TW201935537A - Method for detecting a predetermined dividing line can reduce the possibility of attaching the wafer with debris accompanying the processing - Google Patents

Method for detecting a predetermined dividing line can reduce the possibility of attaching the wafer with debris accompanying the processing Download PDF

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Publication number
TW201935537A
TW201935537A TW108103500A TW108103500A TW201935537A TW 201935537 A TW201935537 A TW 201935537A TW 108103500 A TW108103500 A TW 108103500A TW 108103500 A TW108103500 A TW 108103500A TW 201935537 A TW201935537 A TW 201935537A
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TW
Taiwan
Prior art keywords
ultrasonic
semiconductor
axis
division line
detection
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Application number
TW108103500A
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Chinese (zh)
Inventor
田篠文照
井谷博之
Original Assignee
日商迪思科股份有限公司
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Publication date
Priority to JP2018-018494 priority Critical
Priority to JP2018018494A priority patent/JP2019135754A/en
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201935537A publication Critical patent/TW201935537A/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S15/00Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems
    • G01S15/02Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems using reflection of acoustic waves
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

[Problem] To provide a method for detecting a predetermined division line, which reduces the possibility that the cutting chips accompanying the processing adhere to the element wafer.
[Solution] The detection method of the planned division line is a detection method of the planned division line. The planned division line is a division plan for singulating a semiconductor device having a plurality of element wafers sealed in a resin for each element wafer. The detection method of a line and a division | segmentation line is provided with the holding | maintenance process, an ultrasonic measurement process, and a detection process. In the holding step, the semiconductor device is held on a holding stage. In the ultrasonic measurement step, the semiconductor device held by the holding table and the ultrasonic probe functioning as an ultrasonic irradiation mechanism are relatively moved in a horizontal direction at a predetermined interval while irradiating a predetermined thickness portion of the semiconductor device. Ultrasound, and reflected echo was measured. In the detecting step, a predetermined division line is detected from the distribution of the reflected echo.

Description

Detection method of predetermined division line

FIELD OF THE INVENTION The present invention relates to a method for detecting a predetermined division line.

BACKGROUND OF THE INVENTION When a semiconductor device having a plurality of element wafers sealed in a resin is divided for each element wafer, in order to identify a predetermined division line, it is known to remove the outer peripheral portion of the semiconductor device and embed a groove of the predetermined division line. Method for exposing the resin (for example, Patent Document 1).
Prior art literature patent literature

Patent Document 1: Japanese Patent Laid-Open No. 2017-117990

SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in the method of Patent Document 1, since the outer peripheral portion of a semiconductor device is processed, there is a problem in that cutting chips accompanying the processing of the outer peripheral portion adhere to the element wafer. possibility.

The present invention has been made in view of the problems described above, and an object thereof is to provide a method for detecting a predetermined division line, which reduces the possibility that cutting chips accompanying the processing adhere to the element wafer.
Means to solve the problem

In order to solve the above-mentioned problems and achieve the object, the method for detecting a predetermined division line of the present invention is a detection method for detecting a predetermined division line. The predetermined division line is a semiconductor device having a plurality of element wafers sealed in a resin. The method for detecting a predetermined division line for singulating an element wafer includes: a holding step for holding the semiconductor device on a holding table; and an ultrasonic measurement step for the holding of the semiconductor device on the holding table. The semiconductor device and the ultrasonic irradiation mechanism are relatively moved in a horizontal direction at a predetermined interval, while radiating an ultrasonic wave to a predetermined thickness portion of the semiconductor device, and measuring the reflected echo; and a detection step based on the distribution of the reflected echo The predetermined division line is detected.

The detecting step may further include an image processing step of converting the reflected echo into image data having color information, and detecting the predetermined division line according to the color information of the image data.

Before the implementation of the ultrasonic measurement step, the method may include preparing an ultrasonic measurement step and moving the semiconductor device and the ultrasonic irradiation mechanism at a predetermined interval in the thickness direction of the semiconductor device while moving the semiconductor device to the semiconductor device. An ultrasonic wave is irradiated inside the device, and a reflection echo is measured; and a preparation detection step determines a position where the ultrasonic wave is irradiated in the ultrasonic measurement step from a distribution in a thickness direction of the semiconductor device prepared to reflect the echo.

The preparation and detection step may further include: a preparation image processing step for converting the preparation reflection echo into preparation image data having color information, and determining the color information in the preparation image data according to the color information of the preparation image data. The position where the ultrasonic wave is irradiated in the sonic measurement step.
Invention effect

The method for detecting a predetermined division line of the present invention has the effect of reducing the possibility that the cutting chips accompanying the processing adhere to the element wafer.

Embodiments for Implementing the Invention Embodiments (embodiments) for implementing the invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include constituent elements that can be easily conceived by a person having ordinary skill in the technical field and substantially the same constituent elements. In addition, the structures described below can be appropriately combined. In addition, various omissions, substitutions, or changes can be made in the scope without departing from the gist of the present invention.

[Embodiment 1]
A method for detecting a predetermined division line according to the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a front view showing an example of a semiconductor device 1 as an object of a method for detecting a predetermined division line according to the first embodiment. FIG. 2 is a cross-sectional view taken along the line II-II in the semiconductor device 1 of FIG. 1.

The method of detecting the planned division line in the first embodiment is a method of singulating the semiconductor device 1 shown in FIGS. 1 and 2 for each element wafer 3. As shown in FIGS. 1 and 2, the semiconductor device 1 has a wafer shape, that is, a circular plate shape, and has a plurality of element wafers 3, a resin 4, a predetermined division line 5, a remaining peripheral area 6, and a rewiring layer 8. , And solder ball 9.

In the semiconductor device 1, as shown in FIG. 1, the plurality of element wafers 3 are square, and are arranged in a two-dimensional manner along respective directions orthogonal to each other. The element wafer 3 is a high-integration semiconductor, and is manufactured by dividing a semiconductor wafer or an optical element wafer using silicon, sapphire, gallium or the like as a base material, and can constitute various memories or LSIs (large-scale integrated circuits, Large Scale Integration). The element wafer 3 is arranged on the rewiring layer 8 and is sealed with a resin 4.

In the semiconductor device 1, as shown in FIGS. 1 and 2, respectively, the resin 4 covers and seals a plurality of element wafers 3, a predetermined division line 5, and a remaining peripheral area 6 from the front. The resin 4 is preferably an epoxy resin which is a thermosetting liquid resin. In this case, the resin 4 is provided so as to cover the front surface of the semiconductor device 1 and is buried at a predetermined division line 5 and then heated at about 150 ° C. And cured resin.

In the semiconductor device 1, as shown in FIG. 1 and FIG. 2, the planned division line 5 is a type provided between two adjacent element wafers 3, and is divided according to each element wafer 3. When the wafer 3 is singulated, grooves to be divided are predetermined. A resin 4 is embedded in the planned division line 5.

In the semiconductor device 1, the remaining peripheral region 6 is a region that surrounds an element region in which a plurality of element wafers 3 are arranged, and in which a plurality of element wafers 3 are not arranged. The outer peripheral area 6 is covered with the resin 4 in the same manner as the plurality of element wafers 3 and the planned division line 5.

As shown in FIG. 2, the rewiring layer 8 is disposed on the back side of the element wafer 3, that is, on the opposite side to the resin wafer 4 side of the element wafer 3. The rewiring layer 8 is provided in common to the plurality of element wafers 3 and the planned division lines 5. The rewiring layer 8 is a layer provided with wirings, and the wirings electrically connect the element wafer 3 and a printed wiring board on which the element wafer 3 is mounted.

As shown in FIG. 2, the solder balls 9 are plurally and uniformly arranged on the back side of the redistribution layer 8, that is, on the opposite side of the redistribution layer 8 on which the component wafer 3 is disposed. The solder ball 9 is used for electrically conducting the rewiring layer 8 and a printed wiring board (not shown) after the semiconductor device 1 is divided for each element wafer 3.

The semiconductor device 1 shown in FIGS. 1 and 2 is manufactured by, for example, dividing a predetermined wafer into element wafers 3, arranging the element wafers 3 on the rewiring layer 8, and sealing the resin wafers 4 with resin 4. The semiconductor device 1 is divided for each element wafer 3 along a predetermined division line 5 to be divided into individual package elements 7 shown in FIGS. 1 and 2. The package element 7 includes a rewiring layer 8 on which solder balls 9 are disposed, one element wafer 3 assembled on the rewiring layer 8, and a resin 4 on which the element wafer 3 is sealed. In Embodiment 1, the package element 7 is a FOWLP (Fan Out Wafer Level Package), that is, when a single element wafer 3 is assembled on a printed circuit board on the front side, it can be made smaller. A form of packaging of semiconductor parts that is completed by the occupied area. The FOWLP package element 7 has a larger package area than the horizontal area of the element wafer 3, and can expand the terminals to the outside of the horizontal direction of the element wafer 3, so it is inferior to the horizontal area of the element wafer 3. It can also be used in applications with a large number of terminals. In this regard, it is more excellent than the WLCSP (Wafer Level Chip Size Package) described later.

Next, an example of the cutting device 10 including the predetermined division line detection device 90 used in the detection method of the predetermined division line in the first embodiment will be described. FIG. 3 is a perspective view showing a configuration example of a cutting device 10 including a predetermined division line detection device 90 used in the method for detecting a predetermined division line in the first embodiment.

The dicing device 10 is a device that cuts the dicing blade 21 into the semiconductor device 1 along a predetermined division line 5 and thereby divides the semiconductor device 1 for each element wafer 3 to singulate the semiconductor device 1 into individual package elements 7. . The cutting device 10 detects a predetermined division line 5 by visible light or infrared rays, and performs calibration by using the imaging unit 60 to detect the division line 5. The dicing device 10 is a semiconductor device 1 and an ultrasonic inspection unit 70 to be described later detects the division line 5 and performs calibration.

As shown in FIG. 3, the dicing device 10 includes a holding table 11 that sucks and holds the semiconductor device 1 on the holding surface 12, and a dicing unit 20 performs cutting processing along the planned division line 5 of the semiconductor device 1 held by the holding table 11. ; X-axis moving unit 30 moves the holding table 11 and the cutting unit 20 relatively in the X-axis direction parallel to the horizontal direction; Y-axis moving unit 40 moves the holding table 11 and the cutting unit 20 parallel to the horizontal direction and X Relative movement in the Y-axis direction orthogonal to the axis direction; Z-axis moving unit 50 moves the holding table 11 and the cutting unit 20 in the Z-axis direction orthogonal to both the X-axis direction and the Y-axis direction; the photographing unit 60 ; An ultrasonic inspection unit 70; and a control unit 100.

The holding table 11 faces the upper side in the Z-axis direction and the portion constituting the holding surface 12 has a disc shape formed of porous ceramics or the like, and is connected to a vacuum suction source (not shown) through a vacuum suction path (not shown), and The semiconductor device 1 placed on the holding surface 12 is sucked and held. In addition, the holding table 11 is rotated around an axis parallel to the Z-axis direction by a rotation drive source 13.

The X-axis moving unit 30 is a processing feed mechanism that moves the holding table 11 in the X-axis direction together with the rotation drive source 13 to move the holding table 11 in the X-axis direction. The Y-axis moving unit 40 is an index feeding mechanism that moves the cutting unit 20 along with the imaging unit 60 and the ultrasonic inspection unit 70 in the Y-axis direction to feed the holding table 11 index. The Z-axis moving unit 50 is a cutting-in feeding mechanism that moves the cutting unit 20 in the Z-axis direction together with the imaging unit 60 and the ultrasonic inspection unit 70. The X-axis moving unit 30, the Y-axis moving unit 40, and the Z-axis moving unit 50 each include a conventional ball screw 31, 41, 51, a conventional pulse motor 32, 42, 52, and a conventional guide rail 33, 43. , 53, the aforementioned ball screws 31, 41, 51 are provided so as to be rotatable around the axis, and the pulse motors 32, 42, 52 are used to rotate the ball screws 31, 41, 51 about the axis, and the guide rails 33, 43 are And 53 are supporting the holding table 11 or the cutting unit 20 so as to be able to move freely in the X-axis direction, the Y-axis direction, or the Z-axis direction.

The cutting device 10 includes an X-direction position detection unit 34 for detecting the X-direction position of the holding table 11 and a Y-direction position detection unit 44 for detecting the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70. And a Z-direction position detecting unit 54 for detecting the Z-direction positions of the cutting unit 20, the photographing unit 60, and the ultrasonic inspection unit 70. The X-direction position detection unit 34 and the Y-direction position detection unit 44 may include linear scales 35 and 45 parallel to the X direction or the Y direction, and a reading head 36 that moves integrally with the holding table 11 or the cutting unit 20, 46 composition. The Z-direction position detection unit 54 detects the position in the Z-direction of the cutting unit 20 by a pulse from the pulse motor 52. The X-direction position detection unit 34, the Y-direction position detection unit 44, and the Z-direction position detection unit 54 are the Y direction or the Z direction of the X direction of the holding table 11, the cutting unit 20, the photographing unit 60, and the ultrasonic inspection unit 70. The position is output to the control unit 100.

The cutting unit 20 includes a main shaft 22, a main shaft housing 23, and a cutting blade 21. The main shaft 22 rotates about an axis parallel to the Y-axis direction. The main shaft housing 23 houses the main shaft 22 and moves the unit through the Y-axis. 40 and the Z-axis moving unit 50 move in the Y-axis direction and the Z-axis direction. The cutting blade 21 is mounted on the main shaft 22. The cutting blade 21 is a cutting grindstone formed into an extremely thin ring shape, and is rotated by a main shaft 22 around an axis parallel to the Y-axis direction while being supplied with cutting water. A dicing blade in which the semiconductor device 1 performs dicing. The blade thickness value of the dicing blade 21 of the dicing unit 20 is preferably less than or equal to the width of the planned division line 5 of the semiconductor device 1.

The photographing unit 60 is a unit that photographs a workpiece held by the holding table 11. In the first embodiment, a configuration is shown in which it is arranged side by side with the cutting unit 20 in the X-axis direction, but the present invention is not limited thereto. herein. The imaging unit 60 is attached to the spindle housing 23. The imaging unit 60 is configured by a CCD camera that images an object to be processed that has been held on the holding table 11.

The ultrasonic inspection unit 70 is an ultrasonic inspection unit for inspecting the semiconductor device 1 held by the holding table 11, and is arranged at a position parallel to the cutting unit 20 and the imaging unit 60 in the X-axis direction. In the first embodiment, specifically, the ultrasonic inspection unit 70 is mounted on the side opposite to the side where the imaging unit 60 has the cutting unit 20.

FIG. 4 is an IV-IV cross-sectional view of the ultrasonic inspection unit 70 included in the cutting device 10 of FIG. 3. As shown in FIG. 4, the ultrasonic inspection unit 70 includes an ultrasonic probe 71 and a jig 72. As shown in FIG. 3, the ultrasonic probe 71 is electrically connected to the control unit 100 to perform information communication.

The ultrasonic probe 71 has a cylindrical shape with a diameter of 6 mm to 10 mm, and its axial direction is arranged parallel to the Z-axis direction. The ultrasonic probe 71 is electrically connected to the control unit 100 for information communication, and can respond to the operation of the ultrasonic measurement unit 110 of the control unit 100 as ultrasonic irradiation for radiating ultrasonic waves toward the lower side in the Z-axis direction. A mechanism is operated, or it is operated as an ultrasonic detection mechanism that receives and detects an ultrasonic wave from the lower side in the Z-axis direction. The details of the operation of the ultrasonic probe 71 will be described later together with the detailed description of the ultrasonic measurement unit 110.

As shown in FIG. 4, the clamp 72 projects toward the lower side of the Z-axis direction than the front end portion of the lower side of the Z-axis direction of the ultrasonic probe 71 to cover the lower side of the Z-axis direction of the ultrasonic probe 71. The entire circumference of the X-axis direction and the Y-axis direction of the front end portion is fixed to the ultrasonic probe 71. Thereby, as shown in FIG. 4, the jig 72 forms a space 78 having an opening toward the lower side in the Z-axis direction in a region lower than the front end portion of the ultrasonic probe 71 in the Z-axis direction.

As shown in FIG. 4, the jig 72 has a water supply path 73 for supplying water 79 to the space 78 from a water supply unit 80 provided outside the ultrasonic inspection unit 70. The water supply path 73 is a through hole that communicates the outer peripheral portion of the jig 72 with the space 78, and the outer peripheral portion side of the jig 72 is in communication with the water supply unit 80 through a water passage hose, a water pipe, or the like.

The water supply unit 80 is a device that functions as a water supply mechanism that supplies water 79 to the space 78 through the water supply path 73 and a space below the space 78 in the Z-axis direction. The water supply unit 80 may switch the state of supplying the water 79 and the state of stopping the supply according to the control of the control unit 100.

The control unit 100 is a unit that functions as a control mechanism that controls each of the above-mentioned constituent elements of the cutting device 10 so that the cutting device 10 performs a machining operation on the semiconductor device 1. The control unit 100 is a computer having an arithmetic processing device, a storage device, and an input / output interface device that can execute a computer program. The aforementioned arithmetic processing device has a microprocessor such as a CPU (Central Processing Unit), and the aforementioned storage device has Such as ROM (Read Only Memory) or RAM (Random Access Memory) memory. The arithmetic processing device of the control unit 100 executes a computer program stored in the ROM on the RAM, and generates a control signal for controlling the cutting device 10. The arithmetic processing device of the control unit 100 outputs the generated control signal to each component of the cutting device 10 through an input / output interface device. In addition, the control unit 100 is connected to a display unit 130 or an input unit (not shown). The display unit 130 is configured by a liquid crystal display device or the like that displays a state of a processing operation or an image. The input unit is in operation. It is used when a person registers processing information. The input unit is composed of at least one of a touch panel, a keyboard, and the like provided on the display unit 130.

As shown in FIG. 3, the control unit 100 is the above-mentioned constituent elements of the cutting device 10, such as the cutting unit 20, the X-axis moving unit 30, the Y-axis moving unit 40, the Z-axis moving unit 50, the photographing unit 60, and the ultrasonic wave. The inspection unit 70, the water supply unit 80, and the display unit 130 are electrically connected to perform information communication and control each part.

The control unit 100 obtains the X direction, the Y direction, and the Z direction of the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70 from the X direction position detection unit 34, the Y direction position detection unit 44, and the Z direction position detection unit 54. The position information in the directions, and the positions of the cutting unit 20, the photographing unit 60, and the ultrasonic inspection unit 70 are controlled by controlling the X-axis moving unit 30, the Y-axis moving unit 40, and the Z-axis moving unit 50. The control unit 100 thereby scans and moves the ultrasonic probe 71 along the upper surface in the Z-axis direction of the semiconductor device 1 which is the detection target. The control unit 100 scans and moves the ultrasonic probe 71 along, for example, measurement points arranged in the X-axis direction and the Y-axis direction at predetermined intervals. It should be noted that the predetermined interval is a measurement pitch. Although it is exemplified in the range of several hundred μm to 1.0 mm, the present invention is not limited to this, and may be appropriately changed according to the size of the semiconductor device 1 which is the detection target.

