KR102652645B1 - 발광 장치 및 이를 구비하는 표시 장치 - Google Patents
발광 장치 및 이를 구비하는 표시 장치 Download PDFInfo
- Publication number
- KR102652645B1 KR102652645B1 KR1020180104802A KR20180104802A KR102652645B1 KR 102652645 B1 KR102652645 B1 KR 102652645B1 KR 1020180104802 A KR1020180104802 A KR 1020180104802A KR 20180104802 A KR20180104802 A KR 20180104802A KR 102652645 B1 KR102652645 B1 KR 102652645B1
- Authority
- KR
- South Korea
- Prior art keywords
- color
- light
- sub
- pixel
- disposed
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 172
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000006243 chemical reaction Methods 0.000 claims description 63
- 238000005192 partition Methods 0.000 claims description 41
- 239000000049 pigment Substances 0.000 claims description 29
- 239000002096 quantum dot Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 21
- 238000000149 argon plasma sintering Methods 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 311
- 239000004065 semiconductor Substances 0.000 description 54
- 239000010408 film Substances 0.000 description 34
- 150000001875 compounds Chemical class 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 239000000470 constituent Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 101000836906 Homo sapiens Signal-induced proliferation-associated protein 1 Proteins 0.000 description 7
- 102100027163 Signal-induced proliferation-associated protein 1 Human genes 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 101150089655 Ins2 gene Proteins 0.000 description 6
- 101100072652 Xenopus laevis ins-b gene Proteins 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 101100179596 Caenorhabditis elegans ins-3 gene Proteins 0.000 description 4
- 101100179594 Caenorhabditis elegans ins-4 gene Proteins 0.000 description 4
- -1 InGaN Inorganic materials 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 101100072420 Caenorhabditis elegans ins-5 gene Proteins 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 241000764773 Inna Species 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 101100397598 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) JNM1 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 101100397001 Xenopus laevis ins-a gene Proteins 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 101150032953 ins1 gene Proteins 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180104802A KR102652645B1 (ko) | 2018-09-03 | 2018-09-03 | 발광 장치 및 이를 구비하는 표시 장치 |
PCT/KR2019/002373 WO2020050467A1 (fr) | 2018-09-03 | 2019-02-27 | Dispositif électroluminescent et dispositif d'affichage le comprenant |
EP19858503.6A EP3848969A4 (fr) | 2018-09-03 | 2019-02-27 | Dispositif électroluminescent et dispositif d'affichage le comprenant |
CN201980057630.3A CN112640114A (zh) | 2018-09-03 | 2019-02-27 | 发光器件和包括该发光器件的显示装置 |
US17/272,825 US20210217739A1 (en) | 2018-09-03 | 2019-02-27 | Light-emitting device and display device including same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180104802A KR102652645B1 (ko) | 2018-09-03 | 2018-09-03 | 발광 장치 및 이를 구비하는 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200027136A KR20200027136A (ko) | 2020-03-12 |
KR102652645B1 true KR102652645B1 (ko) | 2024-04-02 |
Family
ID=69722692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020180104802A KR102652645B1 (ko) | 2018-09-03 | 2018-09-03 | 발광 장치 및 이를 구비하는 표시 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210217739A1 (fr) |
EP (1) | EP3848969A4 (fr) |
KR (1) | KR102652645B1 (fr) |
CN (1) | CN112640114A (fr) |
WO (1) | WO2020050467A1 (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102551354B1 (ko) * | 2018-04-20 | 2023-07-04 | 삼성전자 주식회사 | 반도체 발광 소자 및 그 제조 방법 |
