DE69835013T2 - Herstellung einer elektronenemittierenden vorrichtung mit leiterähnlicher emitterelektrode - Google Patents
Herstellung einer elektronenemittierenden vorrichtung mit leiterähnlicher emitterelektrode Download PDFInfo
- Publication number
- DE69835013T2 DE69835013T2 DE69835013T DE69835013T DE69835013T2 DE 69835013 T2 DE69835013 T2 DE 69835013T2 DE 69835013 T DE69835013 T DE 69835013T DE 69835013 T DE69835013 T DE 69835013T DE 69835013 T2 DE69835013 T2 DE 69835013T2
- Authority
- DE
- Germany
- Prior art keywords
- focusing
- emitter
- electrodes
- electron
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- -1 graphite Chemical compound 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/02—Electron-emitting electrodes; Cathodes
- H01J19/24—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US866150 | 1992-04-09 | ||
| US08/866,150 US6002199A (en) | 1997-05-30 | 1997-05-30 | Structure and fabrication of electron-emitting device having ladder-like emitter electrode |
| PCT/US1998/009907 WO1998054741A1 (en) | 1997-05-30 | 1998-05-26 | Structure and fabrication of electron-emitting device having ladder-like emitter electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69835013D1 DE69835013D1 (de) | 2006-08-03 |
| DE69835013T2 true DE69835013T2 (de) | 2007-01-11 |
Family
ID=25347028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69835013T Expired - Lifetime DE69835013T2 (de) | 1997-05-30 | 1998-05-26 | Herstellung einer elektronenemittierenden vorrichtung mit leiterähnlicher emitterelektrode |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US6002199A (enExample) |
| EP (1) | EP0985220B1 (enExample) |
| JP (1) | JP4234794B2 (enExample) |
| KR (1) | KR20010013022A (enExample) |
| DE (1) | DE69835013T2 (enExample) |
| WO (1) | WO1998054741A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6049165A (en) | 1996-07-17 | 2000-04-11 | Candescent Technologies Corporation | Structure and fabrication of flat panel display with specially arranged spacer |
| US6176754B1 (en) * | 1998-05-29 | 2001-01-23 | Candescent Technologies Corporation | Method for forming a conductive focus waffle |
| US6190223B1 (en) * | 1998-07-02 | 2001-02-20 | Micron Technology, Inc. | Method of manufacture of composite self-aligned extraction grid and in-plane focusing ring |
| US6822386B2 (en) * | 1999-03-01 | 2004-11-23 | Micron Technology, Inc. | Field emitter display assembly having resistor layer |
| US6235179B1 (en) * | 1999-05-12 | 2001-05-22 | Candescent Technologies Corporation | Electroplated structure for a flat panel display device |
| US6641933B1 (en) | 1999-09-24 | 2003-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting EL display device |
| KR100464314B1 (ko) * | 2000-01-05 | 2004-12-31 | 삼성에스디아이 주식회사 | 전계방출소자 및 그 제조방법 |
| KR20010082831A (ko) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | 액정표시장치의 제조방법 |
| US6596146B1 (en) * | 2000-05-12 | 2003-07-22 | Candescent Technologies Corporation | Electroplated structure for a flat panel display device |
| US7064500B2 (en) * | 2000-05-26 | 2006-06-20 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
| US6800877B2 (en) * | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
| US6407516B1 (en) | 2000-05-26 | 2002-06-18 | Exaconnect Inc. | Free space electron switch |
| US6545425B2 (en) | 2000-05-26 | 2003-04-08 | Exaconnect Corp. | Use of a free space electron switch in a telecommunications network |
| US6801002B2 (en) * | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Use of a free space electron switch in a telecommunications network |
| EP1258915A1 (en) * | 2001-05-17 | 2002-11-20 | Infineon Technologies SC300 GmbH & Co. KG | Method of detecting defects on a semiconductor device in a processing tool and an arrangement therefore |
| US6406926B1 (en) * | 2001-08-15 | 2002-06-18 | Motorola, Inc. | Method of forming a vacuum micro-electronic device |
| US6879097B2 (en) * | 2001-09-28 | 2005-04-12 | Candescent Technologies Corporation | Flat-panel display containing electron-emissive regions of non-uniform spacing or/and multi-part lateral configuration |
| US6734620B2 (en) * | 2001-12-12 | 2004-05-11 | Candescent Technologies Corporation | Structure, fabrication, and corrective test of electron-emitting device having electrode configured to reduce cross-over capacitance and/or facilitate short-circuit repair |
| KR20050014430A (ko) * | 2003-07-31 | 2005-02-07 | 삼성에스디아이 주식회사 | 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원 |
| KR20050058617A (ko) * | 2003-12-12 | 2005-06-17 | 삼성에스디아이 주식회사 | 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법 |
| KR20050086238A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 전계 방출 표시장치 |
| KR20050104562A (ko) * | 2004-04-29 | 2005-11-03 | 삼성에스디아이 주식회사 | 전자 방출 표시장치 |
| US7235745B2 (en) * | 2005-01-10 | 2007-06-26 | Endicott Interconnect Technologies, Inc. | Resistor material with metal component for use in circuitized substrates, circuitized substrate utilizing same, method of making said ciruitized substrate, and information handling system utilizing said ciruitized substrate |
| KR20060104652A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
| KR20060104657A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
