KR19990084312A - Polymer softening method produced during metal etching - Google Patents
Polymer softening method produced during metal etching Download PDFInfo
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- KR19990084312A KR19990084312A KR1019980015964A KR19980015964A KR19990084312A KR 19990084312 A KR19990084312 A KR 19990084312A KR 1019980015964 A KR1019980015964 A KR 1019980015964A KR 19980015964 A KR19980015964 A KR 19980015964A KR 19990084312 A KR19990084312 A KR 19990084312A
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- polymer
- metal
- etching
- forming
- fluorine group
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 45
- 239000002184 metal Substances 0.000 title claims abstract description 45
- 229920000642 polymer Polymers 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005530 etching Methods 0.000 title claims abstract description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 19
- 239000010937 tungsten Substances 0.000 claims abstract description 19
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000009832 plasma treatment Methods 0.000 abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 배선형성시 생성된 폴리머의 연화방법에 관한 것으로서, 특히 텅스텐을 이용한 금속배선 형성시 배선을 패터닝하기 위한 식각 후 H2O 플라즈마 처리를 이용하여 불소기(F-)를 갖고 있는 폴리머를 제거하기 용이하게 하는 반도체장치의 금속식각시 생성된 폴리머의 연화방법에 관한 것이다.The present invention relates to a method for softening a polymer produced during wiring formation. In particular, a polymer having a fluorine group (F − ) is formed by using H 2 O plasma treatment after etching to pattern the wiring during metal wiring formation using tungsten. A method of softening a polymer produced during metal etching of a semiconductor device to facilitate removal thereof.
상기 목적을 달성하기 위한 본 발명에 따른 금속식각시 생성된 폴리머 제거방법은절연막이 형성된 반도체기판 위에 금속층을 형성하는 단계와, 불소기를 갖는 식각제를 이용하여 금속층의 소정 부위를 제거하여 금속패턴을 형성하는 단계와, 금속패턴 표면에 흡착된 불소기를 갖는 폴리머를 H2O 플라즈마 분위기에 노출시키는 단계로 이루어진다.According to the present invention, there is provided a method of removing a polymer generated during metal etching, by forming a metal layer on a semiconductor substrate on which an insulating film is formed, and removing a predetermined portion of the metal layer by using an etchant having a fluorine group. And forming a polymer having a fluorine group adsorbed on the surface of the metal pattern to an H 2 O plasma atmosphere.
Description
본 발명은 배선형성시 생성된 폴리머의 연화방법에 관한 것으로서, 특히 텅스텐을 이용한 금속배선 형성시 배선을 패터닝하기 위한 식각 후 H2O 플라즈마 처리를 이용하여 불소기(F-)를 갖고 있는 폴리머를 제거하기 용이하게 하는 반도체장치의 금속식각시 생성된 폴리머의 연화방법에 관한 것이다.The present invention relates to a method for softening a polymer produced during wiring formation. In particular, a polymer having a fluorine group (F − ) is formed by using H 2 O plasma treatment after etching to pattern the wiring during metal wiring formation using tungsten. A method of softening a polymer produced during metal etching of a semiconductor device to facilitate removal thereof.
종래의 기술로서 반도체장치의 금속식각시 생성된 폴리머의 제거방법은 금속배선형성을 위한 식각시 생성된 폴리머를 제거하기 위하여 식각공정변수를 제어하거나, 잔류한 포토레지스트패턴 제거를 위한 공정시간을 연장 또는 그 공정변수를 제어하거나, 화학용액을 이용한 후처리공정의 변수를 제어하거나 또는 화학제 용액의 종류를 변경한다.As a conventional technique, a method of removing a polymer generated during metal etching of a semiconductor device is used to control an etching process variable to remove a polymer produced during etching for forming metal interconnects, or to extend a process time for removing residual photoresist patterns. Or control the process variable, control the aftertreatment process with chemical solution, or change the type of chemical solution.
