KR102701296B1 - 클리닝 방법 및 플라즈마 처리 장치 - Google Patents

클리닝 방법 및 플라즈마 처리 장치 Download PDF

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Publication number
KR102701296B1
KR102701296B1 KR1020190107161A KR20190107161A KR102701296B1 KR 102701296 B1 KR102701296 B1 KR 102701296B1 KR 1020190107161 A KR1020190107161 A KR 1020190107161A KR 20190107161 A KR20190107161 A KR 20190107161A KR 102701296 B1 KR102701296 B1 KR 102701296B1
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South Korea
Prior art keywords
chamber
central axis
plasma processing
processing device
electromagnet
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KR1020190107161A
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English (en)
Korean (ko)
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KR20200047308A (ko
Inventor
미츠히로 이와노
마사노리 호소야
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도쿄엘렉트론가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H01L21/02046—
    • H01L21/67028—
    • H01L21/67259—
    • H01L21/68721—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020190107161A 2018-10-25 2019-08-30 클리닝 방법 및 플라즈마 처리 장치 Active KR102701296B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-200988 2018-10-25
JP2018200988A JP7154105B2 (ja) 2018-10-25 2018-10-25 クリーニング方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20200047308A KR20200047308A (ko) 2020-05-07
KR102701296B1 true KR102701296B1 (ko) 2024-09-02

Family

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KR1020190107161A Active KR102701296B1 (ko) 2018-10-25 2019-08-30 클리닝 방법 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US10734205B2 (https=)
JP (1) JP7154105B2 (https=)
KR (1) KR102701296B1 (https=)
CN (2) CN111105973B (https=)
TW (1) TWI878241B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113426763A (zh) * 2021-06-15 2021-09-24 扬州国兴技术有限公司 一种用于清洗印制电路板钻针胶渣残屑装置及方法
CN113976546A (zh) * 2021-09-29 2022-01-28 深圳泰德半导体装备有限公司 等离子清洗方法及等离子清洗机
KR20240016800A (ko) 2022-07-29 2024-02-06 삼성전자주식회사 플라즈마 처리 장치
TW202520340A (zh) * 2023-07-11 2025-05-16 日商東京威力科創股份有限公司 電漿處理方法及電漿處理裝置
CN117219977B (zh) * 2023-11-09 2024-03-01 青岛天仁微纳科技有限责任公司 一种立式双面等离子清洗装置
TW202548842A (zh) * 2023-12-19 2025-12-16 日商東京威力科創股份有限公司 電漿處理裝置及清潔方法
CN120183990A (zh) * 2023-12-20 2025-06-20 北京北方华创微电子装备有限公司 一种上电极结构、半导体工艺腔室及半导体工艺设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251639A (ja) 2007-03-29 2008-10-16 Mitsubishi Materials Corp プラズマエッチング用フォーカスリングおよびシールドリング
JP2015170611A (ja) 2014-03-04 2015-09-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置

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US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US6806949B2 (en) * 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
KR20050079860A (ko) * 2004-02-07 2005-08-11 삼성전자주식회사 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
CN100407381C (zh) * 2005-02-01 2008-07-30 科发伦材料株式会社 硅构件及其制造方法
JP4646941B2 (ja) * 2007-03-30 2011-03-09 東京エレクトロン株式会社 基板処理装置及びその処理室内の状態安定化方法
JP4754609B2 (ja) * 2008-08-11 2011-08-24 東京エレクトロン株式会社 処理装置およびそのクリーニング方法
JP5595795B2 (ja) * 2009-06-12 2014-09-24 東京エレクトロン株式会社 プラズマ処理装置用の消耗部品の再利用方法
KR101598465B1 (ko) * 2014-09-30 2016-03-02 세메스 주식회사 기판 처리 장치 및 방법
JP2017045849A (ja) * 2015-08-26 2017-03-02 東京エレクトロン株式会社 シーズニング方法およびエッチング方法
KR20170118466A (ko) * 2016-04-15 2017-10-25 삼성전자주식회사 포커스 링 조립체 및 이를 이용한 기판 처리 방법
JP6827287B2 (ja) * 2016-09-28 2021-02-10 株式会社日立ハイテク プラズマ処理装置の運転方法
KR102013668B1 (ko) * 2017-08-07 2019-08-26 세메스 주식회사 기판 처리 장치 및 검사 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251639A (ja) 2007-03-29 2008-10-16 Mitsubishi Materials Corp プラズマエッチング用フォーカスリングおよびシールドリング
JP2015170611A (ja) 2014-03-04 2015-09-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置

Also Published As

Publication number Publication date
CN111105973B (zh) 2024-04-19
JP2020068325A (ja) 2020-04-30
CN111105973A (zh) 2020-05-05
TW202017434A (zh) 2020-05-01
TWI878241B (zh) 2025-04-01
CN118197895A (zh) 2024-06-14
US10734205B2 (en) 2020-08-04
JP7154105B2 (ja) 2022-10-17
US20200135436A1 (en) 2020-04-30
KR20200047308A (ko) 2020-05-07

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