KR20010070295A - 고주파 전력 증폭 모듈 및 무선 통신 장치 - Google Patents

고주파 전력 증폭 모듈 및 무선 통신 장치 Download PDF

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Publication number
KR20010070295A
KR20010070295A KR1020000075430A KR20000075430A KR20010070295A KR 20010070295 A KR20010070295 A KR 20010070295A KR 1020000075430 A KR1020000075430 A KR 1020000075430A KR 20000075430 A KR20000075430 A KR 20000075430A KR 20010070295 A KR20010070295 A KR 20010070295A
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KR
South Korea
Prior art keywords
gate
high frequency
frequency power
signal
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020000075430A
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English (en)
Korean (ko)
Inventor
누마나미마사히또
아까미네히또시
시부야쯔요시
아다찌데쯔아끼
모리까와마사또시
누노가와야스히로
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
오기소 나쯔키
히타치 토부 세미콘덕터 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쓰토무, 가부시키가이샤 히타치세이사쿠쇼, 오기소 나쯔키, 히타치 토부 세미콘덕터 가부시키가이샤 filed Critical 가나이 쓰토무
Publication of KR20010070295A publication Critical patent/KR20010070295A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/045—Circuits with power amplifiers with means for improving efficiency
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
KR1020000075430A 1999-12-13 2000-12-12 고주파 전력 증폭 모듈 및 무선 통신 장치 Ceased KR20010070295A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-353355 1999-12-13
JP35335599A JP2001168647A (ja) 1999-12-13 1999-12-13 高周波電力増幅モジュール及び無線通信装置

Publications (1)

Publication Number Publication Date
KR20010070295A true KR20010070295A (ko) 2001-07-25

Family

ID=18430283

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000075430A Ceased KR20010070295A (ko) 1999-12-13 2000-12-12 고주파 전력 증폭 모듈 및 무선 통신 장치

Country Status (4)

Country Link
US (4) US6433639B1 (enExample)
JP (1) JP2001168647A (enExample)
KR (1) KR20010070295A (enExample)
TW (2) TWI242859B (enExample)

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JP4064620B2 (ja) * 2000-11-30 2008-03-19 シャープ株式会社 ケーブルモデム用チューナ
GB0107264D0 (en) * 2001-03-22 2001-05-16 Nokia Networks Oy Processing signals in a transmitter
DE10123395A1 (de) * 2001-05-14 2002-11-28 Infineon Technologies Ag Schaltungsanordnung mit kaskadierten Feldeffekttransistoren
US7116173B2 (en) 2002-02-28 2006-10-03 Renesas Technology Corp. High-frequency power amplifier circuit and electronic part for communication
JP2003298360A (ja) * 2002-03-29 2003-10-17 Hitachi Ltd 高周波増幅器
US6937101B2 (en) * 2002-04-30 2005-08-30 Skyworks Solutions, Inc. Dual mode power amplifier having a common controller
US6756852B2 (en) * 2002-09-05 2004-06-29 Gatax Technology Co., Ltd. Method for reducing output noise of a power amplifier
US7139538B2 (en) * 2002-09-05 2006-11-21 Renesas Technology Corp. Electronic component for amplifying high frequency power and radio communication system
JP2004146403A (ja) * 2002-10-21 2004-05-20 Advantest Corp 伝送回路、ｃｍｏｓ半導体デバイス、及び設計方法
DE10261388B4 (de) * 2002-12-30 2012-03-01 Infineon Technologies Ag Schaltung zur Arbeitspunkteinstellung von Mehrfach-Gate-Feldeffekttransistoren
JP4245391B2 (ja) * 2003-03-27 2009-03-25 株式会社ルネサステクノロジ 無線通信システムおよび通信用半導体集積回路
JP2004328555A (ja) * 2003-04-28 2004-11-18 Renesas Technology Corp 高周波電力増幅用電子部品および無線通信システム
US7010057B2 (en) * 2003-09-04 2006-03-07 Nokia Corporation Dual mode multi-slot EGPRS transmitter
US7304539B2 (en) * 2003-10-16 2007-12-04 Renesas Technology Corporation High frequency power amplifier circuit and electronic component for high frequency power amplifier
US7177370B2 (en) * 2003-12-17 2007-02-13 Triquint Semiconductor, Inc. Method and architecture for dual-mode linear and saturated power amplifier operation
US7358816B2 (en) * 2004-11-11 2008-04-15 Samsung Electronics Co., Ltd. Variable gain amplifier
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US7164319B2 (en) 2005-04-29 2007-01-16 Triquint Semiconductor, Inc. Power amplifier with multi mode gain circuit
US7834591B2 (en) * 2006-02-16 2010-11-16 Summit Microelectronics, Inc. Switching battery charging systems and methods
US7880445B2 (en) 2006-02-16 2011-02-01 Summit Microelectronics, Inc. System and method of charging a battery using a switching regulator
US7342456B2 (en) * 2006-04-19 2008-03-11 Northrop Grumman Corporation DC-bias network for a distributed amplifier
JP4614238B2 (ja) 2006-07-14 2011-01-19 ルネサスエレクトロニクス株式会社 Ｒｆ電力増幅装置
US8160518B2 (en) * 2006-08-10 2012-04-17 Freescale Semiconductor, Inc. Multi-mode transceiver having tunable harmonic termination circuit and method therefor
WO2008076822A2 (en) * 2006-12-15 2008-06-26 Lehigh University Adaptive bias technique for field effect transistor
CN101114860B (zh) 2007-08-17 2011-04-06 华为技术有限公司 一种控制功率放大的方法及装置
US7545297B2 (en) * 2007-08-29 2009-06-09 International Business Machines Corporation Digital-to-analog converter using dual-gate transistors
US7545298B2 (en) * 2007-08-29 2009-06-09 International Business Machines Corporation Design structure for a digital-to-analog converter using dual-gate transistors
US20090191821A1 (en) * 2008-01-25 2009-07-30 Spyridon Charalabos Kavadias Method and system for transmit path filter and mixer co-design
US7910991B2 (en) * 2008-03-31 2011-03-22 Freescale Semiconductor, Inc. Dual gate lateral diffused MOS transistor
JP4511612B2 (ja) * 2008-06-17 2010-07-28 アルプス電気株式会社 Ａｇｃ回路
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JP5483581B2 (ja) 2010-07-20 2014-05-07 住友電工デバイス・イノベーション株式会社 ドハティ増幅器および半導体装置
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Also Published As

Publication number Publication date
TW200509547A (en) 2005-03-01
US20040012445A1 (en) 2004-01-22
TWI250726B (en) 2006-03-01
US7145394B2 (en) 2006-12-05
TWI242859B (en) 2005-11-01
US6617927B2 (en) 2003-09-09
US20050208905A1 (en) 2005-09-22
US6897728B2 (en) 2005-05-24
US20020109549A1 (en) 2002-08-15
US6433639B1 (en) 2002-08-13
JP2001168647A (ja) 2001-06-22

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