KR19980086488A - 콘택트홀 형성 방법 및 다층 배선 구조물 - Google Patents
콘택트홀 형성 방법 및 다층 배선 구조물 Download PDFInfo
- Publication number
- KR19980086488A KR19980086488A KR1019980002752A KR19980002752A KR19980086488A KR 19980086488 A KR19980086488 A KR 19980086488A KR 1019980002752 A KR1019980002752 A KR 1019980002752A KR 19980002752 A KR19980002752 A KR 19980002752A KR 19980086488 A KR19980086488 A KR 19980086488A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive film
- contact hole
- electrode wiring
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
- H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13821397A JP4663038B2 (ja) | 1997-05-28 | 1997-05-28 | コンタクトホールの形成方法 |
| JP97-138213 | 1997-05-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19980086488A true KR19980086488A (ko) | 1998-12-05 |
Family
ID=15216734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980002752A Ceased KR19980086488A (ko) | 1997-05-28 | 1998-02-02 | 콘택트홀 형성 방법 및 다층 배선 구조물 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5963826A (https=) |
| JP (1) | JP4663038B2 (https=) |
| KR (1) | KR19980086488A (https=) |
| TW (1) | TW387095B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008540A (en) * | 1997-05-28 | 1999-12-28 | Texas Instruments Incorporated | Integrated circuit dielectric and method |
| JPH1145779A (ja) * | 1997-07-25 | 1999-02-16 | Tdk Corp | 有機ｅｌ素子の製造方法および装置 |
| US6303972B1 (en) * | 1998-11-25 | 2001-10-16 | Micron Technology, Inc. | Device including a conductive layer protected against oxidation |
| US7067861B1 (en) * | 1998-11-25 | 2006-06-27 | Micron Technology, Inc. | Device and method for protecting against oxidation of a conductive layer in said device |
| US6492242B1 (en) * | 2000-07-03 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming of high K metallic dielectric layer |
| KR100556346B1 (ko) * | 2001-12-28 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | 금속 배선 형성방법 |
| KR100518228B1 (ko) * | 2003-05-21 | 2005-10-04 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| CN100362413C (zh) * | 2004-09-29 | 2008-01-16 | 财团法人工业技术研究院 | 一种制作电子装置的方法 |
| JP4604743B2 (ja) * | 2005-02-01 | 2011-01-05 | セイコーエプソン株式会社 | 機能性基板の製造方法、機能性基板、微細パターンの形成方法、導電膜配線、電子光学装置および電子機器 |
| TWI310026B (en) * | 2006-07-31 | 2009-05-21 | Ether Precision Inc | The molding die of molding glasses and its recycling method |
| JP5303994B2 (ja) * | 2008-03-31 | 2013-10-02 | 東亞合成株式会社 | エッチング方法、及び、導電性高分子を有する基板 |
| JP2012033689A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
| JP2012033688A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| JPWO2018230377A1 (ja) * | 2017-06-14 | 2020-04-09 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3851161A (en) * | 1973-05-07 | 1974-11-26 | Burroughs Corp | Continuity network testing and fault isolating |
| JPH01152648A (ja) * | 1987-12-09 | 1989-06-15 | Matsushita Electron Corp | 半導体装置 |
| US5236551A (en) * | 1990-05-10 | 1993-08-17 | Microelectronics And Computer Technology Corporation | Rework of polymeric dielectric electrical interconnect by laser photoablation |
| JPH04253342A (ja) * | 1991-01-29 | 1992-09-09 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ基板 |
| US5427962A (en) * | 1991-11-15 | 1995-06-27 | Casio Computer Co., Ltd. | Method of making a thin film transistor |
| US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| KR960012259B1 (ko) * | 1993-03-13 | 1996-09-18 | 삼성전자 주식회사 | 반도체 장치의 제조방법 |
| US5472913A (en) * | 1994-08-05 | 1995-12-05 | Texas Instruments Incorporated | Method of fabricating porous dielectric material with a passivation layer for electronics applications |
| JPH0936407A (ja) * | 1995-07-24 | 1997-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
| JPH10239709A (ja) * | 1997-03-03 | 1998-09-11 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
-
1997
- 1997-05-28 JP JP13821397A patent/JP4663038B2/ja not_active Expired - Lifetime
- 1997-12-01 US US08/982,079 patent/US5963826A/en not_active Expired - Lifetime
-
1998
- 1998-01-26 TW TW087101031A patent/TW387095B/zh not_active IP Right Cessation
- 1998-02-02 KR KR1019980002752A patent/KR19980086488A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US5963826A (en) | 1999-10-05 |
| JPH10335452A (ja) | 1998-12-18 |
| JP4663038B2 (ja) | 2011-03-30 |
| TW387095B (en) | 2000-04-11 |
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