JP7202971B2 - 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 - Google Patents

蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 Download PDF

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Publication number
JP7202971B2
JP7202971B2 JP2019099034A JP2019099034A JP7202971B2 JP 7202971 B2 JP7202971 B2 JP 7202971B2 JP 2019099034 A JP2019099034 A JP 2019099034A JP 2019099034 A JP2019099034 A JP 2019099034A JP 7202971 B2 JP7202971 B2 JP 7202971B2
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Japan
Prior art keywords
heater
region
evaporation source
source device
vapor deposition
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JP2019099034A
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English (en)
Japanese (ja)
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JP2020193360A (ja
JP2020193360A5 (enExample
Inventor
由季 菅原
良秋 風間
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2019099034A priority Critical patent/JP7202971B2/ja
Priority to KR1020190168646A priority patent/KR102842000B1/ko
Priority to CN201911305385.1A priority patent/CN112011761A/zh
Publication of JP2020193360A publication Critical patent/JP2020193360A/ja
Publication of JP2020193360A5 publication Critical patent/JP2020193360A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019099034A 2019-05-28 2019-05-28 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 Active JP7202971B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019099034A JP7202971B2 (ja) 2019-05-28 2019-05-28 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法
KR1020190168646A KR102842000B1 (ko) 2019-05-28 2019-12-17 증발원 장치, 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법
CN201911305385.1A CN112011761A (zh) 2019-05-28 2019-12-18 蒸发源装置、成膜装置、成膜方法及电子器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019099034A JP7202971B2 (ja) 2019-05-28 2019-05-28 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2020193360A JP2020193360A (ja) 2020-12-03
JP2020193360A5 JP2020193360A5 (enExample) 2022-03-10
JP7202971B2 true JP7202971B2 (ja) 2023-01-12

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JP2019099034A Active JP7202971B2 (ja) 2019-05-28 2019-05-28 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法

Country Status (3)

Country Link
JP (1) JP7202971B2 (enExample)
KR (1) KR102842000B1 (enExample)
CN (1) CN112011761A (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124479A (ja) 2000-10-19 2002-04-26 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2008305735A (ja) 2007-06-11 2008-12-18 Canon Inc 有機発光素子の製造方法及び蒸着装置
JP2011162846A (ja) 2010-02-10 2011-08-25 Mitsubishi Heavy Ind Ltd 真空蒸発源
JP2019031705A (ja) 2017-08-07 2019-02-28 キヤノントッキ株式会社 蒸発源装置およびその制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014070227A (ja) * 2012-09-27 2014-04-21 Hitachi High-Technologies Corp 成膜装置とその蒸発源の温度制御方法及び温度制御装置
KR101499054B1 (ko) * 2013-07-23 2015-03-06 (주)알파플러스 내부 오염 방지형 진공 증발원
KR20150061297A (ko) * 2013-11-27 2015-06-04 주식회사 에스에프에이 증발 소스 및 그를 구비하는 평판표시소자의 증발 장치
CN206916210U (zh) * 2017-07-03 2018-01-23 京东方科技集团股份有限公司 坩埚、蒸发源及蒸镀设备
JP6686069B2 (ja) * 2018-05-29 2020-04-22 キヤノントッキ株式会社 蒸発源装置、蒸着装置、および蒸着システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124479A (ja) 2000-10-19 2002-04-26 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2008305735A (ja) 2007-06-11 2008-12-18 Canon Inc 有機発光素子の製造方法及び蒸着装置
JP2011162846A (ja) 2010-02-10 2011-08-25 Mitsubishi Heavy Ind Ltd 真空蒸発源
JP2019031705A (ja) 2017-08-07 2019-02-28 キヤノントッキ株式会社 蒸発源装置およびその制御方法

Also Published As

Publication number Publication date
KR102842000B1 (ko) 2025-08-01
JP2020193360A (ja) 2020-12-03
KR20200136801A (ko) 2020-12-08
CN112011761A (zh) 2020-12-01

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