CN113302778A - 半导体装置及半导体装置的工作方法 - Google Patents

半导体装置及半导体装置的工作方法 Download PDF

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Publication number
CN113302778A
CN113302778A CN202080009103.8A CN202080009103A CN113302778A CN 113302778 A CN113302778 A CN 113302778A CN 202080009103 A CN202080009103 A CN 202080009103A CN 113302778 A CN113302778 A CN 113302778A
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CN
China
Prior art keywords
transistor
circuit
electrode
capacitor
secondary battery
Prior art date
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Pending
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CN202080009103.8A
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English (en)
Chinese (zh)
Inventor
冈本佑树
石津贵彦
高桥圭
池田隆之
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN113302778A publication Critical patent/CN113302778A/zh
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/02—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries for charging batteries from AC mains by converters
    • H02J7/04—Regulation of charging current or voltage
    • H02J7/06—Regulation of charging current or voltage using discharge tubes or semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/56—Active balancing, e.g. using capacitor-based, inductor-based or DC-DC converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/54—Passive balancing, e.g. using resistors or parallel MOSFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/70—Energy storage systems for electromobility, e.g. batteries

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN202080009103.8A 2019-01-24 2020-01-14 半导体装置及半导体装置的工作方法 Pending CN113302778A (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2019-010581 2019-01-24
JP2019010581 2019-01-24
JP2019012339 2019-01-28
JP2019-012339 2019-01-28
JP2019019478 2019-02-06
JP2019-019478 2019-02-06
JP2019219308 2019-12-04
JP2019-219308 2019-12-04
JP2019-221555 2019-12-06
JP2019221555 2019-12-06
PCT/IB2020/050244 WO2020152541A1 (ja) 2019-01-24 2020-01-14 半導体装置及び半導体装置の動作方法

Publications (1)

Publication Number Publication Date
CN113302778A true CN113302778A (zh) 2021-08-24

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CN202080009103.8A Pending CN113302778A (zh) 2019-01-24 2020-01-14 半导体装置及半导体装置的工作方法

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US (1) US12034322B2 (https=)
JP (1) JP7463298B2 (https=)
KR (1) KR102797835B1 (https=)
CN (1) CN113302778A (https=)
TW (1) TWI812830B (https=)
WO (1) WO2020152541A1 (https=)

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US12431719B2 (en) * 2018-08-31 2025-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method of semiconductor device
WO2020174299A1 (ja) 2019-02-25 2020-09-03 株式会社半導体エネルギー研究所 二次電池の保護回路及び二次電池の異常検知システム
TWI844493B (zh) * 2021-03-29 2024-06-01 日商新唐科技日本股份有限公司 半導體裝置
WO2023025506A1 (en) * 2021-08-26 2023-03-02 Asml Netherlands B.V. Method for determing a measurement recipe and associated apparatuses
KR20230039565A (ko) * 2021-09-14 2023-03-21 에이블릭 가부시키가이샤 셀 밸런스 회로, 셀 밸런스 장치, 충방전 제어 회로, 충방전 제어 장치 및 배터리 장치
CN114737199B (zh) * 2022-03-28 2023-06-27 成都泰美克晶体技术有限公司 一种sc圆片腐蚀清洗系统

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Publication number Publication date
US12034322B2 (en) 2024-07-09
JPWO2020152541A1 (https=) 2020-07-30
US20220094177A1 (en) 2022-03-24
WO2020152541A1 (ja) 2020-07-30
JP7463298B2 (ja) 2024-04-08
KR102797835B1 (ko) 2025-04-18
KR20210119462A (ko) 2021-10-05
TWI812830B (zh) 2023-08-21
TW202105822A (zh) 2021-02-01

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