KR19990023724A - 기상 박막 성장 장치 및 기상 박막 성장 방법 - Google Patents
기상 박막 성장 장치 및 기상 박막 성장 방법 Download PDFInfo
- Publication number
- KR19990023724A KR19990023724A KR1019980033712A KR19980033712A KR19990023724A KR 19990023724 A KR19990023724 A KR 19990023724A KR 1019980033712 A KR1019980033712 A KR 1019980033712A KR 19980033712 A KR19980033712 A KR 19980033712A KR 19990023724 A KR19990023724 A KR 19990023724A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- substrate holder
- vapor phase
- gas
- reactor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP97-240330 | 1997-08-21 | ||
JP9240330A JPH1167674A (ja) | 1997-08-21 | 1997-08-21 | 気相薄膜成長装置及び気相薄膜成長方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR19990023724A true KR19990023724A (ko) | 1999-03-25 |
Family
ID=17057881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980033712A KR19990023724A (ko) | 1997-08-21 | 1998-08-20 | 기상 박막 성장 장치 및 기상 박막 성장 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH1167674A (ja) |
KR (1) | KR19990023724A (ja) |
TW (1) | TW400549B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4484185B2 (ja) * | 2000-08-29 | 2010-06-16 | コバレントマテリアル株式会社 | シリコン半導体基板の化学的気相薄膜成長方法 |
US6506252B2 (en) * | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
JP2011171450A (ja) * | 2010-02-17 | 2011-09-01 | Nuflare Technology Inc | 成膜装置および成膜方法 |
JP5572118B2 (ja) * | 2011-03-28 | 2014-08-13 | 株式会社豊田中央研究所 | 表面処理装置 |
-
1997
- 1997-08-21 JP JP9240330A patent/JPH1167674A/ja active Pending
-
1998
- 1998-08-20 KR KR1019980033712A patent/KR19990023724A/ko not_active Application Discontinuation
- 1998-08-21 TW TW087113775A patent/TW400549B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW400549B (en) | 2000-08-01 |
JPH1167674A (ja) | 1999-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |