JP7318206B2 - 感光性樹脂組成物、感光性シート、ならびにそれらの硬化膜、その製造方法、それを用いた中空構造体および電子部品 - Google Patents
感光性樹脂組成物、感光性シート、ならびにそれらの硬化膜、その製造方法、それを用いた中空構造体および電子部品 Download PDFInfo
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- JP7318206B2 JP7318206B2 JP2018551885A JP2018551885A JP7318206B2 JP 7318206 B2 JP7318206 B2 JP 7318206B2 JP 2018551885 A JP2018551885 A JP 2018551885A JP 2018551885 A JP2018551885 A JP 2018551885A JP 7318206 B2 JP7318206 B2 JP 7318206B2
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- 150000002739 metals Chemical class 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CXKWCBBOMKCUKX-UHFFFAOYSA-M methylene blue Chemical compound [Cl-].C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 CXKWCBBOMKCUKX-UHFFFAOYSA-M 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- VAWFFNJAPKXVPH-UHFFFAOYSA-N naphthalene-1,6-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(C(=O)O)=CC=C21 VAWFFNJAPKXVPH-UHFFFAOYSA-N 0.000 description 1
- JSKSILUXAHIKNP-UHFFFAOYSA-N naphthalene-1,7-dicarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(C(=O)O)=CC=C21 JSKSILUXAHIKNP-UHFFFAOYSA-N 0.000 description 1
- DASJFYAPNPUBGG-UHFFFAOYSA-N naphthalene-1-sulfonyl chloride Chemical compound C1=CC=C2C(S(=O)(=O)Cl)=CC=CC2=C1 DASJFYAPNPUBGG-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- BHZDBSUDGBEJDI-UHFFFAOYSA-N nonacosanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O BHZDBSUDGBEJDI-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- 230000002165 photosensitisation Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- QMYDVDBERNLWKB-UHFFFAOYSA-N propane-1,2-diol;hydrate Chemical compound O.CC(O)CO QMYDVDBERNLWKB-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- VHXJRLYFEJAIAM-UHFFFAOYSA-N quinoline-2-sulfonyl chloride Chemical compound C1=CC=CC2=NC(S(=O)(=O)Cl)=CC=C21 VHXJRLYFEJAIAM-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- JXEMDDQFQCSDKC-UHFFFAOYSA-N tetrakis(1,2,2,6,6-pentamethyl-3H-pyridin-4-yl) butane-1,2,3,4-tetracarboxylate Chemical compound CN1C(CC(=CC1(C)C)OC(=O)CC(C(CC(=O)OC=1CC(N(C(C=1)(C)C)C)(C)C)C(=O)OC=1CC(N(C(C=1)(C)C)C)(C)C)C(=O)OC=1CC(N(C(C=1)(C)C)C)(C)C)(C)C JXEMDDQFQCSDKC-UHFFFAOYSA-N 0.000 description 1
