KR102652144B1 - Method for detecting line to be divided - Google Patents

Abstract

The object of the present invention is to provide a method for detecting a scheduled division line that reduces the possibility that cutting chips resulting from processing will adhere to the device chip.
The detection method of the division line of the present invention is a detection method for detecting the division line for dividing a semiconductor device having a plurality of device chips sealed in resin into individual device chips, and includes a holding step (ST1) and an ultrasonic measurement step. (ST2) and a detection step (ST3). In the holding step (ST1), the semiconductor device is held on a holding table. In the ultrasonic measurement step (ST2), the semiconductor device held on the holding table and the ultrasonic probe functioning as an ultrasonic irradiation means are relatively moved in the horizontal direction at predetermined intervals while irradiating ultrasonic waves to a predetermined thickness portion of the semiconductor device to generate a reflected echo. Measure. In the detection step (ST3), the division line is detected from the distribution of the reflected echo.

Description

Method for detecting line scheduled to be divided {METHOD FOR DETECTING LINE TO BE DIVIDED}

The present invention relates to a method for detecting a line scheduled to be divided.

When dividing a semiconductor device having a plurality of device chips sealed in resin for each device chip, in order to recognize the line to be divided, a method is used to remove the outer peripheral part of the semiconductor device and expose the resin embedded in the groove of the line to be divided. It is known (e.g., patent document 1).

Japanese Patent Publication No. 2017-117990

However, in the method of Patent Document 1, there was a problem that by processing the outer peripheral portion of the semiconductor device, cutting chips resulting from processing of the outer peripheral portion may adhere to the device chip.

The present invention was made in view of these problems, and its purpose is to provide a method for detecting a line to be divided that reduces the possibility that cutting chips resulting from processing will adhere to the device chip.

In order to solve the above-mentioned problems and achieve the object, the method of detecting a division line of the present invention is to divide a semiconductor device having a plurality of device chips sealed in resin into individual devices for each device chip. A detection method for detecting a predetermined line, comprising: a holding step of holding the semiconductor device on a holding table; moving the semiconductor device held on the holding table and ultrasonic irradiation means relative to each other in the horizontal direction at predetermined intervals; It is characterized by comprising an ultrasonic measurement step of measuring a reflected echo by irradiating ultrasonic waves to a predetermined thickness portion, and a detection step of detecting the division line from the distribution of the reflected echo.

The detection step may further include an image processing step of converting the reflection echo into image data having color information, and detecting the division line according to the color information of the image data.

Before performing the ultrasonic measurement step, the semiconductor device and the ultrasonic irradiation means are relatively moved in the thickness direction of the semiconductor device at predetermined intervals while irradiating ultrasonic waves to the inside of the semiconductor device to measure a preparatory reflection echo. Ultrasonic measurement and a preparatory detection step of determining a position to irradiate ultrasonic waves in the ultrasonic measurement step from the distribution of the preparatory reflection echo in the thickness direction of the semiconductor device.

The preparation detection step further includes a preparation image processing step of converting the preparation reflection echo into preparation image data having color information, and irradiating ultrasonic waves according to the color information of the preparation image data in the ultrasonic measurement step. You can also decide on the location where you want to do it.

The method for detecting a line scheduled to be divided according to the present invention has the effect of reducing the possibility that cutting chips resulting from processing will adhere to the device chip.

1 is a surface diagram showing an example of a semiconductor device subject to a method for detecting a scheduled division line according to Embodiment 1.
FIG. 2 is a II-II cross-sectional view of the semiconductor device of FIG. 1.
Fig. 3 is a perspective view showing a configuration example of a cutting device including a detection device for a scheduled division line used in the method for detecting a scheduled division line according to Embodiment 1.
FIG. 4 is a cross-sectional view taken along line IV-IV of the ultrasonic inspection unit included in the cutting device of FIG. 3.
Figure 5 is a flowchart of a method for detecting a line scheduled to be divided according to Embodiment 1.
FIG. 6 is an explanatory diagram explaining the ultrasonic measurement step of FIG. 5.
FIG. 7 is an explanatory diagram showing an example of a reflected echo measured in the ultrasonic measurement step of FIG. 5.
FIG. 8 is an explanatory diagram showing another example of a reflected echo measured in the ultrasonic measurement step of FIG. 5.
FIG. 9 is an explanatory diagram showing an example of image data obtained in the image processing step of FIG. 5.
Fig. 10 is a flowchart of a method for detecting a line scheduled to be divided according to Embodiment 2.
FIG. 11 is an explanatory diagram illustrating the preparatory ultrasonic measurement step of FIG. 10.
FIG. 12 is an explanatory diagram showing an example of a preparatory reflection echo measured in the preparatory ultrasonic measurement step of FIG. 10.
FIG. 13 is an explanatory diagram showing another example of a preparatory reflection echo measured in the preparatory ultrasonic measurement step of FIG. 10.
FIG. 14 is an explanatory diagram showing an example of preparation image data obtained in the preparation image processing step of FIG. 10.
FIG. 15 is an explanatory diagram showing another example of preparation image data obtained in the preparation image processing step of FIG. 10.
Fig. 16 is a schematic configuration diagram showing an example of the configuration of a detection device for a scheduled division line used in the method for detecting a scheduled division line according to Embodiment 3.
Fig. 17 is a flowchart showing an example of a method for detecting a line scheduled to be divided according to Embodiment 3.
Fig. 18 is a flowchart showing another example of a method for detecting a division line scheduled according to Embodiment 3.
FIG. 19 is a surface diagram showing an example of a semiconductor device subject to the method for detecting a scheduled division line according to Modification 1 of Embodiments 1 to 3.
FIG. 20 is a cross-sectional view taken along line XX-XX of the semiconductor device of FIG. 19.
Fig. 21 is an explanatory diagram showing an example of image data obtained in the image processing step of the method for detecting a line scheduled to be divided according to Modification Example 1 of Embodiments 1 to 3.
FIG. 22 is a surface diagram showing an example of a semiconductor device subject to the method for detecting a scheduled division line according to Modification Example 2 of Embodiments 1 to 3.
FIG. 23 is a cross-sectional view taken along line XXIII-XXIII of the semiconductor device of FIG. 22.

The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the content described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined appropriately. Additionally, various omissions, substitutions, or changes in the structure may be made without departing from the gist of the present invention.

[Embodiment 1]

A method for detecting a line scheduled to be divided according to Embodiment 1 of the present invention will be explained based on the drawings. 1 is a surface diagram showing an example of a semiconductor device 1 subject to a method for detecting a scheduled division line according to Embodiment 1. FIG. 2 is a II-II cross-sectional view of the semiconductor device 1 of FIG. 1.

The method for detecting a division line according to Embodiment 1 is a method for dividing the semiconductor device 1 shown in FIGS. 1 and 2 into individual devices for each device chip 3. As shown in FIGS. 1 and 2, the semiconductor device 1 has a wafer shape, that is, a circular plate shape, and includes a plurality of device chips 3, a resin 4, a division line 5, and an outer peripheral surplus. It has a region (6), a redistribution layer (8), and a solder ball (9).

In the semiconductor device 1, the plurality of device chips 3 are square as shown in FIG. 1 and are two-dimensionally arranged along mutually orthogonal directions. The device chip 3 is a high-integration semiconductor, and is manufactured by dividing a semiconductor wafer or optical device wafer made of silicon, sapphire, gallium, etc. as a base material, and constitutes various memories or LSI (Large Scale Integration), etc. The device chips 3 are arranged on the rewiring layer 8 and sealed with resin 4.

In the semiconductor device 1, the resin 4 covers the plurality of device chips 3, the division line 5, and the outer peripheral surplus area 6 on the surface, as shown in FIGS. 1 and 2, respectively. It's sealed. The resin 4 is preferably an epoxy resin, which is a thermosetting liquid resin. In this case, it is formed to cover the surface of the semiconductor device 1, and after being embedded in the division line 5, 150 It is hardened by heating at about ℃.

In the semiconductor device 1, the division line 5 is formed between two adjacent device chips 3, as shown in FIGS. 1 and 2, respectively, and divides each device chip 3. In addition, this is a home that is scheduled to be divided when each device chip 3 is reorganized. Resin 4 is buried in the division line 5.

In the semiconductor device 1, the outer peripheral surplus area 6 surrounds the device area in which the plurality of device chips 3 are arranged and is an area in which the plurality of device chips 3 are not arranged. The surface of the outer peripheral surplus area 6 is covered with resin 4, as are the plurality of device chips 3 and the division line 5.

As shown in FIG. 2, the rewiring layer 8 is disposed on the back side of the device chip 3, that is, on the side opposite to the side of the device chip 3 covered with the resin 4. The rewiring layer 8 is provided in common with the plurality of device chips 3 and the division line 5. The rewiring layer 8 is a layer provided with wiring that electrically connects the device chip 3 and the printed wiring board on which the device chip 3 is mounted.

As shown in FIG. 2, a plurality of solder balls 9 are uniformly provided on the back side of the re-distribution layer 8, that is, on the side of the re-distribution layer 8 opposite to the side where the device chip 3 is provided. The solder ball 9 is used to electrically conductively bond the rewiring layer 8 to a printed wiring board (not shown) after the semiconductor device 1 is divided into device chips 3.

The semiconductor device 1 shown in FIGS. 1 and 2 includes, for example, dividing a predetermined wafer into device chips 3, arranging the device chips 3 on a redistribution layer 8, and sealing them with resin 4. It is manufactured by becoming. The semiconductor device 1 is divided for each device chip 3 along the division line 5, and is divided into individual package devices 7 shown in FIGS. 1 and 2. The package device 7 includes a rewiring layer 8 on which solder balls 9 are disposed, one device chip 3 mounted on the rewiring layer 8, and a resin sealing the device chip 3 ( 4) is provided. In Embodiment 1, the package device 7 is a Fan Out Wafer Level Package (FOWLP), which is a form of a semiconductor component package that can be completed with a small occupied area when surface mounting the single device chip 3 on a printed circuit board. )am. The FOWLP packaged device 7 has a package area larger than the horizontal area of the device chip 3, and the terminals can be expanded to the outside of the device chip 3 in the horizontal direction, so the device chip 3 has a larger package area. It can be used even in applications where the number of terminals is large compared to the area in the horizontal direction, and in this respect, it is superior to the WLCSP (Wafer Level Chip Size Package) described later.

Next, an example of the cutting device 10 including the detection device 90 of the scheduled division line used in the method of detecting the scheduled division line according to Embodiment 1 will be described. FIG. 3 is a perspective view showing a configuration example of a cutting device 10 including a detection device 90 for a scheduled division line used in the method for detecting a scheduled division line according to Embodiment 1.

The cutting device 10 divides the semiconductor device 1 into device chips 3 by cutting the cutting blade 21 into the semiconductor device 1 along the division line 5, thereby dividing the semiconductor device 1 into semiconductor devices 1. It is a device that separates into individual package devices (7). The cutting device 10 performs alignment by detecting the scheduled division line 5 with the imaging unit 60 for a workpiece for which the division line 5 can be detected by visible light or infrared rays. The cutting device 10 performs alignment on the semiconductor device 1 by detecting the division line 5 using an ultrasonic inspection unit 70, which will be described later.

