KR102797835B1 - 반도체 장치 및 반도체 장치의 동작 방법 - Google Patents

반도체 장치 및 반도체 장치의 동작 방법 Download PDF

Info

Publication number
KR102797835B1
KR102797835B1 KR1020217026568A KR20217026568A KR102797835B1 KR 102797835 B1 KR102797835 B1 KR 102797835B1 KR 1020217026568 A KR1020217026568 A KR 1020217026568A KR 20217026568 A KR20217026568 A KR 20217026568A KR 102797835 B1 KR102797835 B1 KR 102797835B1
Authority
KR
South Korea
Prior art keywords
transistor
circuit
addition
oxide
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217026568A
Other languages
English (en)
Korean (ko)
Other versions
KR20210119462A (ko
Inventor
유키 오카모토
다카히코 이시즈
게이 다카하시
다카유키 이케다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20210119462A publication Critical patent/KR20210119462A/ko
Application granted granted Critical
Publication of KR102797835B1 publication Critical patent/KR102797835B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/02—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries for charging batteries from AC mains by converters
    • H02J7/04—Regulation of charging current or voltage
    • H02J7/06—Regulation of charging current or voltage using discharge tubes or semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/56—Active balancing, e.g. using capacitor-based, inductor-based or DC-DC converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H02J7/0014—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/54—Passive balancing, e.g. using resistors or parallel MOSFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/70—Energy storage systems for electromobility, e.g. batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
KR1020217026568A 2019-01-24 2020-01-14 반도체 장치 및 반도체 장치의 동작 방법 Active KR102797835B1 (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JPJP-P-2019-010581 2019-01-24
JP2019010581 2019-01-24
JP2019012339 2019-01-28
JPJP-P-2019-012339 2019-01-28
JP2019019478 2019-02-06
JPJP-P-2019-019478 2019-02-06
JP2019219308 2019-12-04
JPJP-P-2019-219308 2019-12-04
JP2019221555 2019-12-06
JPJP-P-2019-221555 2019-12-06
PCT/IB2020/050244 WO2020152541A1 (ja) 2019-01-24 2020-01-14 半導体装置及び半導体装置の動作方法

Publications (2)

Publication Number Publication Date
KR20210119462A KR20210119462A (ko) 2021-10-05
KR102797835B1 true KR102797835B1 (ko) 2025-04-18

Family

ID=71736255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217026568A Active KR102797835B1 (ko) 2019-01-24 2020-01-14 반도체 장치 및 반도체 장치의 동작 방법

Country Status (6)