- MMJYBHUDYOHPOG-UHFFFAOYSA-N tetrakis(2,2,6,6-tetramethyl-1,3-dihydropyridin-4-yl) butane-1,2,3,4-tetracarboxylate Chemical compound CC1(NC(C=C(C1)OC(=O)CC(C(CC(=O)OC=1CC(NC(C=1)(C)C)(C)C)C(=O)OC=1CC(NC(C=1)(C)C)(C)C)C(=O)OC=1CC(NC(C=1)(C)C)(C)C)(C)C)C MMJYBHUDYOHPOG-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229940113082 thymine Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- DXNCZXXFRKPEPY-UHFFFAOYSA-N tridecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCC(O)=O DXNCZXXFRKPEPY-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ILWRPSCZWQJDMK-UHFFFAOYSA-N triethylazanium;chloride Chemical compound Cl.CCN(CC)CC ILWRPSCZWQJDMK-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- UCPYLLCMEDAXFR-UHFFFAOYSA-N triphosgene Chemical compound ClC(Cl)(Cl)OC(=O)OC(Cl)(Cl)Cl UCPYLLCMEDAXFR-UHFFFAOYSA-N 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 229940035893 uracil Drugs 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/22—Polybenzoxazoles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Description
(A)成分としては、下記一般式(1)または一般式(2)に表される構造単位を含む樹脂が好ましい。また、これらの構造単位を有する2種以上の樹脂を含有しても構わないし、2種以上の構造単位を共重合したものであっても構わない。ただし、(A)成分は一般式(1)中のl+m≧1となる構造単位または、一般式(2)中のh+i≧1となる構造単位から選択される1以上の式で表される構造単位を、樹脂の構造単位中0.05mol%以上12mol%以下、好ましくは10mol%以下の割合で有する。中でも0.5mol%以上5mol%以下が好ましい。0.05mol%未満の場合、伸度と弾性率の向上効果が小さく、12mol%を超えると伸度および弾性率を向上させる効果が十分に得られない。また製造時のゲル化抑制が難しくなる場合がある。
一般式(1)中、X1はジ-、トリ-、テトラ-、ペンタ-、ヘキサ-、ヘプタ-、オクタ-またはデカカルボン酸残基またはその誘導体の残基に由来する。一般式(2)中、X2はテトラ-、ヘキサ-、オクタ-またはデカカルボン酸残基またはその誘導体の残基を示す(以下、これらを合わせて「酸残基」という)。また、この酸残基に対応する酸成分を重合時に用いることによって、これらの酸残基を構造単位に含ませることができる。