As shown in FIG. 3, the cutting device 10 includes a holding table 11 for holding the semiconductor device 1 by suction on the holding surface 12, and the semiconductor device 1 held on the holding table 11. A cutting unit 20 that performs cutting along the dividing line 5, and an X-axis movement unit that relatively moves the holding table 11 and the cutting unit 20 in the 30), a Y-axis moving unit 40 that relatively moves the holding table 11 and the cutting unit 20 in the Y-axis direction parallel to the horizontal direction and perpendicular to the X-axis direction, and a holding table 11 A Z-axis moving unit 50 that relatively moves the cutting unit 20 in the Z-axis direction orthogonal to both the X-axis direction and the Y-axis direction, an imaging unit 60, an ultrasonic inspection unit 70, and a control unit (100) is provided.

The holding table 11 has a disk shape in which the portion constituting the holding surface 12 facing upward in the Z-axis direction is made of porous ceramic or the like, and is connected to a vacuum suction source not shown through a vacuum suction path not shown. , the semiconductor device 1 placed on the holding surface 12 is held by suction. Additionally, the holding table 11 is rotated around an axis parallel to the Z-axis direction by the rotation drive source 13.

The X-axis movement unit 30 is a machining transfer means that processes and transports the holding table 11 in the X-axis direction by moving the holding table 11 in the X-axis direction together with the rotation drive source 13. The Y-axis movement unit 40 is an indexing transfer means that indexes and transfers the holding table 11 by moving the cutting unit 20 along with the imaging unit 60 and the ultrasonic inspection unit 70 in the Y-axis direction. The Z-axis movement unit 50 is a cutting transport means that cuts and transports the cutting unit 20 by moving the cutting unit 20 in the Z-axis direction together with the imaging unit 60 and the ultrasonic inspection unit 70. The X-axis movement unit 30, the Y-axis movement unit 40, and the Z-axis movement unit 50 include well-known ball screws 31, 41, 51 and ball screws 31, 41 that are freely rotatable around the axis. , a well-known pulse motor (32, 42, 52) that rotates 51) around the axis, and a holding table (11) or cutting unit (20) that is freely movable in the X-axis direction, Y-axis direction, or Z-axis direction. It is provided with well-known guide rails 33, 43, and 53.

In addition, the cutting device 10 includes an X-direction position detection unit 34 for detecting the position of the holding table 11 in the ), a Y direction position detection unit 44 for detecting the Y direction position, and a Z direction position for detecting the Z direction position of the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70. It has a detection unit 54. The X-direction position detection unit 34 and Y-direction position detection unit 44 are integrated with the linear scales 35 and 45 parallel to the It can be configured by moving read heads (36, 46). The Z-direction position detection unit 54 detects the Z-direction position of the cutting unit 20 using pulses from the pulse motor 52. The X direction position detection unit 34, Y direction position detection unit 44, and Z direction position detection unit 54 are configured to detect the The position of the inspection unit 70 in the Y or Z direction is output to the control unit 100.

The cutting unit 20 includes a spindle 22 that rotates around an axis parallel to the Y-axis direction, and the spindle 22 is moved by the Y-axis moving unit 40 and the Z-axis moving unit 50. It is provided with a spindle housing 23 that moves in the axial direction and the Z-axis direction, and a cutting blade 21 attached to the spindle 22. The cutting blade 21 is a cutting grindstone formed in an ultra-thin ring shape, and is rotated by the spindle 22 around an axis parallel to the Y-axis direction while cutting water is supplied, so that it is held on the holding table 11. The semiconductor device 1 is subjected to cutting processing. The thickness of the cutting edge of the cutting blade 21 of the cutting unit 20 is preferably equal to or less than the width of the division line 5 of the semiconductor device 1.

The imaging unit 60 captures images of the workpiece held on the holding table 11. In Embodiment 1, the imaging unit 60 is installed at a position parallel to the cutting unit 20 in the X-axis direction. The invention is not limited to this. The imaging unit 60 is attached to the spindle housing 23. The imaging unit 60 is comprised of a CCD camera that captures images of the workpiece held on the holding table 11.

The ultrasonic inspection unit 70 inspects the semiconductor device 1 held on the holding table 11 by ultrasonic waves, and is installed in a position parallel to the cutting unit 20 and the imaging unit 60 in the X-axis direction. there is. In Embodiment 1, specifically, the ultrasonic inspection unit 70 is attached to the side of the imaging unit 60 opposite to the side where the cutting unit 20 is located.

FIG. 4 is a cross-sectional view taken along line IV-IV of the ultrasonic inspection unit 70 included in the cutting device 10 of FIG. 3 . The ultrasonic inspection unit 70 includes an ultrasonic probe 71 and a holder 72, as shown in FIG. 4 . As shown in FIG. 3, the ultrasonic probe 71 is electrically connected to the control unit 100 to enable information communication.

The ultrasonic probe 71 has a cylindrical shape with a diameter of approximately 6 mm to 10 mm, and its axis is arranged parallel to the Z-axis direction. The ultrasonic probe 71 is electrically connected to enable information communication with the control unit 100, and irradiates ultrasonic waves downward in the Z-axis direction according to the operation of the ultrasonic measurement unit 110 of the control unit 100. It may operate as an ultrasonic irradiation means or as an ultrasonic detection means that receives and detects ultrasonic waves from the lower side in the Z-axis direction. Details of the operation of the ultrasonic probe 71 will be described later along with a detailed description of the ultrasonic measurement unit 110.

As shown in FIG. 4, the holder 72 is located on the lower side in the Z-axis direction of the ultrasonic probe 71 so as to cover the entire circumference in the X-axis direction and the Y-axis direction of the tip portion on the lower side in the Z-axis direction of the ultrasonic probe 71. It protrudes downward in the Z-axis direction from the tip portion of and is fixed to the ultrasonic probe 71. Accordingly, the holder 72 forms a space 78 having an opening downward in the Z-axis direction in an area lower in the Z-axis direction than the tip portion of the ultrasonic probe 71, as shown in FIG. 4 .

As shown in FIG. 4, the holder 72 has a water supply path 73 for supplying water 79 to the space 78 from the water supply unit 80 installed outside the ultrasonic inspection unit 70. has The water supply path 73 is a through hole that communicates the outer peripheral portion of the holder 72 with the space 78, and the outer peripheral portion of the holder 72 communicates with the water supply unit 80 through a water hose or water pipe, etc. there is.

The water supply unit 80 is a device that functions as a water supply means for supplying water 79 to the space 78 and the space below the space 78 in the Z-axis direction via the water supply path 73. The water supply unit 80 can switch between supplying the water 79 and stopping the supply according to the control of the control unit 100.

The control unit 100 functions as a control means that controls each of the above-described components of the cutting device 10 and causes the cutting device 10 to perform a processing operation for the semiconductor device 1. The control unit 100 includes an arithmetic processing unit having a microprocessor such as a CPU (Central Processing Unit), a storage device having a memory such as ROM (Read Only Memory) or RAM (Random Access Memory), and an input/output interface device. It is a computer that can run computer programs. The arithmetic processing unit of the control unit 100 executes a computer program stored in ROM on RAM and generates a control signal for controlling the cutting device 10. The arithmetic processing unit of the control unit 100 outputs the generated control signal to each component of the cutting device 10 through an input/output interface device. Additionally, the control unit 100 is connected to a display unit 130 composed of a liquid crystal display device that displays the status of machining operations, images, etc., and an input unit (not shown) used by the operator to register machining content information, etc. It is done. The input unit is composed of at least one of a touch panel and a keyboard installed on the display unit 130.

As shown in FIG. 3, the control unit 100 controls each of the above-described components of the cutting device 10, such as the cutting unit 20, the X-axis movement unit 30, the Y-axis movement unit 40, It is electrically connected to the Z-axis movement unit 50, the imaging unit 60, the ultrasonic inspection unit 70, the water supply unit 80, and the display unit 130 to enable information communication, and controls each part.

The control unit 100 detects a cutting unit 20, an imaging unit 60, and an ultrasonic inspection unit from the 70), the cutting unit 20 is obtained by acquiring positional information in the X, Y, and Z directions and controlling the , controls the positions of the imaging unit 60 and the ultrasonic inspection unit 70. Accordingly, the control unit 100 scans and moves the ultrasonic probe 71 along the upper surface of the semiconductor device 1, which is the detection target, in the Z-axis direction. For example, the control unit 100 scans and moves the ultrasonic probe 71 along each measurement point arranged in the X-axis direction and the Y-axis direction at predetermined intervals. Here, this predetermined interval is the measurement pitch, and examples range from hundreds of micrometers to about 1.0 mm, but it is not limited to this and can be appropriately changed depending on the dimensions of the semiconductor device 1 to be detected, etc.

The control unit 100 controls the cutting operation of the cutting unit 20, the imaging operation of the imaging unit 60, and the water supply operation of the water supply unit 80. All of these functions of the control unit 100 are realized by the arithmetic processing unit of the control unit 100 executing the computer program stored in the memory device.

The control unit 100 has an ultrasonic measurement unit 110 and an image processing unit 120, as shown in FIG. 3 . The functions of the ultrasonic measurement unit 110 and the functions of the image processing unit 120 are both realized by the arithmetic processing unit of the control unit 100 executing the computer program stored in the memory device.

The ultrasonic measurement unit 110 is a device that functions as an ultrasonic measurement means that performs ultrasonic measurement using an ultrasonic probe 71. As shown in FIG. 3, it includes an ultrasonic pulser 111, an ultrasonic receiver 112, and Equipped with an ultrasonic detector (113).

The ultrasonic pulser 111 radiates ultrasonic waves to the ultrasonic probe 71 by applying a pulse-type voltage to the ultrasonic probe 71 . The ultrasonic waves irradiated by the ultrasonic probe 71 are reflected from the surface of the resin 4 of the semiconductor device 1, which is the detection target, and the interface between the resin 4 and the device chip 3, etc., to become reflected waves, and the ultrasonic probe 71 ) returns to The ultrasonic probe 71 detects this reflected wave, converts it into a voltage signal, and transmits it to the ultrasonic receiver 112.

The ultrasonic receiver 112 amplifies the voltage signal input from the ultrasonic probe 71 and transmits it to the ultrasonic detector 113. The ultrasonic detector 113 is set with a gate that specifies the time of the reflected echo to be detected, and measures the strength of the voltage signal within this gate. In the method for detecting a division line according to Embodiment 1, the ultrasonic detector 113 is, for example, a gate that detects a voltage signal of a reflected wave reflected from the interface between the resin 4 and the device chip 3 of the semiconductor device 1. is setting. The ultrasonic detector 113 acquires intensity information of the voltage signal within the gate as measurement data.

Additionally, the voltage signal of the reflected wave amplified by the ultrasonic receiver 112 is related to time information between the ultrasonic probe 71 irradiating ultrasonic waves and returning. In this specification, the reflected echo acquired by the ultrasonic receiver 112 is comprised of the voltage signal of the reflected wave and time information related to the voltage signal of the reflected wave. This reflected echo is expressed as a waveform, with the unit of time being μs and the unit of intensity of the voltage signal being V, and a graph with time on the horizontal axis and intensity on the vertical axis. Here, since the time is the propagation time of the ultrasonic wave, the position of the reflected wave in the thickness direction can be obtained by using the propagation speed of the ultrasonic wave for this time information. For this reason, the ultrasonic detector 113 can set a gate that specifies the time of the voltage signal to be detected.

