or semiconductor) on the second substrate 221 in FIG. 2E. The laminated block 234) is in alignment with the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) on the first substrate 201, as shown in Fig. 7H. Next, as shown in FIG. 7I, the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) is separated from the second substrate 221. Thereafter, an element substrate may be bonded to the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) to serve as an element substrate of the light emitting element. In another embodiment, the first substrate 201 may be removed to make the semiconductor stack The layer block 231 (and/or the semiconductor stacked block 233) is separated from the first substrate 201, and the element substrate is bonded to the bonded semiconductor stacked block 231 (and/or the semiconductor stacked block 233). Then, as shown in FIG. 7J, a second substrate 721 is provided as an element substrate of the light-emitting element, and the second substrate 721 includes a first through-hole electrode 721TE, wherein the first through-hole electrode 721TE is composed of the second substrate 721. It has one of the first through holes 721T and one of the first conductive materials filled therein. Next, a third bonding step is performed to bond the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) to the second substrate 721, and the semiconductor stacked block 232 is formed as shown in FIG. 7J (and/or The semiconductor stacked block 234) is aligned and electrically connected to the first via electrode 721TE of the second substrate 721. Finally, the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) is separated from the first substrate 201, and the insulating layer 795 and the electrodes 722EE and 722E are formed as illustrated in FIG. 7G, resulting in a light-emitting element as shown in FIG. 7K. . It should be noted that before the alignment bonding of the second bonding step in FIG. 7H, that is, the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) and the semiconductor stacked block 231 (and/or the semiconductor stacked block) 233) Before performing the para-bonding, as described in FIG. 7E, a conductive oxide layer may be selectively formed on the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) and the semiconductor stacked block 232 (and And/or a semiconductor stacked block 234); and optionally a metal layer is formed on the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) and the semiconductor stacked block 232 (and/or the semiconductor stacked block 234) In at least one of them, the details have been explained above, and will not be described again. In addition, as mentioned in FIG. 7I, in another embodiment, the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) may be separated from the first substrate 201 and removed. Is the first substrate 201, and the third bonding step, which is subsequently performed in FIG. 7J, is to bond the semiconductor stacked block 231 (and/or the semiconductor stacked block 233) to the second substrate 721, and then to laminate the semiconductor. Block 232 (and/or semiconductor stack 234) is separated from second substrate 221.

In the various embodiments described above, elements having the same function have different reference numerals in the embodiments, and have physical, chemical, or electrical characteristics, unless otherwise disclosed in the respective embodiments. In particular, it should be considered that they have the same or similar related characteristics, and need not be described in detail in the embodiments.

The above embodiments are merely illustrative of the principles of the invention and its advantages, and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is as set forth in the appended claims.

201‧‧‧First substrate

202‧‧‧Semiconductor laminate

202a‧‧‧First electrical semiconductor layer

202b‧‧‧Lighting layer

202c‧‧‧Second electrical semiconductor layer

211‧‧‧First Sacrifice Layer

221‧‧‧second substrate

231, 232, 233, 234 and 235‧‧ ‧ semiconductor laminated blocks

Claims (10)

A method for manufacturing a light-emitting device, comprising: providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, each of the plurality of semiconductor stacked blocks including a first electrical semiconductor layer, and a light-emitting layer disposed thereon The first electrically conductive semiconductor layer and the second electrically conductive semiconductor layer are disposed on the luminescent layer, wherein the first substrate further comprises a dividing channel separating two adjacent semiconductor stacked blocks and the separating prop has a width A first separating step is performed, comprising: providing a second substrate including a first electrode; performing a first bonding step including aligning bonding one of the plurality of semiconductor stacked blocks to the first semiconductor stacked Blocking the second semiconductor substrate such that the first semiconductor stacked block is aligned with the first electrode and electrically connected; and separating the first semiconductor stacked block from the first substrate, and the first substrate A second semiconductor stacked block of the plurality of semiconductor stacked blocks remains. The method of manufacturing a light-emitting device according to claim 1, further comprising: performing a second bonding step of aligning the first semiconductor stacked block on the second semiconductor stacked block; and separating the a second semiconductor stacked block and the first substrate. The method for manufacturing a light-emitting device according to claim 2, further comprising forming a second electrode on the second substrate and electrically connecting the second semiconductor stacked block. A method for manufacturing a light-emitting device, comprising: providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, each of the plurality of semiconductor stacked blocks including a first electrical semiconductor layer, and a light-emitting layer disposed thereon The first electrically conductive semiconductor layer and the second electrically conductive semiconductor layer are disposed on the luminescent layer, wherein the first substrate further comprises a dividing channel separating two adjacent semiconductor stacked blocks and the separating prop has a width a first separating step, comprising: providing a second substrate; performing a first bonding step comprising bonding one of the plurality of semiconductor stacked blocks and the second substrate; Separating the first semiconductor stacked block from the first substrate, and the first substrate retains one of the plurality of semiconductor stacked blocks; and performing a second bonding step including aligning the a first semiconductor stacked block and the second semiconductor stacked block. The method of manufacturing a light-emitting device according to claim 4, further comprising, after the second bonding step, separating the first semiconductor stacked block and the second substrate. The method of manufacturing the illuminating device of claim 5, further comprising: providing a third substrate, wherein the third substrate further comprises a first electrode; performing a third bonding step comprising aligning the first The semiconductor stacked block is on the third substrate, the first semiconductor stacked block is aligned with the first electrode and electrically connected; and the second semiconductor stacked block is separated from the first substrate. The method for manufacturing a light-emitting device according to claim 6, further comprising forming a second electrode on the third substrate and electrically connecting the second semiconductor stacked block. The method of manufacturing a light-emitting device according to claim 4, further comprising, after the second bonding step, separating the second semiconductor stacked block from the first substrate. The method of manufacturing the illuminating device of claim 8, further comprising: providing a third substrate, wherein the third substrate further comprises a first electrode; performing a third bonding step comprising aligning the second The semiconductor stacked block is connected to the first electrode and electrically connected to the first semiconductor stacked block on the third substrate; and the first semiconductor stacked block and the second substrate are separated. The method of manufacturing a light-emitting device according to claim 9, further comprising forming a second electrode on the third substrate and electrically connecting the first semiconductor stacked block.