X1を酸残基とする酸成分としては例えば、シクロブタンジカルボン酸、シクロヘキサンジカルボン酸、マロン酸、ジメチルマロン酸、エチルマロン酸、イソプロピルマロン酸、ジ-n-ブチルマロン酸、スクシン酸、テトラフルオロスクシン酸、メチルスクシン酸、2,2-ジメチルスクシン酸、2,3-ジメチルスクシン酸、ジメチルメチルスクシン酸、グルタル酸、ヘキサフルオログルタル酸、2-メチルグルタル酸、3-メチルグルタル酸、2,2-ジメチルグルタル酸、3,3-ジメチルグルタル酸、3-エチル-3-メチルグルタル酸、アジピン酸、オクタフルオロアジピン酸、3-メチルアジピン酸、オクタフルオロアジピン酸、ピメリン酸、2,2,6,6-テトラメチルピメリン酸、スベリン酸、ドデカフルオロスベリン酸、アゼライン酸、セバシン酸、ヘキサデカフルオロセバシン酸、1,9-ノナン二酸、ドデカン二酸、トリデカン二酸、テトラデカン二酸、ペンタデカン二酸、ヘキサデカン二酸、ヘプタデカン二酸、オクタデカン二酸、ノナデカン二酸、エイコサン二酸、ヘンエイコサン二酸、ドコサン二酸、トリコサン二酸、テトラコサン二酸、ペンタコサン二酸、ヘキサコサン二酸、ヘプタコサン二酸、オクタコサン二酸、ノナコサン二酸、トリアコンタン二酸、ヘントリアコンタン二酸、ドトリアコンタン二酸、ジグリコール酸などの脂肪族ジカルボン酸や、テレフタル酸、イソフタル酸、ジフェニルエーテルジカルボン酸、ビス(カルボキシフェニル)ヘキサフルオロプロパン、ビフェニルジカルボン酸、ベンゾフェノンジカルボン酸若しくはトリフェニルジカルボン酸などの芳香族ジカルボン酸、トリメリット酸、トリメシン酸、ジフェニルエーテルトリカルボン酸若しくはビフェニルトリカルボン酸等のトリカルボン酸あるいはピロメリット酸、3,3’,4,4’-ビフェニルテトラカルボン酸、2,3,3’,4’-ビフェニルテトラカルボン酸、2,2’,3,3’-ビフェニルテトラカルボン酸、3,3’,4,4’-ベンゾフェノンテトラカルボン酸、2,2’,3,3’-ベンゾフェノンテトラカルボン酸、2,2-ビス(3,4-ジカルボキシフェニル)ヘキサフルオロプロパン、2,2-ビス(2,3-ジカルボキシフェニル)ヘキサフルオロプロパン、1,1-ビス(3,4-ジカルボキシフェニル)エタン、1,1-ビス(2,3-ジカルボキシフェニル)エタン、ビス(3,4-ジカルボキシフェニル)メタン、ビス(2,3-ジカルボキシフェニル)メタン、ビス(3,4-ジカルボキシフェニル)スルホン、ビス(3,4-ジカルボキシフェニル)エーテル、1,2,5,6-ナフタレンテトラカルボン酸、2,3,6,7-ナフタレンテトラカルボン酸、2,3,5,6-ピリジンテトラカルボン酸若しくは3,4,9,10-ペリレンテトラカルボン酸等の芳香族テトラカルボン酸又はブタンテトラカルボン酸、シクロブタンテトラカルボン酸、1,2,3,4-シクロペンタンテトラカルボン酸、シクロヘキサンテトラカルボン酸、ビシクロ[2.2.1.]ヘプタンテトラカルボン酸、ビシクロ[3.3.1.]テトラカルボン酸、ビシクロ[3.1.1.]ヘプト-2-エンテトラカルボン酸、ビシクロ[2.2.2.]オクタンテトラカルボン酸若しくはアダマタンテトラカルボン酸等の脂肪族テトラカルボン酸等が挙げられる。また、5価以上の酸成分としては、以下のような化合物があげられる。
また、X1およびX2の酸残基の好ましい構造としては、例えば、下記のような構造又はこれら構造における1~4個の水素原子を炭素数1~20のアルキル基、フルオロアルキル基、アルコキシル基、エステル基、ニトロ基、シアノ基、フッ素原子若しくは塩素原子により置換した構造が挙げられる。
一般式(3)で表される構造を有するトリアミンとしては、トリス(4―アミノフェニル)アミン、1,3,5-トリス(4―アミノフェノキシ)ベンゼン、1,3,5-トリス(4―アミノフェニル)ベンゼン、トリス(4―アミノフェニル)メタン、1,1,1―トリス(4―アミノフェニル)エタン、2,4,6-トリス(4―アミノフェノキシ)-1,3,5-トリアジン、N2,N4,N6-トリス(4―アミノフェニル)-1,3,5-トリアジン-2,4,6トリアミンが挙げられる。
(A)成分の重量平均分子量(Mw)は、GPC(ゲルパーミエーションクロマトグラフィー)装置Waters2690-996(日本ウォーターズ(株)製)を用いて確認した。展開溶媒をN-メチル-2-ピロリドン(以降NMPと呼ぶ)として測定し、ポリスチレン換算で重量平均分子量(Mw)及び分散度(PDI=Mw/Mn)を計算した。
(2)-1 感度
ワニスをシリコンウエハにスピンコーター(ミカサ(株)製1H-360S)を用いてスピンコートした後、ホットプレート(大日本スクリーン製造(株)製SCW-636)を用いて120℃で3分間プリベークし、膜厚11μmのプリベーク膜を作製した。得られたプリベーク膜に、パラレルライトマスクアライナー(以下PLAという)(キヤノン(株)製PLA-501F)を用いて超高圧水銀灯を光源として、感度測定用のグレースケールマスク(2~50μmの、1:1のライン&スペースのパターンを有する)を介してコンタクトで露光した。その後、120℃で1分間露光後ベークをし、塗布現像装置MARK-7を用いて、ポリマーがアルカリ水溶液に溶解しない場合は現像液としてシクロペンタノンを用いて2分間シャワー現像し、ついでプロピレングリコールモノメチルエーテルアセテートで30秒間リンスした。ポリマーがアルカリ水溶液に溶解する場合は、現像液として2.38質量%水酸化テトラメチルアンモニウム(以下、「TMAH」と略す)水溶液(商品名「ELM-D」、三菱ガス化学(株)製)で90秒間パドル現像し、次いで水で30秒間リンスした。