The image processing unit 120 based on the measurement data acquired by the ultrasonic detector 113 and the detection results of the Acquire image data. That is, the image processing unit 120 converts this measurement data into the X-axis direction and the Y-axis direction of the semiconductor device 1 based on the detection results of the It is related to the position and converted into image data with color information. Specifically, the image processing unit 120 determines the intensity of the voltage signal included in the measurement data at each measurement point of the measurement data obtained based on the detection results of the X-direction position detection unit 34 and the Y-direction position detection unit 44. Accordingly, image data as a collection of color information according to the voltage signal at each measurement point is created by converting the measurement data into preset color information. The image processing unit 120, for example, converts this measurement data into image data having RGB information of multiple gray levels (e.g., 256 gray levels). Alternatively, the image processing unit 120 may convert this measurement data into black-and-white image data with brightness information of multiple gray levels (for example, 256 gray levels). The color information included in the image data created by the image processing unit 120 is used when the control unit 100 performs processing to detect the division line 5.

The control unit 100 detects the division line 5 based on the image data acquired by the image processing unit 120. The control unit 100 can transmit image data acquired from the image processing unit 120 to the display unit 130 to display it. The control unit 100 superimposes information on the division line 5 detected based on the image data (e.g., the position of the center of the division line 5 in the width direction) on the image data, and displays the display unit 130. It can be sent to and displayed.

The display unit 130 acquires the image data created by the image processing unit 120 from the control unit 100 and displays it. The display unit 130 can obtain information on the division line 5 detected and acquired by the control unit 100 from the control unit 100 and display it overlaid on the image data. The display unit 130 is exemplified by a liquid crystal display device, and may be a touch panel that also functions as an input device.

The above-described holding table 11 of the cutting device 10 shown in FIG. 3, the ultrasonic inspection unit 70, and the X-axis movement for moving the ultrasonic inspection unit 70 along the The unit 30, the Y-axis movement unit 40 and the Z-axis movement unit 50, the water supply unit 80, and the control unit 100 are used in the detection method of the division line according to Embodiment 1. A division scheduled line detection device 90 is configured to detect the division scheduled line 5. In addition, the ultrasonic inspection unit 70 and the ultrasonic measurement unit 110 relatively move the semiconductor device 1 and the ultrasonic probe 71 held on the holding table 11 in the horizontal direction at predetermined intervals while 1) constitutes an ultrasonic measurement means that measures reflected echoes 150-1, 150-2, and 150-3 (see FIGS. 7 and 8) by irradiating ultrasonic waves to a predetermined thickness portion.

Next, a method for detecting a line scheduled to be divided according to Embodiment 1 will be described. The method for detecting a line to be divided according to Embodiment 1 is the operation of the detection device 90 for a line to be divided. In Embodiment 1, the cutting device 10 reorganizes the semiconductor device 1 into device chips 3. This is a method of detecting a division line 5 to be divided and dividing the semiconductor device 1 into individual package devices 7 according to the division line 5 detected by the cutting device 10. Fig. 5 is a flowchart showing a method for detecting a line scheduled to be divided according to Embodiment 1.

The detection method of the line scheduled to be divided according to Embodiment 1 is a detection method of detecting the line scheduled to be divided 5 using the detection device 90 of the line scheduled to be divided shown in FIG. 3. As shown in FIG. 5, It includes a maintenance step (ST1), an ultrasonic measurement step (ST2), and a detection step (ST3). The detection step ST3 includes an image processing step ST4. The method for detecting a line scheduled to be divided according to Embodiment 1 further includes an alignment step (ST5) and a cutting step (ST6).

The holding step ST1 is a step of holding the semiconductor device 1, which is a detection target, on the holding table 11. In the holding step ST1, in detail, first, the lower end of the holder 72 in the Z-axis direction is sufficiently spaced apart from the holding surface 12 of the holding table 11 on which the semiconductor device 1 to be detected is placed. In this state, the semiconductor device 1 to be detected is transported from the storage portion of the semiconductor device 1, not shown, using a transport device not shown, and placed on the holding surface 12 of the holding table 11. . In the holding step ST1, the vacuum suction source then performs a suction operation to suction and hold the semiconductor device 1, which is a detection target, on the holding surface 12 of the holding table 11. By carrying out the holding step ST1 in this way, the semiconductor device 1 to be detected is kept from moving in any of the X-axis direction, Y-axis direction, and Z-axis direction on the holding surface 12 of the holding table 11. maintain.

The ultrasonic waves emitted by the ultrasonic probe 71 have low propagation efficiency in air. For this reason, measurement of the reflected echo cannot be performed when air exists between the lower tip of the ultrasonic probe 71 in the Z-axis direction and the semiconductor device 1 that is the detection target. Therefore, when measuring the reflected echo, as shown in FIG. 4, the area between the lower tip of the ultrasonic probe 71 in the Z-axis direction and the semiconductor device 1 to be detected is filled with water 79. There is a need to form

For this reason, in the method of detecting the line scheduled to be divided, the cutting device 10 performs a water supply step, which is a step of bringing the reflected echo into a state in which the reflected echo can be measured, before performing the ultrasonic measurement step ST2. In the water supply step, in detail, first, the control unit 100 controls the Z-axis movement unit 50 to move the ultrasonic probe 71 downward in the Z-axis direction, thereby moving the ultrasonic probe 71 downward in the Z-axis direction of the holder 72. As shown in FIG. 4, the end portion is brought close to the surface above the Z-axis direction of the semiconductor device 1 to be detected by a predetermined distance d. Here, the predetermined distance d is the position in the Z-axis direction of the ultrasonic probe 71 where the focus of the ultrasonic waves emitted by the ultrasonic probe 71 is set on or near the interface between the resin 4 and the device chip 3. It is a parameter representing , and specifically, it is about several millimeters.

In the water supply step, the control unit 100 then controls the water supply operation of the water supply unit 80, so that the water supply unit 80 flows into the space 78 and the space 78 via the water supply path 73. ) Water 79 is supplied to the space below the Z-axis direction. In this way, by executing the water supply step, as shown in FIG. 4, the area between the lower tip portion in the Z-axis direction of the ultrasonic probe 71 and the semiconductor device 1 to be detected is filled with water 79. can be formed, making it possible to measure the reflected echo.

Until the subsequent ultrasonic measurement step (ST2) is completed, the control unit 100 controls the water supply operation of the water supply unit 80. Until the subsequent ultrasonic measurement step (ST2) is completed, the water supply unit 80 supplies water ( 79) is continuously supplied to maintain a state in which the reflected echo can be measured.

In the water supply step, the ultrasonic probe 71 is positioned at a position where the lower end of the holder 72 is brought close to the upper surface of the semiconductor device 1 by a predetermined distance d. Specifically, the predetermined distance d is the Z-axis direction where the ultrasonic probe 71 transmits and receives ultrasonic waves in the water supply stage and the intensity of the reflected echo from the interface between the resin 4 and the device chip 3 is maximized. It is desirable to be in the position of .

The device chip 3 is disposed near the center of the semiconductor device 1 to be detected in the Z-axis direction because the semiconductor device 1 to be detected constitutes the package device 7 of the FOWLP described above. For this reason, the position of the boundary surface between the resin 4 and the device chip 3 in the Z-axis direction can be approximately calculated when the thickness of the device chip 3 in the Z-axis direction is known. Therefore, when the thickness of the device chip 3 in the Z-axis direction is known, the above-mentioned predetermined distance d can be calculated from the distance between the preset ultrasonic probe 71 and the focus of the ultrasonic wave. For this reason, in the course of the water supply step, the cutting device 10 brings the lower end of the holder 72 closer to the upper surface of the semiconductor device 1 to a predetermined distance d, so that the ultrasonic probe 71 The ultrasonic probe 71 can be moved to a position where the focus of the irradiated ultrasonic waves is set on or near the interface between the resin 4 and the device chip 3. By doing this, the cutting device 10 can reliably detect reflected waves from the interface between the resin 4 and the device chip 3 of the semiconductor device 1 and measure them with high precision.

In the ultrasonic measurement step (ST2), the semiconductor device 1, which is the detection target, held on the holding table 11, and the ultrasonic probe 71, which functions as an ultrasonic irradiation means, are relatively moved in the horizontal direction at predetermined intervals, This is a step of measuring reflected echoes 150-1, 150-2, and 150-3 shown in FIGS. 7 and 8 by irradiating ultrasonic waves to a predetermined thickness portion of the device 1. Here, the predetermined thickness portion represents the boundary surface and vicinity of the boundary surface between the resin 4 of the semiconductor device 1 and the device chip 3. In addition, irradiating ultrasonic waves to a predetermined thickness portion of the semiconductor device 1 means that the focus of the ultrasonic waves irradiated by the ultrasonic probe 71 is set on or near the interface between the resin 4 and the device chip 3. It indicates that In Embodiment 1, in the process of executing the water supply step before executing the ultrasonic measurement step (ST2), the position of the ultrasonic probe 71 in the Z-axis direction is such that ultrasonic waves can be irradiated to this predetermined thickness portion. It is adjusted to a position defined by a predetermined distance d.

FIG. 6 is an explanatory diagram explaining the ultrasonic measurement step (ST2) of FIG. 5. FIG. 7 is an explanatory diagram showing an example of a reflected echo measured in the ultrasonic measurement step (ST2) of FIG. 5. FIG. 8 is an explanatory diagram showing another example of a reflected echo measured in the ultrasonic measurement step (ST2) of FIG. 5. Furthermore, in FIG. 6, the ultrasonic probe 71 and the semiconductor device 1 as a detection target are shown, and the illustration of other components of the detection device 90 of the line scheduled to be divided is omitted.

Hereinafter, in this specification, in the ultrasonic measurement step (ST2), as shown in FIG. 6, the cutting device 10 moves the ultrasonic probe 71 to a position 71-1 on the division line 5, The case of moving relative to the semiconductor device 1 in this order to the position 71-2 on the device chip 3 and the position 71-3 on the separate division line 5 is shown in FIG. 6. In addition, the description will be made using FIGS. 7 and 8.

In addition, the reflected echo 150-1 shown in FIG. 7 is generated when the ultrasonic probe 71 located at the position 71-1 shown in FIG. 6 irradiates the ultrasonic wave 140-1. It is acquired by the ultrasonic receiver 112 of (110). The reflected echo 150-3 shown in FIG. 7 is generated by the ultrasonic measurement unit 110 when the ultrasonic probe 71 located at the position 71-3 shown in FIG. 6 irradiates the ultrasonic wave 140-3. ) is acquired by the ultrasonic receiver 112. The reflected echoes 150-1 and 150-3 have similar waveforms.

As shown in FIG. 7, the reflection echoes 150-1 and 150-3 are the voltage signal 151 of the surface wave, which is a reflected wave reflected from the surface of the resin 4 of the semiconductor device 1 to be detected, and the detection target. It has a voltage signal 152 of a back surface wave, which is a reflected wave reflected from the back surface of the target semiconductor device 1, that is, the interface between the back surface of the redistribution layer 8 and the water 79. Since the reflected echoes 150-1 and 150-3 are all acquired at the positions 71-1 and 71-3 on the division line 5, they are obtained at the interface between the resin 4 and the device chip 3. There is no voltage signal from the reflected wave.

