TW201806187A - Light-emitting device - Google Patents

Abstract

A light-emitting device, comprising: a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction; a first electrode coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction; a second electrode coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction; and a dielectric layer disposed between the first electrode and the second electrode.

Description

Light-emitting element

The present invention relates to a light-emitting element, and more particularly to a light-emitting element that can increase light extraction.

A schematic diagram of a general light-emitting diode is shown in FIG. 1A and FIG. 1B, FIG. 1A is a top view, and FIG. 1B is a side view. A general light-emitting diode system forms a light-emitting layer 101 on a substrate 111, and includes a first electrical semiconductor layer 101a, an active layer 101b, and a second electrical semiconductor layer 101c in this order from bottom to top. The first electrical semiconductor layer 101a and the second electrical semiconductor layer 101c are electrically different, for example, the first electrical semiconductor layer 101a is an n-type semiconductor layer, and the second electrical semiconductor layer 101c is a p-type semiconductor layer. A first electrode 104 is disposed on the first electrical semiconductor layer 101a, and a second electrode 105 is disposed on the second electrical semiconductor layer 101c to transmit current. In addition, a transparent conductive layer 103 is also disposed on the second electrical semiconductor layer 101c as an ohmic contact layer. At present, both metal and transparent conductive materials can be applied to the LED element as an ohmic contact material, but the metal has the advantage of good current transfer but has the disadvantage of light absorption, while the transparent conductive material has the advantage of light transmission, but the current transfer is not as good as the metal. . Therefore, most of the current solutions use the transparent conductive layer 103 for ohmic contact, and at the same time, the metal wire is used as the extension electrode 105a to transmit current. In the design of the extension electrode 105a with metal wires, good current spreading can be achieved, but the shading of the metal is also increased, resulting in loss of brightness.

A light-emitting element comprising: a light-emitting layer having a length, a width, a first electrical semiconductor layer, an active layer on the first electrical semiconductor layer, and a second electrical semiconductor layer on the Above the active layer, wherein the first electrical semiconductor layer, the active layer, and the second electrical semiconductor layer are stacked in a stacking direction; a first electrode and the first electrical semiconductor layer are connected and parallel Extending in a direction of the stacking direction; a second electrode and the second electrical semiconductor layer are joined and extending in a direction parallel to the stacking direction; and an insulating layer is located between the first electrode and the second electrode.

2 is a first embodiment of the present invention. As shown in FIG. 2A, a light-emitting layer 201 is formed on a substrate 211. The light-emitting layer 201 includes a first electrical semiconductor layer 201a and an active layer from bottom to top. 201b and the second electrical semiconductor layer 201c. The first electrical semiconductor layer 201a and the second electrical semiconductor layer 201c are electrically different, for example, the first electrical semiconductor layer 201a is an n-type semiconductor layer, and the second electrical semiconductor layer 201c is a p-type semiconductor layer. A portion of the self-luminous stack 201 is then used for subsequent steps. The method can be, for example, an Epitaxy Lift-Off (ELO) method. As shown in FIG. 2A, a laser is first used between the portion C to be accessed and the adjacent portion L and the R portion. Cutting or lithography and etching are formed such as the dividing line 213 and the dividing line 213' to facilitate subsequent migration. A temporary substrate 212, such as glass, is then provided to engage the portion of C that is to be accessed. For example, a bonding material (not shown) may be formed between the bonding surface 215 (shown in FIG. 2B), and the temporary substrate 212 and the substrate 211 may be heated and pressed to be bonded. The bonding substance may be a conductive material or a non-conductive material, for example, a metal or alloy material such as gold, silver, or tin or an alloy thereof. The non-conductive substance includes, for example, polyimine (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin (Epoxy), other organic bonding materials, and the like. The manner of joining is well known in the art and will not be described. After the bonding is formed, a laser light irradiation 214 may be applied to the interface between the portion C to be used and the substrate 211, and the portion C to be taken up is removed by the bonding of the temporary substrate 212. As shown in FIG. 2B, the epitaxial migration step is completed. As shown in Fig. 2B, the removed light-emitting layer 201 has a length L and a width W, and the illustrated x-axis is parallel to the length L, and the y-axis is parallel to the width W.

