KR102729403B1 - 기판 지지기, 플라즈마 처리 장치, 및 포커스 링 - Google Patents

기판 지지기, 플라즈마 처리 장치, 및 포커스 링 Download PDF

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Publication number
KR102729403B1
KR102729403B1 KR1020190140989A KR20190140989A KR102729403B1 KR 102729403 B1 KR102729403 B1 KR 102729403B1 KR 1020190140989 A KR1020190140989 A KR 1020190140989A KR 20190140989 A KR20190140989 A KR 20190140989A KR 102729403 B1 KR102729403 B1 KR 102729403B1
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KR
South Korea
Prior art keywords
focus ring
connecting member
region
substrate
chuck
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KR1020190140989A
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English (en)
Korean (ko)
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KR20200053425A (ko
Inventor
야스하루 사사키
요헤이 우치다
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도쿄엘렉트론가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/6833—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/67017—
    • H01L21/67098—
    • H01L21/68721—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020190140989A 2018-11-08 2019-11-06 기판 지지기, 플라즈마 처리 장치, 및 포커스 링 Active KR102729403B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-210733 2018-11-08
JP2018210733A JP7145041B2 (ja) 2018-11-08 2018-11-08 基板支持器、プラズマ処理装置、及びフォーカスリング

Publications (2)

Publication Number Publication Date
KR20200053425A KR20200053425A (ko) 2020-05-18
KR102729403B1 true KR102729403B1 (ko) 2024-11-12

Family

ID=70549953

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190140989A Active KR102729403B1 (ko) 2018-11-08 2019-11-06 기판 지지기, 플라즈마 처리 장치, 및 포커스 링

Country Status (4)

Country Link
US (1) US11600471B2 (https=)
JP (1) JP7145041B2 (https=)
KR (1) KR102729403B1 (https=)
CN (1) CN111161991B (https=)

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* Cited by examiner, † Cited by third party
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JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
JP7394601B2 (ja) * 2019-11-28 2023-12-08 東京エレクトロン株式会社 プラズマ処理装置及び測定方法
CN112435913B (zh) * 2020-11-23 2024-04-12 北京北方华创微电子装备有限公司 半导体设备及其下电极
CN115249606B (zh) * 2021-04-28 2025-02-14 中微半导体设备(上海)股份有限公司 等离子体处理装置、下电极组件及其形成方法
JP7579752B2 (ja) * 2021-05-27 2024-11-08 東京エレクトロン株式会社 クリーニングを制御する方法及びプラズマ処理装置
US20250079132A1 (en) * 2022-01-11 2025-03-06 Lam Research Corporation Plasma radical edge ring barrier seal
CN118824826B (zh) * 2023-04-19 2025-09-16 上海芯之翼半导体材料有限公司 一种提升干法刻蚀均匀度的装置及方法
WO2024249035A1 (en) * 2023-05-30 2024-12-05 Beijing E-town Semiconductor Technology Co., Ltd. Workpiece processing apparatus and methods for the treatment of workpieces

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20100000970A1 (en) 2008-07-07 2010-01-07 Tokyo Electron Limited In-chamber member temperature control method, in-chamber member, substrate mounting table and plasma processing apparatus including same
JP2011009351A (ja) 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2011210958A (ja) 2010-03-30 2011-10-20 Tokyo Electron Ltd プラズマ処理装置及び半導体装置の製造方法
JP2017055100A (ja) * 2015-07-13 2017-03-16 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ エッジに限局されたイオン軌道制御及びプラズマ動作を通じた、最端エッジにおけるシース及びウエハのプロフィール調整

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JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US7331876B2 (en) 2002-02-28 2008-02-19 Lon Klein Integrated putter system
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
KR101247857B1 (ko) * 2004-06-21 2013-03-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP4884047B2 (ja) 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP2010034416A (ja) * 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
US9299539B2 (en) * 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP5313375B2 (ja) * 2012-02-20 2013-10-09 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP5893516B2 (ja) * 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
JP5981358B2 (ja) * 2013-01-23 2016-08-31 東京エレクトロン株式会社 伝熱シート貼付方法
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
CN106548917B (zh) * 2015-09-21 2018-07-27 中微半导体设备(上海)有限公司 调节等离子体刻蚀腔内器件温度的装置及其温度调节方法
JP7149068B2 (ja) * 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

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Publication number Priority date Publication date Assignee Title
US20100000970A1 (en) 2008-07-07 2010-01-07 Tokyo Electron Limited In-chamber member temperature control method, in-chamber member, substrate mounting table and plasma processing apparatus including same
JP2011009351A (ja) 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2011210958A (ja) 2010-03-30 2011-10-20 Tokyo Electron Ltd プラズマ処理装置及び半導体装置の製造方法
JP2017055100A (ja) * 2015-07-13 2017-03-16 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ エッジに限局されたイオン軌道制御及びプラズマ動作を通じた、最端エッジにおけるシース及びウエハのプロフィール調整

Also Published As

Publication number Publication date
JP7145041B2 (ja) 2022-09-30
JP2020077785A (ja) 2020-05-21
US11600471B2 (en) 2023-03-07
CN111161991B (zh) 2024-07-12
CN111161991A (zh) 2020-05-15
US20200152428A1 (en) 2020-05-14
KR20200053425A (ko) 2020-05-18

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