In addition, the reflected echo 150-2 shown in FIG. 8 is generated when the ultrasonic probe 71 located at the position 71-2 shown in FIG. 6 irradiates the ultrasonic wave 140-2. It is acquired by the ultrasonic receiver 112 of (110).

As shown in FIG. 8, the reflected echo 150-2 is in addition to the surface wave voltage signal 151 and the back wave voltage signal 152 that the reflected echoes 150-1 and 150-3 have. , has a voltage signal 153 of the interface wave, which is a reflected wave reflected from the interface between the resin 4 and the device chip 3. Since the reflected echo 150-2 is acquired at the position 71-2 on the device chip 3, it has the voltage signal 153 of the interface wave in this way.

In the ultrasonic measurement step (ST2), as described above, the ultrasonic pulser 111 and the ultrasonic receiver 112 of the ultrasonic measurement unit 110 perform ultrasonic measurement using the ultrasonic probe 71, thereby ), the reflected echo 150-2 having the voltage signal 153 of the interface wave is acquired at the position 71-2, and the interface wave is acquired at the positions 71-1 and 71-3 on the division line 5. Reflected echoes 150-1 and 150-3 that do not have the voltage signal 153 are acquired.

In the ultrasonic measurement step (ST2), the control unit 100 controls the X-axis movement unit 30 and the Y-axis movement unit 40, so that each measurement point is arranged in the By scanning and moving the ultrasonic probe 71 along , reflected echoes 150-1, 150-2, and 150-3 are acquired at all measurement points. In addition, in the ultrasonic measurement step (ST2) in Embodiment 1, all reflected echoes ( The control unit 100 temporarily stores numbers 150-1, 150-2, and 150-3. That is, in Embodiment 1, the control unit 100 temporarily stores the same number of reflection echoes 150-1, 150-2, and 150-3 as the measurement points.

The detection step (ST3) is performed after the ultrasonic measurement step (ST2) and is a step of detecting the division line 5 from the distribution of the reflected echo. In the detection step (ST3), in detail, first, the ultrasonic detector 113 of the ultrasonic measurement unit 110 detects the reflected echoes 150-1, 150-2, 150-3), the intensity of the voltage signal within the gate set to a predetermined range including the time at which the voltage signal 153 of the interface wave is detected is measured. In the detection step (ST3), the voltage signal measured by the ultrasonic detector 113 of the ultrasonic measurement unit 110 becomes a positive value clearly greater than 0 at the position 71-2 on the device chip 3, The value becomes 0 or around 0 at the positions (71-1, 71-3) on the division line 5. In the detection step (ST3), intensity information of the voltage signal 153 of the interface wave within the gate is acquired as measurement data.

In the detection step (ST3), the control unit 100 determines all measurement points based on the intensity information of the voltage signal 153 of the interface wave acquired as measurement data by the ultrasonic detector 113 of the ultrasonic measurement unit 110, It is classified into measurement points where the intensity of the voltage signal 153 of the interface wave is greater than a predetermined threshold, and measurement points where the intensity of the voltage signal 153 of the interface wave is less than a predetermined threshold. In the detection step ST3, the control unit 100 accordingly selects all measurement points, measurement points where information on the intensity of the voltage signal 153 of the interface wave is a positive value clearly greater than 0, and the interface wave Information on the intensity of the voltage signal 153 can be classified as a measurement point with a value of 0 or around 0.

In the detection step ST3, the control unit 100 determines that a measurement point at which the intensity of the voltage signal 153 of the interface wave is equal to or greater than a predetermined threshold is a measurement point on the device chip 3, and determines that the voltage signal 153 of the interface wave is a measurement point on the device chip 3. A measurement point where the intensity of the signal 153 is less than a predetermined threshold is determined to be a measurement point that is not on the device chip 3. In the detection step ST3, further later, the control unit 100 selects the measurement points excluding the measurement points that are not on the outer surplus area 6 among the measurement points that are not on the device chip 3 on the division line 5. It is determined to be a measurement point. In the detection step (ST3), the division line 5 is selected from the distribution of the voltage signals 151, 152, and 153 of each wave of the reflected echoes 150-1, 150-2, and 150-3. It can be detected.

The detection step (ST3) preferably includes an image processing step (ST4). In this case, the image processing step (ST4) converts the distribution of the voltage signals 151, 152, and 153 of each wave of the reflection echoes 150-1, 150-2, and 150-3 into image data with color information. This is the conversion stage. Also, in this case, the detection step ST3 is a step of detecting the division line 5 according to the color information of the image data obtained by conversion in the image processing step ST4.

When the detection step ST3 includes an image processing step ST4, in the image processing step ST4, in detail, the control unit 100 detects the interface acquired by the ultrasonic detector 113 of the ultrasonic measurement unit 110. Regarding the intensity information of the voltage signal 153 of the interfacial wave, the pixel containing the measurement point where the intensity of the voltage signal 153 of the interfacial wave is more than a predetermined threshold is set as the first color, and the intensity of the voltage signal 153 of the interfacial wave is set to the first color. A pixel containing a measurement point that is less than a predetermined threshold is set as the second color, and an image containing the first color and the second color is created. In the image processing step ST4, the control unit 100 accordingly selects a pixel containing a measurement point for which the intensity information of the voltage signal 153 of the interface wave is a positive value clearly greater than 0 in the first color. , an image can be created in which pixels including measurement points where the intensity information of the voltage signal 153 of the interface wave has a value of 0 or near 0 are used as the second color.

FIG. 9 is an explanatory diagram showing an example of image data obtained in the image processing step (ST4) in FIG. 5. Image data 155 shown in FIG. 9 is obtained by performing an image processing step (ST4) on the semiconductor device 1 as a detection target, and includes a first color pixel area 157 and a second color pixel area ( 158).

The first color pixel area 157 in the image data 155 corresponds to the area where the device chips 3 are arranged, as shown in FIG. 9 . As shown in FIG. 9, the second color pixel area 158 in the image data 155 is an area where the device chips 3 are not arranged, that is, the division line 5 and the outer surplus area. It corresponds to (6).

When the detection step ST3 includes an image processing step ST4, in the detection step ST3, the control unit 100 first selects a first color in the image data obtained by conversion in the image processing step ST4. The pixel area 157 of is determined to be an area where the device chips 3 are arranged, and the pixel area 158 of the second color is determined to be an area where the device chips 3 are not arranged. When the detection step ST3 includes an image processing step ST4, in the detection step ST3, the control unit 100 then determines that among the areas in which the device chips 3 are not arranged, The area excluding the outer surplus area 6 is determined to be the division line 5. In the detection step (ST3), the division line 5 is detected from the distribution of the voltage signals 151, 152, and 153 of each wave of the reflected echoes 150-1, 150-2, and 150-3. You can.

Additionally, the control unit 100 transmits the image data created in the image processing step (ST4) and the information on the division scheduled line (5) detected in the detection step (ST3) to the display unit 130 for display. good night. In this case, it is possible to confirm at a glance that the division line 5 is being detected.

The alignment step ST5 is executed after the detection step ST3, and the control unit 100 provides information on the line to be divided 5 detected in the detection step ST3 (e.g., the width of the line to be divided 5). This is the step of performing the above-described alignment using the center position of the direction. In the alignment step (ST5), specifically, the control unit 100 performs positional alignment between the dividing line 5 detected in the detection step (ST3) and the cutting blade 21 of the cutting unit 20. Executes processing such as pattern matching. In this way, the alignment step ST5 is performed using the position information of the division line 5 detected in the detection step ST3 and corresponding to the portion to be cut with the cutting blade 21, so the alignment step ( The precision of the cutting position by the cutting blade 21 in the cutting step (ST6) performed after ST5) can be improved.

The cutting step (ST6) is performed after the alignment step (ST5) and is a step in which the semiconductor device 1 is cut along the division line 5 with the cutting blade 21. In the cutting step ST6, specifically, the control unit 100 cuts the semiconductor device 1 along the dividing line 5 with the cutting blade 21 based on the result of the alignment step ST5. Cut and process.

As described above, according to the detection method of the division line according to Embodiment 1, detection is performed while relatively moving the semiconductor device 1, which is a detection object, and the ultrasonic probe 71 functioning as an ultrasonic irradiation means in the horizontal direction at predetermined intervals. Ultrasonic waves are irradiated to a predetermined thickness portion of the target semiconductor device 1, the reflected echoes (150-1, 150-2, 150-3) are measured, and the reflected echoes (150-1, 150-2, 150-3) are measured. The division line 5 is detected from the distribution of the voltage signals 151, 152, and 153 of each wave in 3). For this reason, in the method for detecting the scheduled division line according to Embodiment 1, there is no need to perform processing such as cutting to detect the scheduled division line 5, so that cutting chips resulting from processing do not appear on the device chip 3. The possibility of it sticking can be reduced.

In addition, the method for detecting a line scheduled to be divided according to Embodiment 1 converts the voltage signal 153 of the interface wave of the reflection echoes 150-1, 150-2, and 150-3 into image data 155 having color information. , and the division line 5 is detected according to the color information of this image data 155. For this reason, it is possible to confirm at a glance how the division scheduled line 5 is detected.

[Embodiment 2]

A method for detecting a line scheduled to be divided according to Embodiment 2 of the present invention will be explained based on the drawings. The method of detecting a line scheduled to be divided according to Embodiment 2 is, similarly to the method of detecting a line scheduled to be divided according to Embodiment 1, an operation of the device 90 for detecting a line scheduled to be divided. In the description of the method for detecting a line scheduled to be divided according to Embodiment 2, the same parts as those in Embodiment 1 are given the same reference numerals and the description is omitted.

Fig. 10 is a flowchart of a method for detecting a line scheduled to be divided according to Embodiment 2. As shown in Fig. 10, the method for detecting a line scheduled to be divided according to Embodiment 2 includes a holding step (ST1), an ultrasonic measurement step (ST2), and a detection method provided by the method for detecting a line scheduled to be divided according to Embodiment 1. In addition to the step (ST3), the alignment step (ST5), and the cutting step (ST6), before the ultrasonic measurement step (ST2) and the detection step (ST3), an additional preparatory ultrasonic measurement step (ST7) and a preparatory detection step (ST8) are performed. ) and an interface wave detection determination step (ST10). The preparation detection step (ST8) includes a preparation image processing step (ST9).

In the water supply step, the ultrasonic probe 71 moves the ultrasonic wave to a position where the focus is set near the center of the semiconductor device 1 in the Z-axis direction. Alternatively, in the water supply step, when the ultrasonic probe 71 is moved to a position where the focus of the ultrasonic waves is set near the center of the Z-axis direction of the semiconductor device 1, the ultrasonic probe 71 moves to the lower side in the Z-axis direction. In the case where the tip portion comes into contact with the upper surface of the semiconductor device 1 that is the detection target in the Z-axis direction, the lower tip portion is moved to a position where it does not exactly contact the upper surface of the semiconductor device 1. By doing this, the ultrasonic probe 71 can be placed in a state where it can reliably detect a reflection echo from the interface between the resin 4 of the semiconductor device 1 and the device chip 3.

