KR20010013022A - 전자방출장치 및 그의 제조방법 - Google Patents

전자방출장치 및 그의 제조방법 Download PDF

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Publication number
KR20010013022A
KR20010013022A KR19997010997A KR19997010997A KR20010013022A KR 20010013022 A KR20010013022 A KR 20010013022A KR 19997010997 A KR19997010997 A KR 19997010997A KR 19997010997 A KR19997010997 A KR 19997010997A KR 20010013022 A KR20010013022 A KR 20010013022A
Authority
KR
South Korea
Prior art keywords
electrode
base layer
emitter
opening
emitter electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR19997010997A
Other languages
English (en)
Korean (ko)
Inventor
스핀트크리스토퍼제이.
오베르그스테파니제이.
헤이븐듀안에이.
바톤로거더블유.
레언아더제이.
바스콤빅토리아에이.
Original Assignee
캔디센트 테크날러지스 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캔디센트 테크날러지스 코퍼레이션 filed Critical 캔디센트 테크날러지스 코퍼레이션
Publication of KR20010013022A publication Critical patent/KR20010013022A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02Electron-emitting electrodes; Cathodes
    • H01J19/24Cold cathodes, e.g. field-emissive cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
KR19997010997A 1997-05-30 1998-05-26 전자방출장치 및 그의 제조방법 Abandoned KR20010013022A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/866,150 1997-05-30
US08/866,150 US6002199A (en) 1997-05-30 1997-05-30 Structure and fabrication of electron-emitting device having ladder-like emitter electrode
PCT/US1998/009907 WO1998054741A1 (en) 1997-05-30 1998-05-26 Structure and fabrication of electron-emitting device having ladder-like emitter electrode

Publications (1)

Publication Number Publication Date
KR20010013022A true KR20010013022A (ko) 2001-02-26

Family

ID=25347028

Family Applications (1)

Application Number Title Priority Date Filing Date
KR19997010997A Abandoned KR20010013022A (ko) 1997-05-30 1998-05-26 전자방출장치 및 그의 제조방법

Country Status (6)

Country Link
US (4) US6002199A (enExample)
EP (1) EP0985220B1 (enExample)
JP (1) JP4234794B2 (enExample)
KR (1) KR20010013022A (enExample)
DE (1) DE69835013T2 (enExample)
WO (1) WO1998054741A1 (enExample)

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US6190223B1 (en) * 1998-07-02 2001-02-20 Micron Technology, Inc. Method of manufacture of composite self-aligned extraction grid and in-plane focusing ring
US6822386B2 (en) * 1999-03-01 2004-11-23 Micron Technology, Inc. Field emitter display assembly having resistor layer
US6235179B1 (en) * 1999-05-12 2001-05-22 Candescent Technologies Corporation Electroplated structure for a flat panel display device
US6641933B1 (en) 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
KR100464314B1 (ko) * 2000-01-05 2004-12-31 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
US6596146B1 (en) * 2000-05-12 2003-07-22 Candescent Technologies Corporation Electroplated structure for a flat panel display device
US7064500B2 (en) * 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6545425B2 (en) 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
EP1258915A1 (en) * 2001-05-17 2002-11-20 Infineon Technologies SC300 GmbH & Co. KG Method of detecting defects on a semiconductor device in a processing tool and an arrangement therefore
US6406926B1 (en) * 2001-08-15 2002-06-18 Motorola, Inc. Method of forming a vacuum micro-electronic device
US6879097B2 (en) * 2001-09-28 2005-04-12 Candescent Technologies Corporation Flat-panel display containing electron-emissive regions of non-uniform spacing or/and multi-part lateral configuration
US6734620B2 (en) * 2001-12-12 2004-05-11 Candescent Technologies Corporation Structure, fabrication, and corrective test of electron-emitting device having electrode configured to reduce cross-over capacitance and/or facilitate short-circuit repair
KR20050014430A (ko) * 2003-07-31 2005-02-07 삼성에스디아이 주식회사 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원
KR20050058617A (ko) * 2003-12-12 2005-06-17 삼성에스디아이 주식회사 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법
KR20050086238A (ko) * 2004-02-25 2005-08-30 삼성에스디아이 주식회사 전계 방출 표시장치
KR20050104562A (ko) * 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출 표시장치
US7235745B2 (en) * 2005-01-10 2007-06-26 Endicott Interconnect Technologies, Inc. Resistor material with metal component for use in circuitized substrates, circuitized substrate utilizing same, method of making said ciruitized substrate, and information handling system utilizing said ciruitized substrate
KR20060104652A (ko) * 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
KR20060104657A (ko) * 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
KR20060124332A (ko) * 2005-05-31 2006-12-05 삼성에스디아이 주식회사 전자 방출 소자
KR20070046663A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 전자 방출 표시 디바이스
US8421275B2 (en) * 2009-11-19 2013-04-16 Electrolux Home Products, Inc. Apparatus for providing zero standby power control in an appliance
JP5331041B2 (ja) * 2010-03-30 2013-10-30 日本放送協会 電子放出源アレイ、撮像装置、及び表示装置
KR102076380B1 (ko) * 2012-03-16 2020-02-11 나녹스 이미징 피엘씨 전자 방출 구조체를 갖는 장치

