KR20010073044A - 루테늄 실리사이드 확산 방지층 및 이의 제조방법 - Google Patents

루테늄 실리사이드 확산 방지층 및 이의 제조방법 Download PDF

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Publication number
KR20010073044A
KR20010073044A KR1020017002545A KR20017002545A KR20010073044A KR 20010073044 A KR20010073044 A KR 20010073044A KR 1020017002545 A KR1020017002545 A KR 1020017002545A KR 20017002545 A KR20017002545 A KR 20017002545A KR 20010073044 A KR20010073044 A KR 20010073044A
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KR
South Korea
Prior art keywords
layer
rusi
diffusion barrier
barrier layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020017002545A
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English (en)
Korean (ko)
Inventor
브라이언 에이. 바아트스트라
유진 피. 마르쉬
Original Assignee
마이크론 테크놀로지 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 마이크론 테크놀로지 인코포레이티드 filed Critical 마이크론 테크놀로지 인코포레이티드
Publication of KR20010073044A publication Critical patent/KR20010073044A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H10D64/01125—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides the silicides being formed by chemical reaction with the semiconductor after the contact hole formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
KR1020017002545A 1998-08-27 1999-08-10 루테늄 실리사이드 확산 방지층 및 이의 제조방법 Ceased KR20010073044A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/141,240 1998-08-27
US09/141,240 US6197628B1 (en) 1998-08-27 1998-08-27 Ruthenium silicide diffusion barrier layers and methods of forming same
PCT/US1999/018114 WO2000013215A1 (en) 1998-08-27 1999-08-10 Ruthenium silicide diffusion barrier layers and methods of forming same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020057003945A Division KR20050048625A (ko) 1998-08-27 1999-08-10 루테늄 실리사이드 확산 방지층

Publications (1)

Publication Number Publication Date
KR20010073044A true KR20010073044A (ko) 2001-07-31

Family

ID=22494815

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020017002545A Ceased KR20010073044A (ko) 1998-08-27 1999-08-10 루테늄 실리사이드 확산 방지층 및 이의 제조방법
KR1020057003945A Ceased KR20050048625A (ko) 1998-08-27 1999-08-10 루테늄 실리사이드 확산 방지층

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020057003945A Ceased KR20050048625A (ko) 1998-08-27 1999-08-10 루테늄 실리사이드 확산 방지층

Country Status (10)

Country Link
US (3) US6197628B1 (https=)
EP (1) EP1114449B1 (https=)
JP (1) JP4719358B2 (https=)
KR (2) KR20010073044A (https=)
AT (1) ATE426915T1 (https=)
AU (1) AU5346799A (https=)
DE (1) DE69940640D1 (https=)
MY (1) MY132400A (https=)
TW (1) TW436957B (https=)
WO (1) WO2000013215A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
JP4719358B2 (ja) 2011-07-06
DE69940640D1 (de) 2009-05-07
ATE426915T1 (de) 2009-04-15
US8461682B2 (en) 2013-06-11
EP1114449A1 (en) 2001-07-11
TW436957B (en) 2001-05-28
US6197628B1 (en) 2001-03-06
JP2002524847A (ja) 2002-08-06
US7560815B1 (en) 2009-07-14
US20090278232A1 (en) 2009-11-12
AU5346799A (en) 2000-03-21
MY132400A (en) 2007-10-31
KR20050048625A (ko) 2005-05-24
EP1114449B1 (en) 2009-03-25
WO2000013215A1 (en) 2000-03-09

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