However, in this state in which the ultrasonic probe 71 is moved, for example, when the thickness of the device chip 3 is unknown, the There are cases where it is difficult to measure the interface wave, which is a reflected wave, with sufficient precision. Therefore, in the method for detecting a line scheduled to be divided according to Embodiment 2, even when the thickness of the device chip 3 in the Z-axis direction is unknown, the preparatory ultrasonic measurement step (ST7), the preparatory detection step (ST8) and the interface wave detection are performed. By performing the determination step (ST10) before the ultrasonic measurement step (ST2) and the detection step (ST3), the interface wave, which is a reflected wave from the interface between the resin 4 and the device chip 3 of the semiconductor device 1, is generated, It can be made in a state where it can be measured with sufficient precision.

The preparatory ultrasonic measurement step (ST7) is performed by relatively moving the semiconductor device 1, which is a detection target, and the ultrasonic probe 71, which functions as an ultrasonic irradiation means, in the Z-axis direction, which is the thickness direction of the semiconductor device 1, at predetermined intervals. This is a step of measuring the prepared reflection echoes 170-1 and 170-2 shown in FIGS. 12 and 13 by irradiating ultrasonic waves into the inside of the device 1. The preparatory ultrasonic measurement step (ST7) is performed after the water supply step is performed. Hereinafter, in this specification, in order to distinguish the reflected echo measured in the preparation ultrasonic measurement step (ST7) from the reflected echo (150-1, 150-2, 150-3) measured in the ultrasonic measurement step (ST2), These are called ready reflex echoes (170-1, 170-2).

FIG. 11 is an explanatory diagram illustrating the preparatory ultrasonic measurement step (ST7) of FIG. 10. FIG. 12 is an explanatory diagram showing an example of a preparatory reflection echo measured in the preparatory ultrasonic measurement step (ST7) of FIG. 10. FIG. 13 is an explanatory diagram showing another example of a preparatory reflection echo measured in the preparatory ultrasonic measurement step (ST7) of FIG. 10. 11 illustrates the ultrasonic probe 71 and the semiconductor device 1 as a detection target, and omits illustration of other components of the detection device 90 for the line to be divided.

In the preparation ultrasonic measurement step (ST7), specifically, the control unit 100 controls the X-axis movement unit 30 and the Y-axis movement unit 40 to move the ultrasonic probe 71 in the By moving in the axial direction, the semiconductor device 1 to be detected is moved upward in the Z-axis direction, as shown in FIG. 11 .

In the preparatory ultrasonic measurement step (ST7), the control unit 100 controls the Z-axis movement unit 50 to move the ultrasonic probe 71 at a predetermined distance from the lower limit position in the Z-axis direction, for example, several dozen. By moving the device upward in the Z-axis direction in increments of ㎛ to the upper limit position in the Z-axis direction, ultrasonic waves are irradiated while moving in the Z-axis direction at predetermined intervals, and reflected waves are acquired. That is, in the preparatory ultrasonic measurement step (ST7), the ultrasonic probe 71 is brought closest to the semiconductor device 1, which is the detection target, and then gradually moves in a direction away from it to irradiate ultrasonic waves and acquire reflected waves. Here, the lower limit position in the Z-axis direction of the ultrasonic probe 71 is the position of the ultrasonic probe 71 moved during the water supply step. In addition, the upper limit position in the Z-axis direction of the ultrasonic probe 71 is the reflection reflected from the surface of the resin 4 of the semiconductor device 1 that is the detection target when the ultrasonic probe 71 is moved upward in the Z-axis direction. This is the position of the ultrasonic probe 71 when the intensity of the voltage signal 171 of the echoed surface wave (see FIGS. 12 and 13) switches from increasing to decreasing. In addition, in Embodiment 1, in the preparatory ultrasonic measurement step (ST7), a form is exemplified in which the ultrasonic probe 71 is moved upward in the Z-axis direction from the lower limit position in the Z-axis direction to the upper limit position in the Z-axis direction. The invention is not limited to this, and the ultrasonic probe 71 may be moved downward in the Z-axis direction from the upper limit position in the Z-axis direction to the lower limit position in the Z-axis direction.

In the preparatory ultrasonic measurement step (ST7), ultrasonic waves are radiated while moving the ultrasonic probe 71 upward in the Z-axis direction, so that the focus of the ultrasonic waves irradiated by the ultrasonic probe 71 moves upward in the Z-axis direction. In the preparation ultrasonic measurement step (ST7), the ultrasonic measurement unit 110 measures ultrasonic waves 140 by the ultrasonic probe 71 in each state in which the ultrasonic probe 71 is moved at a predetermined interval in the Z-axis direction. By irradiation, the prepared reflection echoes 170-1 and 170-2 shown in FIGS. 12 and 13 are detected and acquired.

Hereinafter, in this specification, in the preparatory ultrasonic measurement step (ST7), as shown in FIG. 11, the focus of the ultrasonic waves 140 irradiated by the ultrasonic probe 71 is the device chip 3. A position set at the point 160-1 inside the resin 4 above the Z-axis direction, and a position where the focus of the ultrasonic wave 140 is set at the point 160-2 inside the device chip 3. In addition to FIG. 11, FIG. 12 shows a case in which the prepared reflection echoes 170-1 and 170-2 are acquired by moving relative to the semiconductor device 1 as a detection target along a straight line along the Z-axis direction including . and FIG. 13.

In the prepared reflection echo 170-1 shown in FIG. 12, as shown in FIG. 11, the focus of the ultrasonic wave 140 irradiated by the ultrasonic probe 71 is set at the point 160-1, and the ultrasonic wave ( When detected by irradiating 140, it is acquired by the ultrasonic receiver 112 of the ultrasonic measurement unit 110.

As shown in FIG. 12, the ready reflection echo 170-1 is a voltage signal 171 of a surface wave, which is a reflected wave reflected from the surface of the resin 4 of the semiconductor device 1 to be detected, and the semiconductor device to be detected. It has a voltage signal 172 of a back surface wave, which is a reflected wave reflected from the back surface of (1), that is, the interface between the back surface of the redistribution layer 8 and the water 79. In the prepared reflection echo 170-1, the focus of the irradiated ultrasonic wave 140 is set at the point 160-1 on the resin 4 side rather than the interface between the resin 4 and the device chip 3. There is no voltage signal of the reflected wave reflected from the interface between the resin 4 and the device chip 3. In addition, since the voltage signal of the wave reflected by the contact interface is generally stronger than the voltage signal of the wave reflected by the bonding interface, depending on the location of the focus of the ultrasonic wave 140 in the Z-axis direction, the resin 4 Although the voltage signal of the reflected wave reflected from the interface of the device chip 3 is not detected, the back surface of the back surface of the water 79 and the back surface of the redistribution layer 8 further below the interface in the Z-axis direction is a reflected wave. A phenomenon in which the wave voltage signal 172 is detected may occur.

In the prepared reflection echo 170-2 shown in FIG. 13, as shown in FIG. 11, the focus of the ultrasonic wave 140 irradiated by the ultrasonic probe 71 is set at the point 160-2, and the ultrasonic wave ( When detected by irradiating 140, it is acquired by the ultrasonic receiver 112 of the ultrasonic measurement unit 110.

As shown in FIG. 13, the prepared reflection echo 170-2 has, in addition to the voltage signal 171 of the surface wave and the voltage signal 172 of the back wave, which are the same as those of the prepared reflection echo 170-1, It has a voltage signal 173 of the interface wave, which is a reflected wave reflected from the interface between (4) and the device chip 3. In the prepared reflection echo 170-2, the focus of the irradiated ultrasonic waves 140 is set at the point 160-2 slightly on the device chip 3 side rather than the interface between the resin 4 and the device chip 3. Therefore, since the focus of the irradiated ultrasonic wave 140 is closer to the interface between the resin 4 and the device chip 3 than the point 160-1, the voltage signal 173 of the interface wave is present.

In the preparation ultrasonic measurement step (ST7), as described above, the ultrasonic receiver 112 of the ultrasonic measurement unit 110 performs ultrasonic measurement using the ultrasonic probe 71, so that the ultrasonic waves irradiated by the ultrasonic probe 71 ( When the focus of 140) is set at the point 160-1, the prepared reflection echo 170-1 without the voltage signal 173 of the interface wave is acquired, and the ultrasonic wave irradiated by the ultrasonic probe 71 ( When the focus of 140 is set at point 160-2, a prepared reflection echo 170-2 having a voltage signal 173 of the interface wave is acquired.

In the preparation ultrasonic measurement step (ST7), the control unit 100 controls the Z-axis movement unit 50 to scan and move the ultrasonic probe 71 along each position arranged in the Z-axis direction at predetermined intervals. , acquire prepared reflection echoes (170-1, 170-2) at all measurement points. In addition, in the preparatory ultrasonic measurement step (ST7) of the method for detecting a scheduled division line according to Embodiment 2, ultrasonic waves are applied between at least two points sandwiching the interface between the resin 4 and the device chip 3 in the Z-axis direction. Preparatory reflection echoes 170-1 and 170-2 are measured while moving the ultrasonic probe 71 in the Z-axis direction so that the focus moves. In addition, in Embodiment 2, in the preparatory ultrasonic measurement step (ST7), all preparatory data obtained while relatively moving the semiconductor device 1 and the ultrasonic probe 71 held on the holding table 11 in the thickness direction at predetermined intervals The control unit 100 temporarily stores the reflected echoes 170-1 and 170-2. That is, in Embodiment 2, the control unit 100 temporarily stores the same number of prepared reflection echoes 170-1 and 170-2 as the measurement points.

The preparation detection step (ST8) is an ultrasonic measurement step ( In ST2), this is the step of determining the location in the thickness direction where ultrasonic waves are irradiated.

In the preparation detection step (ST8), in detail, first, the ultrasonic detector 113 of the ultrasonic measurement unit 110 detects the preparation reflection echoes 170-1 and 170- acquired by the ultrasonic receiver 112 of the ultrasonic measurement unit 110. For 2), the intensity of the voltage signal 173 of the interface wave within the gate set to a predetermined range including the time at which the voltage signal 173 of the interface wave is detected is measured. In the preparation detection step (ST8), intensity information of the voltage signal 173 of the interface wave within the gate is acquired as measurement data.

In the preparation detection step (ST8), the ultrasonic measurement unit 110 determines the intensity of the voltage signal 173 of the interface wave of each preparation reflection echo (170-1, 170-2) measured by the ultrasonic detector 113. Prepared reflection echoes 170-1 and 170-2 having the voltage signal 173 of the interface wave with high intensity are extracted. In the preparation detection step (ST8), the ultrasonic probe ( 71) Calculate the position in the Z-axis direction. The position of the ultrasonic probe 71 in the Z-axis direction calculated here by the ultrasonic measurement unit 110 is the focus of the ultrasonic waves 140 radiated by the ultrasonic probe 71 between the resin 4 and the device chip 3. The location is set on or near the boundary. In the preparation detection step (ST8), the ultrasonic measurement unit 110 then matches the calculated position of the ultrasonic probe 71 in the Z-axis direction to the ultrasonic probe 71 that radiates ultrasonic waves in the ultrasonic measurement step (ST2). ) is determined by the location.