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US4178531A (en) * 1977-06-15 1979-12-11 Rca Corporation CRT with field-emission cathode
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US4874981A (en) * 1988-05-10 1989-10-17 Sri International Automatically focusing field emission electrode
FR2641412B1 (fr) * 1988-12-30 1991-02-15 Thomson Tubes Electroniques Source d'electrons du type a emission de champ
NL8901075A (nl) * 1989-04-28 1990-11-16 Philips Nv Inrichting ten behoeve van elektronengeneratie en weergeefinrichting.
US5235244A (en) * 1990-01-29 1993-08-10 Innovative Display Development Partners Automatically collimating electron beam producing arrangement
FR2669465B1 (fr) * 1990-11-16 1996-07-12 Thomson Rech Source d'electrons et procede de realisation.
US5191217A (en) * 1991-11-25 1993-03-02 Motorola, Inc. Method and apparatus for field emission device electrostatic electron beam focussing
US5418094A (en) * 1991-12-17 1995-05-23 Fuji Photo Film Co., Ltd. Method for forming a light shielding pattern
US5477105A (en) * 1992-04-10 1995-12-19 Silicon Video Corporation Structure of light-emitting device with raised black matrix for use in optical devices such as flat-panel cathode-ray tubes
US5374868A (en) * 1992-09-11 1994-12-20 Micron Display Technology, Inc. Method for formation of a trench accessible cold-cathode field emission device
CA2112733C (en) * 1993-01-07 1999-03-30 Naoto Nakamura Electron beam-generating apparatus, image-forming apparatus, and driving methods thereof
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5528103A (en) * 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5569975A (en) * 1994-11-18 1996-10-29 Texas Instruments Incorporated Cluster arrangement of field emission microtips
US5543683A (en) * 1994-11-21 1996-08-06 Silicon Video Corporation Faceplate for field emission display including wall gripper structures
WO1996016429A2 (en) * 1994-11-21 1996-05-30 Candescent Technologies Corporation Field emission device with internal structure for aligning phosphor pixels with corresponding field emitters
US5650690A (en) * 1994-11-21 1997-07-22 Candescent Technologies, Inc. Backplate of field emission device with self aligned focus structure and spacer wall locators
US5578225A (en) * 1995-01-19 1996-11-26 Industrial Technology Research Institute Inversion-type FED method
US5631518A (en) 1995-05-02 1997-05-20 Motorola Electron source having short-avoiding extraction electrode and method of making same
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
US6046539A (en) * 1997-04-29 2000-04-04 Candescent Technologies Corporation Use of sacrificial masking layer and backside exposure in forming openings that typically receive light-emissive material
US5920151A (en) * 1997-05-30 1999-07-06 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor

Also Published As

Publication number Publication date
JP4234794B2 (ja) 2009-03-04
WO1998054741A1 (en) 1998-12-03
EP0985220A1 (en) 2000-03-15
JP2002508879A (ja) 2002-03-19
US6338662B1 (en) 2002-01-15
EP0985220B1 (en) 2006-06-21
US6002199A (en) 1999-12-14
US6146226A (en) 2000-11-14
DE69835013T2 (de) 2007-01-11
DE69835013D1 (de) 2006-08-03
EP0985220A4 (en) 2002-11-27
US6201343B1 (en) 2001-03-13

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PA0105 International application

Patent event date: 19991126

Patent event code: PA01051R01D

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Patent event code: PA02012R01D

Patent event date: 20000324

Comment text: Request for Examination of Application

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PN2301 Change of applicant

Patent event date: 20011015

Comment text: Notification of Change of Applicant

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PE0902 Notice of grounds for rejection

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Patent event date: 20011128

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20021230

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee