KR102896548B1 - 감광성 수지 조성물, 감광성 시트, 경화막, 경화막의 제조 방법, 전자 부품, 안테나 소자, 반도체 패키지 및 표시 장치 - Google Patents

감광성 수지 조성물, 감광성 시트, 경화막, 경화막의 제조 방법, 전자 부품, 안테나 소자, 반도체 패키지 및 표시 장치

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KR102896548B1
KR102896548B1 KR1020227030465A KR20227030465A KR102896548B1 KR 102896548 B1 KR102896548 B1 KR 102896548B1 KR 1020227030465 A KR1020227030465 A KR 1020227030465A KR 20227030465 A KR20227030465 A KR 20227030465A KR 102896548 B1 KR102896548 B1 KR 102896548B1
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group
carbon atoms
formula
organic group
photosensitive resin
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KR20220155275A (ko
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히사시 오가사와라
히토시 아라키
마사야 주케이
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도레이 카부시키가이샤
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
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    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
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    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
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    • C08G18/8116—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group esters of acrylic or alkylacrylic acid having only one isocyanate or isothiocyanate group
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    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/101—Preparatory processes from tetracarboxylic acids or derivatives and diamines containing chain terminating or branching agents
    • C08G73/1017—Preparatory processes from tetracarboxylic acids or derivatives and diamines containing chain terminating or branching agents in the form of (mono)amine
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    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
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JP7311002B2 (ja) 2021-09-30 2023-07-19 荒川化学工業株式会社 硬化型感光性樹脂組成物、硬化物、レジストパターン、レジストパターンの製造方法、半導体素子及び電子デバイス
JP7682113B2 (ja) * 2022-01-25 2025-05-23 日本化薬株式会社 ポリイミド樹脂、該ポリイミド樹脂含有する樹脂組成物及びその硬化物
JP7782317B2 (ja) * 2022-03-02 2025-12-09 日産化学株式会社 感光性樹脂組成物
WO2024100764A1 (ja) * 2022-11-08 2024-05-16 株式会社レゾナック 感光性樹脂組成物、硬化物、及び半導体素子
KR102813406B1 (ko) * 2022-12-15 2025-05-29 주식회사 넥스플렉스 폴리이미드 수지 조성물, 폴리이미드계 접착 조성물, 폴리이미드 접착 필름 및 연성금속박적층필름
CN120322486A (zh) * 2023-02-17 2025-07-15 东丽株式会社 聚酰亚胺树脂、感光性树脂组合物、固化物、有机el显示装置及电子部件
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009251451A (ja) * 2008-04-09 2009-10-29 Hitachi Chem Co Ltd 感光性樹脂組成物及び感光性エレメント
WO2014081894A1 (en) 2012-11-20 2014-05-30 Designer Molecules Inc Low modulus negative tone, aqueous developable photoresist
JP2018203959A (ja) 2017-06-09 2018-12-27 日鉄ケミカル＆マテリアル株式会社 ポリイミド及び感光性樹脂組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5211438B2 (ja) 2005-06-09 2013-06-12 東レ株式会社 樹脂組成物およびそれを用いた表示装置
JP4888421B2 (ja) * 2008-03-05 2012-02-29 日本電気株式会社 電子機器及び省電力制御方法並びにプログラム
JP2010256532A (ja) * 2009-04-23 2010-11-11 Hitachi Chem Co Ltd 感光性樹脂組成物、感光性エレメント及びこれを用いたレジストパターンの形成方法
JP5444833B2 (ja) * 2009-05-18 2014-03-19 日立化成株式会社 感光性樹脂組成物、リブパターンの形成方法及び電子部品
WO2019044874A1 (ja) 2017-09-01 2019-03-07 日産化学株式会社 感光性樹脂組成物
JP2019172970A (ja) * 2018-03-26 2019-10-10 東レ株式会社 表示デバイスまたは受光デバイスの基板用樹脂組成物、並びに、それを用いた表示デバイスまたは受光デバイスの基板、表示デバイス、受光デバイス、表示デバイスまたは受光デバイスの製造方法。
CN114144467B (zh) * 2019-06-28 2023-05-23 三菱瓦斯化学株式会社 树脂组合物、树脂片、层叠体、带树脂组合物层的半导体晶圆、基板和半导体装置
WO2021065704A1 (ja) * 2019-10-01 2021-04-08 東レ株式会社 熱硬化性樹脂組成物、熱硬化性樹脂シート、電子部品、及び電子装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009251451A (ja) * 2008-04-09 2009-10-29 Hitachi Chem Co Ltd 感光性樹脂組成物及び感光性エレメント
WO2014081894A1 (en) 2012-11-20 2014-05-30 Designer Molecules Inc Low modulus negative tone, aqueous developable photoresist
US20150344627A1 (en) * 2012-11-20 2015-12-03 Designer Molecules, Inc. Low modulus negative tone, aqueous developable photoresist
JP2018203959A (ja) 2017-06-09 2018-12-27 日鉄ケミカル＆マテリアル株式会社 ポリイミド及び感光性樹脂組成物

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