なお、膜厚は大日本スクリーン製造(株)製ラムダエースSTM-602を用いて屈折率1.629で測定した。以下に記載する膜厚も同様である。
(2)-1で定義した感度での露光量における現像後の最小パターン寸法を測定した。
ワニスを、シリコンウエハ上に120℃で3分間プリベークを行った後の膜厚が10μmとなるように塗布現像装置MARK-7を用いてスピンコート法で塗布し、プリベークした後、PLAを用いて塗膜全面に300mJ/cm2を露光し、イナートオーブンCLH-21CD-Sを用いて、窒素気流下において酸素濃度20ppm以下で毎分3.5℃の昇温速度で230℃まで昇温し、230℃で1時間加熱処理を行なった。温度が50℃以下になったところでシリコンウエハを取り出し、その硬化膜を有機薬液(ジメチルスルホキシド:25%TMAH水溶液=92:2)に40℃で10分間浸漬させ、パターンの剥がれや溶出の有無を観察した。その結果が、パターンの剥がれや溶出なしの場合は良好として2、パターンの剥がれや溶出が観測された場合は不良として1、と評価した。
ワニスを6インチ(15.24cm)のシリコンウエハ上に、120℃で3分間のプリベーク後の膜厚が11μmとなるように塗布現像装置ACT-8を用いてスピンコート法で塗布およびプリベークした後、PLAを用いて全面に300mJ/cm2を露光し、イナートオーブンCLH-21CD-S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で230℃まで昇温し、230℃で1時間加熱処理を行なった。温度が50℃以下になったところでシリコンウエハを取り出し、45質量%のフッ化水素酸に5分間浸漬することで、ウエハより樹脂組成物の硬化膜を剥がした。この膜を幅1.5cm、長さ9cmの短冊状に切断し、テンシロンRTM-100((株)オリエンテック製)を用いて、室温23.0℃、湿度45.0%RH下で引張速度50mm/分で引っ張り(チャック間隔=2cm)、破断点伸度および弾性率の測定を行なった。測定は1検体につき10枚の短冊について行ない、結果から上位5点の平均値を求めた(有効数字=2桁)。
次の方法にて金属銅との密着性評価を行なった。
まず、厚さ約3μmの金属銅めっき基板上にワニスをスピンコート法で塗布し、次いでホットプレート(大日本スクリーン製造(株)製D-SPIN)を用いて120℃のホットプレートで3分ベークし、最終的に厚さ8μmのプリベーク膜を作製した。PLAを用いて全面に300mJ/cm2を露光し、この膜をイナートオーブンCLH-21CD-S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で230℃まで昇温し、230℃で1時間加熱処理を行なった。温度が50℃以下になったところで基板を取り出し、基板を2分割し、それぞれの基板についてキュア後の膜に片刃を使用して2mm間隔で10行10列の碁盤目状の切り込みをいれた。このうち一方のサンプル基板を用い、“セロテープ”(登録商標)による引き剥がしによって100マスのうち何マス剥がれたかで金属材料/樹脂硬化膜間の接着特性の評価を行なった。また、もう一方のサンプル基板については、プレッシャークッカー試験(PCT)装置(タバイエスペエック(株)製HAST CHAMBER EHS-211MD)を用いて121℃、2気圧の飽和条件で400時間PCT処理を行なった後、上記の引き剥がしテストを行なった。いずれの基板についても引き剥がしテストで剥がれ個数が0を極めて良好として4、1以上20未満を良好として3、20以上50未満を可として2、50以上を不良として1とした。
次の方法にて信頼性評価を行なった。
ワニスを6インチ(15.24cm)のシリコンウエハ上に、120℃で3分間のプリベーク後の膜厚が11μmとなるように塗布現像装置MARK-7を用いてスピンコート法で塗布およびプリベークした後、PLAを用いて全面に300mJ/cm2を露光し、PLAを用いてイナートオーブンCLH-21CD-S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で230℃まで昇温し、230℃で1時間加熱処理を行なった。温度が50℃以下になったところでウエハを取り出し、次に、高温保存試験機を用いて、150℃で500時間処理を行った。ウエハを取り出し、前述の「(4)伸度および弾性率の測定」記載の、フッ化水素酸処理以降の手順に従い伸度および強度の評価を実施した。