The control unit 100 controls the cutting operation of the cutting unit 20, the imaging operation of the imaging unit 60, and the water supply operation of the water supply unit 80. These functions of the control unit 100 are implemented by the arithmetic processing device of the control unit 100 executing a computer program stored in the storage device.

As shown in FIG. 3, the control unit 100 includes an ultrasonic measurement unit 110 and an image processing unit 120. The functions of the ultrasonic measurement unit 110 and the functions of the image processing unit 120 are realized by the computer processing unit of the control unit 100 executing a computer program stored in the storage unit.

The ultrasonic measurement unit 110 is a device that functions as an ultrasonic measurement mechanism that performs ultrasonic measurement using the ultrasonic probe 71. As shown in FIG. 3, the ultrasonic measurement unit 110 includes an ultrasonic pulser 111, an ultrasonic receiver 112, and Ultrasonic detector 113.

The ultrasonic pulser 111 applies a pulse-like voltage to the ultrasonic probe 71 to irradiate the ultrasonic probe 71 with an ultrasonic wave. The ultrasonic wave irradiated by the ultrasonic probe 71 is reflected on the front surface of the resin 4 and the boundary surface between the resin 4 and the element wafer 3 of the semiconductor device 1 which is a detection target, and becomes a reflected wave, and returns to the ultrasonic probe 71. The ultrasonic probe 71 detects the reflected wave, converts it into a voltage signal, and sends it to the ultrasonic receiver 112.

The ultrasonic receiver 112 amplifies the voltage signal input from the ultrasonic probe 71 and sends the amplified voltage signal to the ultrasonic detector 113. The ultrasonic detector 113 is provided with a gate, and measures the strength of the voltage signal in the gate. The gate is a time designation of a reflection echo to be detected. In the method for detecting a predetermined division line in the first embodiment, the ultrasonic detector 113 sets a gate for detecting a voltage signal that reflects a reflected wave reflected from, for example, a boundary surface between the resin 4 of the semiconductor device 1 and the element wafer 3 Reflected wave. The ultrasonic detector 113 obtains the intensity information of the voltage signal in the gate as measurement data.

In addition, the voltage signal of the reflected wave amplified by the ultrasonic receiver 112 is related to the information of the time between the ultrasonic probe 71 irradiating the ultrasonic wave and the return time. In this specification, the reflection echo obtained by the ultrasonic receiver 112 is constituted by the information of the voltage signal of the reflected wave and the time associated with the voltage signal of the reflected wave. This reflection echo is a unit in which time is expressed in μs, and the strength of the voltage signal is expressed in V. Graphs such as time on the horizontal axis and intensity on the vertical axis can be expressed as waveforms. . Here, since the time is the propagation time of the ultrasonic wave, the propagation speed of the ultrasonic wave is used for the information at this time, and thus the position in the thickness direction of the reflected wave can be obtained. Therefore, the ultrasonic detector 113 can set a gate, and the gate is a time designation of a voltage signal to be detected.

The image processing unit 120 acquires image data based on the measurement data obtained by the ultrasonic detector 113, the detection results of the X-direction position detection unit 34, the Y-direction position detection unit 44, and the Z-direction position detection unit 54. That is, the image processing unit 120 associates this measurement data with the position of the X-axis direction and the Y-axis direction of the semiconductor device 1 based on the detection results of the X-direction position detection unit 34 and the Y-direction position detection unit 44 and converts Into image data with color information. Specifically, the image processing unit 120 responds to the intensity of the voltage signal included in the measurement data in accordance with each measurement point of the measurement data obtained from the detection results of the X-direction position detection unit 34 and the Y-direction position detection unit 44. The measurement data is converted into color information set in advance, thereby producing image data. The foregoing image data is a collection of color information corresponding to the voltage signal in each measurement point. The image processing unit 120 converts the measurement data into image data having RGB information having a complex order (for example, 256 order). Alternatively, the image processing unit 120 may convert the measurement data into black-and-white image data having luminance information of a plurality of steps (for example, 256 steps). The color information included in the image data created by the image processing unit 120 is used when the control unit 100 executes the process of detecting the planned division line 5.

The control unit 100 detects the planned division line 5 based on the image data acquired by the image processing unit 120. The control unit 100 may send the image data obtained by the image processing unit 120 to the display unit 130 for display. The control unit 100 may superimpose the information of the predetermined division line 5 (for example, the center position in the width direction of the predetermined division line 5) detected from the image data on the image data and send it to the display unit 130 for display.

The display unit 130 acquires and displays image data created by the image processing unit 120 from the control unit 100. The display unit 130 may obtain the information of the planned division line 5 obtained by the control unit 100 from the control unit 100, and display the information on the image data by superimposing it. The display unit 130 is an example of a liquid crystal display device, but may be a touch panel having a function as an input device at the same time.

The holding table 11 of the cutting device 10 shown in FIG. 3, the ultrasonic inspection unit 70, and the X-axis movement unit 30 and the Y-axis movement unit 40 that move the ultrasound inspection unit 70 in the X, Y, and Z directions. The Z-axis moving unit 50, the water supply unit 80, and the control unit 100 are detection devices 90 that detect the planned division line 5 and are used in the method for detecting the planned division line 5 according to the first embodiment. In addition, the ultrasonic inspection unit 70 and the ultrasonic measurement unit 110 constitute an ultrasonic measurement mechanism. The ultrasonic measurement mechanism is configured so that the semiconductor device 1 and the ultrasonic probe 71 held by the holding table 11 are horizontally spaced at a predetermined interval. While moving up, the ultrasonic wave is irradiated to a predetermined thickness portion of the semiconductor device 1 and the reflected echoes 150-1, 150-2, and 150-3 are measured (see FIGS. 7 and 8).

Next, a method for detecting a planned division line according to the first embodiment will be described. The method of detecting the planned division line in the first embodiment is the operation of the detection device 90 for the planned division line. In the first embodiment, the dicing device 10 detects the division of the semiconductor device 1 into individual element wafers 3 by a singulation. A method of dividing the semiconductor device 1 into individual package elements 7 along a predetermined line 5 and cutting device 10 along the detected division predetermined line 5. FIG. 5 is a flowchart of a method for detecting a predetermined division line according to the first embodiment.

The method for detecting a predetermined division line according to the first embodiment is a detection method for detecting a predetermined division line 5 using a detection device 90 for a predetermined division line shown in FIG. 3. As shown in FIG. 5, the method includes a holding step ST1 and an ultrasonic measurement step. ST2 and detection step ST3. The detection step ST3 includes an image processing step ST4. The method for detecting a predetermined division line according to the first embodiment further includes a calibration step ST5 and a cutting step ST6.

The holding step ST1 is a step of holding the semiconductor device 1 as a detection target on the holding stage 11. In the holding step ST1, in detail, first, in a state where the end portion on the lower side in the Z-axis direction of the jig 72 is sufficiently separated from the holding surface 12 of the holding stage 11 of the semiconductor device 1 which is a detection target, The semiconductor device 1, which is an object to be detected, is transported using a transport device (not shown) from a storage portion of the semiconductor device 1 (not shown), and is placed on the holding surface 12 of the holding table 11. In the holding step ST1, a vacuum suction source is then used to perform a suction operation to suck and hold the semiconductor device 1 as a detection target on the holding surface 12 of the holding stage 11. As described above, by performing the holding step ST1, the semiconductor device 1 as a detection target can be held on the holding surface 12 of the holding table 11 so as not to be in any of the X-axis direction, the Y-axis direction, and the Z-axis direction. mobile.

The ultrasonic wave irradiated by the ultrasonic probe 71 has low propagation efficiency in the air. Therefore, in a state where air exists between the front end portion of the lower end in the Z-axis direction of the ultrasonic probe 71 and the semiconductor device 1 as a detection target, the measurement of the reflected echo cannot be performed. Therefore, when measuring the reflected echo, as shown in FIG. 4, it is necessary to form a state in which a region between the lower front end portion in the Z-axis direction of the ultrasonic probe 71 and the semiconductor device 1 as a detection target is filled with water 79.

Therefore, in the method for detecting a predetermined division line, the cutting device 10 performs a water supply step before the ultrasonic measurement step ST2 is performed, and the water supply step is a step in which the state of the reflected echo can be measured. In the water supply step, in detail, first, the Z-axis moving unit 50 is controlled by the control unit 100 to move the ultrasonic probe 71 to the lower side in the Z-axis direction, as shown in FIG. 4, thereby moving the jig 72 An end portion on the lower side in the Z-axis direction is closer to a predetermined distance d from a surface on the upper side in the Z-axis direction of the semiconductor device 1 which is the detection target. Here, the predetermined distance d is a parameter indicating the position of the ultrasonic probe 71 in the Z-axis direction, specifically, a few mm. The position of the ultrasonic probe 71 in the Z-axis direction is such that the ultrasonic probe 71 The focal point of the ultrasonic wave irradiated by 71 is set at a position on or near the boundary surface between the resin 4 and the element wafer 3.

In the water supply step, the water supply operation of the water supply unit 80 is controlled by the control unit 100, so that the water supply unit 80 supplies water 79 to the space 78 through the water supply path 73, and the space 78 is more in the Z-axis direction than the space 78. Underside space. By performing the water supply step in this manner, as shown in FIG. 4, a region between the lower front end portion in the Z-axis direction of the ultrasonic probe 71 and the semiconductor device 1 as a detection target can be filled with water 79. The state can be set to a state where the reflected echo can be measured.

The control unit 100 controls the water supply operation of the water supply unit 80 until the execution of the subsequent ultrasonic measurement step ST2 ends. Until the execution of the subsequent ultrasonic measurement step ST2, the water supply unit 80 continuously supplies water 79 to the space 78 and the space below the Z axis direction from the space 78 through the water supply path 73, thereby maintaining the available space. The state of the reflected echo is measured.

