CN107851568B - 用于加工介电基板的方法及组合物 - Google Patents

用于加工介电基板的方法及组合物 Download PDF

Info

Publication number
CN107851568B
CN107851568B CN201680041504.5A CN201680041504A CN107851568B CN 107851568 B CN107851568 B CN 107851568B CN 201680041504 A CN201680041504 A CN 201680041504A CN 107851568 B CN107851568 B CN 107851568B
Authority
CN
China
Prior art keywords
polishing
composition
particles
abrasive particles
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680041504.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN107851568A (zh
Inventor
林越
崔骥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
CMC Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CMC Materials LLC filed Critical CMC Materials LLC
Publication of CN107851568A publication Critical patent/CN107851568A/zh
Application granted granted Critical
Publication of CN107851568B publication Critical patent/CN107851568B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN201680041504.5A 2015-07-13 2016-07-12 用于加工介电基板的方法及组合物 Active CN107851568B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562191824P 2015-07-13 2015-07-13
US62/191,824 2015-07-13
PCT/US2016/041887 WO2017011451A1 (en) 2015-07-13 2016-07-12 Methods and compositions for processing dielectric substrate

Publications (2)

Publication Number Publication Date
CN107851568A CN107851568A (zh) 2018-03-27
CN107851568B true CN107851568B (zh) 2021-10-08

Family

ID=57757573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680041504.5A Active CN107851568B (zh) 2015-07-13 2016-07-12 用于加工介电基板的方法及组合物

Country Status (7)

Country Link
US (2) US10029345B2 (enExample)
EP (2) EP3323142B1 (enExample)
JP (1) JP6879995B2 (enExample)
KR (1) KR102690419B1 (enExample)
CN (1) CN107851568B (enExample)
TW (1) TWI626280B (enExample)
WO (1) WO2017011451A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102670778B1 (ko) * 2015-09-03 2024-05-29 씨엠씨 머티리얼즈 엘엘씨 유전체 기판 처리를 위한 방법 및 조성물
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
TWI673357B (zh) * 2016-12-14 2019-10-01 美商卡博特微電子公司 自化學機械平坦化基板移除殘留物之組合物及方法
JP7132942B2 (ja) * 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
JP6985116B2 (ja) * 2017-11-17 2021-12-22 信越化学工業株式会社 合成石英ガラス基板用の研磨剤及び合成石英ガラス基板の研磨方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
KR102241941B1 (ko) * 2018-12-28 2021-04-20 주식회사 케이씨텍 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법
TWI826878B (zh) * 2020-12-21 2023-12-21 美商Ｃｍｃ材料有限責任公司 用於高拓樸選擇性的自停止性拋光組合物與方法
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
WO2025207608A1 (en) * 2024-03-25 2025-10-02 Entegris, Inc. Ceria and hydroxamic acid cmp composition

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JP3496585B2 (ja) * 1999-08-18 2004-02-16 日立化成工業株式会社 基板の研磨方法
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2004297035A (ja) * 2003-03-13 2004-10-21 Hitachi Chem Co Ltd 研磨剤、研磨方法及び電子部品の製造方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
US7955520B2 (en) 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8435421B2 (en) 2007-11-27 2013-05-07 Cabot Microelectronics Corporation Metal-passivating CMP compositions and methods
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
TWI538970B (zh) * 2010-09-08 2016-06-21 巴斯夫歐洲公司 化學機械研磨含有氧化矽介電質薄膜及多晶矽及／或氮化矽薄膜之基材的方法
JP5965906B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法
MY163010A (en) * 2011-01-11 2017-07-31 Cabot Microelectronics Corp Metal-passivating cmp compositions and methods
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions

Also Published As

Publication number Publication date
US10639766B2 (en) 2020-05-05
JP6879995B2 (ja) 2021-06-02
KR20180021387A (ko) 2018-03-02
US20180297169A1 (en) 2018-10-18
EP3323142A4 (en) 2019-03-27
JP2018529219A (ja) 2018-10-04
KR102690419B1 (ko) 2024-08-01
CN107851568A (zh) 2018-03-27
EP4345142A3 (en) 2024-05-29
US10029345B2 (en) 2018-07-24
US20170014969A1 (en) 2017-01-19
TWI626280B (zh) 2018-06-11
EP3323142B1 (en) 2024-08-28
EP4345142A2 (en) 2024-04-03
TW201718792A (zh) 2017-06-01
WO2017011451A1 (en) 2017-01-19
EP3323142A1 (en) 2018-05-23

Similar Documents

Publication Publication Date Title
CN107851568B (zh) 用于加工介电基板的方法及组合物
CN108026412B (zh) 用于加工介电基板的方法及组合物
KR102650942B1 (ko) 세리아 연마제를 함유하는 연마 조성물
TWI580768B (zh) 含有氧化鈰粒子之拋光組合物及使用方法
CN108699396B (zh) 包含烷基胺及环糊精的化学机械抛光加工组合物

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: Illinois, USA

Applicant after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Applicant before: Cabot Microelectronics Corp.

GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, America

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, America

Patentee before: CMC Materials Co.,Ltd.