厚さ約3μmの金属銅めっき基板上にワニスをスピンナ(ミカサ(株)製)を用いてスピンコート法で塗布し、次いでホットプレート(大日本スクリーン製造(株)製D-SPIN)を用いて120℃のホットプレートで3分ベークし、最終的に厚さ8μmのプリベーク膜を作製した。PLAを用いて全面に300mJ/cm2を露光し、この膜をイナートオーブンCLH-21CD-S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で220℃まで昇温し、220℃で1時間加熱処理を行なった。温度が50℃以下になったところで基板を取り出し、キュア後の膜に片刃を使用して2mm間隔で10行10列の碁盤目状の切り込みをいれた。このサンプル基板について、高温保存試験機を用いて150℃で500時間加熱保存処理を行なった後、上記の引き剥がしテストを行なった。いずれの基板についても引き剥がしテストで剥がれ個数が0を極めて良好として4、1以上20未満を良好として3、20以上50未満を可として2、50以上を不良として1とした。
調製後のワニスの粘度および23℃下で2週間放置した後の粘度を測定し、放置前後の粘度の変化率を計算した。
放置前後の粘度の変化率が小さいほど保存安定性が良好であることを示す。
乾燥窒素気流下、3,4,4’-トリアミノジフェニルエーテル(東京化成工業(株)製)7.1g(0.033モル)とアリルグリシジルエーテル34.2g(0.3モル)をテトラヒドロフラン(THF)100gに溶解させ、-15℃に冷却した。ここにTHF50gに溶解させた無水トリメリット酸クロリド22.1g(0.11モル)を反応液の温度が0℃を越えないように滴下した。滴下終了後、0℃で4時間反応させた。この溶液をロータリーエバポレーターで濃縮して、トルエン1Lに投入し、濾別、乾燥を経て酸無水物(酸-1)を得た。
乾燥窒素気流下、TrisP-PA(商品名、本州化学工業(株)製)14.1g(0.033モル)と無水トリメリット酸クロリド22.1g(0.11モル)をTHF150gに溶解させ、5℃に冷却した。ここにTHF50gで希釈したトリエチルアミン11.1g(0.11モル)を反応液の温度が30℃を越えないように滴下した。滴下終了後、室温で4時間反応させた。この溶液を濾過しトリエチルアミンの塩酸塩を除去、濾液をロータリーエバポレーターで濃縮して、トルエン1Lに投入し、濾別、乾燥を経て酸無水物(酸-2)を得た。
4,4’-オキシジフタル酸二無水物(ODPA)31.02g(0.10mol)を500ml容量のセパラブルフラスコに入れ、2-ヒドロキシエチルメタクリレート(HEMA)を26.03g(0.20mol)とγ―ブチロラクトン76mlを入れて室温下で、撹拌しながらピリジン16.22g(0.21mol)を加えて反応混合物を得た。反応による発熱の終了後に室温まで放冷し、16時間放置した。
DAE仕込み量を16.52g(0.0825mol)、TAPOB仕込み量を2.00(0.005mol)に替えた以外は合成例1と同様にしてポリイミド前駆体P-2を得た。重量平均分子量(Mw)は35000、PDIは3.0であった。1H-および13C-2次元NMRより算出されたP-2中の、主鎖の分岐点となる構造単位は、全構造単位中で4.7mol%であった。
DAE仕込み量を15.02g(0.075mol)、TAPOB仕込み量を3.99(0.010mol)に替えた以外は合成例1と同様にしてポリイミド前駆体P-3を得た。重量平均分子量(Mw)は45000、PDIは4.0であった。1H-および13C-2次元NMRより算出されたP-3中の、主鎖の分岐点となる構造単位は、全構造単位中で9.5mol%であった。
TAPOBを、トリス(4―アミノフェニル)アミン(TAPA)0.29g(0.001mol)、に替えた以外は合成例1と同様にしてポリイミド前駆体P-4を得た。重量平均分子量(Mw)は28000、PDIは2.8であった。1H-および13C-2次元NMRより算出されたP-4中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
TAPOBを、2,4,6-トリス(4―アミノフェノキシ)-1,3,5-トリアジン(TAPT)0.40g(0.001mol)、に替えた以外は合成例1と同様にしてポリイミド前駆体P-5を得た。重量平均分子量(Mw)は26000、PDIは2.7であった。1H-および13C-2次元NMRより算出されたP-5中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
