KR102685023B1 - 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 - Google Patents
반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 Download PDFInfo
- Publication number
- KR102685023B1 KR102685023B1 KR1020237035081A KR20237035081A KR102685023B1 KR 102685023 B1 KR102685023 B1 KR 102685023B1 KR 1020237035081 A KR1020237035081 A KR 1020237035081A KR 20237035081 A KR20237035081 A KR 20237035081A KR 102685023 B1 KR102685023 B1 KR 102685023B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- protective film
- reflective mask
- mask blank
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 230000001681 protective effect Effects 0.000 claims abstract description 160
- 238000010521 absorption reaction Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 84
- 238000005530 etching Methods 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052758 niobium Inorganic materials 0.000 claims description 12
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 119
- 230000015572 biosynthetic process Effects 0.000 description 53
- 230000001133 acceleration Effects 0.000 description 16
- 238000001659 ion-beam spectroscopy Methods 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000009499 grossing Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000000275 quality assurance Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- -1 Sulfuric acid peroxide Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247023066A KR102882943B1 (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2022-061684 | 2022-04-01 | ||
| JP2022061684 | 2022-04-01 | ||
| PCT/JP2023/012236 WO2023190360A1 (ja) | 2022-04-01 | 2023-03-27 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247023066A Division KR102882943B1 (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230156410A KR20230156410A (ko) | 2023-11-14 |
| KR102685023B1 true KR102685023B1 (ko) | 2024-07-16 |
Family
ID=88202236
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237035081A Active KR102685023B1 (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR1020257034808A Pending KR20250153884A (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR1020247023066A Active KR102882943B1 (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257034808A Pending KR20250153884A (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR1020247023066A Active KR102882943B1 (ko) | 2022-04-01 | 2023-03-27 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US12001133B2 (enExample) |
| JP (3) | JP7367902B1 (enExample) |
| KR (3) | KR102685023B1 (enExample) |
| TW (3) | TWI896295B (enExample) |
| WO (1) | WO2023190360A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7731951B2 (ja) * | 2023-10-05 | 2025-09-01 | レーザーテック株式会社 | 画像処理装置、検査装置、画像処理方法及び検査方法 |
| JPWO2025079375A1 (enExample) * | 2023-10-10 | 2025-04-17 | ||
| JP7747246B1 (ja) * | 2023-11-29 | 2025-10-01 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| WO2025253899A1 (ja) * | 2024-06-03 | 2025-12-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004517484A (ja) | 2001-01-03 | 2004-06-10 | イーユーヴィー リミテッド リアビリティ コーポレーション | 極紫外線リソグラフィー用の自己浄化光学装置 |
| JP2008293032A (ja) | 2001-07-03 | 2008-12-04 | Euv Llc | 不動態化保護膜二重層 |
| JP2012129520A (ja) * | 2010-12-14 | 2012-07-05 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法、および該マスクブランクス用の機能膜付基板の製造方法 |
| JP2021128247A (ja) * | 2020-02-13 | 2021-09-02 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP2021184108A (ja) | 2020-03-27 | 2021-12-02 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006283053A (ja) * | 2005-03-31 | 2006-10-19 | Hoya Corp | スパッタリングターゲット、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
| US20060237303A1 (en) | 2005-03-31 | 2006-10-26 | Hoya Corporation | Sputtering target, method of manufacturing a multilayer reflective film coated substrate, method of manufacturing a reflective mask blank, and method of manufacturing a reflective mask |
| DE102012222466A1 (de) * | 2012-12-06 | 2014-06-12 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
| JP6377361B2 (ja) | 2013-02-11 | 2018-08-22 | Hoya株式会社 | 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
| JP2015073013A (ja) * | 2013-10-03 | 2015-04-16 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| JP6861095B2 (ja) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| JP6845122B2 (ja) * | 2017-11-27 | 2021-03-17 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| KR102402767B1 (ko) * | 2017-12-21 | 2022-05-26 | 삼성전자주식회사 | 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법 |
| US20220091498A1 (en) * | 2019-03-13 | 2022-03-24 | Hoya Corporation | Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device |
| JP7587378B2 (ja) * | 2019-09-30 | 2024-11-20 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| US20210096456A1 (en) | 2019-09-30 | 2021-04-01 | Hoya Corporation | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device |
| JP6929983B1 (ja) * | 2020-03-10 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法 |
| JP7318607B2 (ja) * | 2020-07-28 | 2023-08-01 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
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2023
- 2023-03-27 KR KR1020237035081A patent/KR102685023B1/ko active Active
- 2023-03-27 KR KR1020257034808A patent/KR20250153884A/ko active Pending
- 2023-03-27 JP JP2023548742A patent/JP7367902B1/ja active Active
- 2023-03-27 KR KR1020247023066A patent/KR102882943B1/ko active Active
- 2023-03-27 WO PCT/JP2023/012236 patent/WO2023190360A1/ja not_active Ceased
- 2023-03-29 TW TW113131113A patent/TWI896295B/zh active
- 2023-03-29 TW TW112111880A patent/TWI856588B/zh active
- 2023-03-29 TW TW114129628A patent/TW202544547A/zh unknown
- 2023-10-04 JP JP2023172712A patent/JP7529119B2/ja active Active
- 2023-10-20 US US18/382,356 patent/US12001133B2/en active Active
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2024
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| JP2004517484A (ja) | 2001-01-03 | 2004-06-10 | イーユーヴィー リミテッド リアビリティ コーポレーション | 極紫外線リソグラフィー用の自己浄化光学装置 |
| JP2008293032A (ja) | 2001-07-03 | 2008-12-04 | Euv Llc | 不動態化保護膜二重層 |
| JP2012129520A (ja) * | 2010-12-14 | 2012-07-05 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法、および該マスクブランクス用の機能膜付基板の製造方法 |
| JP2021128247A (ja) * | 2020-02-13 | 2021-09-02 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP2021184108A (ja) | 2020-03-27 | 2021-12-02 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法 |
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| JPWO2023190360A1 (enExample) | 2023-10-05 |
| US12306530B2 (en) | 2025-05-20 |
| US20240280890A1 (en) | 2024-08-22 |
| TWI856588B (zh) | 2024-09-21 |
| US20250251658A1 (en) | 2025-08-07 |
| TW202544547A (zh) | 2025-11-16 |
| JP7529119B2 (ja) | 2024-08-06 |
| KR20230156410A (ko) | 2023-11-14 |
| TWI896295B (zh) | 2025-09-01 |
| JP2023171930A (ja) | 2023-12-05 |
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| KR20240115334A (ko) | 2024-07-25 |
| KR102882943B1 (ko) | 2025-11-07 |
| TW202403432A (zh) | 2024-01-16 |
| US20240045320A1 (en) | 2024-02-08 |
| JP2024133671A (ja) | 2024-10-02 |
| KR20250153884A (ko) | 2025-10-27 |
| US12001133B2 (en) | 2024-06-04 |
| TW202447329A (zh) | 2024-12-01 |
| JP7367902B1 (ja) | 2023-10-24 |
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