도 1은 종래기술에 의해 금속배선 형성을 위한 식각시 생성된 불소기를 포함하며 텅스텐배선의 표면에 흡착되어 있는 폴리머의 개략적인 모습을 나타낸 단면도이다.1 is a cross-sectional view showing a schematic view of a polymer including a fluorine group generated during etching for forming metal wires and adsorbed on a surface of a tungsten wire according to the prior art.
도 1 을 참조하면, 실리콘기판(1) 위에 절연막(2)을 형성한 다음 그 위에 금속배선을 형성하기 위한 금속층으로 텅스텐층 증착 후 그 위에 포토레지스트를 도포한 다음 사진공정을 실시하여 포토레지스트 패턴을 형성한다. 그리고 포토레지스트 패턴으로 보호되지 아니하는 부위의 텅스텐층(3)을 식각하여 제거한다. 이때 사용되는 식각제는 주로 불소기를 갖는 식각제를 사용하는데 이때의 불소기는 포토레지스트 등의 유기물질 또는 텅스텐 등과 결합한 형태의 폴리머(4)를 형성한다. 예를 들면, -Wx-Fy-, -CH2CHF-, -CF2-CF2- 등이다. 이러한 폴리머는 금속배선을 이루는 식각된 텅스텐층(3)의 표면에 흡착된다.Referring to FIG. 1, after forming an insulating film 2 on a silicon substrate 1, depositing a tungsten layer with a metal layer for forming metal wiring thereon, applying a photoresist thereon, and then performing a photolithography process to perform a photoresist pattern. To form. Then, the tungsten layer 3 in the portion not protected by the photoresist pattern is etched and removed. At this time, the etchant used is mainly an etchant having a fluorine group, and the fluorine group forms a polymer 4 in a form in combination with an organic material such as a photoresist or tungsten. For example, -W x -F y- , -CH 2 CHF-, -CF 2 -CF 2 -and the like. These polymers are adsorbed on the surface of the etched tungsten layer 3 forming the metallization.
이와 같이 텅스텐 배선의 표면에 형성된 불소기성 폴리머들은 용이하게 제거되지 아니하고 잔류하여 이후 공정에서 고온처리시 텅스텐과의 열팽창률 차이로 인하여 금속층간절연층(Inter Metal Dielectric) 크랙(crack)을 유발하고 이후, 콘택홀 형성공정 등에서 개방현상(open)을 유발할 수 있다.As such, the fluorine-based polymers formed on the surface of the tungsten wiring are not easily removed and remain, causing an Inter Metal Dielectric crack due to a difference in thermal expansion coefficient with tungsten during high temperature treatment in a subsequent process. In the contact hole forming process, an open phenomenon may be caused.
따라서 종래 기술에서는 이러한 폴리머를 제거하기 위하여 배선형성을 위한 식각시 식각공정 변수를 제어하거나 잔류한 포토레지스트 패턴 제거공정 시간을 연장하거나 그 공정변수를 제어하며, 또는 화학제 용액을 사용한 후처리공정 변수를 제어하거나 화학제 용액의 종류를 변경한다.Therefore, in the prior art, in order to remove such polymers, in order to remove the polymers, the etching process variables are controlled during etching, the remaining photoresist pattern removing process time is extended or the process variables are controlled, or the chemical treatment solution is used as a post-treatment process variable. To control or change the type of chemical solution.
그러나 상술한 금속식각시 생성된 폴리머 제거방법 중 불산기가 함유된 폴리머를 제거하기 위하여 식각조건 내지는 잔류한 포토레지스트 제거조건을 제어하면 텅스텐 배선형성을 위한 제어 마진이 감소하며, 실질적으로 생산라인에서 폴리머 제거용 화학제의 변경은 막대한 비용손실을 초래하는 문제점이 있다.However, controlling the etching conditions or remaining photoresist removal conditions in order to remove the polymer containing hydrofluoric acid among the above-described polymer removal methods during metal etching reduces the control margin for tungsten wiring formation, and substantially the polymer in the production line. Changing the removal chemical has a problem that causes a huge cost loss.