Next, as shown in FIG. 2C, a permanent substrate 206 is provided. The permanent substrate 206 can be a conductive substrate or a non-conductive substrate, and the conductive substrate can be a semiconductor material such as silicon, tantalum carbide, or a metal. The non-conductive substrate may be, for example, sapphire (Al 2 O 3 ), glass, or a ceramic material. In this embodiment, the germanium substrate 206b, which is commonly used in the industry, is selected. In this embodiment, the horizontal structure is formed. Therefore, an insulating layer 206a such as tantalum oxide is formed thereon to form the permanent substrate 206 of the embodiment. A conductive layer 202 is then formed on the permanent substrate 206, and the width W' of the conductive layer 202 is greater than the width W of the removed light-emitting layer 201. Conductive layer 202 can be, for example, a metal or metal oxide or a laminate of the two. The metal may be, for example, indium (In), gold (Au), titanium (Ti), platinum (Pt), aluminum (Al), silver (Ag), or the like, or an alloy of the above metals, or a laminate of the above metals. The metal oxide is, for example, indium tin oxide (ITO). The removed light-emitting laminate 201 is then bonded to the conductive layer 202. This bonding is, for example, first forming a bonding layer 208 on the light emitting laminate 201 and then bonding to the conductive layer 202. In one embodiment, for example, the bonding layer 208 is indium tin oxide (ITO), and the conductive layer 202 is a laminate of titanium (Ti)/gold (Au)/silver (Ag)/indium tin oxide (ITO) from bottom to top. The bonding layer 208 may also comprise a reflective metal to simultaneously serve as a mirror. For example, the silver (Ag)/titanium (Ti)/platinum (Pt)/gold (Au) is sequentially formed on the light emitting layer 201. The laminate is used as the bonding layer 208, and the conductive layer 202 is a laminate of titanium (Ti)/gold (Au)/indium (In) from bottom to top. Similarly, the bonding can be completed by warming and pressurizing, and a laser light can be applied to the interface of the light emitting laminate 201 and the temporary substrate 212 to remove the temporary substrate 212 as in the laser light irradiation method described above. As shown in FIG. 2D, the conductive layer 202 is located under the light-emitting layer 201 (the first electrical semiconductor layer 201a (not shown in this figure, see FIG. 2A)), and since the width W' of the conductive layer 202 is greater than that of the light-emitting layer 201. The width of the layer 201 is W, so that the conductive layer 202 can be considered to include a first overlapping portion 202a overlapping the first electrical semiconductor layer 201a and a first extending portion 202b not overlapping the first electrical semiconductor layer 201a, and The first extension 202b extends in a first direction (+y direction) parallel to the width. Next, an insulating layer 207 is formed on the light-emitting stack by, for example, a chemical vapor deposition (CVD) method or an electron beam (E-Gun) method, such as lithography and etching or a lift-off method. Layer 201 and one of the sidewalls of conductive layer 202 are as shown. The material of the insulating layer 207 may be, for example, hafnium oxide (SiO2), tantalum nitride (SiNx), aluminum oxide (Al2O3) or the like.