The Z-axis position of the tip of the ultrasonic probe 71 where the voltage signal 173 of the surface wave is maximized is the Z-axis of the tip of the ultrasonic probe 71 where the voltage signal 171 of the surface wave is maximized. It is located lower in the Z-axis direction than the directional position. In addition, the position in the Z-axis direction of the tip of the ultrasonic probe 71 where the voltage signal 173 of the interface wave is maximized is the position where the tip of the ultrasonic probe 71 is closer to the lower limit in the Z-axis direction. It is toward the top of the Z-axis direction. For this reason, in the preparation detection step ST8, the voltage signal 173 of the interface wave is maximized within the range of the Z-axis direction in which the tip portion of the ultrasonic probe 71 is moved in the preparation ultrasonic measurement step ST7. The ultrasonic measurement step is to calculate the Z-axis position of the tip of the ultrasonic probe 71 and determine the Z-axis position of the tip of the ultrasonic probe 71 where the calculated voltage signal 173 of the interface wave is maximized. In (ST2), the position of the ultrasonic probe 71 that irradiates ultrasonic waves is determined.

Preferably, the preparation detection step (ST8) includes a preparation image processing step (ST9). In this case, the preparation image processing step ST9 converts the distribution of the voltage signals 171, 172, and 173 of each wave of the preparation reflection echoes 170-1 and 170-2 into preparation image data having color information. This is the step. Also, in this case, the preparation detection step (ST8) is an ultrasonic probe that irradiates ultrasonic waves in the ultrasonic measurement step (ST2) according to the distribution of the color information of the preparation image data in the thickness direction of the semiconductor device 1 as a detection target. 71) This is the step to determine the location.

When the preparation detection step (ST8) includes a preparation image processing step (ST9), in the preparation image processing step (ST9), in detail, the ultrasonic measurement unit 110 detects the ultrasonic detector 113 of the ultrasonic measurement unit 110. ) Regarding the intensity information of the voltage signals 171, 172, and 173 of each wave acquired, the semiconductor device (1) when the intensity of the voltage signals 171, 172, and 173 of each wave satisfies each predetermined condition. A one-dimensional image containing a plurality of colors is created with each pixel at a position in the Z-axis direction, which is the thickness direction, as each predetermined color.

FIG. 14 is an explanatory diagram showing an example of preparation image data obtained in the preparation image processing step (ST9) in FIG. 10. Preparation image data 180 shown in FIG. 14 is obtained by executing the preparation image processing step (ST9) with respect to the semiconductor device 1 as the detection target, and moves from top to bottom in the Z-axis direction, pixel areas of each color. It has (181, 182, 183, 184, 185).

The pixel area 181 is an area in which parallel diagonal lines on the right with narrow spacing are given in FIG. 14 and is colored in the first color. The pixel area 181 corresponds to an area in which the voltage signal 171 of the surface wave is detected above a predetermined threshold, and the position in the Z-axis direction of the focus of the irradiated ultrasonic wave 140 is the semiconductor device 1 to be detected. ) corresponds to the area near the surface of the resin 4, that is, near the interface between the surface of the resin 4 and the water 79.

The pixel area 182 is an area in which parallel diagonal lines on the right with wide intervals are given in FIG. 14 and colored in the second color. The pixel area 182 is a voltage signal ( Any of 171, 172, 173) corresponds to a region detected below a predetermined threshold, and the position in the Z-axis direction of the focus of the ultrasonic waves 140 to be irradiated is the resin 4 of the semiconductor device 1 to be detected. It corresponds to the area inside the part above the device chip 3 in . That is, the length of the pixel area 182 in the Z-axis direction, the time interval between the surface wave voltage signal 171 and the interface wave voltage signal 173, and the device in the resin 4 of the semiconductor device 1 The thickness of the portion above the chip 3 corresponds to each other.

In FIG. 14 , the pixel area 183 is an area in which a parallel diagonal line on the right downhill and a parallel diagonal line on the right with narrow intervals intersect, and is colored in the third color. The pixel area 183 corresponds to an area in which the voltage signal 173 of the interface wave is detected above a predetermined threshold, and the position in the Z-axis direction of the focus of the irradiating ultrasonic wave 140 is the semiconductor device to be detected ( It corresponds to the area near the interface between the resin 4 and the device chip 3 in 1).

The pixel area 184 is an area in which parallel diagonal lines on the right with wide intervals in FIG. 14 are given and colored in the fourth color. The pixel area 182 is the voltage signal of each wave between the area where the voltage signal 173 of the interfacial wave is detected above a predetermined threshold and the area where the voltage signal 172 of the back surface wave is detected above a predetermined threshold. Any of (171, 172, 173) corresponds to a region detected below a predetermined threshold, and the position in the Z-axis direction of the focus of the ultrasonic waves 140 to be irradiated is the device chip ( 3) and the area inside the redistribution layer 8. That is, the length of the pixel area 184 in the Z-axis direction, the time interval between the voltage signal 173 of the interface wave and the voltage signal 172 of the back surface wave, and the device chip 3 and material of the semiconductor device 1 The total thickness of the wiring layer 8 corresponds to each other.

In addition, in this embodiment, since the ultrasonic probe 71 is scanned in the vicinity of the area where the voltage signal 173 of the interface wave is detected as a value clearly larger than the predetermined threshold, the device chip 3 and the redistribution layer 8 ) is said to be highly likely not to be detected, but the present invention is not limited to this, and the voltage signal resulting from the interface between the device chip 3 and the redistribution layer 8 is detected, and the Prepared image data in which the area corresponding to the chip 3, the area corresponding to the interface between the device chip 3 and the redistribution layer 8, and the area corresponding to the redistribution layer 8 are colored in different colors are obtained. It's okay if you can.

The pixel area 185 is an area in which parallel diagonal lines on the right with narrow spacing are given in FIG. 14 and colored in the fifth color. The pixel area 185 corresponds to the area in which the back-wave voltage signal 172 is detected above a predetermined threshold, and the position of the Z-axis direction of the focus of the irradiated ultrasonic wave 140 is the semiconductor device to be detected ( It corresponds to the vicinity of the back surface of the redistribution layer 8 in 1), that is, the area that is the interface between the back surface of the redistribution layer 8 and the water 79.

In addition, the pixel areas 182 and 184 are areas in which any of the voltage signals 171, 172, and 173 of each wave are detected below a predetermined threshold, but the voltage signals of each wave detected below this predetermined threshold From information such as the intensity ratio of (171, 172, and 173), the control unit 100 can detect these areas separately and perform image processing to give each individual color.

If the preparation detection step ST8 includes a preparation image processing step ST9, and the preparation image data 180 can be obtained in the preparation image processing step ST9, then in the preparation detection step ST8, the control unit 100 ) first calculates the position of the pixel area 183 in the Z-axis direction based on each pixel area of each color in the ready image data 180 obtained by conversion in the preparation image processing step ST9. In this case, in the preparation detection step ST8, the control unit 100 determines the position of the ultrasonic probe 71 at which the center of the Z-axis direction of the pixel area 183 becomes the focus of the irradiated ultrasonic waves 140. is determined as the position at which the ultrasonic probe 71 irradiates ultrasonic waves in the ultrasonic measurement step (ST2), that is, the position of the ultrasonic probe 71 in the Z-axis direction. In the preparation detection step (ST8), the optimal position of the ultrasonic probe 71 in the Z-axis direction can be detected and set in the ultrasonic measurement step (ST2).

FIG. 15 is an explanatory diagram showing another example of preparation image data obtained in the preparation image processing step (ST9) in FIG. 10. The preparation image data 190 shown in FIG. 15, like the preparation image data 180 shown in FIG. 14 described above, is obtained by executing the preparation image processing step (ST9) with respect to the semiconductor device 1 that is the detection target. , it has pixel areas 192 and 194 of each color from top to bottom in the Z-axis direction. The preparation image data 190 is a modified form of the preparation image data 180 described above that does not have the pixel areas 181, 183, and 185. Here, not having the pixel areas 181, 183, and 185 means that the thickness of the pixel areas 181, 183, and 185 in the Z-axis direction has become thinner than the minimum area that can create an image of the ultrasonic measurement unit 110. Therefore, it also includes forms that do not actually appear in the image.

The pixel area 192 in the preparation image data 190 corresponds to the pixel area 182 in the preparation image data 180, and the pixel area 192 in the preparation image data 190 is , corresponds to the pixel area 182 in the preparation image data 180. In addition, the upper end of the pixel area 192 in the preparation image data 190 substantially corresponds to the pixel area 181 in the preparation image data 180, and the upper end of the pixel area 192 in the preparation image data 190 The boundary line between the pixel area 192 and the pixel area 194 substantially corresponds to the pixel area 183 in the ready image data 180, and the pixel area 194 in the ready image data 190 The lower part of substantially corresponds to the pixel area 185 in the preparation image data 180.

If the preparation detection step (ST8) includes the preparation image processing step (ST9), and the preparation image data 190 can be obtained in the preparation image processing step (ST9), the preparation image data 190 includes the preparation image data 180. Since there is no area corresponding to the pixel area 183 in ), in the preparation detection step ST8, the control unit 100 first selects each pixel area of each color in this preparation image data 190. Based on this, the position in the Z-axis direction at the boundary between the pixel area 192 and the pixel area 194 is calculated. In this case, in the preparation detection step ST8, the control unit 100 determines that the position in the Z-axis direction at the boundary between the pixel areas 192 and 194 becomes the focus of the ultrasonic waves 140 to be irradiated. The position of the ultrasonic probe 71 is determined as the position at which the ultrasonic probe 71 irradiates ultrasonic waves in the ultrasonic measurement step (ST2), that is, the position of the ultrasonic probe 71 in the Z-axis direction. In the preparation detection step (ST8), the optimal position of the ultrasonic probe 71 in the Z-axis direction can be detected and set in the ultrasonic measurement step (ST2).

In the interface wave detection determination step (ST10), ultrasonic measurement is performed by moving the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step (ST8), so that the voltage signal 173 of the interface wave has sufficient intensity. This is the step to determine whether it has been detected. In the interface wave detection and determination step (ST10), specifically, the control unit 100 moves the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step (ST8) to perform ultrasonic measurement, thereby When the voltage signal 173 is detected with an intensity greater than a predetermined threshold, it is determined that the voltage signal 173 of the interface wave is detected with sufficient intensity (interface wave detection determination step (ST10): Yes), and processing Proceed to the ultrasonic measurement step (ST2). Regarding the processing after the ultrasonic measurement step (ST2), since it is the same as Embodiment 1, detailed description thereof is omitted.

Meanwhile, the control unit 100 performs ultrasonic measurement by moving the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8, so that the voltage signal 173 of the interface wave is less than a predetermined threshold. If it is detected only at an intensity of After moving the predetermined distance, the process returns to the preparatory ultrasonic measurement step (ST7). In the interface wave detection determination step (ST10), the preparation ultrasonic measurement step (ST7) and the preparation detection step (ST8) are repeated until it is determined that the voltage signal 173 of the interface wave has been detected with sufficient intensity.

In addition, the control unit 100 displays the ready image data 180 created in the ready image processing step ST9 and the position information in the Z-axis direction of the ultrasonic probe 71 detected in the ready detection step ST8 to a display unit. You may send it to (130) and have it displayed. In this case, it is possible to confirm at a glance that the position of the ultrasonic probe 71 in the Z-axis direction is being detected, and the determination result of the interface wave detection determination step (ST10) can be confirmed at a glance.