In the water supply step, the ultrasonic probe 71 is positioned so that the end portion on the lower side of the jig 72 approaches the predetermined distance d with respect to the upper surface of the semiconductor device 1. Specifically, the predetermined distance d is ideally a position where the ultrasonic probe 71 transmits and receives ultrasonic waves in the water supply step, and the intensity of the reflected echo from the boundary surface between the resin 4 and the element wafer 3 will be It becomes the position in the extreme Z-axis direction.

Since the semiconductor device 1 as a detection target is the package element 7 constituting the FOWLP described above, the element wafer 3 is arranged near the center in the Z-axis direction of the semiconductor device 1 as a detection target. Therefore, the position in the Z-axis direction of the boundary surface between the resin 4 and the element wafer 3 can be roughly calculated when the thickness in the Z-axis direction of the element wafer 3 is known. Therefore, when the thickness in the Z-axis direction of the element wafer 3 is known, the aforementioned predetermined distance d can be calculated from the distance between the ultrasonic probe 71 and the focal point of the ultrasonic wave, which is set in advance. Therefore, in the stage of the water supply step, the cutting device 10 moves the end of the lower side of the jig 72 to a predetermined distance d with respect to the upper surface of the semiconductor device 1, thereby moving the ultrasonic probe 71 to The focal point of the ultrasonic wave irradiated by the ultrasonic probe 71 is set to a position on or near the boundary surface between the resin 4 and the element wafer 3. With this setting, the dicing device 10 can reliably detect the reflected wave from the boundary surface between the resin 4 of the semiconductor device 1 and the element wafer 3, and can be set to a state where it can be measured with high accuracy.

The ultrasonic measurement step ST2 is to move the semiconductor device 1 which is a detection target held by the holding table 11 and the ultrasonic probe 71 functioning as an ultrasonic irradiation mechanism in a horizontal direction relative to each other at a predetermined interval while moving the detection target. That is, the semiconductor device 1 is irradiated with ultrasonic waves at a predetermined thickness, and the reflected echoes 150-1, 150-2, and 150-3 illustrated in FIGS. 7 and 8 are measured. Here, the predetermined thickness portion indicates a boundary surface between the resin 4 of the semiconductor device 1 and the element wafer 3 and the vicinity of the boundary surface. In addition, when the ultrasonic wave is irradiated to a predetermined thickness portion of the semiconductor device 1, it means that the focal point of the ultrasonic wave irradiated by the ultrasonic probe 71 is set on the boundary surface of the resin 4 and the element wafer 3 or near the interface. In the first embodiment, before the ultrasonic measurement step ST2 is performed, the position of the ultrasonic probe 71 in the Z-axis direction is adjusted to a position specified by a predetermined distance d while the water supply step is being performed. Ultrasound is irradiated in a portion capable of this predetermined thickness.

FIG. 6 is an explanatory diagram illustrating the ultrasonic measurement step ST2 of FIG. 5. FIG. 7 is an explanatory diagram showing an example of a reflected echo measured in the ultrasonic measurement step ST2 of FIG. 5. FIG. 8 is an explanatory diagram showing another example of the reflected echo measured in the ultrasonic measurement step ST2 of FIG. 5. In FIG. 6, the ultrasonic probe 71 and the semiconductor device 1 as a detection target are shown, and other components of the detection device 90 that divide the predetermined line are omitted.

Hereinafter, in addition to FIG. 6, this description uses FIG. 7 and FIG. 8 to explain the following cases. In the ultrasonic measurement step ST2, as shown in FIG. 6, the cutting device 10 causes the ultrasonic probe 71 to be divided according to the plan. A case where the position 71-1 on the line 5, the position 71-2 on the element wafer 3, and the position 71-3 on the other division line 5 are relatively moved relative to the semiconductor device 1 in the order.

It should be noted that when the echo echo 150-1 shown in FIG. 7 is irradiated with the ultrasonic wave 140-1 by the ultrasonic probe 71 located at the position 71-1 shown in FIG. The reflected echo obtained by the ultrasonic receiver 112. The reflected echo 150-3 shown in FIG. 7 is received by the ultrasonic measurement unit 110 when the ultrasonic probe 71 located at the position 71-3 shown in FIG. 6 irradiates the ultrasonic wave 140-3. The reflected echo obtained by the reflector 112. The reflected echoes 150-1, 150-3 have waveforms similar to each other.

As shown in FIG. 7, the reflection echoes 150-1 and 150-3 include a voltage signal 151 of a front wave, which is a reflected wave, which is reflected on the front surface of the resin 4 of the semiconductor device 1 as a detection target, and a semiconductor device, which is a detection object. The voltage signal 152 on the back surface of 1, that is, the reflection wave reflected on the boundary surface between the back surface of the redistribution layer 8 and the water 79 is the back wave. The reflection echoes 150-1 and 150-3 are reflection echoes obtained at the positions 71-1 and 71-3 on the division line 5. Therefore, the reflection echoes 150-1 and 150-3 are not reflected on the boundary surface between the resin 4 and the element wafer 3. The voltage signal of the reflected wave.

The reflection echo 150-2 shown in FIG. 8 is obtained when the ultrasonic probe 71 at the position 71-2 shown in FIG. 6 irradiates the ultrasonic wave 140-2. The reflected echo obtained by the sound wave receiver 112.

As shown in FIG. 8, the reflected echo 150-2 has the same front wave voltage signal 151 and back wave voltage signal 152 as the reflected echoes 150-1 and 150-3. The voltage signal 153 of the interface wave that is the reflected wave reflected from the boundary surface with the element wafer 3. Since the reflection echo 150-2 is a reflection echo obtained at the position 71-2 on the element wafer 3, it becomes a reflection echo of the voltage signal 153 having an interface wave like this.

In the ultrasonic measurement step ST2, as described above, ultrasonic measurement is performed by the ultrasonic pulser 111 and the ultrasonic receiver 112 of the ultrasonic measurement unit 110 using the ultrasonic probe 71, and the The position 71-2 obtains the reflected echo 150-2 of the voltage signal 153 having the interface wave, and the positions 71-1 and 71-3 on the predetermined division line 5 obtain the reflected echo 150 of the voltage signal 153 without the interface wave -1, 150-3.

In the ultrasonic measurement step ST2, the control unit 100 controls the X-axis moving unit 30 and the Y-axis moving unit 40 so that the ultrasonic probes 71 are arranged along the X-axis direction and the Y-axis direction at predetermined intervals, respectively. The scanning points are scanned and moved to obtain reflection echoes 150-1, 150-2, and 150-3 at all the measurement points. In the first embodiment, in the ultrasonic measurement step ST2, the control unit 100 is moved while the semiconductor device 1 and the ultrasonic probe 71 held by the holding table 11 are relatively moved in a horizontal direction at a predetermined interval. All the acquired reflection echoes 150-1, 150-2, and 150-3 are temporarily stored. That is, in the first embodiment, the control unit 100 temporarily stores the same number of reflection echoes 150-1, 150-2, and 150-3 as the measurement points.

The detection step ST3 is performed after the ultrasonic measurement step ST2, and is a step of detecting the planned division line 5 from the distribution of the reflected echo. In the detection step ST3, in detail, first, the ultrasonic detector 113 of the ultrasonic measurement unit 110 is a reflected echo 150-1, 150-2 obtained by the ultrasonic receiver 112 of the ultrasonic measurement unit 110. , 150-3, to measure the strength of the voltage signal in the gate, which is set within a predetermined range including the time for detecting the voltage signal 153 of the interface wave. In the detection step ST3, the voltage signal measured by the ultrasonic detector 113 of the ultrasonic measurement unit 110 becomes a positive value that is definitely larger than 0 at the position 71-2 on the element wafer 3. Positions 71-1 and 71-3 at 5 will be at or near 0. In the detection step ST3, the intensity information of the voltage signal 153 of the interface wave in the gate is obtained as measurement data.

In the detection step ST3, the control unit 100 classifies all the measurement points into the interface wave based on the intensity information of the interface wave voltage signal 153 obtained by the ultrasonic detector 113 of the ultrasonic measurement unit 110 as measurement data. The intensity of the voltage signal 153 is a measurement point at which the strength of the voltage signal 153 is greater than a predetermined threshold value, and the intensity of the voltage signal 153 of the interface wave does not reach the measurement point at a predetermined threshold value. In the detection step ST3, the control unit 100 can thereby classify all the measurement points into: the measurement information of the intensity signal of the interface wave voltage signal 153 having a positive value which is clearly larger than 0, and the voltage of the interface wave. The intensity information of the signal 153 is a measurement point of 0 or a value near 0.

In the detection step ST3, the control unit 100 determines the measurement point at which the intensity of the interface wave voltage signal 153 is equal to or greater than a predetermined threshold value as the measurement point on the element wafer 3, and determines the intensity of the interface wave voltage signal 153. A measurement point that does not reach a predetermined threshold value is determined as a measurement point on the non-element wafer 3. In the detection step ST3, after that, the control unit 100 determines the measurement points other than the measurement points on the non-peripheral remaining area 6 among the measurement points on the non-element wafer 3 as being on the predetermined division line 5. Measurement point. In this way, in the detection step ST3, the planned division line 5 can be detected from the distribution of the voltage signals 151, 152, and 153 of each of the reflected echoes 150-1, 150-2, and 150-3.

The detection step ST3 preferably includes an image processing step ST4. In this case, the image processing step ST4 converts the distribution of the voltage signals 151, 152, and 153 of each of the reflected echoes 150-1, 150-2, and 150-3 into image data having color information. step. In this case, the detection step ST3 is a step of detecting the planned division line 5 based on the color information of the image data obtained by conversion in the image processing step ST4.