| KR20060124332A (ko) * | 2005-05-31 | 2006-12-05 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
| KR20070046663A (ko) * | 2005-10-31 | 2007-05-03 | 삼성에스디아이 주식회사 | 전자 방출 표시 디바이스 |
| US8421275B2 (en) * | 2009-11-19 | 2013-04-16 | Electrolux Home Products, Inc. | Apparatus for providing zero standby power control in an appliance |
| JP5331041B2 (ja) * | 2010-03-30 | 2013-10-30 | 日本放送協会 | 電子放出源アレイ、撮像装置、及び表示装置 |
| KR102076380B1 (ko) * | 2012-03-16 | 2020-02-11 | 나녹스 이미징 피엘씨 | 전자 방출 구조체를 갖는 장치 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4178531A (en) * | 1977-06-15 | 1979-12-11 | Rca Corporation | CRT with field-emission cathode |
| FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
| US4874981A (en) * | 1988-05-10 | 1989-10-17 | Sri International | Automatically focusing field emission electrode |
| FR2641412B1 (fr) * | 1988-12-30 | 1991-02-15 | Thomson Tubes Electroniques | Source d'electrons du type a emission de champ |
| NL8901075A (nl) * | 1989-04-28 | 1990-11-16 | Philips Nv | Inrichting ten behoeve van elektronengeneratie en weergeefinrichting. |
| US5235244A (en) * | 1990-01-29 | 1993-08-10 | Innovative Display Development Partners | Automatically collimating electron beam producing arrangement |
| FR2669465B1 (fr) * | 1990-11-16 | 1996-07-12 | Thomson Rech | Source d'electrons et procede de realisation. |
| US5191217A (en) * | 1991-11-25 | 1993-03-02 | Motorola, Inc. | Method and apparatus for field emission device electrostatic electron beam focussing |
| US5418094A (en) * | 1991-12-17 | 1995-05-23 | Fuji Photo Film Co., Ltd. | Method for forming a light shielding pattern |
| US5477105A (en) * | 1992-04-10 | 1995-12-19 | Silicon Video Corporation | Structure of light-emitting device with raised black matrix for use in optical devices such as flat-panel cathode-ray tubes |
| US5374868A (en) * | 1992-09-11 | 1994-12-20 | Micron Display Technology, Inc. | Method for formation of a trench accessible cold-cathode field emission device |
| CA2112733C (en) * | 1993-01-07 | 1999-03-30 | Naoto Nakamura | Electron beam-generating apparatus, image-forming apparatus, and driving methods thereof |
| US5564959A (en) * | 1993-09-08 | 1996-10-15 | Silicon Video Corporation | Use of charged-particle tracks in fabricating gated electron-emitting devices |
| US5559389A (en) * | 1993-09-08 | 1996-09-24 | Silicon Video Corporation | Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals |
| US5528103A (en) * | 1994-01-31 | 1996-06-18 | Silicon Video Corporation | Field emitter with focusing ridges situated to sides of gate |
| US5569975A (en) * | 1994-11-18 | 1996-10-29 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips |
| US5543683A (en) * | 1994-11-21 | 1996-08-06 | Silicon Video Corporation | Faceplate for field emission display including wall gripper structures |
| WO1996016429A2 (en) * | 1994-11-21 | 1996-05-30 | Candescent Technologies Corporation | Field emission device with internal structure for aligning phosphor pixels with corresponding field emitters |
| US5650690A (en) * | 1994-11-21 | 1997-07-22 | Candescent Technologies, Inc. | Backplate of field emission device with self aligned focus structure and spacer wall locators |
| US5578225A (en) * | 1995-01-19 | 1996-11-26 | Industrial Technology Research Institute | Inversion-type FED method |
| US5631518A (en) | 1995-05-02 | 1997-05-20 | Motorola | Electron source having short-avoiding extraction electrode and method of making same |
| US5828163A (en) * | 1997-01-13 | 1998-10-27 | Fed Corporation | Field emitter device with a current limiter structure |
| US6046539A (en) * | 1997-04-29 | 2000-04-04 | Candescent Technologies Corporation | Use of sacrificial masking layer and backside exposure in forming openings that typically receive light-emissive material |
| US5920151A (en) * | 1997-05-30 | 1999-07-06 | Candescent Technologies Corporation | Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor |
-
1997
- 1997-05-30 US US08/866,150 patent/US6002199A/en not_active Expired - Lifetime
- 1997-08-28 US US08/919,634 patent/US6201343B1/en not_active Expired - Lifetime
-
1998
- 1998-05-26 EP EP98924767A patent/EP0985220B1/en not_active Expired - Lifetime
- 1998-05-26 KR KR19997010997A patent/KR20010013022A/ko not_active Abandoned
- 1998-05-26 WO PCT/US1998/009907 patent/WO1998054741A1/en not_active Ceased
- 1998-05-26 DE DE69835013T patent/DE69835013T2/de not_active Expired - Lifetime
- 1998-05-27 JP JP50072699A patent/JP4234794B2/ja not_active Expired - Fee Related
-
1999
- 1999-05-28 US US09/322,244 patent/US6146226A/en not_active Expired - Lifetime
-
2000
- 2000-07-27 US US09/626,599 patent/US6338662B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4234794B2 (ja) | 2009-03-04 |
| WO1998054741A1 (en) | 1998-12-03 |
| EP0985220A1 (en) | 2000-03-15 |
| JP2002508879A (ja) | 2002-03-19 |
| US6338662B1 (en) | 2002-01-15 |
| KR20010013022A (ko) | 2001-02-26 |
| EP0985220B1 (en) | 2006-06-21 |
| US6002199A (en) | 1999-12-14 |
| US6146226A (en) | 2000-11-14 |
| DE69835013D1 (de) | 2006-08-03 |
| EP0985220A4 (en) | 2002-11-27 |
| US6201343B1 (en) | 2001-03-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: CANON K.K., TOKYO, JP |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN |