KR102799979B1 - 레이저 어닐 장치 및 레이저 어닐 방법 - Google Patents

레이저 어닐 장치 및 레이저 어닐 방법 Download PDF

Info

Publication number
KR102799979B1
KR102799979B1 KR1020227001283A KR20227001283A KR102799979B1 KR 102799979 B1 KR102799979 B1 KR 102799979B1 KR 1020227001283 A KR1020227001283 A KR 1020227001283A KR 20227001283 A KR20227001283 A KR 20227001283A KR 102799979 B1 KR102799979 B1 KR 102799979B1
Authority
KR
South Korea
Prior art keywords
laser
amorphous silicon
silicon film
modified
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227001283A
Other languages
English (en)
Korean (ko)
Other versions
KR20220052901A (ko
Inventor
준이치 코스기
잉바오 양
Original Assignee
브이 테크놀로지 씨오. 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 브이 테크놀로지 씨오. 엘티디 filed Critical 브이 테크놀로지 씨오. 엘티디
Publication of KR20220052901A publication Critical patent/KR20220052901A/ko
Application granted granted Critical
Publication of KR102799979B1 publication Critical patent/KR102799979B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L21/268—
    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electromagnetism (AREA)
KR1020227001283A 2019-08-29 2020-08-27 레이저 어닐 장치 및 레이저 어닐 방법 Active KR102799979B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019157087 2019-08-29
JPJP-P-2019-157087 2019-08-29
JPJP-P-2020-010744 2020-01-27
JP2020010744 2020-01-27
PCT/JP2020/032422 WO2021039920A1 (ja) 2019-08-29 2020-08-27 レーザアニール装置およびレーザアニール方法

Publications (2)

Publication Number Publication Date
KR20220052901A KR20220052901A (ko) 2022-04-28
KR102799979B1 true KR102799979B1 (ko) 2025-04-25

Family

ID=74683998

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227001283A Active KR102799979B1 (ko) 2019-08-29 2020-08-27 레이저 어닐 장치 및 레이저 어닐 방법

Country Status (5)

Country Link
JP (1) JP7575788B2 (https=)
KR (1) KR102799979B1 (https=)
CN (2) CN213366530U (https=)
TW (1) TWI869437B (https=)
WO (2) WO2021039310A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021039310A1 (ja) * 2019-08-29 2021-03-04 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法
JP7820804B2 (ja) 2022-03-09 2026-02-26 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法
EP4638050A1 (en) * 2023-01-27 2025-10-29 IPG Photonics Corporation High-power laser system for forming laser irradiation zone with specified dimensions and power density distribution for thermal surface treatment applications

