KR102948025B1 - 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법

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Publication number
KR102948025B1
KR102948025B1 KR1020227030750A KR20227030750A KR102948025B1 KR 102948025 B1 KR102948025 B1 KR 102948025B1 KR 1020227030750 A KR1020227030750 A KR 1020227030750A KR 20227030750 A KR20227030750 A KR 20227030750A KR 102948025 B1 KR102948025 B1 KR 102948025B1
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KR
South Korea
Prior art keywords
light
film
mask
thin film
mask blank
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Application number
KR1020227030750A
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English (en)
Korean (ko)
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KR20220156818A (ko
Inventor
오사무 노자와
케이시 아키야마
탁 림 혹
후이 준 탐
Original Assignee
호야 가부시키가이샤
호야 일렉트로닉스 싱가포르 프라이빗 리미티드
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Application filed by 호야 가부시키가이샤, 호야 일렉트로닉스 싱가포르 프라이빗 리미티드 filed Critical 호야 가부시키가이샤
Publication of KR20220156818A publication Critical patent/KR20220156818A/ko
Application granted granted Critical
Publication of KR102948025B1 publication Critical patent/KR102948025B1/ko
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020227030750A 2020-03-19 2021-03-08 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법 Active KR102948025B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-049162 2020-03-19
JP2020049162A JP7354032B2 (ja) 2020-03-19 2020-03-19 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
PCT/JP2021/008915 WO2021187189A1 (ja) 2020-03-19 2021-03-08 マスクブランク、転写用マスク、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20220156818A KR20220156818A (ko) 2022-11-28
KR102948025B1 true KR102948025B1 (ko) 2026-04-06

Family

ID=77771232

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227030750A Active KR102948025B1 (ko) 2020-03-19 2021-03-08 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법

Country Status (6)

Country Link
US (1) US20230097280A1 (https=)
JP (1) JP7354032B2 (https=)
KR (1) KR102948025B1 (https=)
CN (1) CN115280236B (https=)
TW (1) TWI899176B (https=)
WO (1) WO2021187189A1 (https=)

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US12210279B2 (en) * 2021-05-27 2025-01-28 AGC Inc. Electroconductive-film-coated substrate and reflective mask blank
JP7375065B2 (ja) * 2022-02-24 2023-11-07 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び表示装置の製造方法
KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (1)

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JP2006184353A (ja) 2004-12-27 2006-07-13 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク

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JPS6039047U (ja) * 1983-08-24 1985-03-18 凸版印刷株式会社 マスクブランク板
JP2002090977A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランク、フォトマスクブランク、並びにそれらの製造装置及び製造方法
TW578034B (en) * 2001-09-28 2004-03-01 Hoya Corp Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
WO2004051369A1 (ja) * 2002-12-03 2004-06-17 Hoya Corporation フォトマスクブランク、及びフォトマスク
TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
JP4339214B2 (ja) * 2004-09-13 2009-10-07 Ｈｏｙａ株式会社 マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法
US7632609B2 (en) * 2005-10-24 2009-12-15 Shin-Etsu Chemical Co., Ltd. Fabrication method of photomask-blank
JP5015537B2 (ja) 2006-09-26 2012-08-29 Ｈｏｙａ株式会社 フォトマスクの製造方法及びパターンの転写方法
JP5086714B2 (ja) * 2007-07-13 2012-11-28 Ｈｏｙａ株式会社 マスクブランクの製造方法及びフォトマスクの製造方法
KR101295235B1 (ko) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법
KR101670351B1 (ko) * 2010-11-26 2016-10-31 주식회사 에스앤에스텍 마스크 블랭크의 제조 방법 및 마스크 블랭크
WO2013146488A1 (ja) * 2012-03-28 2013-10-03 Hoya株式会社 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US9377679B2 (en) * 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
JP2014209200A (ja) 2013-03-22 2014-11-06 Hoya株式会社 マスクブランクの製造方法および転写用マスクの製造方法
JP5868905B2 (ja) * 2013-07-03 2016-02-24 信越化学工業株式会社 フォトマスクブランクの製造方法およびフォトマスクブランク
DE102014216121A1 (de) * 2014-08-13 2016-02-18 Carl Zeiss Smt Gmbh Maske für die EUV-Lithographie, EUV-Lithographieanlage und Verfahren zum Bestimmen eines durch DUV-Strahlung hervorgerufenen Kontrastanteils
US20160266482A1 (en) * 2015-03-10 2016-09-15 Asahi Glass Company, Limited Glass substrate for mask blank
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JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
KR102368405B1 (ko) * 2015-11-06 2022-02-28 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR102254035B1 (ko) * 2016-08-26 2021-05-20 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 반도체 디바이스의 제조 방법
JP6400763B2 (ja) * 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
US11281088B2 (en) * 2017-04-17 2022-03-22 AGC Inc. Reflective mask blank for EUV exposure, and reflective mask
CN110770652B (zh) 2017-06-14 2023-03-21 Hoya株式会社 掩模坯料、相移掩模及半导体器件的制造方法
KR102688948B1 (ko) * 2017-09-21 2024-07-29 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법
JP7370943B2 (ja) * 2020-07-15 2023-10-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
JP7581107B2 (ja) * 2021-03-29 2024-11-12 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
KR102587396B1 (ko) * 2022-08-18 2023-10-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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Also Published As

Publication number Publication date
CN115280236A (zh) 2022-11-01
US20230097280A1 (en) 2023-03-30
KR20220156818A (ko) 2022-11-28
TWI899176B (zh) 2025-10-01
JP2021148968A (ja) 2021-09-27
TW202201117A (zh) 2022-01-01
CN115280236B (zh) 2025-07-01
WO2021187189A1 (ja) 2021-09-23
JP7354032B2 (ja) 2023-10-02

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