Next, as shown in FIG. 2E, a transparent conductive layer 203 is formed on the light-emitting layer 201 (the second electrical semiconductor layer 201c (not shown in this figure, see FIG. 2A)), and similarly, a transparent conductive layer. 203 has a width greater than a width of the second electrical semiconductor layer 201c. Therefore, the transparent conductive layer 203 can be considered to include a second overlapping portion 203a overlapping the second electrical semiconductor layer 201c and a second extending portion 203b not overlapping the second electrical semiconductor layer 201c, and the second extending portion 203b is Extending in a second direction (-y direction) parallel to the width, the second direction (-y direction) is opposite to the aforementioned first direction (+y direction). The transparent conductive layer 203 is, for example, a metal oxide or a thin metal having a thickness of less than 500 angstroms. The metal oxide is, for example, Indium Tin Oxide (ITO), Aluminium Zinc Oxide (AZO), cadmium tin oxide, antimony tin oxide, zinc oxide (ZnO), indium zinc oxide (IZO), and oxidation. Materials such as zinc tin (ZTO) or a group thereof. The thin metal is, for example, aluminum, gold, platinum, zinc, silver, nickel, ruthenium, indium, tin or an alloy of the above metals. Finally, as shown in FIG. 2F, the first electrode 204 is formed over the first extension 202b, and the second electrode 205 is over the second extension 203b. In particular, as shown, the first electrode 204 is substantially only connected to the first extension 202b of the conductive layer 202 or a portion thereof, and the second electrode 205 is substantially only the second of the transparent conductive layer 203. The extension portion 203b or a portion thereof is in contact with each other, that is, the second overlapping portion 203a of the transparent conductive layer 203 and the second electrical semiconductor layer 201c does not have the second electrode 205 or any prior art extension electrode, and thus does not There is a loss of brightness caused by metal shading. Therefore, the conduction in the direction of the parallel width (y direction) of the light-emitting layer 201 of the present embodiment is substantially only completed by the second overlapping portion 203a of the transparent conductive layer 203. For example, the transparent conductive layer 203 is indium tin oxide, and the thickness thereof is generally between 50 nm and 1 μm. Taking the conventional 120 nm as an example, the conductive (or charge transfer) distance is about 30 μm to 100 μm (that is, 0.1). Mm). Therefore, the width W of the light-emitting layer 201 of the present embodiment can be designed to be about 100 μm (that is, 0.1 mm), and for the light-emitting laminate of the area specification of 42 mil * 42 mil (about 1 mm * 1 mm, that is, 1 mm 2 ) which is commonly used in commercial business. In this embodiment, the length L of the light emitting laminate 201 can be elongated to provide the same light emitting area, so that the current is transmitted by the excellent current spreading property of the metal of the second electrode 205, and then transmitted by the transparent conductive layer 203 having high light transmittance. The current is applied to the light-emitting layer 201, so that the current can be uniformly transmitted, and the metal of the electrode or the extension electrode is shielded from light on the light-emitting area. Therefore, the length L of the light-emitting laminate 201 can be designed to be about 10 mm (1 mm 2 / 0.1 mm = 10 mm), so the ratio of the length L to the width W is 10 mm: 0.1 mm, that is, 100:1. In general, as the thickness of the indium tin oxide of the transparent conductive layer 203 is thicker, the conductive distance is longer, and the design of the width W can be wider than the above example, or adjusted in various design parameters such as the light-emitting area, such as light. The area adjustment is smaller than the above example, and the corresponding design length L is also smaller than the above example. For example, the width W is enlarged by 2 times compared with the above example, and the length L is reduced to 1/10 of the above example, and the ratio of the length L to the width W of the light-emitting layer 201 is greater than about 5:1 to achieve the above purpose.

3A to 3E show a second embodiment of the present invention. This second embodiment is a variation of the above-described first embodiment. In the first embodiment, as shown in FIG. 2F, the first electrode 204 is formed over the first extension 202b, and the second electrode 205 is formed over the second extension 203b. In the present second embodiment, as shown in FIG. 3E, the first electrode 304 is formed under the first extension portion 302b, and the second electrode 305 is formed under the second extension portion 303b. Further, in the second embodiment, the permanent substrate 206 composed of the tantalum substrate 206a having the insulating layer 206b above the first embodiment is changed to the permanent substrate 306 made of glass. Except for this, the second embodiment is substantially the same as the first embodiment. Therefore, referring to the method of FIG. 2A to FIG. 2E of the first embodiment, the structure of FIG. 3A similar to that of FIG. 2E can be obtained, including the permanent substrate 306 composed of glass, the conductive layer 302, the light-emitting layer 301, and the insulating layer. 307, and a transparent conductive layer 303. Next, as shown in FIG. 3B, the structure of FIG. 3A is bonded to the temporary substrate 362 by a bonding material 361 for subsequent electrode formation. Next, as shown in FIG. 3C, a protective layer (not shown) such as a photoresist is formed on the permanent substrate 306, but the electrodes 306a, 306b where the electrodes are to be formed are exposed, and lithographically and etched or sandblasted or The method of mixing the two uses the permanent substrate 306 where the electrodes are to be formed 306a, 306b, wherein the portion 307a where the insulating layer 307 meets the electrode where the electrode is to be formed 306a is also removed. A portion of the conductive layer 302 and a portion of the transparent conductive layer 303 are exposed to form the first electrode 304 and the second electrode 305 thereon, as shown in FIG. 3D. In some applications, the bonding material 361 and the temporary substrate 362 can be retained. In the present embodiment, the bonding material 361 and the temporary substrate 362 are removed by irradiating the bonding material 361 or etching as described above, and the structure of the second embodiment of FIG. 3E is completed. Similarly, in the present embodiment, the first electrode 304 is substantially only connected to the first extension portion 302b of the conductive layer 302 or a portion thereof, and the second electrode 305 is substantially only connected to the second extension portion of the transparent conductive layer 303. 303b or a portion thereof is connected, that is, the second overlapping portion 303a of the transparent conductive layer 303 does not have the second electrode 305 or the extension electrode, so there is no loss of brightness caused by metal shading.