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041092A (ja) * 2004-07-26 2006-02-09 Nikon Corp 熱処理方法及び熱処理装置、並びにマスク
JP2006100427A (ja) * 2004-09-28 2006-04-13 Advanced Lcd Technologies Development Center Co Ltd 位相シフタの製造方法およびレーザアニール装置
JP2010500759A (ja) * 2006-08-07 2010-01-07 ティーシーズィー ピーティーイー リミテッド アモルファスシリコンの結晶化を最適化するシステム及び方法
JP2010118409A (ja) * 2008-11-11 2010-05-27 Ulvac Japan Ltd レーザアニール装置及びレーザアニール方法
JP2011165717A (ja) * 2010-02-04 2011-08-25 Hitachi Displays Ltd 表示装置及び表示装置の製造方法
JP2012044046A (ja) * 2010-08-20 2012-03-01 Sumitomo Heavy Ind Ltd レーザアニール装置及びレーザアニール方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288520A (ja) * 1995-04-20 1996-11-01 A G Technol Kk アクティブマトリックス基板の製造方法
TW535194B (en) 2000-08-25 2003-06-01 Fujitsu Ltd Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
JP4438300B2 (ja) * 2003-03-19 2010-03-24 株式会社リコー 光走査装置、画像形成装置、および画像形成システム
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
US10051249B2 (en) * 2015-01-30 2018-08-14 Hitachi-Lg Data Storage, Inc. Laser projection display device, and method for controlling laser lightsource driving unit used for same
JP6754557B2 (ja) * 2015-09-11 2020-09-16 パナソニック株式会社 表示装置とその輝度欠陥修正方法
DE102018102376A1 (de) * 2018-02-02 2019-08-08 Scanlab Gmbh Vorrichtung zur Lasermaterialbearbeitung mit einer eine Relayoptik aufweisenden Sensoreinheit
WO2021039310A1 (ja) * 2019-08-29 2021-03-04 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041092A (ja) * 2004-07-26 2006-02-09 Nikon Corp 熱処理方法及び熱処理装置、並びにマスク
JP2006100427A (ja) * 2004-09-28 2006-04-13 Advanced Lcd Technologies Development Center Co Ltd 位相シフタの製造方法およびレーザアニール装置
JP2010500759A (ja) * 2006-08-07 2010-01-07 ティーシーズィー ピーティーイー リミテッド アモルファスシリコンの結晶化を最適化するシステム及び方法
JP2010118409A (ja) * 2008-11-11 2010-05-27 Ulvac Japan Ltd レーザアニール装置及びレーザアニール方法
JP2011165717A (ja) * 2010-02-04 2011-08-25 Hitachi Displays Ltd 表示装置及び表示装置の製造方法
JP2012044046A (ja) * 2010-08-20 2012-03-01 Sumitomo Heavy Ind Ltd レーザアニール装置及びレーザアニール方法

Also Published As

Publication number Publication date
CN213366530U (zh) 2021-06-04
KR20220052901A (ko) 2022-04-28
TW202122195A (zh) 2021-06-16
CN112447506B (zh) 2025-08-15
WO2021039310A1 (ja) 2021-03-04
CN112447506A (zh) 2021-03-05
WO2021039920A1 (ja) 2021-03-04
JP7575788B2 (ja) 2024-10-30
TWI869437B (zh) 2025-01-11
JPWO2021039920A1 (https=) 2021-03-04

Similar Documents

Publication Publication Date Title
KR102799979B1 (ko) 레이저 어닐 장치 및 레이저 어닐 방법
KR100894925B1 (ko) 레이저 어닐 장치 및 박막 트랜지스터의 제조 방법
JPWO2007114031A1 (ja) レーザ照射装置及びレーザ照射方法及び改質された被対象物の製造方法
CN1601579A (zh) 显示屏的制造方法及显示屏
CN108713244A (zh) 薄膜晶体管的制造方法及用于该制造方法的掩模
JP2010118409A (ja) レーザアニール装置及びレーザアニール方法
WO2012157410A1 (ja) レーザ処理装置
KR102923167B1 (ko) 레이저 어닐 장치 및 레이저 어닐 방법
JP2007165624A (ja) 照射装置
KR101810062B1 (ko) 레이저 결정화 장치 및 레이저 결정화 방법
KR20210119962A (ko) 레이저 어닐 방법 및 레이저 어닐 장치
JP2020145363A (ja) レーザアニール装置
JP7820804B2 (ja) レーザアニール装置およびレーザアニール方法
KR100667899B1 (ko) 저온 다결정 폴리 실리콘 박막트랜지스터 액정표시장치의레이저 어닐링 장치 및 방법
WO2025013431A1 (ja) レーザアニール装置およびレーザアニール方法
KR101189647B1 (ko) 결정질막의 제조 방법 및 제조 장치
TW202115812A (zh) 雷射退火裝置及結晶化膜的形成方法
KR20210071960A (ko) 레이저 어닐 장치 및 레이저 어닐 방법
JP2007287866A (ja) 半導体結晶薄膜の製造方法およびそれに用いられる製造装置、フォトマスク、ならびに半導体素子
WO2021181700A1 (ja) レーザアニール装置およびレーザアニール方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000