KR20000048749A - 파워 ｍｏｓ 소자 - Google Patents

파워 ｍｏｓ 소자 Download PDF

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Publication number
KR20000048749A
KR20000048749A KR1019990702734A KR19997002734A KR20000048749A KR 20000048749 A KR20000048749 A KR 20000048749A KR 1019990702734 A KR1019990702734 A KR 1019990702734A KR 19997002734 A KR19997002734 A KR 19997002734A KR 20000048749 A KR20000048749 A KR 20000048749A
Authority
KR
South Korea
Prior art keywords
column
power mos
gate
mos device
doped
Prior art date
Application number
KR1019990702734A
Other languages
English (en)
Korean (ko)
Inventor
마르틴 케르버
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR20000048749A publication Critical patent/KR20000048749A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019990702734A 1996-09-30 1997-09-01 파워 ｍｏｓ 소자 KR20000048749A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19640308A DE19640308A1 (de) 1996-09-30 1996-09-30 Leistungs-MOS-Bauelement
DE19640308.1 1996-09-30

Publications (1)

Publication Number Publication Date
KR20000048749A true KR20000048749A (ko) 2000-07-25

Family

ID=7807451

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990702734A KR20000048749A (ko) 1996-09-30 1997-09-01 파워 ｍｏｓ 소자

Country Status (5)

Country Link
EP (1) EP0931354A1 (de)
JP (1) JP2001501372A (de)
KR (1) KR20000048749A (de)
DE (1) DE19640308A1 (de)
WO (1) WO1998015011A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101480077B1 (ko) * 2013-06-26 2015-01-09 경북대학교 산학협력단 반도체 소자 및 그의 제조방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3744513B2 (ja) * 2003-05-30 2006-02-15 トヨタ自動車株式会社 ダイオード
GB0324313D0 (en) * 2003-10-17 2003-11-19 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
JP2007043123A (ja) * 2005-07-01 2007-02-15 Toshiba Corp 半導体装置
JP2008066708A (ja) * 2006-08-09 2008-03-21 Toshiba Corp 半導体装置
GB2572442A (en) * 2018-03-29 2019-10-02 Cambridge Entpr Ltd Power semiconductor device with a double gate structure
JP2020126932A (ja) * 2019-02-05 2020-08-20 トヨタ自動車株式会社 トレンチゲート型半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
JP3219307B2 (ja) * 1991-08-28 2001-10-15 シャープ株式会社 半導体装置の構造および製造方法
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101480077B1 (ko) * 2013-06-26 2015-01-09 경북대학교 산학협력단 반도체 소자 및 그의 제조방법

Also Published As

Publication number Publication date
JP2001501372A (ja) 2001-01-30
WO1998015011A1 (de) 1998-04-09
DE19640308A1 (de) 1998-04-02
EP0931354A1 (de) 1999-07-28

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application
E601 Decision to refuse application