KR20010024685A - 다이아몬드납땜법 및 질화티타늄을 이용하는 폴리싱패드의조정방법 및 장치 - Google Patents
다이아몬드납땜법 및 질화티타늄을 이용하는 폴리싱패드의조정방법 및 장치 Download PDFInfo
- Publication number
- KR20010024685A KR20010024685A KR1020007006095A KR20007006095A KR20010024685A KR 20010024685 A KR20010024685 A KR 20010024685A KR 1020007006095 A KR1020007006095 A KR 1020007006095A KR 20007006095 A KR20007006095 A KR 20007006095A KR 20010024685 A KR20010024685 A KR 20010024685A
- Authority
- KR
- South Korea
- Prior art keywords
- cutting element
- conditioning
- polishing pad
- ring
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 144
- 230000003750 conditioning effect Effects 0.000 title claims abstract description 91
- 239000010432 diamond Substances 0.000 title claims abstract description 57
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 55
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000005520 cutting process Methods 0.000 claims abstract description 171
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 238000000576 coating method Methods 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 22
- 238000005476 soldering Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 88
- 238000012546 transfer Methods 0.000 description 14
- 238000011065 in-situ storage Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000005304 joining Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 239000008199 coating composition Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4981—Utilizing transitory attached element or associated separate material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49888—Subsequently coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49982—Coating
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/984,243 US6371838B1 (en) | 1996-07-15 | 1997-12-03 | Polishing pad conditioning device with cutting elements |
US08/984,243 | 1997-12-03 | ||
PCT/US1998/024960 WO1999028084A1 (fr) | 1997-12-03 | 1998-11-20 | Procede et dispositif de conditionnement de tampons a polir utilisant la technologie du brasage au diamant associee a du nitrure de titane |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20010024685A true KR20010024685A (ko) | 2001-03-26 |
Family
ID=25530409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007006095A KR20010024685A (ko) | 1997-12-03 | 1998-11-20 | 다이아몬드납땜법 및 질화티타늄을 이용하는 폴리싱패드의조정방법 및 장치 |
Country Status (6)
Country | Link |
---|---|
US (4) | US6371838B1 (fr) |
EP (1) | EP1035946A1 (fr) |
JP (3) | JP2001524396A (fr) |
KR (1) | KR20010024685A (fr) |
TW (1) | TW411293B (fr) |
WO (1) | WO1999028084A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100430581B1 (ko) * | 2001-12-11 | 2004-05-10 | 동부전자 주식회사 | Cmp 장치의 상부링 |
KR100468111B1 (ko) * | 2002-07-09 | 2005-01-26 | 삼성전자주식회사 | 연마 패드 컨디셔너 및 이를 갖는 화학적 기계적 연마 장치 |
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US9199357B2 (en) | 1997-04-04 | 2015-12-01 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9463552B2 (en) | 1997-04-04 | 2016-10-11 | Chien-Min Sung | Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods |
US9868100B2 (en) | 1997-04-04 | 2018-01-16 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
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US9238207B2 (en) | 1997-04-04 | 2016-01-19 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
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CA2339097C (fr) | 1998-07-31 | 2007-07-31 | Norton Company | Outil de dressage rotatif contenant une couche de diamant brasee |
US6250994B1 (en) | 1998-10-01 | 2001-06-26 | Micron Technology, Inc. | Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads |
US6290584B1 (en) * | 1999-08-13 | 2001-09-18 | Speedfam-Ipec Corporation | Workpiece carrier with segmented and floating retaining elements |
JP2001162532A (ja) * | 1999-09-29 | 2001-06-19 | Toshiba Corp | ドレッサ、研磨装置ならびに物品の製造方法 |
US6447374B1 (en) * | 1999-12-17 | 2002-09-10 | Applied Materials, Inc. | Chemical mechanical planarization system |
US6517424B2 (en) * | 2000-03-10 | 2003-02-11 | Abrasive Technology, Inc. | Protective coatings for CMP conditioning disk |
US6872329B2 (en) | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
US6551176B1 (en) | 2000-10-05 | 2003-04-22 | Applied Materials, Inc. | Pad conditioning disk |
JP2002144218A (ja) * | 2000-11-09 | 2002-05-21 | Ebara Corp | 研磨装置 |
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US6702654B2 (en) * | 2001-02-07 | 2004-03-09 | Agere Systems Inc. | Conditioning wheel for conditioning a semiconductor wafer polishing pad and method of manufacture thereof |
DE10208414B4 (de) * | 2002-02-27 | 2013-01-10 | Advanced Micro Devices, Inc. | Vorrichtung mit einem verbesserten Polierkissenaufbereiter für das chemisch mechanische Polieren |
US6872127B2 (en) * | 2002-07-11 | 2005-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd | Polishing pad conditioning disks for chemical mechanical polisher |
US6852016B2 (en) * | 2002-09-18 | 2005-02-08 | Micron Technology, Inc. | End effectors and methods for manufacturing end effectors with contact elements to condition polishing pads used in polishing micro-device workpieces |
WO2005002742A1 (fr) * | 2003-02-07 | 2005-01-13 | Diamond Innovations, Inc. | Surfaces d'usure d'un equipement a resistance etendue et leurs procedes de fabrication |
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1997
- 1997-12-03 US US08/984,243 patent/US6371838B1/en not_active Expired - Fee Related
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1998
- 1998-11-20 JP JP2000523042A patent/JP2001524396A/ja active Pending
- 1998-11-20 WO PCT/US1998/024960 patent/WO1999028084A1/fr active IP Right Grant
- 1998-11-20 EP EP98958112A patent/EP1035946A1/fr not_active Withdrawn
- 1998-11-20 KR KR1020007006095A patent/KR20010024685A/ko active IP Right Grant
- 1998-11-27 TW TW087119693A patent/TW411293B/zh active
-
1999
- 1999-04-30 US US09/303,483 patent/US6347982B1/en not_active Expired - Fee Related
- 1999-04-30 US US09/303,463 patent/US6347981B1/en not_active Expired - Fee Related
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2000
- 2000-08-21 US US09/642,954 patent/US6350184B1/en not_active Expired - Fee Related
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2003
- 2003-05-06 JP JP2003128312A patent/JP2004001212A/ja active Pending
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100430581B1 (ko) * | 2001-12-11 | 2004-05-10 | 동부전자 주식회사 | Cmp 장치의 상부링 |
KR100468111B1 (ko) * | 2002-07-09 | 2005-01-26 | 삼성전자주식회사 | 연마 패드 컨디셔너 및 이를 갖는 화학적 기계적 연마 장치 |
Also Published As
Publication number | Publication date |
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US6371838B1 (en) | 2002-04-16 |
US6347981B1 (en) | 2002-02-19 |
JP2001524396A (ja) | 2001-12-04 |
TW411293B (en) | 2000-11-11 |
JP2009072908A (ja) | 2009-04-09 |
US6347982B1 (en) | 2002-02-19 |
JP2004001212A (ja) | 2004-01-08 |
WO1999028084A1 (fr) | 1999-06-10 |
US6350184B1 (en) | 2002-02-26 |
EP1035946A1 (fr) | 2000-09-20 |
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