4A to 4D show a third embodiment of the present invention. This third embodiment is also a variation of the above-described first embodiment. In the first embodiment, as shown in FIG. 2F, the first electrode 204 is formed over the first extension 202b, and the second electrode 205 is formed over the second extension 203b. In the present third embodiment, as shown in FIG. 4C, the first electrode 404 is formed under the first extension portion 402b, and the second electrode 405 is formed over the second extension portion 403b. In addition, in the third embodiment, the permanent substrate 206 formed by the germanium substrate 206b having the insulating layer 206a in the first embodiment is replaced by a permanent substrate 406 made of a transparent material, and the transparent material may be, for example, glass. And other dielectric materials. Except for this, the third embodiment is substantially similar to the first embodiment. Therefore, referring to the method of FIG. 2A to FIG. 2E of the first embodiment, the structure of FIG. 4A similar to that of FIG. 2E can be obtained, including the permanent substrate 406 composed of glass, the conductive layer 402, the light-emitting layer 401, and the insulating layer. 407, and a transparent conductive layer 403. It should be noted that the conductive layer 402 of the present embodiment uses indium tin oxide (ITO), so that the light-emitting layer 401 is bonded thereto, as already mentioned in the foregoing first embodiment, first, for example, oxidation is formed on the light-emitting layer 401. A bonding layer 408 of indium tin (ITO) is then bonded to the conductive layer 402. It should be noted that the conductive layer 402 on the permanent substrate 406 is covered by a whole layer. Therefore, according to the first embodiment, the conductive layer 402 may be included to include the first overlapping portion 402a and the first extending portion 402b, and further includes another A third extension 402c. Similarly, the transparent conductive layer 403 can be considered to include a second overlapping portion 403a, a second extending portion 403b, and another fourth extending portion 403c. In the present embodiment, the first extension portion 402b and the second extension portion 403b extend in the same direction (-y direction). The third extension portion 402c and the fourth extension portion 403c extend in the same direction (+y direction).

Next, as shown in FIG. 4B, another transparent material, such as a transparent substrate 462 of a dielectric material such as glass, is formed thereon, and a transparent conductive layer 403' such as indium tin oxide (ITO) is formed thereon, and then it is combined with FIG. 4A. The structural bonding, indium tin oxide (ITO) transparent conductive layer 403' is combined with a transparent conductive layer 403 which is also indium tin oxide (ITO). Next, as shown in FIG. 4C, a portion of the permanent substrate 406 and a portion of the transparent substrate 462 are removed by lithography and etching or sand blasting or a mixture of the two, and a portion of the conductive layer 402 and a portion thereof are exposed. The transparent conductive layer 403' is formed, and the first electrode 404 is formed under the first extending portion 402b, and the second electrode 405 is formed over the transparent conductive layer 403'. This third embodiment is completed.

As shown in FIG. 4C, in the third embodiment, the first electrode 404 has a first surface perpendicular to the first extension portion 402b (contacting the PP' plane), and the second electrode 405 has a perpendicular to the second extension. The second surface of portion 403b (which is in contact with the PP' plane), and the first surface and the second surface are substantially coplanar, i.e., a common PP' plane. Thus, the first surface and the second surface can be joined to a carrier (not shown), which is the PP' plane. In application, if such a device is rotated by 90 degrees, as shown in FIG. 4D, the light emitted by the light-emitting layer 401 can be transmitted in multiple directions, including a permanent substrate 406 made of a transparent material, a transparent substrate 462, and an insulating layer 407. It can be light-transmitted and has the advantage of full-circumference.

