JP7574859B2 - 撮像素子及び撮像装置 - Google Patents

撮像素子及び撮像装置 Download PDF

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Publication number
JP7574859B2
JP7574859B2 JP2022565015A JP2022565015A JP7574859B2 JP 7574859 B2 JP7574859 B2 JP 7574859B2 JP 2022565015 A JP2022565015 A JP 2022565015A JP 2022565015 A JP2022565015 A JP 2022565015A JP 7574859 B2 JP7574859 B2 JP 7574859B2
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pixel
structures
light
pixels
transparent layer
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Japanese (ja)
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JPWO2022113362A1 (https=
JPWO2022113362A5 (https=
Inventor
将司 宮田
成 根本
史英 小林
俊和 橋本
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NTT Inc
NTT Inc USA
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Nippon Telegraph and Telephone Corp
NTT Inc USA
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Priority to JP2024182258A priority Critical patent/JP7852689B2/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/201Filters in the form of arrays
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Color Television Image Signal Generators (AREA)
JP2022565015A 2020-11-30 2020-11-30 撮像素子及び撮像装置 Active JP7574859B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024182258A JP7852689B2 (ja) 2020-11-30 2024-10-17 撮像素子及び撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/044560 WO2022113362A1 (ja) 2020-11-30 2020-11-30 光学素子、撮像素子及び撮像装置

Related Child Applications (1)

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JP2024182258A Division JP7852689B2 (ja) 2020-11-30 2024-10-17 撮像素子及び撮像装置

Publications (3)

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JPWO2022113362A1 JPWO2022113362A1 (https=) 2022-06-02
JPWO2022113362A5 JPWO2022113362A5 (https=) 2023-06-08
JP7574859B2 true JP7574859B2 (ja) 2024-10-29

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JP2024182258A Active JP7852689B2 (ja) 2020-11-30 2024-10-17 撮像素子及び撮像装置

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US (1) US20240006440A1 (https=)
EP (1) EP4242702B1 (https=)
JP (2) JP7574859B2 (https=)
KR (1) KR102801187B1 (https=)
CN (1) CN116529637B (https=)
WO (1) WO2022113362A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022113363A1 (ja) * 2020-11-30 2022-06-02 日本電信電話株式会社 光学素子、撮像素子及び撮像装置
WO2025070228A1 (ja) * 2023-09-27 2025-04-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250151435A1 (en) * 2023-11-03 2025-05-08 Visera Technologies Company Limited Solid-state image sensor
US20250297855A1 (en) * 2024-03-21 2025-09-25 Kla Corporation System and method for device-like overlay targets measurement
WO2025258002A1 (ja) * 2024-06-12 2025-12-18 Ntt株式会社 撮像素子および撮像装置
WO2026028602A1 (ja) * 2024-07-30 2026-02-05 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010156942A (ja) 2008-12-31 2010-07-15 Ind Technol Res Inst 色分離光学装置およびそれを応用した画像装置
JP2018146750A (ja) 2017-03-03 2018-09-20 株式会社ジャパンディスプレイ 表示装置、表示方法及び色分離素子
JP2019184986A (ja) 2018-04-17 2019-10-24 日本電信電話株式会社 カラー撮像素子および撮像装置
WO2020066738A1 (ja) 2018-09-26 2020-04-02 日本電信電話株式会社 偏光イメージング撮像システム
JP2020123964A (ja) 2018-04-17 2020-08-13 日本電信電話株式会社 カラー撮像素子および撮像装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101067A1 (ja) * 2004-04-13 2005-10-27 Matsushita Electric Industrial Co., Ltd. 集光素子および固体撮像装置
KR100998098B1 (ko) * 2004-06-22 2010-12-02 니폰덴신뎅와 가부시키가이샤 광학 재료, 광학 렌즈 및 프리즘
EP1785750A1 (en) * 2004-09-01 2007-05-16 Matsushita Electric Industrial Co., Ltd. Condensing element, solid-state imaging device and method for fabricating the same
US8384818B2 (en) 2008-06-18 2013-02-26 Panasonic Corporation Solid-state imaging device including arrays of optical elements and photosensitive cells
CN102160180A (zh) * 2009-07-24 2011-08-17 松下电器产业株式会社 摄像装置以及固体摄像元件
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US10790325B2 (en) * 2015-07-29 2020-09-29 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
JP2018207035A (ja) * 2017-06-08 2018-12-27 凸版印刷株式会社 固体撮像素子
US20200301053A1 (en) * 2019-03-20 2020-09-24 Coherent AI LLC Optical sensing device employing light intensity detectors integrated with nanostructures
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor
US11640645B2 (en) * 2019-10-25 2023-05-02 Samsung Electronics Co., Ltd. Apparatus and method of acquiring image by employing color separation lens array
CN114447007A (zh) 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括该图像传感器的电子设备
WO2022113363A1 (ja) * 2020-11-30 2022-06-02 日本電信電話株式会社 光学素子、撮像素子及び撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010156942A (ja) 2008-12-31 2010-07-15 Ind Technol Res Inst 色分離光学装置およびそれを応用した画像装置
JP2018146750A (ja) 2017-03-03 2018-09-20 株式会社ジャパンディスプレイ 表示装置、表示方法及び色分離素子
JP2019184986A (ja) 2018-04-17 2019-10-24 日本電信電話株式会社 カラー撮像素子および撮像装置
JP2020123964A (ja) 2018-04-17 2020-08-13 日本電信電話株式会社 カラー撮像素子および撮像装置
WO2020066738A1 (ja) 2018-09-26 2020-04-02 日本電信電話株式会社 偏光イメージング撮像システム

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Publication number Publication date
JPWO2022113362A1 (https=) 2022-06-02
WO2022113362A1 (ja) 2022-06-02
EP4242702B1 (en) 2026-04-15
KR102801187B1 (ko) 2025-04-29
CN116529637A (zh) 2023-08-01
EP4242702A4 (en) 2024-07-17
EP4242702A1 (en) 2023-09-13
JP2024180638A (ja) 2024-12-26
US20240006440A1 (en) 2024-01-04
JP7852689B2 (ja) 2026-04-28
KR20230093325A (ko) 2023-06-27
CN116529637B (zh) 2025-05-13

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