CN116529637B - 光学元件、摄像元件以及摄像装置 - Google Patents

光学元件、摄像元件以及摄像装置 Download PDF

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Publication number
CN116529637B
CN116529637B CN202080107529.7A CN202080107529A CN116529637B CN 116529637 B CN116529637 B CN 116529637B CN 202080107529 A CN202080107529 A CN 202080107529A CN 116529637 B CN116529637 B CN 116529637B
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China
Prior art keywords
pixel
light
structures
pixels
transparent layer
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Chinese (zh)
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CN116529637A (zh
Inventor
宫田将司
根本成
小林史英
桥本俊和
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Entiti Corp
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Nippon Telegraph and Telephone Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Color Television Image Signal Generators (AREA)
CN202080107529.7A 2020-11-30 2020-11-30 光学元件、摄像元件以及摄像装置 Active CN116529637B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/044560 WO2022113362A1 (ja) 2020-11-30 2020-11-30 光学素子、撮像素子及び撮像装置

Publications (2)

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CN116529637A CN116529637A (zh) 2023-08-01
CN116529637B true CN116529637B (zh) 2025-05-13

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Country Status (6)

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US (1) US20240006440A1 (https=)
EP (1) EP4242702B1 (https=)
JP (2) JP7574859B2 (https=)
KR (1) KR102801187B1 (https=)
CN (1) CN116529637B (https=)
WO (1) WO2022113362A1 (https=)

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WO2022113363A1 (ja) * 2020-11-30 2022-06-02 日本電信電話株式会社 光学素子、撮像素子及び撮像装置
WO2025070228A1 (ja) * 2023-09-27 2025-04-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250151435A1 (en) * 2023-11-03 2025-05-08 Visera Technologies Company Limited Solid-state image sensor
US20250297855A1 (en) * 2024-03-21 2025-09-25 Kla Corporation System and method for device-like overlay targets measurement
WO2025258002A1 (ja) * 2024-06-12 2025-12-18 Ｎｔｔ株式会社 撮像素子および撮像装置
WO2026028602A1 (ja) * 2024-07-30 2026-02-05 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (2)

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CN111095561A (zh) * 2018-04-17 2020-05-01 日本电信电话株式会社 彩色摄像元件以及摄像装置
CN116547565A (zh) * 2020-11-30 2023-08-04 日本电信电话株式会社 光学元件、摄像元件以及摄像装置

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WO2005101067A1 (ja) * 2004-04-13 2005-10-27 Matsushita Electric Industrial Co., Ltd. 集光素子および固体撮像装置
KR100998098B1 (ko) * 2004-06-22 2010-12-02 니폰덴신뎅와 가부시키가이샤 광학 재료, 광학 렌즈 및 프리즘
EP1785750A1 (en) * 2004-09-01 2007-05-16 Matsushita Electric Industrial Co., Ltd. Condensing element, solid-state imaging device and method for fabricating the same
US8384818B2 (en) 2008-06-18 2013-02-26 Panasonic Corporation Solid-state imaging device including arrays of optical elements and photosensitive cells
TWI424200B (zh) * 2008-12-31 2014-01-21 Ind Tech Res Inst 色彩分離光學元件以及所應用的影像裝置
CN102160180A (zh) * 2009-07-24 2011-08-17 松下电器产业株式会社 摄像装置以及固体摄像元件
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US10790325B2 (en) * 2015-07-29 2020-09-29 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
JP7062366B2 (ja) * 2017-03-03 2022-05-06 株式会社ジャパンディスプレイ 表示装置、表示方法及び色分離素子
JP2018207035A (ja) * 2017-06-08 2018-12-27 凸版印刷株式会社 固体撮像素子
JP6981496B2 (ja) 2018-04-17 2021-12-15 日本電信電話株式会社 カラー撮像素子および撮像装置
JP6857163B2 (ja) 2018-09-26 2021-04-14 日本電信電話株式会社 偏光イメージング撮像システム
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CN114447007A (zh) 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括该图像传感器的电子设备

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CN116547565A (zh) * 2020-11-30 2023-08-04 日本电信电话株式会社 光学元件、摄像元件以及摄像装置

Also Published As

Publication number Publication date
JPWO2022113362A1 (https=) 2022-06-02
WO2022113362A1 (ja) 2022-06-02
JP7574859B2 (ja) 2024-10-29
EP4242702B1 (en) 2026-04-15
KR102801187B1 (ko) 2025-04-29
CN116529637A (zh) 2023-08-01
EP4242702A4 (en) 2024-07-17
EP4242702A1 (en) 2023-09-13
JP2024180638A (ja) 2024-12-26
US20240006440A1 (en) 2024-01-04
JP7852689B2 (ja) 2026-04-28
KR20230093325A (ko) 2023-06-27

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