As shown in FIG. 5, the light-emitting elements of the above three embodiments can be further combined with other elements to form a light-emitting device 500. The illuminating device 500 includes a sub-mount 510 having at least one circuit 511, 512, 513, 514; at least one illuminating element is disposed on the sub-carrier 510, and in the embodiment, three illuminating elements 501, 502 are disposed. Any one of the light-emitting elements 501, 502, 503 may be any one of the light-emitting elements of the above three embodiments, and the light-emitting element 501 may be soldered by a solder (not shown). The electrodes of 502, 503 are bonded to the circuits 511, 512, 513, 514 of the secondary carrier 510. For example, the two electrodes 501a, 501b of the light-emitting element 501 are respectively bonded to the circuits 511, 512; the two electrodes 502a, 502b of the light-emitting element 502 are respectively bonded. To the circuits 512, 513; the two electrodes 503a, 503b of the light-emitting element 503 are respectively bonded to the circuits 513, 514, so that the light-emitting elements 501, 502, 503 can be fixed on the secondary carrier 510, while the light-emitting elements 501, 502, 503 pass through the circuit 511, 512, 513, 514 form a circuit in series (as in this embodiment) or in parallel or in series and parallel, and provide external power to the device 500 via conductive material structures 521, 522, such as gold or copper wires. The secondary carrier 510 is, for example, ceramic, glass, fiberglass, bakelite, or the like.

In addition to the above-mentioned implementation, the electrode and the extension electrode on the light-emitting layer can be moved to the outside of the light-emitting layer by a process, and only a small area is electrically connected, thereby achieving the effect of actively reducing the light-shielding surface to solve the metal. The problem of shading. This is implemented, for example, in the fourth embodiment of the present invention shown in Figs. 6A to 6I. In FIG. 6A, a light-emitting layer 601 including a first electrical semiconductor layer 601a, an active layer 601b, and a second electrical semiconductor layer 601c is sequentially formed on the substrate 611, and is selectively formed before the light-emitting layer 601 is formed. An intermediate layer structure 681, such as a buffer layer or the like, is formed first. Thereafter, a contact layer 604 is formed on the light-emitting layer 601. The contact layer 604 can be, for example, a transparent conductive oxide or a metal; and the transparent conductive oxide is, for example, Indium Tin Oxide (ITO), aluminum zinc oxide (Aluminum Zinc). Oxide, AZO), cadmium tin oxide, antimony tin oxide, zinc oxide (ZnO), indium zinc oxide (IZO), and zinc tin oxide (ZTO) or the like; or a metal such as aluminum, gold, Platinum, zinc, silver, nickel, ruthenium, indium, tin, antimony, platinum, rhodium or alloys of these metals. When the metal selects a highly reflective metal, such as aluminum, silver, etc., a mirror function can be provided at the same time; or a reflective structure (not shown) can be selectively applied to the contact layer 604, such as a dispersed Bragg reflection layer (Distributed). Bragg Reflector (DBR) or Omni-Directional Reflector (ODR) to provide reflection. Next, a portion of the contact layer 604 is removed by lithography and etching to form a contact layer removal region 604a. Next, as shown in FIG. 6B, a protective layer 659 is formed on the contact layer 604, and the protective layer 659 is filled in the contact layer removal region 604a, wherein as shown, there are two unprotected layers 659 on the contact layer 604. The cover is reserved for use as an electrode, namely a first electrode 604' and a second electrode 604. Next, as shown in FIG. 6C, the structure of FIG. 6B is bonded to the temporary substrate 682 by a bonding substance 683 for performing Then, a laser beam (not shown) is applied to the interface between the substrate 611 and the intermediate layer structure 681 to remove the substrate 611, and the substrate 611 can be removed by etching. The process is completed. The structure after the substrate 611 is removed is as shown in FIG. 6D.