KR102524569B1 (ko) * | 2018-09-21 | 2023-04-24 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
KR20200105598A (ko) * | 2019-02-28 | 2020-09-08 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112242411A (zh) * | 2019-07-16 | 2021-01-19 | 群创光电股份有限公司 | 显示装置 |
KR20210059075A (ko) * | 2019-11-13 | 2021-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210065239A (ko) * | 2019-11-26 | 2021-06-04 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210124564A (ko) * | 2020-04-03 | 2021-10-15 | 삼성디스플레이 주식회사 | 표시 장치 |
WO2021216684A1 (fr) * | 2020-04-21 | 2021-10-28 | Jade Bird Display (shanghai) Limited | Structures de puce de diode électroluminescente à éléments réfléchissants |
US11811005B2 (en) | 2020-04-21 | 2023-11-07 | Jade Bird Display (shanghai) Limited | Light-emitting diode chip structures with reflective elements |
KR20210132782A (ko) * | 2020-04-27 | 2021-11-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
TW202228111A (zh) | 2020-06-03 | 2022-07-16 | 中國大陸商上海顯耀顯示科技有限公司 | 用於具有水平光發射的多色led像素單元的系統及方法 |
WO2021261807A1 (fr) * | 2020-06-25 | 2021-12-30 | 삼성전자주식회사 | Substrat de transistor à couches minces et module d'affichage le comprenant |
KR20220002798A (ko) | 2020-06-30 | 2022-01-07 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220006164A (ko) | 2020-07-07 | 2022-01-17 | 삼성디스플레이 주식회사 | 표시 장치 |
US20230275181A1 (en) * | 2020-07-21 | 2023-08-31 | Lg Electronics Inc. | Transfer substrate used for manufacturing display device, display device, and method for manufacturing display device |
KR20220014390A (ko) | 2020-07-24 | 2022-02-07 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220021946A (ko) | 2020-08-13 | 2022-02-23 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조 방법 및 표시 장치 |
KR20220028555A (ko) | 2020-08-28 | 2022-03-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20220039914A (ko) | 2020-09-21 | 2022-03-30 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220053765A (ko) * | 2020-10-22 | 2022-05-02 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220054507A (ko) * | 2020-10-23 | 2022-05-03 | 삼성디스플레이 주식회사 | 화소 및 이를 구비한 표시 장치 |
KR20220063871A (ko) * | 2020-11-10 | 2022-05-18 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220067555A (ko) * | 2020-11-16 | 2022-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220067647A (ko) * | 2020-11-17 | 2022-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102476734B1 (ko) * | 2020-11-26 | 2022-12-12 | 한국광기술원 | 투명 디스플레이용 플렉시블 led 패키지 및 그의 제조 방법 |
KR20220078798A (ko) * | 2020-12-03 | 2022-06-13 | 삼성디스플레이 주식회사 | 화소 및 이를 포함한 표시 장치 |
KR20220099145A (ko) * | 2021-01-04 | 2022-07-13 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220112316A (ko) * | 2021-02-03 | 2022-08-11 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20220143225A (ko) * | 2021-04-15 | 2022-10-25 | 삼성디스플레이 주식회사 | 화소 및 이를 구비한 표시 장치 |
KR20220155793A (ko) * | 2021-05-17 | 2022-11-24 | 삼성전자주식회사 | 디스플레이 모듈 및 이를 포함하는 전자 장치 |
KR20230001048A (ko) * | 2021-06-25 | 2023-01-04 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20230043297A (ko) * | 2021-09-23 | 2023-03-31 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20230045733A (ko) * | 2021-09-28 | 2023-04-05 | 삼성디스플레이 주식회사 | 화소 및 이를 구비한 표시 장치 |
KR20230053798A (ko) * | 2021-10-14 | 2023-04-24 | 삼성디스플레이 주식회사 | 표시 장치 |
CN114005919A (zh) * | 2021-10-28 | 2022-02-01 | 錼创显示科技股份有限公司 | 微型发光二极管显示面板及其形成方法 |
KR20230084358A (ko) * | 2021-12-03 | 2023-06-13 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
WO2023121403A1 (fr) * | 2021-12-24 | 2023-06-29 | 삼성전자 주식회사 | Panneau d'affichage et dispositif d'affichage le comprenant |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089221A1 (fr) * | 2001-04-23 | 2002-11-07 | Matsushita Electric Works, Ltd. | Dispositif electroluminescent comprenant une puce de diode electroluminescente (del) |
KR20100047564A (ko) * | 2008-10-29 | 2010-05-10 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP4814394B2 (ja) * | 2010-03-05 | 2011-11-16 | シャープ株式会社 | 発光装置の製造方法 |
JP5927520B2 (ja) * | 2011-11-16 | 2016-06-01 | 株式会社Joled | 表示パネルの製造方法 |
US9029880B2 (en) * | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
KR102090709B1 (ko) * | 2013-05-31 | 2020-03-19 | 삼성디스플레이 주식회사 | 백색 유기 발광 표시 장치 |
CN103346265B (zh) * | 2013-06-21 | 2016-01-06 | 深圳市华星光电技术有限公司 | 一种发光器件、显示面板及其制造方法 |
KR102465382B1 (ko) * | 2015-08-31 | 2022-11-10 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
KR102402999B1 (ko) * | 2015-08-31 | 2022-05-30 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
US10304813B2 (en) * | 2015-11-05 | 2019-05-28 | Innolux Corporation | Display device having a plurality of bank structures |
KR101797018B1 (ko) * | 2015-11-30 | 2017-11-13 | 엘지디스플레이 주식회사 | 유기발광 표시장치와 그를 포함한 헤드 장착형 디스플레이 |
US10068884B2 (en) * | 2016-04-01 | 2018-09-04 | Seoul Semiconductor Co., Ltd. | Display apparatus and manufacturing method thereof |
KR102550698B1 (ko) * | 2016-04-11 | 2023-07-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 조명 장치 |
KR102610028B1 (ko) * | 2016-04-12 | 2023-12-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR20180066936A (ko) * | 2016-12-09 | 2018-06-20 | 삼성디스플레이 주식회사 | 포토루미네선트 표시장치 |
KR102587215B1 (ko) * | 2016-12-21 | 2023-10-12 | 삼성디스플레이 주식회사 | 발광 장치 및 이를 구비한 표시 장치 |
KR102620661B1 (ko) * | 2017-02-24 | 2024-01-04 | 삼성전자주식회사 | Led 장치 및 제조 방법 |
JPWO2019009033A1 (ja) * | 2017-07-03 | 2020-03-19 | シャープ株式会社 | 光源装置及び発光装置 |
KR102422091B1 (ko) * | 2017-12-07 | 2022-07-18 | 엘지디스플레이 주식회사 | 발광 소자 및 이를 이용한 표시 장치 |
KR102603411B1 (ko) * | 2017-12-18 | 2023-11-16 | 엘지디스플레이 주식회사 | 마이크로led 표시장치 |
KR102448843B1 (ko) * | 2017-12-29 | 2022-09-28 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
-
2018
- 2018-09-03 KR KR1020180104802A patent/KR102652645B1/ko active IP Right Grant
-
2019
- 2019-02-27 CN CN201980057630.3A patent/CN112640114A/zh active Pending
- 2019-02-27 EP EP19858503.6A patent/EP3848969A4/fr active Pending
- 2019-02-27 WO PCT/KR2019/002373 patent/WO2020050467A1/fr unknown
- 2019-02-27 US US17/272,825 patent/US20210217739A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2020050467A1 (fr) | 2020-03-12 |
EP3848969A4 (fr) | 2022-06-01 |
KR20200027136A (ko) | 2020-03-12 |
EP3848969A1 (fr) | 2021-07-14 |
US20210217739A1 (en) | 2021-07-15 |
CN112640114A (zh) | 2021-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102652645B1 (ko) | 발광 장치 및 이를 구비하는 표시 장치 | |
KR102600928B1 (ko) | 발광 표시 장치 및 그의 제조 방법 | |
KR102559514B1 (ko) | 표시 장치 | |
KR102520554B1 (ko) | 발광 장치 및 이를 구비한 표시 장치 | |
EP3968384A1 (fr) | Dispositif d'affichage et son procédé de fabrication | |
US11610938B2 (en) | Display panel and display device including the same | |
KR102666845B1 (ko) | 화소, 이를 구비하는 표시 장치, 및 그의 제조 방법 | |
US11903270B2 (en) | Display device, method of manufacturing the same, and tiled display device having the same | |
US11723241B2 (en) | Display device with reduced parasitic capacitances between pixel electrodes and data lines | |
EP3913658A1 (fr) | Dispositif d'affichage et son procédé de fabrication | |
US11563077B2 (en) | Display device | |
CN113540181A (zh) | 显示装置和具有显示装置的拼接显示装置 | |
KR20220001025A (ko) | 표시 장치 | |
KR20220091697A (ko) | 표시 장치 및 그 리페어 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |