KR102806076B1 - 포토닉스 구조 광 신호 전송 영역 제조 - Google Patents
포토닉스 구조 광 신호 전송 영역 제조 Download PDFInfo
- Publication number
- KR102806076B1 KR102806076B1 KR1020207031496A KR20207031496A KR102806076B1 KR 102806076 B1 KR102806076 B1 KR 102806076B1 KR 1020207031496 A KR1020207031496 A KR 1020207031496A KR 20207031496 A KR20207031496 A KR 20207031496A KR 102806076 B1 KR102806076 B1 KR 102806076B1
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- KR
- South Korea
- Prior art keywords
- layer
- optical signal
- signal transmission
- layer formed
- transmission region
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- H01L21/4857—
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- H01L21/486—
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- H01L21/76202—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Woven Fabrics (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862653232P | 2018-04-05 | 2018-04-05 | |
| US62/653,232 | 2018-04-05 | ||
| US16/372,763 US10816724B2 (en) | 2018-04-05 | 2019-04-02 | Fabricating photonics structure light signal transmission regions |
| US16/372,763 | 2019-04-02 | ||
| PCT/US2019/025503 WO2019195367A1 (en) | 2018-04-05 | 2019-04-03 | Fabricating photonics structure light signal transmission regions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210036865A KR20210036865A (ko) | 2021-04-05 |
| KR102806076B1 true KR102806076B1 (ko) | 2025-05-09 |
Family
ID=68095974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207031496A Active KR102806076B1 (ko) | 2018-04-05 | 2019-04-03 | 포토닉스 구조 광 신호 전송 영역 제조 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10816724B2 (https=) |
| EP (1) | EP3776031B1 (https=) |
| JP (1) | JP2021519948A (https=) |
| KR (1) | KR102806076B1 (https=) |
| SG (1) | SG11202009806YA (https=) |
| TW (1) | TWI776040B (https=) |
| WO (1) | WO2019195367A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019195441A1 (en) | 2018-04-04 | 2019-10-10 | The Research Foundation For The State University Of New York | Heterogeneous structure on an integrated photonics platform |
| TWI851601B (zh) | 2018-11-21 | 2024-08-11 | 紐約州立大學研究基金會 | 光子光電系統及其製造方法 |
| TWI829761B (zh) | 2018-11-21 | 2024-01-21 | 紐約州立大學研究基金會 | 具有積體雷射的光學結構 |
| US11550099B2 (en) | 2018-11-21 | 2023-01-10 | The Research Foundation For The State University Of New York | Photonics optoelectrical system |
| KR20220086548A (ko) | 2019-06-18 | 2022-06-23 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | 포토닉스 구조 도전성 광 경로 제조 |
| US20210126425A1 (en) * | 2019-10-24 | 2021-04-29 | Advanced Semiconductor Engineering, Inc. | Optoelectronic package and manufacturing method thereof |
| US11243350B2 (en) | 2020-03-12 | 2022-02-08 | Globalfoundries U.S. Inc. | Photonic devices integrated with reflectors |
| US11531159B2 (en) | 2020-06-19 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical waveguide apparatus and method of fabrication thereof |
| US12147083B2 (en) * | 2020-12-16 | 2024-11-19 | Intel Corporation | Hybrid manufacturing for integrating photonic and electronic components |
| US11500151B2 (en) * | 2021-02-22 | 2022-11-15 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and method of making |
| US11569268B1 (en) * | 2021-08-05 | 2023-01-31 | Globalfoundries U.S. Inc. | Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor |
| US11835764B2 (en) * | 2022-01-31 | 2023-12-05 | Globalfoundries U.S. Inc. | Multiple-core heterogeneous waveguide structures including multiple slots |
| US20240377660A1 (en) * | 2023-05-11 | 2024-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical devices and methods of manufacture |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004253780A (ja) * | 2003-01-31 | 2004-09-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2017009636A (ja) * | 2015-06-17 | 2017-01-12 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US20170139142A1 (en) * | 2015-11-13 | 2017-05-18 | Cisco Technology, Inc. | Photonic chip with an evanescent coupling interface |
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| US11378739B2 (en) | 2022-07-05 |
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| TWI776040B (zh) | 2022-09-01 |
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| US20200379173A1 (en) | 2020-12-03 |
| SG11202009806YA (en) | 2020-11-27 |
| EP3776031C0 (en) | 2024-11-13 |
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