When the detection step ST3 includes the image processing step ST4, in the image processing step ST4, in detail, the control unit 100 is an interface wave voltage obtained by the ultrasonic detector 113 of the ultrasonic measurement unit 110. The intensity information of the signal 153 is to set the pixel at the measurement point including the voltage signal 153 of the interface wave to a predetermined threshold or more as the first color, and set the intensity of the voltage signal 153 including the interface wave to not reach the predetermined threshold The pixels at the measurement points are set to the second color, and an image including the first color and the second color is created. In the image processing step ST4, by this means, the control unit 100 can create the pixel of the measurement point including the intensity information of the voltage signal 153 of the interface wave to be a positive value which is clearly larger than 0 as the first color, and The pixel of the measurement point including the intensity information of the voltage signal 153 of the interface wave to a value of 0 or a value near 0 is an image of the second color.

FIG. 9 is an explanatory diagram showing an example of image data obtained in the image processing step ST4 in FIG. 5. The image data 155 shown in FIG. 9 is data obtained by performing the image processing step ST4 on the semiconductor device 1 as a detection target, and has a pixel region 157 of a first color and a pixel region 158 of a second color.

As shown in FIG. 9, the pixel region 157 of the first color in the image data 155 corresponds to a region where the element wafer 3 is arranged. As shown in FIG. 9, the pixel region 158 of the second color in the image data 155 corresponds to a region where the element wafer 3 is not arranged, that is, a predetermined division line 5 and a remaining peripheral region 6.

When the detection step ST3 includes the image processing step ST4, in the detection step ST3, the control unit 100 firstly converts the first color pixel region 157 into the image data obtained by the conversion in the image processing step ST4. It is determined that the element wafer 3 is arranged, and the pixel region 158 of the second color is determined as a region where the element wafer 3 is not arranged. In the case where the detection step ST3 includes the image processing step ST4, in the detection step ST3, the control unit 100 then excludes the remaining peripheral area 6 from the area determined to be where the element wafer 3 is not arranged. The area is determined as the planned division line 5. In this way, in the detection step ST3, the planned division line 5 can be detected from the distribution of the voltage signals 151, 152, and 153 of each of the reflected echoes 150-1, 150-2, and 150-3.

In addition, the control unit 100 may send the image data created in the image processing step ST4 and the information of the planned division line 5 detected in the detection step ST3 to the display unit 130 for display. In this case, it can be confirmed at a glance that the division line 5 has been detected.

The calibration step ST5 is performed after the detection step ST3, and the control unit 100 performs the aforementioned calibration using the information of the planned division line 5 (for example, the center position in the width direction of the planned division line 5) detected in the detection step ST3. step. In the calibration step ST5, specifically, the control unit 100 performs processing such as pattern matching, and the aforementioned pattern matching is used to perform the predetermined division line 5 and the cutting unit 20 detected in the detection step ST3. The cutting blades 21 are aligned. In this way, in the calibration step ST5, since it is performed using the position information of the division planned line 5 of the portion to be cut by the cutting blade 21, which is detected in the detection step ST3, the execution can be improved after the calibration step ST5 The cutting position accuracy of the cutting blade 21 in the cutting step ST6.

The dicing step ST6 is performed after the calibration step ST5, and the semiconductor device 1 is diced with the dicing blade 21 along the predetermined division line 5. In the dicing step ST6, specifically, first, the control unit 100 performs a dicing process on the semiconductor device 1 with the dicing blade 21 along the predetermined division line 5 according to the implementation result of the calibration step ST5.

As described above, according to the method for detecting a predetermined division line according to the first embodiment, the semiconductor device 1 as a detection target and the ultrasonic probe 71 functioning as an ultrasonic irradiation mechanism are relatively moved in a horizontal direction at a predetermined interval. While irradiating ultrasonic waves to a predetermined thickness portion of the semiconductor device 1 as a detection target, and measuring the reflected echoes 150-1, 150-2, and 150-3, the reflected echoes 150-1, 150-2, and 150 are then measured. The distribution of the voltage signals 151, 152, and 153 of each wave of -3 is used to detect the planned division line 5. Therefore, since the method for detecting the planned division line in the first embodiment does not require processing such as cutting processing for detecting the planned division line 5, it is possible to reduce the possibility that the cutting chips accompanying the processing adhere to the element wafer 3.

In addition, the method for detecting a predetermined division line according to the first embodiment is to convert the voltage signal 153 of the interface waves reflecting the echoes 150-1, 150-2, and 150-3 into image data 155 having color information. The color information of the image data 155 is used to detect the planned division line 5. Therefore, it can be confirmed at a glance that the planned division line 5 has been detected.

[Embodiment 2]
A method for detecting a predetermined division line according to the second embodiment of the present invention will be described with reference to the drawings. The method for detecting a predetermined division line according to the second embodiment is the same as the method for detecting a predetermined division line according to the first embodiment, and it is an operation of the detection device 90 for the predetermined division line. In the description of the method for detecting a predetermined division line in the second embodiment, the same reference numerals are given to the same parts as those in the first embodiment, and the description is omitted.

FIG. 10 is a flowchart of a method for detecting a predetermined division line according to the second embodiment. As shown in FIG. 10, the method for detecting a predetermined division line according to the second embodiment includes a holding step ST1, an ultrasonic measurement step ST2, a detection step ST3, and a calibration step ST5 included in the method for detecting the predetermined division line according to the first embodiment. In addition to the cutting step ST6, before the implementation of the ultrasonic measurement step ST2 and the detection step ST3, the method further includes a preparation ultrasonic measurement step ST7, a preparation detection step ST8, and an interface wave detection determination step ST10. The preparation detection step ST8 includes a preparation image processing step ST9.

In the water supply step, the ultrasonic probe 71 is moved to a position such that the focal point of the ultrasonic wave is set near the center in the Z-axis direction of the semiconductor device 1. Alternatively, in the water supply step, the ultrasonic probe 71 is moved to a position where the ultrasonic focus is set near the center in the Z-axis direction of the semiconductor device 1, and then the ultrasonic probe 71 is lowered in the Z-axis direction. If the front side portion of the side comes into contact with the upper surface of the semiconductor device 1 in the Z-axis direction, which is the object to be detected, the lower front end portion will touch the upper surface of the semiconductor device 1 if it is moved slightly. position. With this setting, the ultrasonic probe 71 can be set to a state in which the reflected echo from the boundary surface between the resin 4 of the semiconductor device 1 and the element wafer 3 can be reliably detected.

However, in a state where the ultrasonic probe 71 is moved like this, for example, when the thickness of the element wafer 3 is unknown, it is particularly difficult to measure the resin 4 and the element wafer 3 from the semiconductor device 1 with sufficiently high accuracy. In the case of the reflected wave at the boundary surface of the boundary wave. Therefore, in the method for detecting a predetermined division line in Embodiment 2, even if the thickness in the Z-axis direction of the element wafer 3 is not known, the preparation of the ultrasonic wave is performed before the implementation of the ultrasonic measurement step ST2 and the detection step ST3. The acoustic wave measurement step ST7, the preparation detection step ST8, and the interface wave detection determination step ST10 can be set to measure interface waves that are reflected waves from the boundary surface between the resin 4 of the semiconductor device 1 and the element wafer 3 with a sufficiently high accuracy. Of the state.

The preparation of the ultrasonic measurement step ST7 is performed while relatively moving the semiconductor device 1 which is a detection target and the ultrasonic probe 71 which functions as an ultrasonic irradiation mechanism at a predetermined interval in the thickness direction of the semiconductor device 1, that is, the Z-axis direction. Ultrasonic waves are irradiated to the inside of the semiconductor device 1, and steps for preparing reflection echoes 170-1 and 170-2 shown in Figs. 12 and 13 are measured. The preparation ultrasonic measurement step ST7 is performed after the water supply step is performed. In the following, this specification is appropriate to distinguish the reflected echoes measured in the preparation of the ultrasonic measurement step ST7 from the reflected echoes 150-1, 150-2, and 150-3 measured in the ultrasonic measurement step ST2. These are called ready reflection echoes 170-1, 170-2.

FIG. 11 is an explanatory diagram illustrating the preparation ultrasonic measurement step ST7 of FIG. 10. FIG. 12 is an explanatory diagram showing an example of the prepared reflected echo measured in the prepared ultrasonic measurement step ST7 of FIG. 10. FIG. 13 is an explanatory diagram showing another example of the preparation reflection echo measured in the preparation ultrasonic measurement step ST7 in FIG. 10. In addition, in FIG. 11, the ultrasonic probe 71 and the semiconductor device 1 as a detection target are shown, and other components of the detection device 90 that divide the predetermined line are omitted.

In preparation for the ultrasonic measurement step ST7, in detail, first, the control unit 100 controls the X-axis moving unit 30 and the Y-axis moving unit 40 to move the ultrasonic probe 71 in the X-axis direction or the Y-axis direction. As shown in FIG. 11, this moves so as to come to the upper side in the Z-axis direction with respect to the semiconductor device 1 as a detection target.

