KR102690419B1 - 유전체 기판을 가공하기 위한 방법 및 조성물 - Google Patents

유전체 기판을 가공하기 위한 방법 및 조성물 Download PDF

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KR102690419B1
KR102690419B1 KR1020187003882A KR20187003882A KR102690419B1 KR 102690419 B1 KR102690419 B1 KR 102690419B1 KR 1020187003882 A KR1020187003882 A KR 1020187003882A KR 20187003882 A KR20187003882 A KR 20187003882A KR 102690419 B1 KR102690419 B1 KR 102690419B1
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polishing
ceria
particles
ppm
polishing composition
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Korean (ko)
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KR20180021387A (ko
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비에트 램
지 쿠이
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씨엠씨 머티리얼즈 엘엘씨
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020187003882A 2015-07-13 2016-07-12 유전체 기판을 가공하기 위한 방법 및 조성물 Active KR102690419B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562191824P 2015-07-13 2015-07-13
US62/191,824 2015-07-13
PCT/US2016/041887 WO2017011451A1 (en) 2015-07-13 2016-07-12 Methods and compositions for processing dielectric substrate

Publications (2)

Publication Number Publication Date
KR20180021387A KR20180021387A (ko) 2018-03-02
KR102690419B1 true KR102690419B1 (ko) 2024-08-01

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KR1020187003882A Active KR102690419B1 (ko) 2015-07-13 2016-07-12 유전체 기판을 가공하기 위한 방법 및 조성물

Country Status (7)

Country Link
US (2) US10029345B2 (enExample)
EP (2) EP3323142B1 (enExample)
JP (1) JP6879995B2 (enExample)
KR (1) KR102690419B1 (enExample)
CN (1) CN107851568B (enExample)
TW (1) TWI626280B (enExample)
WO (1) WO2017011451A1 (enExample)

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KR102670778B1 (ko) * 2015-09-03 2024-05-29 씨엠씨 머티리얼즈 엘엘씨 유전체 기판 처리를 위한 방법 및 조성물
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
TWI673357B (zh) * 2016-12-14 2019-10-01 美商卡博特微電子公司 自化學機械平坦化基板移除殘留物之組合物及方法
JP7132942B2 (ja) * 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
JP6985116B2 (ja) * 2017-11-17 2021-12-22 信越化学工業株式会社 合成石英ガラス基板用の研磨剤及び合成石英ガラス基板の研磨方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
KR102241941B1 (ko) * 2018-12-28 2021-04-20 주식회사 케이씨텍 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법
TWI826878B (zh) * 2020-12-21 2023-12-21 美商Ｃｍｃ材料有限責任公司 用於高拓樸選擇性的自停止性拋光組合物與方法
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
WO2025207608A1 (en) * 2024-03-25 2025-10-02 Entegris, Inc. Ceria and hydroxamic acid cmp composition

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US20040152309A1 (en) 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20100029181A1 (en) 2008-07-30 2010-02-04 Francesco De Rege Thesauro Methods and compositions for polishing silicon-containing substrates
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法
JP2015516476A (ja) * 2012-03-14 2015-06-11 キャボット マイクロエレクトロニクス コーポレイション 酸化物および窒化物に選択的な高除去速度および低欠陥のｃｍｐ組成物

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JP5965906B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法
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US20040152309A1 (en) 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2006520530A (ja) * 2003-02-03 2006-09-07 キャボット マイクロエレクトロニクス コーポレイション ケイ素含有誘電体の研磨方法
US20100029181A1 (en) 2008-07-30 2010-02-04 Francesco De Rege Thesauro Methods and compositions for polishing silicon-containing substrates
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法
JP2015516476A (ja) * 2012-03-14 2015-06-11 キャボット マイクロエレクトロニクス コーポレイション 酸化物および窒化物に選択的な高除去速度および低欠陥のｃｍｐ組成物

Also Published As

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US10639766B2 (en) 2020-05-05
CN107851568B (zh) 2021-10-08
JP6879995B2 (ja) 2021-06-02
KR20180021387A (ko) 2018-03-02
US20180297169A1 (en) 2018-10-18
EP3323142A4 (en) 2019-03-27
JP2018529219A (ja) 2018-10-04
CN107851568A (zh) 2018-03-27
EP4345142A3 (en) 2024-05-29
US10029345B2 (en) 2018-07-24
US20170014969A1 (en) 2017-01-19
TWI626280B (zh) 2018-06-11
EP3323142B1 (en) 2024-08-28
EP4345142A2 (en) 2024-04-03
TW201718792A (zh) 2017-06-01
WO2017011451A1 (en) 2017-01-19
EP3323142A1 (en) 2018-05-23

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