KR102842000B1 - 증발원 장치, 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법 - Google Patents

증발원 장치, 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법

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Publication number
KR102842000B1
KR102842000B1 KR1020190168646A KR20190168646A KR102842000B1 KR 102842000 B1 KR102842000 B1 KR 102842000B1 KR 1020190168646 A KR1020190168646 A KR 1020190168646A KR 20190168646 A KR20190168646 A KR 20190168646A KR 102842000 B1 KR102842000 B1 KR 102842000B1
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KR
South Korea
Prior art keywords
heater
region
deposition material
container
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020190168646A
Other languages
English (en)
Korean (ko)
Other versions
KR20200136801A (ko
Inventor
유키 스가와라
요시아키 카자마
Original Assignee
캐논 톡키 가부시키가이샤
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Publication of KR20200136801A publication Critical patent/KR20200136801A/ko
Application granted granted Critical
Publication of KR102842000B1 publication Critical patent/KR102842000B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020190168646A 2019-05-28 2019-12-17 증발원 장치, 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법 Active KR102842000B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-099034 2019-05-28
JP2019099034A JP7202971B2 (ja) 2019-05-28 2019-05-28 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20200136801A KR20200136801A (ko) 2020-12-08
KR102842000B1 true KR102842000B1 (ko) 2025-08-01

Family

ID=73506948

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190168646A Active KR102842000B1 (ko) 2019-05-28 2019-12-17 증발원 장치, 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법

Country Status (3)

Country Link
JP (1) JP7202971B2 (enExample)
KR (1) KR102842000B1 (enExample)
CN (1) CN112011761A (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3853587B2 (ja) 2000-10-19 2006-12-06 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP4916385B2 (ja) 2007-06-11 2012-04-11 キヤノン株式会社 有機発光素子の製造方法及び蒸着装置
JP2011162846A (ja) 2010-02-10 2011-08-25 Mitsubishi Heavy Ind Ltd 真空蒸発源
JP2014070227A (ja) * 2012-09-27 2014-04-21 Hitachi High-Technologies Corp 成膜装置とその蒸発源の温度制御方法及び温度制御装置
KR101499054B1 (ko) * 2013-07-23 2015-03-06 (주)알파플러스 내부 오염 방지형 진공 증발원
KR20150061297A (ko) * 2013-11-27 2015-06-04 주식회사 에스에프에이 증발 소스 및 그를 구비하는 평판표시소자의 증발 장치
CN206916210U (zh) * 2017-07-03 2018-01-23 京东方科技集团股份有限公司 坩埚、蒸发源及蒸镀设备
JP6436544B1 (ja) * 2017-08-07 2018-12-12 キヤノントッキ株式会社 蒸発源装置およびその制御方法
JP6686069B2 (ja) * 2018-05-29 2020-04-22 キヤノントッキ株式会社 蒸発源装置、蒸着装置、および蒸着システム

Also Published As

Publication number Publication date
KR20200136801A (ko) 2020-12-08
JP2020193360A (ja) 2020-12-03
JP7202971B2 (ja) 2023-01-12
CN112011761A (zh) 2020-12-01

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