KR102916286B1 - 화합물, 산 발생제, 조성물, 경화물 및 패턴, 그리고 경화물 및 패턴의 제조 방법 - Google Patents

화합물, 산 발생제, 조성물, 경화물 및 패턴, 그리고 경화물 및 패턴의 제조 방법

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KR102916286B1
KR102916286B1 KR1020217031839A KR20217031839A KR102916286B1 KR 102916286 B1 KR102916286 B1 KR 102916286B1 KR 1020217031839 A KR1020217031839 A KR 1020217031839A KR 20217031839 A KR20217031839 A KR 20217031839A KR 102916286 B1 KR102916286 B1 KR 102916286B1
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group
carbon atoms
acid
compound
aliphatic hydrocarbon
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KR20220061909A (ko
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이즈미 마츠이
테츠유키 나카야시키
토모유키 아리요시
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가부시키가이샤 아데카
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
    • C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
    • C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
    • C07C321/24—Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
    • C07D335/12—Thioxanthenes
    • C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
    • C07D335/16—Oxygen atoms, e.g. thioxanthones
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
KR1020217031839A 2019-09-10 2020-09-08 화합물, 산 발생제, 조성물, 경화물 및 패턴, 그리고 경화물 및 패턴의 제조 방법 Active KR102916286B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-164899 2019-09-10
JP2019164899 2019-09-10
PCT/JP2020/033851 WO2021049470A1 (ja) 2019-09-10 2020-09-08 化合物、酸発生剤、組成物、硬化物及びパターン、並びに硬化物及びパターンの製造方法

Publications (2)

Publication Number Publication Date
KR20220061909A KR20220061909A (ko) 2022-05-13
KR102916286B1 true KR102916286B1 (ko) 2026-01-22

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Country Status (5)

Country Link
JP (1) JP7594534B2 (https=)
KR (1) KR102916286B1 (https=)
CN (1) CN113727967A (https=)
TW (1) TW202116728A (https=)
WO (1) WO2021049470A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7824280B2 (ja) * 2021-04-22 2026-03-04 株式会社Adeka 化合物、酸発生剤、組成物、硬化物、硬化物の製造方法、パターン及びパターンの製造方法
WO2023044364A1 (en) 2021-09-15 2023-03-23 Enko Chem, Inc. Protoporphyrinogen oxidase inhibitors
KR20250162509A (ko) * 2023-03-23 2025-11-18 가부시키가이샤 아데카 화합물, 조성물, 경화물 및 패턴
CN117720483A (zh) * 2023-11-08 2024-03-19 湖北三峡实验室 一类含芳香性三氟甲肟基磺酸酯结构的光产酸剂及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
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JP2005319758A (ja) * 2004-05-11 2005-11-17 Fuji Photo Film Co Ltd 平版印刷方法及びそれに用いる平版印刷版原版
CN103389621A (zh) * 2013-07-26 2013-11-13 常州强力先端电子材料有限公司 一种磺酸肟酯类光产酸剂
KR101491975B1 (ko) * 2014-03-14 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브 감광성 경화 수지 조성물, 이를 이용한 경화막의 제조 방법 및 경화막을 포함하는 전자소자
KR101491973B1 (ko) * 2014-03-12 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브형 포토레지스트 조성물 및 이를 이용한 tft 레지스트 패턴 형성방법

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Publication number Priority date Publication date Assignee Title
SG78412A1 (en) * 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
WO2004074242A2 (en) * 2003-02-19 2004-09-02 Ciba Specialty Chemicals Holding Inc. Halogenated oxime derivatives and the use thereof as latent acids
WO2006008250A2 (en) 2004-07-20 2006-01-26 Ciba Specialty Chemicals Holding Inc. Oxime derivatives and the use therof as latent acids
JP2010164964A (ja) * 2008-12-19 2010-07-29 Fujifilm Corp 感光性組成物、カラーフィルタ、および液晶表示装置
JP6605820B2 (ja) 2015-03-11 2019-11-13 株式会社Ａｄｅｋａ オキシムスルホネート化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物
KR20180101564A (ko) 2016-01-26 2018-09-12 가부시키가이샤 아데카 열산 발생제 및 이것을 사용한 레지스트 조성물
CN107163169B (zh) * 2017-05-25 2018-08-24 同济大学 一类香豆素并咔唑型肟酯类化合物及其制备方法和应用
CN110806677A (zh) * 2018-08-06 2020-02-18 常州强力先端电子材料有限公司 光致抗蚀剂组合物、其图案形成方法及应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005319758A (ja) * 2004-05-11 2005-11-17 Fuji Photo Film Co Ltd 平版印刷方法及びそれに用いる平版印刷版原版
CN103389621A (zh) * 2013-07-26 2013-11-13 常州强力先端电子材料有限公司 一种磺酸肟酯类光产酸剂
KR101491973B1 (ko) * 2014-03-12 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브형 포토레지스트 조성물 및 이를 이용한 tft 레지스트 패턴 형성방법
KR101491975B1 (ko) * 2014-03-14 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브 감광성 경화 수지 조성물, 이를 이용한 경화막의 제조 방법 및 경화막을 포함하는 전자소자

Also Published As

Publication number Publication date
CN113727967A (zh) 2021-11-30
JPWO2021049470A1 (https=) 2021-03-18
KR20220061909A (ko) 2022-05-13
JP7594534B2 (ja) 2024-12-04
TW202116728A (zh) 2021-05-01
WO2021049470A1 (ja) 2021-03-18

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