KR19990023724A - 기상 박막 성장 장치 및 기상 박막 성장 방법 - Google Patents

기상 박막 성장 장치 및 기상 박막 성장 방법 Download PDF

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Publication number
KR19990023724A
KR19990023724A KR1019980033712A KR19980033712A KR19990023724A KR 19990023724 A KR19990023724 A KR 19990023724A KR 1019980033712 A KR1019980033712 A KR 1019980033712A KR 19980033712 A KR19980033712 A KR 19980033712A KR 19990023724 A KR19990023724 A KR 19990023724A
Authority
KR
South Korea
Prior art keywords
thin film
substrate holder
vapor phase
gas
reactor
Prior art date
Application number
KR1019980033712A
Other languages
English (en)
Korean (ko)
Inventor
다다시 오하시
가투히로 차키
핑 씬
다츠오 후지이
가츠유키 이와타
신이치 미타니
다카아키 혼다
유우스케 사토
Original Assignee
이데이 노부유끼
소니 가부시끼 가이샤
오카노 사다오
도시바 기카이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유끼, 소니 가부시끼 가이샤, 오카노 사다오, 도시바 기카이 가부시키가이샤 filed Critical 이데이 노부유끼
Publication of KR19990023724A publication Critical patent/KR19990023724A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019980033712A 1997-08-21 1998-08-20 기상 박막 성장 장치 및 기상 박막 성장 방법 KR19990023724A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9240330A JPH1167674A (ja) 1997-08-21 1997-08-21 気相薄膜成長装置及び気相薄膜成長方法
JP97-240330 1997-08-21

Publications (1)

Publication Number Publication Date
KR19990023724A true KR19990023724A (ko) 1999-03-25

Family

ID=17057881

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980033712A KR19990023724A (ko) 1997-08-21 1998-08-20 기상 박막 성장 장치 및 기상 박막 성장 방법

Country Status (3)

Country Link
JP (1) JPH1167674A (ja)
KR (1) KR19990023724A (ja)
TW (1) TW400549B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4484185B2 (ja) * 2000-08-29 2010-06-16 コバレントマテリアル株式会社 シリコン半導体基板の化学的気相薄膜成長方法
US6506252B2 (en) * 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
JP2011171450A (ja) * 2010-02-17 2011-09-01 Nuflare Technology Inc 成膜装置および成膜方法
JP5572118B2 (ja) * 2011-03-28 2014-08-13 株式会社豊田中央研究所 表面処理装置

Also Published As

Publication number Publication date
TW400549B (en) 2000-08-01
JPH1167674A (ja) 1999-03-09

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