KR102894616B1 - 표면 처리 장치 및 반도체 장치의 제조장치 - Google Patents

표면 처리 장치 및 반도체 장치의 제조장치

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Publication number
KR102894616B1
KR102894616B1 KR1020237010403A KR20237010403A KR102894616B1 KR 102894616 B1 KR102894616 B1 KR 102894616B1 KR 1020237010403 A KR1020237010403 A KR 1020237010403A KR 20237010403 A KR20237010403 A KR 20237010403A KR 102894616 B1 KR102894616 B1 KR 102894616B1
Authority
KR
South Korea
Prior art keywords
bonding
temperature
support base
chip
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237010403A
Other languages
English (en)
Korean (ko)
Other versions
KR20230054731A (ko
Inventor
히로시 기쿠치
킨 리
테츠오 다카노
Original Assignee
야마하 로보틱스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20230054731A publication Critical patent/KR20230054731A/ko
Application granted granted Critical
Publication of KR102894616B1 publication Critical patent/KR102894616B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H01L24/75—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H01L24/80—
    • H01L24/97—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07152—Means for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07173—Means for moving chips, wafers or other parts, e.g. conveyor belts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H01L2224/75501—
    • H01L2224/75821—
    • H01L2224/80001—
    • H01L2224/80894—
    • H01L2224/80897—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
KR1020237010403A 2020-10-05 2020-10-05 표면 처리 장치 및 반도체 장치의 제조장치 Active KR102894616B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/037776 WO2022074719A1 (ja) 2020-10-05 2020-10-05 表面処理装置および半導体装置の製造装置

Publications (2)

Publication Number Publication Date
KR20230054731A KR20230054731A (ko) 2023-04-25
KR102894616B1 true KR102894616B1 (ko) 2025-12-02

Family

ID=81126739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237010403A Active KR102894616B1 (ko) 2020-10-05 2020-10-05 표면 처리 장치 및 반도체 장치의 제조장치

Country Status (6)

Country Link
US (1) US12489004B2 (https=)
EP (1) EP4227980A4 (https=)
JP (1) JP7470457B2 (https=)
KR (1) KR102894616B1 (https=)
CN (1) CN116325100A (https=)
WO (1) WO2022074719A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022150172A (ja) * 2021-03-26 2022-10-07 株式会社ディスコ ウエーハの貼り合わせ方法
FR3144695B1 (fr) * 2022-12-28 2026-04-03 Commissariat Energie Atomique Procédé de collage hybride direct de puce à plaque
JP2024097401A (ja) * 2023-01-06 2024-07-19 ヤマハロボティクスホールディングス株式会社 半導体チップのアライメント方法、接合方法、半導体装置、並びに電子部品製造システム
JP7659910B2 (ja) * 2023-04-24 2025-04-10 ヤマハロボティクスホールディングス株式会社 プラズマ処理方法及び接合システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015211130A (ja) * 2014-04-25 2015-11-24 ボンドテック株式会社 基板接合装置および基板接合方法
WO2017155002A1 (ja) * 2016-03-11 2017-09-14 ボンドテック株式会社 基板接合方法
US20190326252A1 (en) * 2018-04-20 2019-10-24 Invensas Bonding Technologies, Inc. Dbi to si bonding for simplified handle wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012175043A (ja) 2011-02-24 2012-09-10 Tokyo Electron Ltd 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP2013243333A (ja) * 2012-04-24 2013-12-05 Tadatomo Suga チップオンウエハ接合方法及び接合装置並びにチップとウエハとを含む構造体
JP6337400B2 (ja) 2012-04-24 2018-06-06 須賀　唯知 チップオンウエハ接合方法及び接合装置並びにチップとウエハとを含む構造体
US9870922B2 (en) 2014-04-25 2018-01-16 Tadatomo Suga Substrate bonding apparatus and substrate bonding method
JP6448858B2 (ja) * 2016-09-30 2019-01-09 ボンドテック株式会社 基板接合方法および基板接合装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015211130A (ja) * 2014-04-25 2015-11-24 ボンドテック株式会社 基板接合装置および基板接合方法
WO2017155002A1 (ja) * 2016-03-11 2017-09-14 ボンドテック株式会社 基板接合方法
US20190326252A1 (en) * 2018-04-20 2019-10-24 Invensas Bonding Technologies, Inc. Dbi to si bonding for simplified handle wafer

Also Published As

Publication number Publication date
JP7470457B2 (ja) 2024-04-18
JPWO2022074719A1 (https=) 2022-04-14
EP4227980A1 (en) 2023-08-16
US20230369079A1 (en) 2023-11-16
WO2022074719A1 (ja) 2022-04-14
EP4227980A4 (en) 2024-09-25
KR20230054731A (ko) 2023-04-25
CN116325100A (zh) 2023-06-23
US12489004B2 (en) 2025-12-02

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