Next, as shown in FIG. 6E, a portion of the intermediate layer structure 681 and the light-emitting layer 601 are removed by lithography and etching to form the isolation region 684, and expose the underlying contact layer 604 and (the aforementioned filling contact The layer removes the protective layer 659 of the region 604a. Thus, a whole large-area light-emitting layer 601 will be divided into a plurality of relatively small-area light-emitting units, as shown in this embodiment, which are divided into two relatively small areas of light-emitting units. The illumination units are isolated from each other by an isolation region 684. Next, as shown in FIG. 6F, an insulating layer 685 such as cerium oxide (SiO2), tantalum nitride (SiNx) or aluminum oxide (Al2O3) is formed on the structure of FIG. 6E, and then lithographically and etched. A portion of the insulating layer 685 is removed to form an electrical connection region 685a and expose the underlying contact layer 604 (and in some cases may also be exposed (previously filled into the contact layer removal region 604a) protective layer 659) The surface of the intermediate layer structure 681 is also substantially completely exposed to allow the light emitted by the light-emitting layer 601 to be emitted. In this way, the insulating layer 685 electrically isolates the respective light-emitting units, and the respective light-emitting units are electrically connected in series or in parallel or in series and parallel via the conductive layer that is subsequently filled in the electrical connection region 685a. As shown in FIG. 6G, a conductive layer 686 is formed on the structure of FIG. 6F, such as aluminum, gold, platinum, zinc, silver, nickel, antimony, indium, tin, or the like, or an alloy of the above metals, etc. And etching a portion of the conductive layer 686 to form the aforementioned electrical connections. This embodiment shows the case of electrical connection in series. The conductive layer 686 is filled into the electrical connection region 685a and electrically connected to the exposed contact layer 604, and the other end of the conductive layer 686 (ie, 605) is in contact with a portion of the surface of the intermediate layer structure 681. In addition, as shown in FIG. 6G, before the formation of the conductive layer 686, the transparent conductive layer 603 may be selectively formed on the intermediate layer structure 681. Therefore, in the embodiment, the other end (605) of the conductive layer 686 is It is in contact with the surface of the transparent conductive layer 603. As described above, since the large-area light-emitting layer 601 is divided into a plurality of relatively small-area light-emitting units, the width (W) of each light-emitting unit becomes small and is within the distance in which the current is effectively transmitted, and thus In the case of the transparent conductive layer 603, it is not necessary to provide an extension electrode on each of the light-emitting units, and the end point (ie, 605) of the conductive layer 686 electrically connected to the light-emitting layer 601 can be designed to be small, so that the uniformity can be uniformly transmitted. The current is also protected from the metal shading of the electrode or the extension electrode on the light-emitting area. Similarly, the aspect ratio of each illuminating unit can be appropriately determined as described above (for example, the ratio of the length to the width of the illuminating laminate described above is greater than about 5:1) to provide a generally applicable illuminating area. In addition, since this embodiment can also form different implementations such as series-parallel, even if the aspect ratio of each illuminating unit is not adjusted, the illuminating area of a general commercial specification can be provided through a series connection of an appropriate number of illuminating units. . Next, as shown in FIG. 6H, the structure of FIG. 6F is transparent with a transparent bonding substance 607 such as polyimine (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB). A transparent substrate 606 of a material such as glass is joined as a light-emitting surface. Next, the temporary substrate 682 and the bonding substance 683 are removed by, for example, etching, as shown in FIG. 6I, and the present embodiment is completed. The series connection of the illumination units is as described above, and the external power supply is provided through the first electrode 604' and the second electrode 604". The embodiment is a series implementation, and the above-mentioned FIG. 6A to FIG. In the method illustrated by 6I, those skilled in the art can make simple adjustments to the process, such as adjustment of contact layer removal region 604a of FIG. 6A, alignment of isolation region 684 of FIG. 6E, and conductive layer 686 of FIG. 6G. By removing the adjustment, a fifth embodiment of the present invention as shown in FIG. 7 is obtained, wherein the first code of the reference numeral of FIG. 6I is changed from "6" to "7", for example, reference numeral 606 is a transparent substrate 606. The reference numeral 706 is also a transparent substrate, and so on, so the fifth embodiment will not be described in any way. What is more, the contact layer 704 of the intermediate block (ie, the conductive layer 786 and the first electrical semiconductor) The contact layer 704) electrically connected to the layer 701a is a first electrode connected in series, and the contact layer 704 of the two sides of the block (ie, the contact layer 704 located under the second electrical semiconductor layer 701c and electrically connected thereto) is in series Two electrodes (which can be connected via the front electrode pattern configuration) Parallel connection of two illuminating units.