[合成例8 ポリイミド前駆体(P-6)の合成]
TAPOBを、3,4,4‘-トリアミノジフェニルエーテル(TADPE)0.22g(0.001mol)、に替えた以外は合成例1と同様にしてポリイミド前駆体P-6を得た。重量平均分子量(Mw)は27000、PDIは2.7であった。1H-および13C-2次元NMRより算出されたP-6中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
ODPAを、ODPA30.55g(0.0985mol)および合成例1で合成した「酸-1」0.74g(0.001mol)の混合物に替え、DAE仕込み量を18.02g(0.09mol)に替え、TAPOBを用いない変更を行い、合成例1と同様にしてポリイミド前駆体P-7を得た。重量平均分子量(Mw)は35000、PDIは2.9であった。1H-および13C-2次元NMRより算出されたP-7中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
[合成例10 ポリイミド前駆体(P-8)の合成]
ODPAを、ODPA30.55g(0.0985mol)および合成例2で合成した「酸-2」0.95g(0.001mol)の混合物に替え、DAE仕込み量を18.02g(0.09mol)に替え、TAPOBを用いない変更を行い、合成例1と同様にしてポリイミド前駆体P-8を得た。重量平均分子量(Mw)は27000、PDIは2.7であった。1H-および13C-2次元NMRより算出されたP-8中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
ODPAを、ODPA30.55g(0.0985mol)および合成例2で合成した「酸-2」0.95g(0.001mol)の混合物に替えた以外は合成例1と同様にしてポリイミド前駆体P-9を得た。重量平均分子量(Mw)は27000、PDIは2.7であった。1H-および13C-2次元NMRより算出されたP-9中の、主鎖の分岐点となる構造単位は、全構造単位中で1.8mol%であった。
DAEを2,2-ビス(3-アミノ-4-ヒドロキシフェニル)ヘキサフルオロプロパン(BAHF)32.39g(0.0885mol)に替えた以外は合成例1と同様にしてポリイミド前駆体P-10を得た。P-10はアルカリ水溶液に溶解するポリイミド前駆体である。重量平均分子量(Mw)は29000、PDIは2.5であった。1H-および13C-2次元NMRより算出されたP-10中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
乾燥窒素気流下、BAHF30.56g(0.0835mol)、TAPOB0.4g(0.001mol)、1,3-ビス(3-アミノプロピル)テトラメチルジシロキサン(SiDA)1.24g(0.005mol)、末端封止剤として、3-アミノフェノール(MAP)(東京化成工業(株)製)2.18g(0.02mol)をNMP100gに溶解させた。ここにODPA31.02g(0.1mol)をNMP30gとともに加えて、20℃で1時間反応させ、次いで50℃で4時間反応させた。その後、180℃5時間撹拌した。撹拌終了後、溶液を水3Lに投入して白色沈殿を集めた。この沈殿をろ過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥して粉末状のポリイミド(P-11)を得た。重量平均分子量(Mw)は26000、PDIは2.6であった。P-11はアルカリ水溶液に溶解するポリイミドである。P-11のイミド化率(イミド閉環率)を下記に示す公知の方法で測定したところ、100%であった。1H-および13C-2次元NMRより算出されたP-11中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
上記のイミド化率(RIM(%))は、以下の方法で容易に求めることができる。まず、ポリマーの赤外吸収スペクトルを測定し、ポリイミドに起因するイミド構造の吸収ピーク(1780cm-1付近、1377cm-1付近)の存在を確認し、1377cm-1付近のピーク強度(X)を求める。次に、そのポリマーを350℃で1時間熱処理し、赤外吸収スペクトルを測定し、1377cm-1付近のピーク強度(Y)を求める。これらのピーク強度比が熱処理前ポリマー中のイミド基の含量、すなわちイミド化率に相当する(RIM=X/Y×100(%))。