Country Link
US (1) US12034322B2 (https=)
JP (1) JP7463298B2 (https=)
KR (1) KR102797835B1 (https=)
CN (1) CN113302778A (https=)
TW (1) TWI812830B (https=)
WO (1) WO2020152541A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12431719B2 (en) * 2018-08-31 2025-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method of semiconductor device
WO2020174299A1 (ja) 2019-02-25 2020-09-03 株式会社半導体エネルギー研究所 二次電池の保護回路及び二次電池の異常検知システム
TWI844493B (zh) * 2021-03-29 2024-06-01 日商新唐科技日本股份有限公司 半導體裝置
WO2023025506A1 (en) * 2021-08-26 2023-03-02 Asml Netherlands B.V. Method for determing a measurement recipe and associated apparatuses
KR20230039565A (ko) * 2021-09-14 2023-03-21 에이블릭 가부시키가이샤 셀 밸런스 회로, 셀 밸런스 장치, 충방전 제어 회로, 충방전 제어 장치 및 배터리 장치
CN114737199B (zh) * 2022-03-28 2023-06-27 成都泰美克晶体技术有限公司 一种sc圆片腐蚀清洗系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010623A (ja) 2007-06-27 2009-01-15 Rohm Co Ltd 発振回路およびパルス信号の生成方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206238A (en) * 1981-06-10 1982-12-17 Nihon Rika Kogyo Kk Electric amount meter with charge control
JP2005235315A (ja) 2004-02-19 2005-09-02 Elpida Memory Inc 昇圧回路
JP4400536B2 (ja) 2004-12-27 2010-01-20 日産自動車株式会社 組電池の容量調整装置および容量調整方法
US20070298753A1 (en) * 2006-06-22 2007-12-27 Tom Tary Rechargeable cellular telephone
TWI831616B (zh) 2006-09-29 2024-02-01 日商半導體能源研究所股份有限公司 半導體裝置
JP5815195B2 (ja) 2008-09-11 2015-11-17 ミツミ電機株式会社 電池状態検知装置及びそれを内蔵する電池パック
CN102282739B (zh) 2009-01-14 2014-05-07 三美电机株式会社 保护监视电路、电池组、二次电池监视电路以及保护电路
JP5434168B2 (ja) 2009-03-17 2014-03-05 株式会社リコー 二次電池の保護用半導体装置およびそれを用いたバッテリパックならびに電子機器
JP2010246225A (ja) 2009-04-03 2010-10-28 Sony Corp 電池パックおよび充電方法
JP5724227B2 (ja) 2010-06-30 2015-05-27 日立工機株式会社 電池パック及びそれを用いた電動工具
JP2012090474A (ja) 2010-10-21 2012-05-10 Hitachi Vehicle Energy Ltd 電池システム
JP2012208120A (ja) * 2011-03-17 2012-10-25 Ricoh Co Ltd 二次電池の保護用半導体装置
US9105351B2 (en) 2011-11-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including amplifier circuit
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9083327B2 (en) * 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6608638B2 (ja) 2015-07-14 2019-11-20 株式会社半導体エネルギー研究所 蓄電装置及び電子機器
US20170063112A1 (en) 2015-08-31 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Power storage device with monitoring ic
JP7309717B2 (ja) 2018-08-03 2023-07-18 株式会社半導体エネルギー研究所 二次電池の異常検知システム
US11531362B2 (en) 2018-08-10 2022-12-20 Semiconductor Energy Laboratory Co., Ltd. Amplifier circuit, latch circuit, and sensing device
US12431719B2 (en) 2018-08-31 2025-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010623A (ja) 2007-06-27 2009-01-15 Rohm Co Ltd 発振回路およびパルス信号の生成方法

Also Published As

Publication number Publication date
US12034322B2 (en) 2024-07-09
JPWO2020152541A1 (https=) 2020-07-30
US20220094177A1 (en) 2022-03-24
WO2020152541A1 (ja) 2020-07-30
JP7463298B2 (ja) 2024-04-08
CN113302778A (zh) 2021-08-24
KR20210119462A (ko) 2021-10-05
TWI812830B (zh) 2023-08-21
TW202105822A (zh) 2021-02-01

Similar Documents

Publication Publication Date Title
KR102797835B1 (ko) 반도체 장치 및 반도체 장치의 동작 방법
CN112930636B (zh) 蓄电装置及蓄电装置的工作方法
JP7653968B2 (ja) 半導体装置、蓄電装置、電池制御回路、電子部品、車両、および電子機器
US20250260240A1 (en) Semiconductor device and operating method of semiconductor device
JP7621953B2 (ja) 半導体装置の動作方法
KR102903741B1 (ko) 전지 보호 회로, 축전 장치, 및 전기 기기
US20240396105A1 (en) Semiconductor device
US11988720B2 (en) Semiconductor device and battery pack
JP2025169392A (ja) 蓄電装置
JP7726896B2 (ja) 二次電池の制御回路および電子機器

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D18-X000 Deferred examination requested

St.27 status event code: A-1-2-D10-D18-exm-X000

D19-X000 Deferred examination accepted

St.27 status event code: A-1-2-D10-D19-exm-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D20-X000 Deferred examination resumed

St.27 status event code: A-1-2-D10-D20-exm-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000