The above embodiments are merely illustrative of the principles of the invention and its advantages, and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is as set forth in the appended claims.

101‧‧‧Lighting laminate

101a‧‧‧First electrical semiconductor layer

101b‧‧‧Active layer

101c‧‧‧Second electrical semiconductor layer

103‧‧‧Transparent conductive layer

104‧‧‧First electrode

105‧‧‧second electrode

105a‧‧‧Extended electrode

111‧‧‧Substrate

201‧‧‧Lighting laminate

201a‧‧‧First electrical semiconductor layer

201b‧‧‧Active layer

201c‧‧‧Second electrical semiconductor layer

202‧‧‧ Conductive layer

202a‧‧‧ (the conductive layer 202) first overlap

202b‧‧‧ (the conductive layer 202) first extension

203‧‧‧Transparent conductive layer

203a‧‧‧ (the transparent conductive layer 203) second overlap

203b‧‧‧ (the transparent conductive layer 203) second extension

204‧‧‧First electrode

205‧‧‧second electrode

206‧‧‧Permanent substrate

206a‧‧‧Insulation

206b‧‧‧矽 substrate

207‧‧‧Insulation

211‧‧‧Substrate

212‧‧‧temporary substrate

213,213’‧‧‧ dividing line

214‧‧‧Laser light

215‧‧‧ joint surface

301‧‧‧Lighting laminate

302‧‧‧ Conductive layer

302a‧‧‧ (the conductive layer 302) first overlap

302b‧‧‧ (the conductive layer 302) first extension

303‧‧‧Transparent conductive layer

302a‧‧‧ (transparent conductive layer 302) first overlap

303b‧‧‧ (the transparent conductive layer 303) second extension

304‧‧‧First electrode

305‧‧‧second electrode

306‧‧‧Permanent substrate

306a, 306b‧‧‧ (permanent substrate) where electrodes are to be formed

307‧‧‧Insulation

307a ‧‧‧(insulation) where electrodes are to be formed

361‧‧‧Materials

362‧‧‧Temporary substrate

400‧‧‧Lighting elements

401‧‧‧Lighting laminate

402‧‧‧ Conductive layer

402a‧‧‧ (the conductive layer 402) first overlap

402b‧‧‧ (the conductive layer 402) first extension

402c‧‧‧ (the conductive layer 402) third extension

403‧‧‧Transparent conductive layer

403a‧‧‧ (the transparent conductive layer 403) second overlap

403b‧‧‧ (transparent conductive layer 403) second extension

403c‧‧‧ (transparent conductive layer 403) fourth extension

403'‧‧‧Transparent conductive layer

404‧‧‧First electrode

405‧‧‧second electrode

406‧‧‧Permanent substrate

407‧‧‧Insulation

408‧‧‧ joint layer

462‧‧‧Transparent substrate

PP’‧‧‧ Plane

500‧‧‧Lighting device

501, 502, 503‧‧‧Lighting elements

501a, 501b‧‧‧electrode

502a, 502b‧‧‧ electrodes

503a, 503b‧‧‧electrode

510‧‧‧subcarriers (sub-mount)

511, 512, 513, 514‧‧‧ circuits

601‧‧‧Lighting laminate

601a‧‧‧First electrical semiconductor layer

601b‧‧‧active layer

601c‧‧‧second electrical semiconductor layer

603‧‧‧Transparent conductive layer

604‧‧‧Contact layer

604'‧‧‧First electrode

604"‧‧‧second electrode

604a‧‧‧Contact layer removal area

One end of 605‧‧‧ (conductive layer 686)