따라서, 본 발명의 목적은 텅스텐을 이용한 금속배선 형성시 배선을 패터닝하기 위한 식각 후 H2O 플라즈마 처리를 이용하여 불소기(F-)를 갖고 있는 폴리머를 제거하기 용이하게 하는 반도체장치의 금속식각시 생성된 폴리머의 제거방법을 제공하는데 있다.Accordingly, an object of the present invention is to etch a metal of a semiconductor device which makes it easy to remove a polymer having a fluorine group (F − ) by using H 2 O plasma treatment after etching to pattern wiring when forming metal wires using tungsten. It is to provide a method for removing the polymer produced at the time.
상기 목적을 달성하기 위한 본 발명에 따른 금속식각시 생성된 폴리머 제거방법은절연막이 형성된 반도체기판 위에 금속층을 형성하는 단계와, 불소기를 갖는 식각제를 이용하여 금속층의 소정 부위를 제거하여 금속패턴을 형성하는 단계와, 금속패턴 표면에 흡착된 불소기를 갖는 폴리머를 H2O 플라즈마 분위기에 노출시키는 단계로 이루어진다.According to the present invention, there is provided a method of removing a polymer generated during metal etching, by forming a metal layer on a semiconductor substrate on which an insulating film is formed, and removing a predetermined portion of the metal layer by using an etchant having a fluorine group. And forming a polymer having a fluorine group adsorbed on the surface of the metal pattern to an H 2 O plasma atmosphere.
도 1은 종래기술에 의해 금속배선 형성을 위한 식각시 생성된 폴리머의 개략적인 모습을 나타낸 단면도1 is a cross-sectional view showing a schematic view of a polymer produced during etching for forming metal wiring by the prior art;
도 2 는 본 발명에 따라 금속배선 형성을 위한 식각시 생성된 폴리머가 연화되는 과정을 나타낸 단면도2 is a cross-sectional view showing a process of softening a polymer produced during etching for forming metal wiring according to the present invention.
본 발명은 반도체장치 제조공정중 반도체기판 위에 소자 등과 절연층 등을 형성한 다음 소정의 회로를 구성하기 위하여 이들을 전기적으로 연결하기 위한 금속배선을 형성시 발생한 이물질인 잔류한 불산기를 포함하는 폴리머들을 금속 표면에 흡착되어 있는 정도를 연화시켜 용이하게 제거시키는 방법에 관한 것이다.According to the present invention, a metal including polymers containing residual hydrofluoric acid, which is a foreign matter generated during forming a metal wiring for electrically connecting them to form a device and an insulating layer on a semiconductor substrate during a semiconductor device manufacturing process, and to form a predetermined circuit. The present invention relates to a method of softening the extent adsorbed on a surface and easily removing the surface.
이하 첨부한 도면을 이용하여 본 발명에 대하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 2 는 본 발명에 따라 금속배선 형성을 위한 식각시 생성된 불소기를 갖는 폴리머의 불소기가 수산기로 치환되는 상태를 나타낸 단면개략도이다.2 is a cross-sectional schematic view showing a state in which a fluorine group of a polymer having a fluorine group generated during etching for forming metal wirings is substituted with a hydroxyl group according to the present invention.
도 2 를 참조하면, 먼저 실리콘기판(1)에 소자등이 형성되고 이들을 보호하는 절연막(2)을 형성한 다음 금속배선을 형성하기 위하여 절연막 위에 금속층(3)을 증착하여 형성한다. 이때 증착되는 금속은 텅스텐을 이용하여 텅스텐층(3)을 형성한다.Referring to FIG. 2, first, an element or the like is formed on the silicon substrate 1, and then an insulating film 2 is formed to protect the silicon substrate 1, and then a metal layer 3 is formed on the insulating film to form a metal wiring. At this time, the deposited metal forms the tungsten layer 3 using tungsten.
그리고 금속층 위에 포토레지스트를 도포한 다음, 금속배선을 패터닝하기 위하여 금속배선 형성용 마스크를 이용한 노광 및 현상을 실시하여 포토레지스트패턴을 정의한다.After the photoresist is applied on the metal layer, the photoresist pattern is defined by performing exposure and development using a mask for forming metal wiring to pattern the metal wiring.
