KR102723916B1 - 에칭 방법 - Google Patents

에칭 방법 Download PDF

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Publication number
KR102723916B1
KR102723916B1 KR1020227016762A KR20227016762A KR102723916B1 KR 102723916 B1 KR102723916 B1 KR 102723916B1 KR 1020227016762 A KR1020227016762 A KR 1020227016762A KR 20227016762 A KR20227016762 A KR 20227016762A KR 102723916 B1 KR102723916 B1 KR 102723916B1
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South Korea
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gas
plasma
silicon
etching
phosphorus
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KR1020227016762A
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Korean (ko)
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KR20220082068A (ko
KR102723916B9 (ko
Inventor
다카히로 요코야마
마주 도무라
요시히데 기하라
류타로 스다
다카토시 오루이
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도쿄엘렉트론가부시키가이샤
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Priority claimed from PCT/JP2020/005847 external-priority patent/WO2021090516A1/ja
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Priority to KR1020247035736A priority Critical patent/KR20240157785A/ko
Publication of KR20220082068A publication Critical patent/KR20220082068A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/31116—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01L21/02164—
    • H01L21/0217—
    • H01L21/31144—
    • H01L21/32055—
    • H01L21/32136—
    • H01L21/32139—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020227016762A 2019-11-08 2020-11-02 에칭 방법 Active KR102723916B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247035736A KR20240157785A (ko) 2019-11-08 2020-11-02 에칭 방법

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2019203326 2019-11-08
JPJP-P-2019-203326 2019-11-08
PCT/JP2020/005847 WO2021090516A1 (ja) 2019-11-08 2020-02-14 エッチング方法
JPPCT/JP2020/005847 2020-02-14
JP2020152786 2020-09-11
JPJP-P-2020-152786 2020-09-11
KR1020217009334A KR102401025B1 (ko) 2019-11-08 2020-11-02 에칭 방법
PCT/JP2020/041026 WO2021090798A1 (ja) 2019-11-08 2020-11-02 エッチング方法

Related Parent Applications (1)

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KR1020217009334A Division KR102401025B1 (ko) 2019-11-08 2020-11-02 에칭 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020247035736A Division KR20240157785A (ko) 2019-11-08 2020-11-02 에칭 방법

Publications (3)

Publication Number Publication Date
KR20220082068A KR20220082068A (ko) 2022-06-16
KR102723916B1 true KR102723916B1 (ko) 2024-10-31
KR102723916B9 KR102723916B9 (ko) 2025-06-10

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KR1020217009334A Active KR102401025B1 (ko) 2019-11-08 2020-11-02 에칭 방법
KR1020247035736A Pending KR20240157785A (ko) 2019-11-08 2020-11-02 에칭 방법

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KR1020247035736A Pending KR20240157785A (ko) 2019-11-08 2020-11-02 에칭 방법

Country Status (7)

Country Link
US (4) US11551937B2 (enExample)
EP (1) EP4050641A4 (enExample)
JP (4) JP6990799B2 (enExample)
KR (3) KR102723916B1 (enExample)
CN (2) CN114175214B (enExample)
TW (1) TW202536963A (enExample)
WO (1) WO2021090798A1 (enExample)

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KR20230165190A (ko) 2021-04-08 2023-12-05 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 시스템
WO2022230118A1 (ja) * 2021-04-28 2022-11-03 東京エレクトロン株式会社 エッチング方法
JP7767024B2 (ja) * 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7434669B2 (ja) * 2021-06-21 2024-02-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7675044B2 (ja) 2022-03-24 2025-05-12 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
WO2023189292A1 (ja) * 2022-03-31 2023-10-05 東京エレクトロン株式会社 プラズマ処理装置
JP7712242B2 (ja) 2022-04-01 2025-07-23 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2023171269A (ja) * 2022-05-19 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
KR20250056935A (ko) * 2022-08-26 2025-04-28 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
JP7536941B2 (ja) * 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TW202431406A (zh) * 2022-09-22 2024-08-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102733623B1 (ko) * 2022-11-11 2024-11-25 세메스 주식회사 기판 처리 장치의 챔버 내부 표면의 보호막 형성 방법
KR20250116060A (ko) * 2022-12-01 2025-07-31 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
WO2024204321A1 (ja) * 2023-03-28 2024-10-03 東京エレクトロン株式会社 エッチング装置及びエッチング方法
WO2025089102A1 (ja) * 2023-10-24 2025-05-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2025150427A1 (ja) * 2024-01-09 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
US20250279283A1 (en) * 2024-03-01 2025-09-04 Applied Materials, Inc. Selective etching of alternating layers of silicon oxide and silicon nitride for high aspect ratio contacts
US20260052921A1 (en) * 2024-08-13 2026-02-19 Applied Materials, Inc. Deep trench isolation etching
TWI912123B (zh) * 2025-01-23 2026-01-11 埃爾思科技股份有限公司 具有單一光學裝置之離子顯微鏡及聚焦離子束系統
JP7751768B1 (ja) * 2025-03-21 2025-10-08 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

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US20220157610A1 (en) 2022-05-19
KR20220082068A (ko) 2022-06-16
JP2022020007A (ja) 2022-01-27
US11551937B2 (en) 2023-01-10
JP2026012478A (ja) 2026-01-23
KR20240157785A (ko) 2024-11-01
JP6990799B2 (ja) 2022-02-03
CN114175214A (zh) 2022-03-11
CN116169018B (zh) 2026-04-17
JP7525464B2 (ja) 2024-07-30
WO2021090798A1 (ja) 2021-05-14
EP4050641A4 (en) 2023-12-13
US12142484B2 (en) 2024-11-12
KR102723916B9 (ko) 2025-06-10
US11615964B2 (en) 2023-03-28
CN116169018A (zh) 2023-05-26
CN114175214B (zh) 2023-01-31
JP2024133307A (ja) 2024-10-01
TW202536963A (zh) 2025-09-16
US20220199412A1 (en) 2022-06-23
US20230197458A1 (en) 2023-06-22
JPWO2021090798A1 (ja) 2021-11-25
JP7775384B2 (ja) 2025-11-25
KR20210057061A (ko) 2021-05-20
EP4050641A1 (en) 2022-08-31
KR102401025B1 (ko) 2022-05-24
US20250046615A1 (en) 2025-02-06

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