606‧‧‧Transparent substrate

607‧‧‧Transparent bonding material

611‧‧‧Substrate

659‧‧‧protection layer

681‧‧‧Intermediate structure

682‧‧‧temporary substrate

683‧‧‧Materials

684‧‧ ‧isolate area

685‧‧‧Insulation

685a‧‧‧Electrical connection area

686‧‧‧ Conductive layer

701‧‧‧Lighting laminate

701a‧‧‧First electrical semiconductor layer

701b‧‧‧active layer

701c‧‧‧second electrical semiconductor layer

703‧‧‧Transparent conductive layer

704‧‧‧Contact layer

One end of 705‧‧‧ (conductive layer 686)

706‧‧‧Transparent substrate

707‧‧‧Transparent bonding material

759‧‧‧Protective layer

781‧‧‧Intermediate structure

785‧‧‧Insulation

786‧‧‧ Conductive layer

Figure 1A: Schematic view of a prior art light emitting diode

Figure 1B: side view of a prior art light emitting diode

2A to 2F are diagrams showing a method and structure for forming a light-emitting diode according to a first embodiment of the present invention;

3A to 3E are views showing a method and structure for forming a light-emitting diode according to a second embodiment of the present invention;

4A to 4D are diagrams showing a method and structure for forming a light-emitting diode according to a third embodiment of the present invention;

FIG. 5 is a schematic diagram showing a light-emitting device formed by using the light-emitting diode of the embodiment of the invention

6A to 6I are diagrams showing a method and structure for forming a light-emitting diode according to a fourth embodiment of the present invention;

Figure 7 is a diagram showing the structure of a light-emitting diode according to a fifth embodiment of the present invention

no

400‧‧‧Lighting elements

401‧‧‧Lighting laminate

402‧‧‧ Conductive layer

402a‧‧‧ (the conductive layer 402) first overlap

402b‧‧‧ (the conductive layer 402) first extension

402c‧‧‧ (the conductive layer 402) third extension

403‧‧‧Transparent conductive layer

403a‧‧‧ (the transparent conductive layer 403) second overlap

403b‧‧‧ (transparent conductive layer 403) second extension

403c‧‧‧ (transparent conductive layer 403) fourth extension

403'‧‧‧Transparent conductive layer

404‧‧‧First electrode

405‧‧‧second electrode

406‧‧‧Permanent substrate

407‧‧‧Insulation

408‧‧‧ joint layer

462‧‧‧Transparent substrate

PP’‧‧‧ Plane

Claims (10)

A method of manufacturing a light-emitting device, comprising: providing a substrate; forming a conductive layer on the substrate; providing a light-emitting layer on the substrate and electrically connecting the conductive layer, wherein the light-emitting layer has a first electrical semiconductor layer a second electrical semiconductor layer, and an active layer between the first electrical semiconductor layer and the second electrical semiconductor layer, wherein the first electrical semiconductor layer, the active layer, and the second The semiconductor layer is stacked along a stacking direction; a transparent conductive layer is formed on the light emitting layer; a first electrode is formed to be in contact with the conductive layer; and a second electrode is formed on the transparent conductive layer; An electrode does not overlap the light emitting stack in the stacking direction. The method of claim 1, further comprising forming an insulating layer between the light emitting laminate and the second electrode. The method of claim 1, wherein the first electrode and the substrate are on the same side of the conductive layer, and the second electrode and the light emitting layer are on the same side of the transparent conductive layer. The method of claim 1, wherein the first electrode or the second electrode has a thickness greater than the light-emitting laminate. The method of claim 1, further comprising forming a bonding layer on the light emitting layer to bond the light emitting layer and the conductive layer. The method of claim 5, wherein the bonding layer comprises a metal. The method of claim 1, wherein the second electrode does not overlap the light emitting laminate in the stacking direction. The method of claim 1, wherein the first electrode and the second electrode are not higher than a top surface of the light emitting laminate from the direction of the substrate toward the light emitting laminate. The method of claim 1, wherein the conductive layer comprises a first overlap portion overlapping the light-emitting layer stack and a first extension portion not overlapping the light-emitting layer stack, and the transparent conductive layer comprises A second overlapping portion overlapping the light emitting laminate and a second extending portion not overlapping the light emitting laminate. The method of claim 9, wherein the portion of the first extension portion and the second extension portion do not overlap in the stacking direction.