포토레지스트 패턴을 식각 마스크로 이용하여 이로부터 보호되지 아니하는 부위의 텅스텐층을 제거하여 금속배선(3)을 완성한다. 이때 사용되는 식각제는 불산기를 포함하는 식각제를 사용하므로 형성된 텅스텐 금속배선의 표면에는 불산기를 갖는 폴리머들이 흡착되어 있고 이러한 폴리머들에는 -Wx-Fy-, -CH2CHF-, -CF2-CF2- 등이 있으며 이러한 텅스텐 배선의 표면에 형성된 불소기성 폴리머들은 용이하게 제거되지 아니하고 잔류하여 이후 공정에서 고온처리시 텅스텐과의 열팽창률 차이로 인하여 금속층간절연층(Inter Metal Dielectric) 크랙(crack)을 유발하고 이후, 콘택홀 형성공정 등에서 개방현상(open)을 유발할 수 있다.By using the photoresist pattern as an etching mask, the tungsten layer in a portion not protected from it is removed to complete the metal wiring 3. In this case, since the etchant including the hydrofluoric acid group is used, polymers having hydrofluoric acid groups are adsorbed on the surface of the formed tungsten metal wiring, and these polymers are -W x -F y- , -CH 2 CHF-, -CF. 2 -CF 2 -and the fluorine-based polymers formed on the surface of the tungsten wiring is not easily removed and remains, and due to the difference in thermal expansion coefficient with tungsten during the high temperature treatment in the subsequent process, the Inter Metal Dielectric Crack It may cause a crack and then an open phenomenon in a contact hole forming process.
그리고 반도체 기판(1)을 포토레지스트 패턴 제거용 챔버에 넣고 H2O 플라즈마를 이용하여 텅스텐 배선(3)의 표면에 흡착되어 있는 폴리머의 불소기를 플라즈마 상태에서 존재하는 수산이온(OH-)과 치환시켜 텅스텐층(3)의 표면에 흡착정도가 연화된 수산기를 갖는 폴리머(4)를 만든다. 따라서 폴리머에서 떨어져 나온 불소기는 플라즈마 상태의 수소이온과 결합하여 기체상태의 불산(HF)이 되므로 이를 챔버 밖으로 배기시키므로 이후 공정에서 불필요한 폴리머의 제거가 용이해진다.Then, the semiconductor substrate 1 is placed in the photoresist pattern removing chamber and the fluorine group of the polymer adsorbed on the surface of the tungsten wire 3 is replaced with the hydroxide ion (OH − ) present in the plasma state by using H 2 O plasma. To form a polymer 4 having a hydroxyl group with a softened degree of adsorption on the surface of the tungsten layer 3. Therefore, the fluorine group separated from the polymer is combined with hydrogen ions in the plasma state to form gaseous hydrofluoric acid (HF), and is thus exhausted out of the chamber, thereby facilitating removal of unnecessary polymers in subsequent processes.
그리고 화학제 용액을 이용하여 잔류한 포토레지스트 패턴을 제거한다.The remaining photoresist pattern is removed using a chemical solution.
따라서, 본 발명은 금속배선 형성을 위한 텅스텐층 식각 후 불화기를 포함하는 폴리머를 잔류한 포토레지스트패턴을 제거하기 전단계에서 H2O 플라즈마를 이용하여 금속 표면에 흡착되어 있는 폴리머를 후처리서 제거하기 용이하도록 완화시키므로서 식각공정과 포토레지스트 제거공정의 공정여유를 넓히며 또한 이후 공정에서의 잔류 폴리머 문제를 해결하여 제품의 신뢰도를 향상시키는 장점이 있다.Therefore, the present invention is to remove the polymer adsorbed on the metal surface by using H 2 O plasma in the post-treatment step of removing the photoresist pattern containing the polymer containing fluorine after etching the tungsten layer for forming the metal wiring by post-treatment By ease of ease, the process margins of the etching process and the photoresist removal process are expanded, and there is an advantage of improving the reliability of the product by solving the residual polymer problem in the subsequent process.
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