In preparation for the ultrasonic measurement step ST7, the control unit 100 controls the Z-axis moving unit 50 so that the ultrasonic probe 71 is spaced at a predetermined interval from the position on the lower boundary of the Z-axis direction at a predetermined interval, for example, every 10 μm Move left and right to a position above the Z-axis direction to the upper limit of the Z-axis direction, thereby irradiating ultrasonic waves and obtaining reflected waves while moving at a predetermined interval in the Z-axis direction. That is, in the preparation ultrasonic measurement step ST7, the ultrasonic probe 71 is gradually moved in a direction away from the state closest to the semiconductor device 1 as the detection target, while irradiating the ultrasonic wave and obtaining a reflected wave. Here, the position of the lower boundary of the ultrasonic probe 71 in the Z-axis direction is set as the position of the ultrasonic probe 71 moved in the stage of the water supply step. The position of the upper limit of the ultrasonic probe 71 in the Z-axis direction is a position where when the ultrasonic probe 71 is moved to the upper side in the Z-axis direction, the resin 4 of the semiconductor device 1 which is the detection target is moved. The position of the ultrasonic probe 71 at the time when the intensity of the voltage signal 171 (see FIG. 12 and FIG. 13) of the front wave, which is a reflected echo reflected from the front side, changes from increasing to decreasing. Furthermore, in the first embodiment, in the preparation of the ultrasonic measurement step ST7, it is exemplified that the ultrasonic probe 71 is moved from the position on the lower side of the Z-axis direction to the upper side in the Z-axis direction to the Z-axis direction. The form of the upper limit position, but the present invention is not limited to this, and the ultrasonic probe 71 may be moved from the upper limit position in the Z-axis direction to the lower side in the Z-axis direction to the Z-axis direction. Position of the lower boundary.

In the preparation of the ultrasonic measurement step ST7, the ultrasonic probe 71 is moved toward the upper side in the Z-axis direction while irradiating the ultrasonic wave, thereby bringing the focus of the ultrasonic wave irradiated by the ultrasonic probe 71 toward the upper side in the Z-axis direction. mobile. In preparation for the ultrasonic measurement step ST7, the ultrasonic measurement unit 110 is irradiated with the ultrasonic probe 71 in each state in which the ultrasonic probe 71 is moved at a predetermined interval in the Z-axis direction. The ultrasonic wave 140 detects and obtains the prepared reflection echoes 170-1 and 170-2 shown in FIGS. 12 and 13.

Hereinafter, in addition to FIG. 11, this specification uses FIG. 12 and FIG. 13 to explain a case where, in the preparation ultrasonic measurement step ST7, as shown in FIG. 11, the ultrasonic probe 71 is aligned along a straight line. When the semiconductor device 1 is relatively moved relative to the detection target to obtain the reflected echoes 170-1 and 170-2, the straight line is along the Z-axis direction and includes the following positions: the ultrasonic probe is made The focal point of the ultrasonic wave 140 irradiated by 71 is set to a position 160-1 inside the resin 4 on the upper side in the Z-axis direction than the element wafer 3, and the focal point of the ultrasonic wave 140 is set to the element wafer 3. The location of the inner point 160-2.

As shown in FIG. 11, the prepared reflection echo 170-1 shown in FIG. 12 is a case where the focus of the ultrasonic wave 140 irradiated by the ultrasonic probe 71 is set to a point 160-1 and the ultrasonic wave 140 is irradiated and detected. Next, the reflected echo obtained by the ultrasonic receiver 112 of the ultrasonic measurement unit 110 is obtained.

As shown in FIG. 12, the preparation reflection echo 170-1 includes a voltage signal 171 of a front wave, which is a reflected wave, which is reflected on the front surface of the resin 4 of the semiconductor device 1 as a detection target, and a back surface of the semiconductor device 1, which is a detection target. That is, the voltage signal 172 of the back wave, which is the reflected wave reflected by the back surface of the redistribution layer 8 and the boundary surface of the water 79. Preparation of reflection echo 170-1 Since the focal point of the irradiated ultrasonic wave 140 is set at a point 160-1 closer to the resin 4 side than the boundary surface between the resin 4 and the element wafer 3, The voltage signal of the reflected wave reflected by the boundary surface. Furthermore, in general, the voltage signal of the reflected wave caused by the contact interface is much stronger than the voltage signal of the reflected wave caused by the bonding interface. Therefore, depending on the position of the Z-axis direction of the focal point of the ultrasonic wave 140, The following phenomenon occurs: Although the voltage signal of the reflected wave reflected from the boundary surface between the resin 4 and the element wafer 3 cannot be detected, the back surface of the rewiring layer 8 which is lower than the boundary surface toward the Z axis direction can be detected. The voltage signal 172 of the back wave, which is a reflected wave reflected from the boundary surface with the water 79.

As shown in FIG. 11, the preparation of the reflected echo 170-2 shown in FIG. 13 is a case where the focus of the ultrasonic wave 140 irradiated by the ultrasonic probe 71 is set to the point 160-2 and the ultrasonic wave 140 is irradiated and detected. Next, the reflected echo obtained by the ultrasonic receiver 112 of the ultrasonic measurement unit 110 is obtained.

As shown in FIG. 13, in addition to the preparation of the reflected echo 170-2, the preparation of the reflected echo 170-2 has the same front wave voltage signal 171 and the back wave voltage signal 172, and also has a resin 4 and an element. The reflected wave reflected by the boundary surface of the wafer 3 is the voltage signal 173 of the interface wave. Prepare to reflect the echo 170-2. Since the focal point of the irradiated ultrasonic wave 140 is set to a point 160-2 slightly closer to the element wafer 3 side than the boundary surface between the resin 4 and the element wafer 3, it is compared with the point 160-1. Below, the focal point of the irradiated ultrasonic wave 140 will be closer to the boundary surface between the resin 4 and the element wafer 3, so it will become a ready reflection echo with a voltage signal 173 having an interface wave.

In preparation for the ultrasonic measurement step ST7, as described above, the ultrasonic receiver 112 of the ultrasonic measurement unit 110 performs ultrasonic measurement using the ultrasonic probe 71, and the ultrasonic wave irradiated by the ultrasonic probe 71 When the focal point of 140 is set to point 160-1, a ready-to-reflect echo 170-1 is obtained to obtain a voltage signal 173 without an interface wave, and the focal point of the ultrasonic wave 140 irradiated by the ultrasonic probe 71 is set to In the case of the point 160-2, a ready reflection echo 170-2 having a voltage signal 173 having an interface wave is obtained.

In preparation for the ultrasonic measurement step ST7, the control unit 100 controls the Z-axis moving unit 50 so that the ultrasonic probe 71 is scanned and moved along the respective positions arranged in the Z-axis direction at predetermined intervals, so that the Prepared reflection echoes 170-1 and 170-2 were obtained at all measurement points. Further, in the preparation ultrasonic measurement step ST7 of the method for detecting a predetermined division line according to the second embodiment, the ultrasonic probe 71 is moved in the Z-axis direction so that the focal point of the ultrasonic wave is moved in the Z-axis direction. Between the resin 4 and at least two points on the boundary surface of the element wafer 3, measurement reflection echoes 170-1 and 170-2 are prepared. In the second embodiment, in the preparation for the ultrasonic measurement step ST7, the control unit is moved by the control unit while the semiconductor device 1 and the ultrasonic probe 71 held by the holding table 11 are relatively moved in the thickness direction at a predetermined interval. 100 temporarily stores all the obtained preparation reflection echoes 170-1, 170-2. That is, in the second embodiment, the control unit 100 temporarily stores the prepared reflection echoes 170-1 and 170-2 of the same number as the measurement points.

In the preparation detection step ST8, the distribution of the voltage signals 171, 172, and 173 of the respective waves in the thickness direction of the semiconductor device 1 which are to reflect the echoes 170-1 and 170-2 is decided to irradiate the ultrasonic waves in the ultrasonic measurement step ST2. Steps in the thickness direction.

In the preparation detection step ST8, in detail, first, the ultrasonic detector 113 of the ultrasonic measurement unit 110 is a preparation reflection echo 170-1, 170 obtained by the ultrasonic receiver 112 of the ultrasonic measurement unit 110. -2. The intensity of the interface wave voltage signal 173 in the gate is measured. The gate is set within a predetermined range including the time for detecting the interface wave voltage signal 173. In the preparation detection step ST8, the intensity information of the voltage signal 173 of the interface wave in the gate is obtained as measurement data.

In the preparation detection step ST8, the ultrasonic measurement unit 110 extracts the intensity of the voltage signal 173 of the interface signal of each of the prepared reflection echoes 170-1 and 170-2 measured by the ultrasonic detector 113, and has the largest intensity. The voltage signal 173 of the interfacial wave is prepared to reflect the echoes 170-1 and 170-2. In the preparation detection step ST8, the ultrasonic measurement unit 110 calculates the Z-axis direction of the ultrasonic probe 71 when the voltage signal 173 of the interface wave having the maximum intensity is measured to prepare the reflected echoes 170-1 and 170-2. position. The position of the Z-axis direction of the ultrasonic probe 71 calculated by the ultrasonic measurement unit 110 here is such that the focal point of the ultrasonic wave 140 irradiated by the ultrasonic probe 71 is set on the boundary surface between the resin 4 and the element wafer 3 or Its nearby location. In the preparation detection step ST8, the ultrasonic measurement unit 110 determines the position of the calculated Z-axis direction of the ultrasonic probe 71 as the ultrasonic probe 71 that irradiates the ultrasonic wave in the ultrasonic measurement step ST2. position.

The voltage signal 173 of the boundary wave becomes the position in the Z axis direction of the front end portion of the extremely large ultrasonic probe 71, and is more than the position of the Z axis direction of the front end portion of the voltage signal 171 of the extremely large ultrasonic probe 71. To the lower side of the Z-axis direction. Further, the voltage signal 173 of the boundary wave becomes the position in the Z-axis direction of the tip portion of the ultrasonic probe 71 which is extremely larger than the position where the tip portion of the ultrasound probe 71 is closer to the lower side in the Z-axis direction to the limit position. Upper side in the Z-axis direction. Therefore, in the preparation detection step ST8, in the range of the Z-axis direction in which the tip portion of the ultrasonic probe 71 is moved in the preparation ultrasonic measurement step ST7, the voltage signal 173 of the calculated interface wave becomes a very large ultrasonic probe. The position of the Z-axis direction of the front end portion of 71 and the calculated position signal of the interface wave 173 as the maximum position of the Z-axis direction of the front end portion of the ultrasonic probe 71 are determined to be irradiated in the ultrasonic measurement step ST2 The position of the ultrasonic probe 71 of the ultrasonic wave.

