KR102652645B1 - 발광 장치 및 이를 구비하는 표시 장치 - Google Patents

발광 장치 및 이를 구비하는 표시 장치 Download PDF

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KR102652645B1
KR102652645B1 KR1020180104802A KR20180104802A KR102652645B1 KR 102652645 B1 KR102652645 B1 KR 102652645B1 KR 1020180104802 A KR1020180104802 A KR 1020180104802A KR 20180104802 A KR20180104802 A KR 20180104802A KR 102652645 B1 KR102652645 B1 KR 102652645B1
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color
light
sub
pixel
disposed
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KR1020180104802A
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KR20200027136A (ko
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이희근
공태진
김대현
신흥 이
태창일
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삼성디스플레이 주식회사
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Priority to KR1020180104802A priority Critical patent/KR102652645B1/ko
Priority to PCT/KR2019/002373 priority patent/WO2020050467A1/fr
Priority to EP19858503.6A priority patent/EP3848969A4/fr
Priority to CN201980057630.3A priority patent/CN112640114A/zh
Priority to US17/272,825 priority patent/US20210217739A1/en
Publication of KR20200027136A publication Critical patent/KR20200027136A/ko
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Publication of KR102652645B1 publication Critical patent/KR102652645B1/ko

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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
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    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
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    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L2933/0091Scattering means in or on the semiconductor body or semiconductor body package
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
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    • H01L33/502Wavelength conversion materials
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    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180104802A 2018-09-03 2018-09-03 발광 장치 및 이를 구비하는 표시 장치 KR102652645B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020180104802A KR102652645B1 (ko) 2018-09-03 2018-09-03 발광 장치 및 이를 구비하는 표시 장치
PCT/KR2019/002373 WO2020050467A1 (fr) 2018-09-03 2019-02-27 Dispositif électroluminescent et dispositif d'affichage le comprenant
EP19858503.6A EP3848969A4 (fr) 2018-09-03 2019-02-27 Dispositif électroluminescent et dispositif d'affichage le comprenant
CN201980057630.3A CN112640114A (zh) 2018-09-03 2019-02-27 发光器件和包括该发光器件的显示装置
US17/272,825 US20210217739A1 (en) 2018-09-03 2019-02-27 Light-emitting device and display device including same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180104802A KR102652645B1 (ko) 2018-09-03 2018-09-03 발광 장치 및 이를 구비하는 표시 장치

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KR20200027136A KR20200027136A (ko) 2020-03-12
KR102652645B1 true KR102652645B1 (ko) 2024-04-02

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US (1) US20210217739A1 (fr)
EP (1) EP3848969A4 (fr)
KR (1) KR102652645B1 (fr)
CN (1) CN112640114A (fr)
WO (1) WO2020050467A1 (fr)

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KR102524569B1 (ko) * 2018-09-21 2023-04-24 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20200105598A (ko) * 2019-02-28 2020-09-08 삼성디스플레이 주식회사 표시 장치
CN112242411A (zh) * 2019-07-16 2021-01-19 群创光电股份有限公司 显示装置
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KR20220014390A (ko) 2020-07-24 2022-02-07 삼성디스플레이 주식회사 표시 장치
KR20220021946A (ko) 2020-08-13 2022-02-23 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
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KR20220053765A (ko) * 2020-10-22 2022-05-02 삼성디스플레이 주식회사 표시 장치
KR20220054507A (ko) * 2020-10-23 2022-05-03 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
KR20220063871A (ko) * 2020-11-10 2022-05-18 삼성디스플레이 주식회사 표시 장치
KR20220067555A (ko) * 2020-11-16 2022-05-25 삼성디스플레이 주식회사 표시 장치
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KR20220078798A (ko) * 2020-12-03 2022-06-13 삼성디스플레이 주식회사 화소 및 이를 포함한 표시 장치
KR20220099145A (ko) * 2021-01-04 2022-07-13 삼성디스플레이 주식회사 표시 장치
KR20220112316A (ko) * 2021-02-03 2022-08-11 삼성디스플레이 주식회사 표시 장치
KR20220143225A (ko) * 2021-04-15 2022-10-25 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
KR20220155793A (ko) * 2021-05-17 2022-11-24 삼성전자주식회사 디스플레이 모듈 및 이를 포함하는 전자 장치
KR20230001048A (ko) * 2021-06-25 2023-01-04 삼성디스플레이 주식회사 표시 장치
KR20230043297A (ko) * 2021-09-23 2023-03-31 삼성디스플레이 주식회사 표시 장치
KR20230045733A (ko) * 2021-09-28 2023-04-05 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
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KR102422091B1 (ko) * 2017-12-07 2022-07-18 엘지디스플레이 주식회사 발광 소자 및 이를 이용한 표시 장치
KR102603411B1 (ko) * 2017-12-18 2023-11-16 엘지디스플레이 주식회사 마이크로led 표시장치
KR102448843B1 (ko) * 2017-12-29 2022-09-28 엘지디스플레이 주식회사 유기전계발광 표시장치 및 그 제조방법

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EP3848969A4 (fr) 2022-06-01
KR20200027136A (ko) 2020-03-12
EP3848969A1 (fr) 2021-07-14
US20210217739A1 (en) 2021-07-15
CN112640114A (zh) 2021-04-09

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