KR102801187B1 - 광학 소자, 촬상 소자 및 촬상장치 - Google Patents

광학 소자, 촬상 소자 및 촬상장치 Download PDF

Info

Publication number
KR102801187B1
KR102801187B1 KR1020237017916A KR20237017916A KR102801187B1 KR 102801187 B1 KR102801187 B1 KR 102801187B1 KR 1020237017916 A KR1020237017916 A KR 1020237017916A KR 20237017916 A KR20237017916 A KR 20237017916A KR 102801187 B1 KR102801187 B1 KR 102801187B1
Authority
KR
South Korea
Prior art keywords
pixel
light
structures
pixels
transparent layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237017916A
Other languages
English (en)
Korean (ko)
Other versions
KR20230093325A (ko
Inventor
마사시 미야타
나루 네모토
후미히데 코바야시
토시카즈 하시모토
Original Assignee
니폰 덴신 덴와 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니폰 덴신 덴와 가부시끼가이샤 filed Critical 니폰 덴신 덴와 가부시끼가이샤
Publication of KR20230093325A publication Critical patent/KR20230093325A/ko
Application granted granted Critical
Publication of KR102801187B1 publication Critical patent/KR102801187B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Color Television Image Signal Generators (AREA)
KR1020237017916A 2020-11-30 2020-11-30 광학 소자, 촬상 소자 및 촬상장치 Active KR102801187B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/044560 WO2022113362A1 (ja) 2020-11-30 2020-11-30 光学素子、撮像素子及び撮像装置

Publications (2)

Publication Number Publication Date
KR20230093325A KR20230093325A (ko) 2023-06-27
KR102801187B1 true KR102801187B1 (ko) 2025-04-29

Family

ID=81754186

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237017916A Active KR102801187B1 (ko) 2020-11-30 2020-11-30 광학 소자, 촬상 소자 및 촬상장치

Country Status (6)

Country Link
US (1) US20240006440A1 (https=)
EP (1) EP4242702B1 (https=)
JP (2) JP7574859B2 (https=)
KR (1) KR102801187B1 (https=)
CN (1) CN116529637B (https=)
WO (1) WO2022113362A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022113363A1 (ja) * 2020-11-30 2022-06-02 日本電信電話株式会社 光学素子、撮像素子及び撮像装置
WO2025070228A1 (ja) * 2023-09-27 2025-04-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250151435A1 (en) * 2023-11-03 2025-05-08 Visera Technologies Company Limited Solid-state image sensor
US20250297855A1 (en) * 2024-03-21 2025-09-25 Kla Corporation System and method for device-like overlay targets measurement
WO2025258002A1 (ja) * 2024-06-12 2025-12-18 Ｎｔｔ株式会社 撮像素子および撮像装置
WO2026028602A1 (ja) * 2024-07-30 2026-02-05 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019184986A (ja) * 2018-04-17 2019-10-24 日本電信電話株式会社 カラー撮像素子および撮像装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101067A1 (ja) * 2004-04-13 2005-10-27 Matsushita Electric Industrial Co., Ltd. 集光素子および固体撮像装置
KR100998098B1 (ko) * 2004-06-22 2010-12-02 니폰덴신뎅와 가부시키가이샤 광학 재료, 광학 렌즈 및 프리즘
EP1785750A1 (en) * 2004-09-01 2007-05-16 Matsushita Electric Industrial Co., Ltd. Condensing element, solid-state imaging device and method for fabricating the same
US8384818B2 (en) 2008-06-18 2013-02-26 Panasonic Corporation Solid-state imaging device including arrays of optical elements and photosensitive cells
TWI424200B (zh) * 2008-12-31 2014-01-21 Ind Tech Res Inst 色彩分離光學元件以及所應用的影像裝置
CN102160180A (zh) * 2009-07-24 2011-08-17 松下电器产业株式会社 摄像装置以及固体摄像元件
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US10790325B2 (en) * 2015-07-29 2020-09-29 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
JP7062366B2 (ja) * 2017-03-03 2022-05-06 株式会社ジャパンディスプレイ 表示装置、表示方法及び色分離素子
JP2018207035A (ja) * 2017-06-08 2018-12-27 凸版印刷株式会社 固体撮像素子
JP6981496B2 (ja) 2018-04-17 2021-12-15 日本電信電話株式会社 カラー撮像素子および撮像装置
JP6857163B2 (ja) 2018-09-26 2021-04-14 日本電信電話株式会社 偏光イメージング撮像システム
US20200301053A1 (en) * 2019-03-20 2020-09-24 Coherent AI LLC Optical sensing device employing light intensity detectors integrated with nanostructures
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor
US11640645B2 (en) * 2019-10-25 2023-05-02 Samsung Electronics Co., Ltd. Apparatus and method of acquiring image by employing color separation lens array
CN114447007A (zh) 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括该图像传感器的电子设备
WO2022113363A1 (ja) * 2020-11-30 2022-06-02 日本電信電話株式会社 光学素子、撮像素子及び撮像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019184986A (ja) * 2018-04-17 2019-10-24 日本電信電話株式会社 カラー撮像素子および撮像装置

Also Published As

Publication number Publication date
JPWO2022113362A1 (https=) 2022-06-02
WO2022113362A1 (ja) 2022-06-02
JP7574859B2 (ja) 2024-10-29
EP4242702B1 (en) 2026-04-15
CN116529637A (zh) 2023-08-01
EP4242702A4 (en) 2024-07-17
EP4242702A1 (en) 2023-09-13
JP2024180638A (ja) 2024-12-26
US20240006440A1 (en) 2024-01-04
JP7852689B2 (ja) 2026-04-28
KR20230093325A (ko) 2023-06-27
CN116529637B (zh) 2025-05-13

Similar Documents

Publication Publication Date Title
KR102801187B1 (ko) 광학 소자, 촬상 소자 및 촬상장치
KR102909206B1 (ko) 다층 메타 렌즈 및 이를 포함하는 광학 장치
KR102801193B1 (ko) 광학 소자, 촬상 소자 및 촬상장치
KR20200029572A (ko) 컬러촬상소자 및 촬상장치
KR102832511B1 (ko) 분광소자 어레이, 촬상소자 및 촬상장치
KR102831769B1 (ko) 광학 소자, 촬상 소자 및 촬상장치
JP7635787B2 (ja) 光学素子、撮像素子及び撮像装置
CN116391139B (zh) 光学元件、摄像元件以及摄像装置
US9257469B2 (en) Color imaging device
EP4212925B1 (en) Imaging element and imaging device
US12622079B2 (en) Optical element, image sensor and imaging device for wavwlength-dependent focusing of visible and near-infrared light
US20250366235A1 (en) Optical element, image sensor and imaging device
WO2025258002A1 (ja) 撮像素子および撮像装置

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R11 Change to the name of applicant or owner or transfer of ownership requested

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R11-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)

R13 Change to the name of applicant or owner recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R13-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)