KR20010088340A - 정전기 방전으로부터 레티클을 격리시키는 방법 - Google Patents
정전기 방전으로부터 레티클을 격리시키는 방법 Download PDFInfo
- Publication number
- KR20010088340A KR20010088340A KR1020010007949A KR20010007949A KR20010088340A KR 20010088340 A KR20010088340 A KR 20010088340A KR 1020010007949 A KR1020010007949 A KR 1020010007949A KR 20010007949 A KR20010007949 A KR 20010007949A KR 20010088340 A KR20010088340 A KR 20010088340A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- light blocking
- blocking material
- integrated circuit
- discontinuity
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52367900A | 2000-03-10 | 2000-03-10 | |
US09/523,679 | 2000-03-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20010088340A true KR20010088340A (ko) | 2001-09-26 |
Family
ID=24085981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010007949A KR20010088340A (ko) | 2000-03-10 | 2001-02-17 | 정전기 방전으로부터 레티클을 격리시키는 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2001272768A (zh) |
KR (1) | KR20010088340A (zh) |
CN (1) | CN1319783A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100422907B1 (ko) * | 2002-05-02 | 2004-03-12 | 아남반도체 주식회사 | 정전기 방지 모듈을 갖는 마스크 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009086385A (ja) * | 2007-09-29 | 2009-04-23 | Hoya Corp | フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法 |
KR101652803B1 (ko) * | 2014-08-27 | 2016-09-01 | (주)마이크로이미지 | 정전기 배출 구조를 가지는 크롬 마스크 |
CN109031883A (zh) * | 2018-08-23 | 2018-12-18 | 苏州瑞而美光电科技有限公司 | 一种报废光刻掩膜版的回收处理方法 |
KR20200088543A (ko) | 2019-01-14 | 2020-07-23 | 삼성전자주식회사 | 포토 마스크, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
WO2020147059A1 (en) * | 2019-01-17 | 2020-07-23 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293244A (ja) * | 1986-06-13 | 1987-12-19 | Hitachi Ltd | 帯電防止フオトマスク基板 |
KR19980043419A (ko) * | 1996-12-03 | 1998-09-05 | 문정환 | 마스크 구조 |
US5989754A (en) * | 1997-09-05 | 1999-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD) |
KR20000000240U (ko) * | 1998-06-05 | 2000-01-15 | 김영환 | 이에스디(esd) 방지기능을 갖는 포토 마스크 |
-
2001
- 2001-02-17 KR KR1020010007949A patent/KR20010088340A/ko not_active Application Discontinuation
- 2001-03-08 JP JP2001065515A patent/JP2001272768A/ja active Pending
- 2001-03-09 CN CN01111225A patent/CN1319783A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293244A (ja) * | 1986-06-13 | 1987-12-19 | Hitachi Ltd | 帯電防止フオトマスク基板 |
KR19980043419A (ko) * | 1996-12-03 | 1998-09-05 | 문정환 | 마스크 구조 |
US5989754A (en) * | 1997-09-05 | 1999-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD) |
KR20000000240U (ko) * | 1998-06-05 | 2000-01-15 | 김영환 | 이에스디(esd) 방지기능을 갖는 포토 마스크 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100422907B1 (ko) * | 2002-05-02 | 2004-03-12 | 아남반도체 주식회사 | 정전기 방지 모듈을 갖는 마스크 |
Also Published As
Publication number | Publication date |
---|---|
CN1319783A (zh) | 2001-10-31 |
JP2001272768A (ja) | 2001-10-05 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |