KR100753456B1 - 감압 기상 에피택셜 성장 장치 및 그 장치의 제어 방법 - Google Patents
감압 기상 에피택셜 성장 장치 및 그 장치의 제어 방법 Download PDFInfo
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- KR100753456B1 KR100753456B1 KR1020010034285A KR20010034285A KR100753456B1 KR 100753456 B1 KR100753456 B1 KR 100753456B1 KR 1020010034285 A KR1020010034285 A KR 1020010034285A KR 20010034285 A KR20010034285 A KR 20010034285A KR 100753456 B1 KR100753456 B1 KR 100753456B1
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- Prior art keywords
- pressure
- internal pressure
- discharge pipe
- epitaxial growth
- gas discharge
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007792 gaseous phase Substances 0.000 title 1
- 230000007246 mechanism Effects 0.000 claims abstract description 91
- 238000010926 purge Methods 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 230000001105 regulatory effect Effects 0.000 claims abstract description 20
- 230000001276 controlling effect Effects 0.000 claims abstract description 15
- 238000007599 discharging Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 21
- 230000009467 reduction Effects 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 19
- 239000007789 gas Substances 0.000 description 70
- 235000012431 wafers Nutrition 0.000 description 32
- 239000010408 film Substances 0.000 description 23
- 239000002184 metal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Classifications
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- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
- 처리로와, 처리로 내부에 배치되어 반도체 웨이퍼를 얹어 놓고 회전하는 서셉터와, 상기 서셉터를 회전시키는 회전 기구부와, 처리로 내부에 성막용 가스를 도입하는 가스 도입관과, 상기 성막용 가스를 배출하는 가스 배출관을 구비한 감압 에피택셜 성장 장치에 있어서,상기 회전 기구부 내부를 퍼지하기 위한 퍼지 가스 도입관과,상기 퍼지 가스 도입관을 통하여 도입된 가스를 배출하는 퍼지 가스 배출관과,상기 퍼지 가스 배출관에 설치된 제1 압력 조정 밸브와,상기 회전 기구부 내의 내압을 검출하는 제1 압력계와,상기 제1 압력계에 의해 검출된 압력에 기초해서 연산 처리하여 회전 기구부 내부의 압력이 적정치가 되도록 퍼지 가스 배출관에 설치된 제1 압력 조정 밸브의 개방도를 제어하는 제1 연산/제어부를 구비하는 것을 특징으로 하는 감압 에피택셜 성장 장치.
- 제1항에 있어서, 상기 처리로의 내압을 검출하는 제2 압력계 및 회전 기구부 내의 내압을 검출하는 제1 압력계를 구비하고, 상기 제1 연산/제어부는 상기 검출된 처리로의 내압 및 회전 기구부 내의 내압에 기초해서 연산 처리하여 상기 회전 기구부 내부의 압력이 적정치가 되도록 퍼지 가스 배출관에 설치된 제1 압력 조정 밸브의 개방도를 제어하는 것을 특징으로 하는 감압 에피택셜 성장 장치.
- 제1항 또는 제2항에 있어서, 상기 성막용 가스를 배출하는 가스 배출관에 설치된 제2 압력 조정 밸브, 상기 처리로의 내압을 검출하는 제2 압력계, 및 상기 제2 압력계에 의해 검출된 처리로의 내압에 기초해서 연산 처리하여 처리로 내부의 압력이 적정치가 되도록 성막용 가스를 배출하는 가스 배출관에 설치된 제2 압력 조정 밸브의 개방도를 제어하는 제2 연산/제어부를 더 구비한 것을 특징으로 하는 감압 에피택셜 성장 장치.
- 제1항 또는 제2항에 기재된 감압 에피택셜 성장 장치의 제어 방법에 있어서, 상기 처리로의 내압을 p1으로 하고, 상기 회전 기구부 내압을 p2로 했을 때, p2와 p1의 비(P)(P=p2/p1)를 0.9≤P≤1.0의 범위로 제어하는 것을 특징으로 하는 감압 에피택셜 성장 장치의 제어 방법.
- 제3항에 기재된 감압 에피택셜 성장 장치의 제어 방법에 있어서, 상기 처리로의 내압을 p1으로 하고, 상기 회전 기구부 내압을 p2로 했을 때, p2와 p1의 비(P)(P=p2/p1)를 0.9≤P≤1.0의 범위로 제어하는 것을 특징으로 하는 감압 에피택셜 성장 장치의 제어 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000182598A JP4442841B2 (ja) | 2000-06-19 | 2000-06-19 | 減圧エピタキシャル成長装置およびその装置の制御方法 |
JP2000-182598 | 2000-06-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010113534A KR20010113534A (ko) | 2001-12-28 |
KR100753456B1 true KR100753456B1 (ko) | 2007-08-31 |
Family
ID=18683328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010034285A KR100753456B1 (ko) | 2000-06-19 | 2001-06-18 | 감압 기상 에피택셜 성장 장치 및 그 장치의 제어 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6485573B2 (ko) |
JP (1) | JP4442841B2 (ko) |
KR (1) | KR100753456B1 (ko) |
TW (1) | TW495850B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100125516A1 (en) * | 2008-11-14 | 2010-05-20 | Wankmueller John R | Methods and systems for secure mobile device initiated payments |
JP5750328B2 (ja) * | 2011-07-20 | 2015-07-22 | 株式会社ニューフレアテクノロジー | 気相成長方法及び気相成長装置 |
TWI579606B (zh) * | 2015-11-20 | 2017-04-21 | 鴻海精密工業股份有限公司 | 導光裝置及滑鼠 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0144503B1 (ko) * | 1994-08-16 | 1998-07-15 | 세끼사와 다다시 | 기상처리장치 및 방법 |
KR100528355B1 (ko) * | 1996-11-18 | 2006-01-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 하나이상의가스를여기시키기위한장치 |
Family Cites Families (13)
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US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US5002011A (en) * | 1987-04-14 | 1991-03-26 | Kabushiki Kaisha Toshiba | Vapor deposition apparatus |
US5062386A (en) * | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
US5314541A (en) * | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
JPH0590214A (ja) * | 1991-09-30 | 1993-04-09 | Tokyo Ohka Kogyo Co Ltd | 同軸型プラズマ処理装置 |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
US5551982A (en) * | 1994-03-31 | 1996-09-03 | Applied Materials, Inc. | Semiconductor wafer process chamber with susceptor back coating |
US5518549A (en) * | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
US5849076A (en) * | 1996-07-26 | 1998-12-15 | Memc Electronic Materials, Inc. | Cooling system and method for epitaxial barrel reactor |
US6184154B1 (en) * | 1999-10-13 | 2001-02-06 | Seh America, Inc. | Method of processing the backside of a wafer within an epitaxial reactor chamber |
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2000
- 2000-06-19 JP JP2000182598A patent/JP4442841B2/ja not_active Expired - Fee Related
-
2001
- 2001-05-16 US US09/855,654 patent/US6485573B2/en not_active Expired - Lifetime
- 2001-05-23 TW TW090112352A patent/TW495850B/zh not_active IP Right Cessation
- 2001-06-18 KR KR1020010034285A patent/KR100753456B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR0144503B1 (ko) * | 1994-08-16 | 1998-07-15 | 세끼사와 다다시 | 기상처리장치 및 방법 |
KR100528355B1 (ko) * | 1996-11-18 | 2006-01-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 하나이상의가스를여기시키기위한장치 |
Also Published As
Publication number | Publication date |
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JP4442841B2 (ja) | 2010-03-31 |
US20010052316A1 (en) | 2001-12-20 |
US6485573B2 (en) | 2002-11-26 |
TW495850B (en) | 2002-07-21 |
JP2002008981A (ja) | 2002-01-11 |
KR20010113534A (ko) | 2001-12-28 |
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