TWI896295B - 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 - Google Patents

反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法

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Publication number
TWI896295B
TWI896295B TW113131113A TW113131113A TWI896295B TW I896295 B TWI896295 B TW I896295B TW 113131113 A TW113131113 A TW 113131113A TW 113131113 A TW113131113 A TW 113131113A TW I896295 B TWI896295 B TW I896295B
Authority
TW
Taiwan
Prior art keywords
film
protective film
reflective mask
reflective
mask substrate
Prior art date
Application number
TW113131113A
Other languages
English (en)
Chinese (zh)
Other versions
TW202447329A (zh
Inventor
加藤匠馬
赤木大二郎
岡東健
大石竜輔
小野佑介
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202447329A publication Critical patent/TW202447329A/zh
Application granted granted Critical
Publication of TWI896295B publication Critical patent/TWI896295B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW113131113A 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 TWI896295B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-061684 2022-04-01
JP2022061684 2022-04-01

Publications (2)

Publication Number Publication Date
TW202447329A TW202447329A (zh) 2024-12-01
TWI896295B true TWI896295B (zh) 2025-09-01

Family

ID=88202236

Family Applications (3)

Application Number Title Priority Date Filing Date
TW113131113A TWI896295B (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TW112111880A TWI856588B (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TW114129628A TW202544547A (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法

Family Applications After (2)

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TW112111880A TWI856588B (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TW114129628A TW202544547A (zh) 2022-04-01 2023-03-29 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法

Country Status (5)

Country Link
US (3) US12001133B2 (enExample)
JP (3) JP7367902B1 (enExample)
KR (3) KR102685023B1 (enExample)
TW (3) TWI896295B (enExample)
WO (1) WO2023190360A1 (enExample)

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JP7731951B2 (ja) * 2023-10-05 2025-09-01 レーザーテック株式会社 画像処理装置、検査装置、画像処理方法及び検査方法
JPWO2025079375A1 (enExample) * 2023-10-10 2025-04-17
JP7747246B1 (ja) * 2023-11-29 2025-10-01 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法

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CN112666788A (zh) * 2019-09-30 2021-04-16 Hoya株式会社 带多层反射膜的基板、反射型掩模坯料、反射型掩模及制造方法、及半导体装置制造方法
WO2021193089A1 (ja) * 2020-03-27 2021-09-30 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
TW202141166A (zh) * 2020-03-30 2021-11-01 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
US20220035234A1 (en) * 2020-07-28 2022-02-03 AGC Inc. Reflective mask blank for euv lithography, mask blank for euv lithography, and manufacturing methods thereof

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US20030008148A1 (en) 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
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US20060237303A1 (en) 2005-03-31 2006-10-26 Hoya Corporation Sputtering target, method of manufacturing a multilayer reflective film coated substrate, method of manufacturing a reflective mask blank, and method of manufacturing a reflective mask
US8562794B2 (en) 2010-12-14 2013-10-22 Asahi Glass Company, Limited Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank
DE102012222466A1 (de) * 2012-12-06 2014-06-12 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
JP6377361B2 (ja) 2013-02-11 2018-08-22 Hoya株式会社 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2015073013A (ja) * 2013-10-03 2015-04-16 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6845122B2 (ja) * 2017-11-27 2021-03-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR102402767B1 (ko) * 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법
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JP7475154B2 (ja) * 2020-02-13 2024-04-26 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法

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CN112666788A (zh) * 2019-09-30 2021-04-16 Hoya株式会社 带多层反射膜的基板、反射型掩模坯料、反射型掩模及制造方法、及半导体装置制造方法
WO2021193089A1 (ja) * 2020-03-27 2021-09-30 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
TW202141166A (zh) * 2020-03-30 2021-11-01 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
US20220035234A1 (en) * 2020-07-28 2022-02-03 AGC Inc. Reflective mask blank for euv lithography, mask blank for euv lithography, and manufacturing methods thereof

Also Published As

Publication number Publication date
JPWO2023190360A1 (enExample) 2023-10-05
US12306530B2 (en) 2025-05-20
US20240280890A1 (en) 2024-08-22
TWI856588B (zh) 2024-09-21
US20250251658A1 (en) 2025-08-07
TW202544547A (zh) 2025-11-16
JP7529119B2 (ja) 2024-08-06
KR20230156410A (ko) 2023-11-14
JP2023171930A (ja) 2023-12-05
WO2023190360A1 (ja) 2023-10-05
KR20240115334A (ko) 2024-07-25
KR102882943B1 (ko) 2025-11-07
TW202403432A (zh) 2024-01-16
US20240045320A1 (en) 2024-02-08
JP2024133671A (ja) 2024-10-02
KR20250153884A (ko) 2025-10-27
US12001133B2 (en) 2024-06-04
KR102685023B1 (ko) 2024-07-16
TW202447329A (zh) 2024-12-01
JP7367902B1 (ja) 2023-10-24

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