The preparation detection step ST8 preferably includes a preparation image processing step ST9. In this case, the preparation image processing step ST9 is a step of converting the distribution of the voltage signals 171, 172, and 173 of each wave of the reflected echoes 170-1 and 170-2 into the preparation of image data with color information. . In this case, the preparation detection step ST8 is to determine the ultrasonic detection for irradiating the ultrasonic waves in the ultrasonic measurement step ST2 in accordance with the distribution in the thickness direction of the semiconductor device 1 which is the detection target of the color information of the image data. Step of needle 71 position.

When the preparation detection step ST8 includes a preparation image processing step ST9, in the preparation image processing step ST9, in detail, the ultrasound measurement unit 110 is acquired by the ultrasound detector 113 of the ultrasound measurement unit 110. The intensity information of the voltage signals 171, 172, and 173 of each wave, and each pixel is set to a predetermined color to produce a one-dimensional image including a plurality of colors. The foregoing pixels are voltage signals of each wave 171, 172, 172, Each pixel at a position in the thickness direction of the semiconductor device 1, that is, in the Z-axis direction, when the intensity of 173 satisfies predetermined conditions.

FIG. 14 is an explanatory diagram showing an example of preparation image data obtained in the preparation image processing step ST9 in FIG. 10. The preparation image data 180 shown in FIG. 14 is data obtained by performing the preparation image processing step ST9 on the semiconductor device 1 which is a detection target, and has pixel regions 181, 182, of each color from the upper side in the Z-axis direction to the lower side. 183, 184, 185.

The pixel region 181 is a region colored in the first color with parallel oblique lines at the lower right in the narrower interval in FIG. 14. The pixel region 181 corresponds to a region where the voltage signal 171 of the frontal wave is detected to be above a predetermined threshold value, and a position corresponding to the Z-axis direction of the focal point of the irradiated ultrasonic wave 140 becomes the detection target of the resin 4 of the semiconductor device 1. Near the front surface, that is, the area near the boundary surface between the front surface of the resin 4 and the water 79.

The pixel region 182 is a region colored parallel to the upper right in FIG. 14 with a diagonally spaced upper right, and is colored in the second color. The pixel region 182 corresponds to the following region between the region where the voltage signal 171 of the front wave is detected above the predetermined threshold and the region where the voltage signal 173 of the interface wave is detected above the predetermined threshold: the voltage of each wave The signals 171, 172, and 173 are all detected as areas that do not reach the predetermined threshold value, and the position in the Z-axis direction corresponding to the focal point of the irradiated ultrasonic wave 140 becomes the detection target, which is the ratio element in the resin 4 of the semiconductor device 1. The area inside the upper part of the wafer 3. That is, the length in the Z-axis direction of the pixel region 182, the time interval between the voltage signal 171 of the front wave and the voltage signal 173 of the interface wave, and the thickness of the upper portion of the resin 4 of the semiconductor device 1 than the element wafer 3 are Respectively.

The pixel region 183 is a region in FIG. 14 in which a narrow diagonally downward parallel right oblique line and an upper rightward parallel oblique line intersect, and is colored in a third color. The pixel region 183 corresponds to a region where the voltage signal 173 of the interface wave is detected to be above a predetermined threshold value, and the position corresponding to the Z-axis direction of the focal point of the irradiated ultrasonic wave 140 is the detection target of the resin 4 and the resin 4 of the semiconductor device 1. A region near the boundary surface of the element wafer 3.

The pixel region 184 is a region colored parallel to the lower right in FIG. 14 with a diagonally spaced lower right, and is colored in the fourth color. The pixel region 184 corresponds to the following region between the region where the voltage signal 173 of the interface wave is detected above the predetermined threshold and the region where the voltage signal 172 of the back wave is detected above the predetermined threshold: the voltage of each wave The signals 171, 172, and 173 are all detected as areas that do not reach the predetermined threshold value, and the position in the Z-axis direction corresponding to the focal point of the irradiated ultrasonic wave 140 becomes the detection target, that is, the element wafer 3 and rewiring of the semiconductor device 1. The area inside the layer 8. That is, the sum of the length in the Z-axis direction of the pixel region 184, the time interval between the voltage signal 173 of the interface wave and the voltage signal 172 of the back wave, and the total thickness of the element wafer 3 and the rewiring layer 8 of the semiconductor device 1 are the same. correspond.

Furthermore, in this embodiment, since the ultrasonic probe 71 scans in the vicinity of a region where the voltage signal 173 of the interface wave is detected to be a value clearly larger than a predetermined threshold value, it is not detected due to the element wafer. It is highly likely that the voltage signal at the boundary surface between 3 and the rewiring layer 8 is not limited to this. The voltage signal attributable to the boundary surface between the element wafer 3 and the redistribution layer 8 can also be detected and obtained. Prepare the image data. The image data are prepared by coloring the area corresponding to the element wafer 3, the area corresponding to the boundary surface of the element wafer 3 and the rewiring layer 8, and the area corresponding to the rewiring layer 8. Prepare image data into different colors.

The pixel region 185 is a region in FIG. 14 which is provided with parallel oblique lines on the upper right side with a narrow interval and is colored in the fifth color. The pixel region 185 corresponds to a region where the voltage signal 172 of the back wave is detected to be above a predetermined threshold, and the position in the Z-axis direction corresponding to the focal point of the irradiated ultrasonic wave 140 becomes the detection target, which is the rewiring layer of the semiconductor device 1. The vicinity of the rear surface of 8, that is, the area near the boundary surface between the rear surface of the redistribution layer 8 and the water 79.

Furthermore, although the pixel regions 182 and 184 are regions where the voltage signals 171, 172, and 173 of each wave are all detected as not reaching the predetermined threshold value, it is possible to read from each wave that is detected as not reaching the predetermined threshold value. The information of the intensity ratios of the voltage signals 171, 172, and 173 is separated and detected by the control unit 100, and image processing is performed with individual colors attached.

In the case where the preparation detection step ST8 includes a preparation image processing step ST9 and the preparation image data 180 is obtained in the preparation image processing step ST9, in the preparation detection step ST8, the control unit 100 first prepares the image processing step In the prepared image data 180 converted in ST9, the position in the Z-axis direction of the pixel region 183 is calculated from each pixel region of each color. In such a case, in the preparation detection step ST8, the control unit 100 positions the center position of the position in the Z-axis direction of the pixel region 183 as the position of the ultrasonic probe 71 as the focal point of the irradiated ultrasonic wave 140. The position of the ultrasonic probe 71 in the ultrasonic measurement step ST2, that is, the position of the ultrasonic probe 71 in the Z-axis direction is determined. In this manner, in the preparation detection step ST8, the position in the Z-axis direction of the most suitable ultrasonic probe 71 in the ultrasonic measurement step ST2 can be detected and set.

FIG. 15 is an explanatory diagram showing another example of the preparation image data obtained in the preparation image processing step ST9 in FIG. 10. The preparation image data 190 shown in FIG. 15 is the same as the preparation image data 180 shown in FIG. 14 described above, and is obtained by executing the preparation image processing step ST9 on the semiconductor device 1 which is the detection target, from the Z-axis direction. The upper side of is directed toward the lower side, and has pixel regions 192 and 194 of each color. The prepared image data 190 is a form in which the prepared image data 180 described above is not provided with the pixel regions 181, 183, and 185. Here, the so-called non-pixel regions 181, 183, and 185 also include the following forms: The thickness of the pixel regions 181, 183, and 185 in the Z-axis direction has been reduced to less than the ultrasonic measurement unit 110. The smallest area of the image therefore becomes a form that cannot be displayed on the image.

The pixel region 192 in the prepared image material 190 corresponds to the pixel region 182 in the prepared image material 180, and the pixel region 194 in the prepared image material 190 corresponds to the pixel region 184 in the prepared image material 180. The upper end of the pixel region 192 in the prepared image data 190 substantially corresponds to the pixel region 181 in the prepared image data 180, and the boundary between the pixel region 192 and the pixel region 194 in the prepared image data 190 substantially corresponds to The lower end of the pixel region 183 in the prepared image material 180 and the lower end of the pixel region 194 in the prepared image material 190 substantially correspond to the pixel region 185 in the prepared image material 180.

In the case where the preparation detection step ST8 includes a preparation image processing step ST9 and the preparation image data 190 is obtained in the preparation image processing step ST9, there is no pixel area in the preparation image data 190 and the pixel area in the preparation image data 180. 183 corresponds to the region, so in the preparation detection step ST8, the control unit 100 first prepares the image data 190 here, and calculates the Z axis in the boundary between the pixel region 192 and the pixel region 194 based on each pixel region of each color. Direction of position. In this case, in the preparation detection step ST8, the control unit 100 is an ultrasonic probe that sets the position in the Z-axis direction in the boundary between the pixel region 192 and the pixel region 194 as the focal point of the irradiated ultrasonic wave 140. The position of 71 is determined as the position of the ultrasonic probe 71 in the ultrasonic measurement step ST2, that is, the position of the ultrasonic probe 71 in the Z-axis direction. In this manner, in the preparation detection step ST8, the position in the Z-axis direction of the most suitable ultrasonic probe 71 in the ultrasonic measurement step ST2 can be detected and set.