As described above, according to the method for detecting a line scheduled to be divided according to Embodiment 2, before performing the ultrasonic measurement step (ST2), the semiconductor device 1 as a detection target and the ultrasonic probe 71 functioning as an ultrasonic irradiation means are While relatively moving the semiconductor device 1 in the thickness direction at predetermined intervals, ultrasonic waves 140 are irradiated to the inside of the semiconductor device 1 to be detected to measure prepared reflection echoes 170-1 and 170-2, From the distribution of the voltage signals 171, 172, and 173 of each wave of the prepared reflection echoes 170-1 and 170-2 in the thickness direction of the semiconductor device 1, the ultrasonic probe in the ultrasonic measurement step ST2 (71) determines the position to radiate ultrasound. For this reason, the method for detecting the division line according to Embodiment 2 can detect and set the optimal position of the ultrasonic probe 71 in the Z-axis direction in the ultrasonic measurement step (ST2).

Additionally, the method for detecting a line scheduled to be divided according to Embodiment 2 converts the prepared reflection echoes 170-1 and 170-2 into prepared image data 180 having color information, and this prepared image data 180 According to the color information, the position at which the ultrasonic probe 71 radiates ultrasonic waves is determined in the ultrasonic measurement step (ST2). For this reason, it is possible to see at a glance how the ultrasonic probe 71 determines the position to radiate ultrasonic waves in the ultrasonic measurement step (ST2).

[Embodiment 3]

FIG. 16 is a schematic configuration diagram showing an example of the configuration of a detection device 200 for a line to be divided used in the method for detecting a line to be divided according to Embodiment 3. A method for detecting a scheduled division line according to Embodiment 3 of the present invention will be explained based on the drawings. The method for detecting a line scheduled to be divided according to Embodiment 3 is the operation of the device 200 for detecting a line scheduled to be divided. In the description of the method for detecting a line scheduled to be divided according to Embodiment 3, the same parts as those of Embodiment 1 and Embodiment 2 are given the same reference numerals and the description is omitted.

As shown in FIG. 16, the detection device 200 of the line to be divided includes an ultrasonic inspection unit 70, a water supply unit 80, and a scanning device 230 that scans the ultrasonic inspection unit 70. , driving an ultrasonic measurement device 240 that performs ultrasonic measurement using the ultrasonic inspection unit 70, a control device 260 that controls each part of the detection device 200 of the line scheduled to be divided, and a scanning device 230. It is provided with a driving device 270 that performs image processing based on measurement data obtained from ultrasonic measurement, an image processing device 280 that performs image processing, and a display unit 130 that displays the processed image, etc.

The ultrasonic measurement device 240 includes an ultrasonic pulser 111 and an ultrasonic receiver 112, similar to the ultrasonic measurement unit 110 in the detection device 90 of the scheduled division line used in Embodiments 1 and 2. Since it has the ultrasonic detector 113 and performs the same function as the ultrasonic measurement unit 110 in the detection device 90 of the scheduled division line used in Embodiment 1 and Embodiment 2, a detailed description thereof is provided. Omit it. Since the image processing device 280 performs the same function as the image processing unit 120 in the detection device 90 of the scheduled division line used in Embodiments 1 and 2, its detailed description is omitted. . The ultrasonic measurement device 240, the control device 260, and the image processing device 280 are all the control unit 100 in the division line detection device 90 used in Embodiments 1 and 2. Since it is responsible for the same function, its detailed description is omitted.

The scanning device 230 and the driving device 270 are the holding table 11, the It performs the same functions as the axis movement unit 40 and the Z-axis movement unit 50. The scanning device 230 is a device that functions as an ultrasonic scanning means for scanning the ultrasonic probe 71 for ultrasonic measurement in the X-axis, Y-axis, and Z-axis directions, as shown in FIG. 16, and It is provided with a stage 234, a pair of supports 235, a 3-axis scanner 236, and a holding table 237.

The sample stage 234 is a stage for placing the semiconductor device 1 to be detected. As shown in FIG. 16, a pair of supports 235 are erected on the sample stage 234 and support the 3-axis scanner 236.

As shown in FIG. 16, the 3-axis scanner 236 includes an X-axis guide rail 236-1 installed parallel to the ) and a Z-axis direction guide rail (236-3) installed parallel to the Z-axis direction. The three-axis scanner 236 is installed and supported on a pair of struts 235 at both ends of the X-axis direction guide rail 236-1.

As shown in FIG. 16, the 3-axis scanner 236 has an upper end in the Z-axis direction of the ultrasonic probe 71 installed at the lower end in the Z-axis direction of the Z-axis direction guide rail 236-3. there is. The three-axis scanner 236 operates the ultrasonic probe 71 along the X-axis direction guide rail 236-1, Y-axis direction guide rail 236-2, and Z-axis direction guide rail 236-3. It is supported so that it can move in the X-axis, Y-axis, and Z-axis directions. The three-axis scanner 236 is electrically connected to the driving device 270, receives a supply of driving force from the driving device 270, and moves the ultrasonic probe 71 in the X-axis, Y-axis, and Z-axis directions. It can be moved to .

As shown in FIG. 16, the holding table 237 is installed above the sample stage 234 in the Z-axis direction. The holding table 237 is connected to a vacuum suction source (not shown), and is suctioned by the vacuum suction source to suction and hold the semiconductor device 1, which is a detection target, on the upper surface of the Z-axis direction. Additionally, around the holding table 237, a plurality of clamp parts, not shown, are provided, which are driven by air actuators, not shown, and clamp the outer peripheral surplus area 6 around the semiconductor device 1, which is a detection target. In Embodiment 3, the holding table 237 holds the semiconductor device 1, which is a detection target, so that each direction in which the plurality of device chips 3 are two-dimensionally arranged follows the X-axis direction and the Y-axis direction, respectively. .

The control device 260 controls the position of the ultrasonic probe 71 by controlling the driving device 270 . The control device 260 controls the scanning of the ultrasonic probe 71 in the X-axis direction and the Y-axis direction by controlling the drive device 270. The control device 260 controls the movement of the ultrasonic probe 71 in the Z-axis direction by controlling the driving device 270 .

The driving device 270 operates the motors of each axis built into the 3-axis scanner 236. The drive device 270 thereby scans and moves the ultrasonic probe 71 along the upper surface of the semiconductor device 1, which is the detection target, in the Z-axis direction.

Next, a method for detecting a line scheduled to be divided according to Embodiment 3 will be described. The method for detecting a line scheduled to be divided according to Embodiment 3 is the operation of the device 200 for detecting a line scheduled to be divided. Fig. 17 is a flowchart showing an example of a method for detecting a scheduled division line according to Embodiment 3. Fig. 18 is a flowchart showing another example of a method for detecting a division line scheduled according to Embodiment 3.

An example of the method for detecting a division line according to Embodiment 3 includes a holding step (ST1), an ultrasonic measurement step (ST2), and a detection step (ST3), as shown in FIG. 17. The detection step ST3 includes an image processing step ST4. The method of detecting a line scheduled to be divided according to Embodiment 3 is the method of detecting a line scheduled to be divided according to Embodiment 1, in which the alignment step (ST5) and the cutting step (ST6) are omitted.

Another example of the detection method of the division line according to Embodiment 3 is as shown in FIG. 18, in addition to the holding step (ST1), the ultrasonic measurement step (ST2), and the detection step (ST3), an ultrasonic measurement step (ST2) ) and before the detection step (ST3), a preparatory ultrasonic measurement step (ST7), a preparatory detection step (ST8), and an interface wave detection determination step (ST10) are additionally provided. The detection step ST3 includes an image processing step ST4. The preparation detection step (ST8) includes a preparation image processing step (ST9). The method of detecting a line scheduled to be divided according to Embodiment 3 is the method of detecting a line scheduled to be divided according to Embodiment 2, in which the alignment step (ST5) and the cutting step (ST6) are omitted.

As described above, according to the method for detecting a line scheduled to be divided according to Embodiment 3, the line scheduled to be divided according to Embodiments 1 and 2 is detected except for the parts related to the alignment step (ST5) and the cutting step (ST6). It has the same effect as the method.

In addition, since the method for detecting a scheduled division line according to Embodiment 3 uses the detection device 200 for a scheduled division line that does not include the cutting unit 20, it is necessary to cut the semiconductor device 1 that is the detection target. Even if there is no , it can be carried out easily and appropriately.

[Variation 1]

FIG. 19 is a surface diagram showing an example of a semiconductor device 301 subject to the method for detecting a scheduled division line according to Modification 1 of Embodiments 1 to 3. FIG. 20 is a cross-sectional view taken along line XX-XX of the semiconductor device 301 in FIG. 19. A method for detecting a line scheduled to be divided according to Modified Example 1 of Embodiments 1 to 3 of the present invention will be described based on the drawings. The method for detecting a line scheduled to be divided according to Modification 1 of Embodiments 1 to 3 of the present invention is a method for detecting a line scheduled to be divided according to each embodiment of Embodiments 1 to 3 of the present invention. The target of the detection method for the scheduled line has been changed from the semiconductor device 1 to the semiconductor device 301. In the description of the method for detecting a segmentation line according to Modification 1 of Embodiments 1 to 3, the same parts as those in Embodiments 1 to 3 are assigned the same reference numerals and the description is omitted.

As shown in FIGS. 19 and 20, the semiconductor device 301 has a package substrate type, that is, a rectangular plate shape, and includes a plurality of device chips 3, a resin 4, a dividing line 5, and an outer periphery. It has a surplus area 6, a solder bump 303, a package substrate 304, and a solder ball 305. The plurality of device chips 3, resin 4, division scheduled lines 5, and outer peripheral surplus areas 6 in the semiconductor device 301 are the same as those in the semiconductor device 1, so their detailed The explanation is omitted.

The semiconductor device 301 shown in FIGS. 19 and 20 includes, for example, device chips 3 obtained by dividing a predetermined wafer, arranged on a package substrate 304 via solder bumps 303, and sealed with resin 4. It is manufactured by becoming.

As shown in FIG. 20, the solder bump 303 is provided on the back side of the device chip 3, that is, on the side opposite to the side of the device chip 3 covered with the resin 4. The solder bump 303 connects the device chip 3 and the package substrate 304 on which the device chip 3 is disposed to enable electrical conduction.

As shown in FIG. 20, the package substrate 304 is provided on the back side of the solder bump 303, that is, on the side of the solder bump 303 opposite to the side on which the device chip 3 is provided. The device chip 3 is disposed on the surface side of the package substrate 304 via solder bumps 303. The package substrate 304 is provided in common with the plurality of device chips 3 and the division planning line 5. The package substrate 304 is a substrate with an electric circuit installed therein to electrically connect the device chip 3 and the printed wiring board on which the device chip 3 is mounted.

As shown in FIG. 20, a plurality of solder balls 305 are uniformly provided on the back side of the package substrate 304, that is, on the side opposite to the side of the package substrate 304 on which the device chip 3 is provided. . The solder ball 305 is used to electrically conductively bond the package substrate 304 and the printed wiring board after the semiconductor device 301 is divided into device chips 3.