乾燥窒素気流下、BAHF34.25g(0.0935mol)、TAPOB0.4g(0.001mol)をNMP210gに溶解させた。ここに、1,1’-(4,4’-オキシベンゾイル)ジイミダゾール(PBOM)32.25g(0.09mol)をNMP20gとともに加えて、85℃で3時間反応させた。続いて、SiDA1.24g(0.0050mol)をNMP10gとともに加えて、85℃で1時間反応させた。さらに、末端封止剤として、5-ノルボルネン-2,3-ジカルボン酸無水物(NA)3.28g(0.02モル)をNMP10gとともに加えて、85℃で30分反応させた。反応終了後、室温まで冷却し、酢酸(54.02g、0.90モル)をNMP50gとともに加えて、室温で1時間攪拌した。攪拌終了後、溶液を水3Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリヒドロキシアミド(P-12)の粉末を得た。重量平均分子量は40,000、PDIは2.2であった。1H-および13C-2次元NMRより算出されたP-12中の、主鎖の分岐点となる構造単位は、全構造単位中で0.9mol%であった。
DAE仕込み量を10.01g(0.05mol)、TAPOB仕込み量を7.99g(0.02mol)に替えた以外は合成例1と同様にしてポリイミド前駆体P-13を得た。重量平均分子量(Mw)は55000、PDIは5.0であった。1H-および13C-2次元NMRより算出されたP-13中の、主鎖の分岐点となる構造単位は、全構造単位中で18.2mol%であった。
DAE仕込み量を18.02g(0.09mol)に替え、TAPOBを添加しない以外は合成例1と同様にしてポリイミド前駆体P-14を得た。重量平均分子量(Mw)は25000、PDIは2.2であった。
BAHF仕込み量を31.11g(0.085mol)に替え、TAPOBを添加しない以外は合成例13と同様にしてポリイミドP-15を得た。重量平均分子量(Mw)は25000、PDIは2.2であった。
BAHF仕込み量を34.79g(0.095mol)に替え、TAPOBを添加しない以外は合成例14と同様にしてポリヒドロキシアミドP-16を得た。重量平均分子量(Mw)は35000、PDIは2.4であった。
DAE仕込み量を14.42g(0.072mol)、TAPOB仕込み量を4.27(0.012mol)に替えた以外は合成例1と同様にしてポリイミド前駆体P-17を得た。重量平均分子量(Mw)は40000、PDIは4.2であった。1H-および13C-2次元NMRより算出されたP-17中の、主鎖の分岐点となる構造単位は、全構造単位中で11.5mol%であった。
黄色灯下にて、ポリイミド前駆体(P-1)10.00g、1,2-オクタンジオン,1-[4-(フェニルチオ)-2-(O-ベンゾイルオキシム)](「イルガキュアOXE-01(商品名)」BASF製)(OXE-01)0.50g、NKエステル 4G(商品名)(新中村化学工業(株)製、化学名:テトラエチレングリコールジメタクリレート)(4G)2.00g、N-フェニルジエタノールアミン1.00g、3-トリメトキシシリルフタルアミド酸0.30gを、N-メチルピロリドン(NMP)15.15gおよび乳酸エチル(EL)3.81gに溶解させ、アクリル系界面活性剤である「ポリフロー77(商品名)」(共栄社化学(株)製)(ポリフロー77)の1質量%EL溶液0.10gを加え、撹拌してワニスを得た。得られたワニスの特性を上記評価方法により測定した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-2)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-3)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-4)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-5)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-6)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-7)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-8)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-9)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-10)に替え、N-フェニルジエタノールアミンを添加しない以外は実施例1と同様に実施した。
