KR19980054502A - How to remove the photoresist pattern - Google Patents

Abstract

1. TECHNICAL FIELD OF THE INVENTION

Semiconductor device manufacturing method

2. The technical problem to be solved by the invention

After the conventional dry etching, a separate process step is required to remove the photoresist pattern used as an etching mask, which leads to an increase in process steps, an increase in manufacturing time of semiconductor devices, and an increase in production cost. Was there.

3. Summary of Solution to Invention

The present invention is to provide a photoresist pattern to remove the photoresist pattern used as an etching mask and the polymer generated during the dry etching in-situ method.

4. Important uses of the invention

Used to remove photoresist patterns in manufacturing semiconductor devices.

Description

How to remove the photoresist pattern

The present invention relates to a method of removing a photoresist pattern used as an etching mask during a semiconductor device manufacturing process.

After performing the conventional dry etching, a separate process step is required to remove the photoresist pattern used as the etching mask, thereby causing an increase in process steps, an increase in manufacturing time of semiconductor devices, and an increase in production cost. Considering that a plurality of etching processes are repeatedly performed in a conventional semiconductor device manufacturing process, the loss due to such a separate photoresist pattern removing process is not small.

An object of the present invention is to provide a photoresist pattern for removing the photoresist pattern used as an etching mask and the polymer generated during the dry etching in-situ method.

In order to achieve the above object, the present invention provides a method of forming a lower layer pattern by dry etching a lower layer using a predetermined photoresist pattern, and then removing the photoresist pattern. The photoresist pattern may be removed at the same time using a reaction gas containing an O ₂ gas.

Hereinafter, an embodiment of the present invention will be described with reference to a method of removing a photoresist pattern which is performed after a dry etching process using an inductively coupled plasma (ICP) type high density plasma method equipped with a heated silicon roof. .

First, the lower metal film is etched using the photoresist pattern as an etch mask to form metal wirings, and polymers generated during dry etching on the metal wiring sidewalls are removed in the same chamber. At this time, the photoresist pattern is removed along with the polymer removal.

The reason such a process as possible is to use most of the dry etching process, the O ₂ gas in the same chamber for the carbon produced as a by-product to remove the rich polymer main reactive chemical agent in the O ₂ gas is a characteristic of etching a photoresist pattern Therefore, the photoresist pattern may be removed without introducing a separate photoresist pattern removal process.

For sufficient removal of the photoresist pattern, the polymer reacted with the O ₂ gas and the etched photoresist can be removed quickly by lowering it to several mTorr using a turbo pump.

Most of the plasma dry etching equipment has a structure that can be processed at a much lower pressure than the photoresist pattern removal equipment, it is advantageous to discharge the reaction by-products during the photoresist removal. In addition, in the high-density plasma type of equipment that can control the density and acceleration energy of the plasma separately, it is possible to minimize the damage to the substrate when removing the photoresist pattern by adjusting the plasma density and energy.

In addition, in addition to O ₂ gas, inert gas such as Ar, He, Ne, Kr, etc. may be added to increase the sputter effect and improve the atmosphere of pember, and O ₃ , CO ₂ , and H ₂ O may be added. It can also be used. In addition, fluorine-based gas may be added and used for effective removal of the polymer.

In the IPC type high density plasma system, the source power is 1500 to 3000 W, the bias power is 100 to 1000 W, the pressure is 2 to 10 mTorr, and the O ₂ gas is input to 50 to 1000 sccm to realize a high flow ratio. This reduces the residence time of the O ₂ gas.

Table 1 below compares the resistance value by removing the photoresist pattern after contact etching, and there is no difference between the conventional method and the resistance value through a separate photoresist pattern removal step, but rather according to an embodiment of the present invention. In the case of removing the resist, it can be seen that the resistance between the metal film and the p ⁺ chain has a significant improvement effect. The resistance value according to an embodiment of the present invention shown in Table 1 is a relative value based on the resistance value according to the conventional method '1'.

TABLE 1

In addition, Table 2 below shows the resistance value according to the increase in the photoresist pattern removal time, and it can be seen that the effect of the resistance value is improved as the photoresist pattern removal time increases. This is because over time, the substrate surface is cleaned by removing more remaining photoresist pattern and polymer. The resistance value according to the exemplary embodiment of the present invention shown in Table 1 represents a relative value with time increase based on the resistance value when the time is small as '1'.

TABLE 2

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.

As described above, the present invention has the effect of simplifying the process and reducing the process time by removing the photoresist pattern used as an etching mask of the semiconductor device without a separate removing process, and improving the electrical characteristics to improve the reliability of the semiconductor device. It is effective to improve.

Claims (9)

In the method of forming a lower layer pattern by dry etching the lower layer using a predetermined photoresist pattern, and then removing the photoresist pattern, And removing the polymer and the photoresist pattern generated during the dry etching using a reaction gas containing an O ₂ gas at the same time. The method of claim 1, And removing the polymer and the photoresist pattern and the dry etching are performed in the same equipment. The method according to claim 1 or 2, The reaction gas is The method of removing a photoresist pattern of a semiconductor device, further comprising an inert gas. The method according to claim 1 or 2, The reaction gas is The method of removing a photoresist pattern of a semiconductor device, further comprising a fluorine-based gas. The method according to claim 1 or 2, The reaction gas is A method of removing a photoresist pattern of a semiconductor device, further comprising at least one of O ₃ , CO ₂ , and H ₂ O gas. The method according to claim 1 or 2, The O ₂ gas is A method for removing a photoresist pattern of a semiconductor device, characterized by using 50 to 1000 sccm. The equipment A method of removing a photoresist pattern of a semiconductor device, characterized by an ICP type high density plasma equipment. The method of claim 7, wherein The equipment A method of removing a photoresist pattern of a semiconductor device, using source power of 1500 to 3000W and bias power of 100 to 1000W. The method of claim 7, wherein The equipment The method of removing a photoresist pattern of a semiconductor device, characterized by using a pressure of 2 to 10mTorr.