The semiconductor device 301 is divided for each device chip 3 along the division line 5, and is divided into individual package devices 307 shown in FIGS. 19 and 20. The package device 307 includes a package substrate 304 on which solder balls 305 are placed, one device chip 3 mounted on the package substrate 304, and a resin sealing the device chip 3 ( 4) is provided. In Modification 1, the package device 307 is a form of a substantially minimal semiconductor component package in which internal wiring using bonding wires is not performed and a portion of the monolithic device chip 3 is exposed. This is WLCSP (Wafer Level Chip Size Package). Since the package area of the WLCSP package device 307 is the same as the horizontal area of the device chip 3, it can occupy a small area when surface mounting the monolithic device chip 3 on a printed circuit board. .

Next, a method for detecting a line scheduled to be divided according to Modified Example 1 of Embodiments 1 to 3 of the present invention will be described. FIG. 21 is an explanatory diagram showing an example of image data 315 obtained in the image processing step (ST4) of the method for detecting a scheduled division line according to Modification 1 of Embodiments 1 to 3. The method for detecting a line to be divided according to Modification Example 1 of Embodiments 1 to 3 of the present invention is a method for detecting a line to be divided according to each embodiment of Embodiments 1 to 3 of the present invention. Image data obtained in processing step ST4 is changed to image data 315.

Image data 315 shown in FIG. 21 is obtained by executing the image processing step (ST4) on the semiconductor device 301 as a detection target, and includes a first color pixel area 317 and a second color pixel area ( 318).

The first color pixel area 317 in the image data 315 corresponds to the area where the device chips 3 are arranged, as shown in FIG. 21 . As shown in FIG. 21, the second color pixel area 318 in the image data 315 is an area where the device chips 3 are not arranged, that is, the division line 5 and the outer surplus. It corresponds to area (6).

As described above, according to the method of detecting a line scheduled to be divided according to Modification 1 of Embodiments 1 to 3, in the method of detecting a line scheduled to be divided according to each of the embodiments of Embodiments 1 to 3, the line scheduled to be divided is Since the object of the line detection method is changed to the semiconductor device 301 and the image data obtained in the image processing step ST4 is changed to the image data 315, in each embodiment from Embodiment 1 to Embodiment 3, It has the same effect as the detection method for the division scheduled line.

[Variation 2]

FIG. 22 is a surface diagram showing an example of a semiconductor device 331 subject to the method for detecting a scheduled division line according to Modification Example 2 of Embodiments 1 to 3. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII of the semiconductor device 331 in FIG. 22. A method for detecting a line scheduled to be divided according to modified examples 2 of Embodiment 1 to Embodiment 3 of the present invention will be explained based on the drawings. The method for detecting a line scheduled to be divided according to Modification Example 2 of Embodiments 1 to 3 of the present invention is a method for detecting a line scheduled to be divided according to each embodiment of Embodiments 1 to 3 of the present invention. The object of the detection method of the scheduled line has been changed from the semiconductor device 1 to the semiconductor device 331. In the description of the method for detecting a segmentation line according to Modification Example 2 of Embodiments 1 to 3, the same parts as those in Embodiments 1 to 3 are assigned the same reference numerals and the description is omitted.

As shown in FIGS. 22 and 23, the semiconductor device 331 has a wafer shape, that is, a circular plate shape, and includes a plurality of device chips 3, a resin 4, a division line 5, and an outer peripheral surplus. It has a region 6, a groove 332, and a bump 333. The plurality of device chips 3, resin 4, division scheduled lines 5, and outer peripheral surplus areas 6 in the semiconductor device 331 are the same as those in the semiconductor device 1, so their detailed The explanation is omitted.

The semiconductor device 331 shown in FIGS. 22 and 23 is a form of a package of semiconductor components, and grooves 332 are formed along the division line 5 on a wafer that serves as the basis of a plurality of device chips 3. ) is formed as the basis of the half-cut groove, this half-cut groove is covered with resin 4 on the surface, sealed and buried, and polished on the back side, and this half-cut groove is connected to two devices adjacent to each other. It is manufactured by forming grooves 332 between chips 3.

The groove 332 is formed along the division line 5, and the resin 4 is embedded therein. The bump 333 is formed on the surface of the device chip 3 to protrude through the resin 4. The semiconductor device 331 is divided into package devices 337 shown in FIG. 23 by dividing the resin 4 in the groove 332 for each device chip 3 along the division line 5.

Next, a method for detecting a line scheduled to be divided according to modified example 2 of Embodiment 1 to Embodiment 3 of the present invention will be described. Compared with the detection method of a line scheduled to be divided according to each embodiment of Embodiments 1 to 3 of the present invention, the method for detecting a line scheduled to be divided according to Modification 2 of Embodiments 1 to 3 of the present invention is ultrasonic. The measurement step (ST2) and the preparatory ultrasonic measurement step (ST7) are approximately the same, except that the bump 333 may have a slight influence on the ultrasonic measurement.

As described above, according to the method for detecting a line to be divided according to Modification 2 of Embodiments 1 to 3, compared to the method for detecting a line to be divided according to each embodiment of Embodiments 1 to 3, ultrasonic Since they are approximately the same except that the bump 333 may have a slight influence during the ultrasonic measurement in the measurement step (ST2) and the preparatory ultrasonic measurement step (ST7), each of Embodiments 1 to 3 It has the same effect as the method for detecting a division scheduled line according to the embodiment.

In addition, according to the method for detecting a scheduled division line according to the above-described Embodiment 1, Embodiment 2, and Embodiment 3, and Modification Examples 1 and 2 of each embodiment, the following detection device for a scheduled division line can be obtained. there is.

(Appendix 1)

A detection device for detecting a division line for dividing a semiconductor device having a plurality of device chips sealed in resin into individual devices, comprising:

a holding table for holding the semiconductor device;

Ultrasonic measuring means for measuring a reflected echo by irradiating ultrasonic waves to a predetermined thickness portion of the semiconductor device while relatively moving the semiconductor device and the ultrasonic irradiation means held on the holding table in the horizontal direction at predetermined intervals;

Provided with control means for controlling each part of the ultrasonic measuring means,

A detection device for a line to be divided, wherein the control means detects the line to be divided from the distribution of the reflected echo.

(Appendix 2)

The ultrasonic measuring means,

Before measuring the reflected echo,

While moving the semiconductor device and the ultrasonic irradiation means relative to each other in the thickness direction of the semiconductor device at predetermined intervals, ultrasonic waves are irradiated to the inside of the semiconductor device to measure a preparatory reflection echo,

The control means is,

Before measuring the reflected echo,

A detection device for a segmentation line described in Appendix 1, wherein a position to irradiate ultrasonic waves when measuring the reflection echo is determined from the distribution of the prepared reflection echo in the thickness direction of the semiconductor device.

(Appendix 3)

A cutting device that separates a semiconductor device having a plurality of device chips sealed in resin into individual device chips, comprising:

a holding table for holding the semiconductor device;

a cutting unit that cuts the semiconductor device held on the holding table;

Ultrasonic measuring means for measuring a reflected echo by irradiating ultrasonic waves to a predetermined thickness portion of the semiconductor device while relatively moving the semiconductor device and the ultrasonic irradiation means held on the holding table in the horizontal direction at predetermined intervals;

Provided with control means for controlling each component,

A cutting device characterized in that the control means detects the dividing line from the distribution of the reflected echo.

The detection device and the cutting device for the division line, similar to the method for detecting the division line according to Embodiments 1 and 2, are configured to horizontally position a semiconductor device to be detected and an ultrasonic probe functioning as an ultrasonic irradiation means at predetermined intervals. While moving relative to , ultrasonic waves are irradiated to a predetermined thickness portion of the semiconductor device that is the detection target to measure a reflected echo, and a line to be divided is detected from the distribution of the reflected echo. For this reason, since the detection device of the line scheduled to be divided performs processing to detect the line scheduled to be divided, the possibility of cutting chips resulting from processing adhering to the device chip can be reduced.

Additionally, the present invention is not limited to the above embodiments. In other words, the present invention can be implemented with various modifications without departing from the gist of the present invention.

1, 301, 331: semiconductor device, 3: device chip, 4: resin, 5: line to be divided, 6: outsourcing surplus area, 7, 307, 337: package device, 8: rewiring layer, 9, 305: solder ball , 10: cutting device, 11: holding table, 12: holding surface, 13: rotation drive source, 20: cutting unit, 21: cutting blade, 22: spindle, 23: spindle housing, 30: X-axis moving unit, 31, 41 , 51: ball screw, 32, 42, 52: pulse motor, 33, 43, 53: guide rail, 34: X direction position detection unit, 35, 45: linear scale, 36, 46: readhead, 40: Y axis. Moving unit, 44: Y direction position detection unit, 50: Z axis movement unit, 54: Z direction position detection unit, 60: Imaging unit, 70: Ultrasonic inspection unit, 71: Ultrasonic probe, 71-1, 71-2, 71-3: position, 72: holder, 73: water supply path, 78: space, 79: water, 80: water supply unit, 90, 200: detection device of line to be divided, 100: control unit, 110: ultrasonic measurement Unit, 111: ultrasonic pulser, 112: ultrasonic receiver, 113: ultrasonic detector, 120: image processing unit, 130: display unit, 140, 140-1, 140-2, 140-3: ultrasonic wave, 150-1, 150-2 , 150-3: Reflected echo, 151, 152, 153, 171, 172, 173: Voltage signal, 155, 315: Image data, 157, 158, 181, 182, 183, 184, 185, 192, 194, 317, 318: pixel area, 160-1, 160-2: dot, 170-1, 170-2: prepared reflection echo, 180, 190: prepared image data, 230: scanning device, 234: sample stage, 235: strut, 236 : 3-axis scanner, 236-1: , 270: driving device, 280: image processing device, 303: solder bump, 304: package substrate, 332: groove, 333: bump

Claims (4)

A detection method for detecting a division line for dividing a semiconductor device having a plurality of device chips sealed in resin into individual devices, comprising:
a holding step of holding the semiconductor device on a holding table;
An ultrasonic measurement step of measuring a reflected echo by irradiating ultrasonic waves to a predetermined thickness portion of the semiconductor device while relatively moving the semiconductor device and the ultrasonic irradiation means held on the holding table in the horizontal direction at predetermined intervals;
A detection step of detecting the division line from the distribution of the reflected echo.
Including,
Before carrying out the ultrasonic measurement step,
A preparatory ultrasonic measurement step of measuring a preparatory reflection echo by radiating ultrasonic waves to the inside of the semiconductor device while moving the semiconductor device and the ultrasonic irradiation means relative to each other in the thickness direction of the semiconductor device at predetermined intervals;
A preparatory detection step of determining a position to irradiate ultrasonic waves in the ultrasonic measurement step from the distribution of the preparatory reflection echo in the thickness direction of the semiconductor device.
A method for detecting a line scheduled to be divided, comprising: The method of claim 1, wherein the detection step,
Further comprising an image processing step of converting the reflected echo into image data having color information,
A method for detecting a line to be divided, characterized in that the line to be divided is detected according to color information of the image data. The method of claim 1 or 2, wherein the preparation detection step comprises:
Further comprising a preparation image processing step of converting the preparation reflection echo into preparation image data having color information,
A method for detecting a line to be divided, wherein a position to irradiate ultrasonic waves in the ultrasonic measurement step is determined according to color information in the prepared image data. delete