[実施例11]
黄色灯下にて、ポリイミド(P-11)10.00g、OXE-01 0.50g、ライトアクリレート DCP-A(商品名)(共栄社化学(株)製、化学名:ジシクロペンタジエンジアクリレート)2.00g、ライトアクリレート BP-6EM(商品名)(共栄社化学(株)製、化学名:ビスフェノールAのエチレンオキサイド付加物ジアクリレート)(BP-6EM)2.00g、ビニルトリメトキシシラン0.30gを、NMP16.25gおよびEL4.08gに溶解させ、ポリフロー77の1質量%EL溶液0.10gを加え、撹拌してワニスを得た。得られたワニスの特性を上記評価方法により測定した。
ポリイミド(P-11)をポリヒドロキシアミド(P-12)に替えた以外は実施例11と同様に実施した。
ヒンダードフェノール化合物IRGANOX245(商品名)(BASF製)(IRGANOX245)0.3gをさらに加える以外は、実施例1と同様に実施した。
5-メチル-1H-ベンゾトリアゾール0.02gをさらに加える以外は、実施例1と同様に実施した。
IRGANOX2450.3gおよび5-メチル-1H-ベンゾトリアゾール0.02gをさらに加える以外は、実施例1と同様に実施した。
オルトギ酸エチル2.0gをさらに加える以外は、実施例1と同様に実施した。
[実施例17]
ポリイミド前駆体(P-1)をポリイミド前駆体(P-17)に替えた以外は実施例1と同様に実施した。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-13)に替えた以外は実施例1と同様に実施した。ただし、現像不良のため感度および解像度については評価しなかった。
ポリイミド前駆体(P-1)をポリイミド前駆体(P-14)に替えた以外は実施例1と同様に実施した。
ポリイミド(P-11)をポリイミド(P-15)に替えた以外は実施例11と同様に実施した。
ポリイミド(P-11)をポリヒドロキシアミド(P-16)に替えた以外は実施例11と同様に実施した。
2 Alパッド
3 パッシベーション膜
4 絶縁膜
5 金属(Cr、Ti等)膜
6 金属配線(Al、Cu等)
7 絶縁膜
8 バリアメタル
9 スクライブライン
10 ハンダバンプ
11 シリコンウエハ
12 1層目(柱層)
13 2層目(屋根層)
Claims (14)
- (A)主鎖に分岐を有するポリイミド、ポリベンゾオキサゾールおよびそれらの前駆体から選択される1種類以上の樹脂、(B)光重合開始剤および(C)2以上のエチレン性不飽和結合を有する化合物を含有し、該(A)樹脂中の主鎖の分岐点となる構造単位が、全構造単位中0.05mol%以上12mol%以下の割合であり、前記(A)樹脂の重量平均分子量が5,000以上100,000以下である、感光性樹脂組成物。
- 前記(A)樹脂の主鎖の分岐点となる構造単位として、下記一般式(1)および(2)から選ばれる少なくとも1種類以上の構造単位を含有する、請求項1記載の感光性樹脂組成物。
- 前記(A)樹脂の主鎖の分岐点となる構造単位が、(a-1)3価以上のアミン化合物由来の構造単位を含有する、請求項1または2に記載の感光性樹脂組成物。
- さらに、(D)オルトカルボン酸エステル化合物を含有する請求項1~4のいずれかに記載の感光性樹脂組成物。
- さらに、(E)酸化防止剤を含有する請求項1~5のいずれかに記載の感光性樹脂組成物。
- さらに、(F)窒素原子を含む複素環化合物を含有する請求項1~6のいずれかに記載の感光性樹脂組成物。
- 請求項1~7のいずれかに記載の感光性樹脂組成物から形成された感光性シート。
- 請求項1~7のいずれかに記載の感光性樹脂組成物、または請求項8に記載の感光性シートを硬化した硬化膜。
- 請求項1~7のいずれかに記載の感光性樹脂組成物、または請求項8に記載の感光性シートを用いて硬化膜を製造する方法であって、
前記感光性樹脂組成物を基板上に塗布し、または前記感光性シートを基板上にラミネートし、乾燥して感光性樹脂膜を形成する工程と、前記感光性樹脂膜を露光する工程と、露光後の感光性樹脂膜を加熱処理する工程と、熱処理後の感光性樹脂膜を現像する工程と、現像後の感光性樹脂膜を加熱処理する工程とを含む、硬化膜の製造方法。 - 請求項9に記載の硬化膜を有する中空構造体。
- 請求項11記載の中空構造体を有する電子部品。
- 請求項9に記載の硬化膜のレリーフパターン層を有する、電子部品。
- 請求項9に記載の硬化膜が再配線間の層間絶縁膜として配置された、電子部品。
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