The boundary wave detection determination step ST10 is to move the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8 and perform an ultrasonic measurement to determine whether the voltage signal 173 of the interface wave is sufficiently detected. Steps to Intensity. In the boundary wave detection and determination step ST10, specifically, the control unit 100 moves the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8, and performs ultrasonic measurement, whereby the interface wave When the voltage signal 173 is detected as an intensity above a predetermined threshold value, it is determined that the voltage signal 173 of the interface wave is detected as a sufficient intensity (interface wave detection determination step ST10: Yes), and the processing is performed toward the ultrasonic measurement step ST2. Go forward. Since the processes after the ultrasonic measurement step ST2 are the same as those in the first embodiment, detailed description thereof will be omitted.

On the other hand, the control unit 100 moves the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8, and performs ultrasonic measurement, whereby the voltage signal 173 of the interface wave is only detected as not reaching In the case of a predetermined threshold strength, it is determined that the voltage signal 173 of the interface wave is not detected as a sufficient strength (interface wave detection determination step ST10: No), and the ultrasonic probe 71 is moved in the horizontal direction by a predetermined distance. Then, the process returns to the ultrasonic measurement step ST7. In the interface wave detection determination step ST10, the preparation ultrasonic measurement step ST7 and the preparation detection step ST8 are repeated until the voltage signal 173 of the interface wave is detected as a sufficient intensity.

In addition, the control unit 100 may send the information of the position of the Z-axis direction of the ultrasonic probe 71 detected in the preparation image processing step ST9 and the preparation probe step ST8 to the display. Unit 130 to display it. In this case, the situation in which the position in the Z-axis direction of the ultrasonic probe 71 has been detected can be confirmed at a glance, and the determination result of the interface wave detection determination step ST10 can be confirmed at a glance.

As described above, according to the method for detecting a predetermined division line according to the second embodiment, before the implementation of the ultrasonic measurement step ST2, the semiconductor device 1 as the detection target and the ultrasonic detection functioning as an ultrasonic irradiation mechanism are further performed. The needle 71 is relatively moved in the thickness direction of the semiconductor device 1 at a predetermined interval, and the ultrasonic wave 140 is irradiated to the inside of the semiconductor device 1 which is a detection target, and measurement is made to reflect the echoes 170-1 and 170-2. The distribution of the voltage signals 171, 172, and 173 of the respective reflection echoes 170-1 and 170-2 in the thickness direction of 1 is determined to determine the ultrasonic probe 71 to irradiate the ultrasonic waves in the ultrasonic measurement step ST2. position. Therefore, the method for detecting a predetermined division line according to the second embodiment can detect and set the position in the Z-axis direction of the most suitable ultrasonic probe 71 in the ultrasonic measurement step ST2.

In addition, the method for detecting a predetermined division line in the second embodiment is to convert the prepared reflection echoes 170-1 and 170-2 into prepared image data 180 having color information, and prepare color information of the image data 180 accordingly. The position of the ultrasonic probe 71 in the ultrasonic measurement step ST2 is determined. Therefore, it can be confirmed at a glance that the position of the ultrasonic probe 71 in the ultrasonic measurement step ST2 is determined.

[Embodiment 3]
FIG. 16 is a schematic configuration diagram showing a configuration example of a predetermined division line detection device 200 used in a method for detecting a predetermined division line in the third embodiment. A method for detecting a predetermined division line according to the third embodiment of the present invention will be described with reference to the drawings. The method for detecting a predetermined division line according to the third embodiment is an operation of the detection apparatus 200 for a predetermined division line. In the description of the method for detecting a predetermined division line in the third embodiment, the same reference numerals are given to the same portions as those in the first and second embodiments, and the description is omitted.

As shown in FIG. 16, a detection device 200 for a predetermined division line includes an ultrasonic inspection unit 70, a water supply unit 80, a scanning device 230 that scans the ultrasonic inspection unit 70, and an ultrasonic measurement unit that performs ultrasonic measurement using the ultrasonic inspection unit 70. Acoustic measurement device 240, control device 260 that controls each part of detection device 200 for dividing a predetermined line, driving device 270 that drives scanning device 230, and image processing device 280 that performs image processing based on measurement data obtained by ultrasonic measurement And a display unit 130 that displays an image that has undergone image processing.

The ultrasonic measurement device 240 includes an ultrasonic pulser 111, an ultrasonic receiver 112, and an ultrasonic detection unit in the same manner as the ultrasonic measurement unit 110 in the detection device 90 for dividing a predetermined line used in the first and second embodiments. Since the detector 113 is a device having the same function as the ultrasonic measurement unit 110 in the detection device 90 for dividing a predetermined line used in the first and second embodiments, detailed description thereof is omitted. The image processing device 280 is a device in charge of the same functions as the image processing unit 120 in the detection device 90 for dividing a predetermined line used in the first and second embodiments, and thus detailed description thereof is omitted. Since the ultrasonic measurement device 240, the control device 260, and the image processing device 280 are combined, the control unit 100 in the detection device 90 of the predetermined division line used in the first and second embodiments is a device having the same functions, Therefore, its detailed description is omitted.

The scanning device 230 and the driving device 270 are the holding table 11, the X-axis moving unit 30, the Y-axis moving unit 40, and the Z-axis moving unit 50 in the detection device 90 for dividing a predetermined line used in the first and second embodiments. Responsible for the same function. As shown in FIG. 16, the scanning device 230 is a device that functions as an ultrasonic scanning mechanism, and includes a sample stage 234, a pair of pillars 235, a 3-axis scanner 236, and a holding stage 237. The ultrasonic scanning mechanism is The ultrasonic probe 71 for ultrasonic measurement is scanned in the X-axis direction, the Y-axis direction, and the Z-axis direction.

The sample stage 234 is a stage for mounting the semiconductor device 1 as a detection target. As shown in FIG. 16, a pair of pillars 235 are erected on the sample table 234 and support the 3-axis scanner 236.

As shown in FIG. 16, the three-axis scanner 236 includes an X-axis direction guide 236-1 provided in parallel to the X-axis direction, a Y-axis direction guide 236-2 provided in parallel to the Y-axis direction, and parallel to Z-axis direction guide 236-3 in the Z-axis direction. The 3-axis scanner 236 is provided on a pair of pillars 235 with both ends of the X-axis direction guide 236-1 and is supported.

As shown in FIG. 16, the 3-axis scanner 236 is provided with an upper end in the Z-axis direction of the ultrasonic probe 71 at the lower end in the Z-axis direction of the Z-axis direction guide 236-3. The three-axis scanner 236 supports the ultrasonic probe 71 so that it can move along the X-axis direction guide 236-1, the Y-axis direction guide 236-2, and the Z-axis direction guide 236-3 in the X-axis direction and the Y-axis direction. , And Z axis. The three-axis scanner 236 is electrically connected to the driving device 270 and can receive the driving force from the driving device 270 to move the ultrasonic probe 71 in the X-axis direction, the Y-axis direction, and the Z-axis direction.

As shown in FIG. 16, the holding table 237 is provided on the upper side in the Z-axis direction of the sample table 234. The holding stage 237 is connected to a vacuum suction source (not shown), and is attracted by the vacuum suction source, and attracts and holds the semiconductor device 1 as a detection object on the upper surface in the Z-axis direction. In addition, a plurality of clamp portions (not shown) are provided around the holding table 237. The clamp portions are driven by an air actuator (not shown) to sandwich the periphery of the semiconductor device 1 which is a detection target. Area 6. In the third embodiment, the holding stage 237 holds the semiconductor device 1 as a detection target such that each direction in which a plurality of element wafers 3 are arranged in a two-dimensional arrangement is along the X-axis direction and the Y-axis direction, respectively.

The control device 260 controls the position of the ultrasonic probe 71 by controlling the driving device 270. The control device 260 controls the scanning of the ultrasonic probe 71 in the X-axis direction and the Y-axis direction by controlling the driving device 270. The control device 260 controls the movement of the ultrasonic probe 71 in the Z-axis direction by controlling the driving device 270.

The driving device 270 operates a motor of each axis built in the three-axis scanner 236. The drive device 270 scans and moves the ultrasonic probe 71 along the upper surface in the Z-axis direction of the semiconductor device 1 which is the detection target.

Next, a method for detecting a predetermined division line according to the third embodiment will be described. The method for detecting a predetermined division line according to the third embodiment is an operation of the detection apparatus 200 for a predetermined division line. FIG. 17 is a flowchart of an example of a method for detecting a predetermined division line according to the third embodiment. FIG. 18 is a flowchart of another example of a method for detecting a planned division line in the third embodiment.

As shown in FIG. 17, an example of a method for detecting a predetermined division line according to the third embodiment includes a holding step ST1, an ultrasonic measurement step ST2, and a detection step ST3. The detection step ST3 includes an image processing step ST4. The method for detecting a predetermined division line in the third embodiment is a method of omitting the calibration step ST5 and the cutting step ST6 in the method for detecting the predetermined division line in the first embodiment.

As shown in FIG. 18, another example of the method for detecting a predetermined division line according to the third embodiment is in addition to the holding step ST1, the ultrasonic measurement step ST2, and the detection step ST3, and before the ultrasonic measurement step ST2 and the detection step ST3, It further includes a preparation ultrasonic measurement step ST7, a preparation detection step ST8, and an interface wave detection determination step ST10. The detection step ST3 includes an image processing step ST4. The preparation detection step ST8 includes a preparation image processing step ST9. The method for detecting a predetermined division line in the third embodiment is a method in which the calibration step ST5 and the cutting step ST6 are omitted in the method for detecting the predetermined division line in the second embodiment.

As described above, according to the method for detecting a predetermined dividing line in the third embodiment, the same functions and effects as those of the method for detecting a predetermined dividing line in the first embodiment and the second embodiment can be exhibited by excluding the parts related to the calibration step ST5 and the cutting step ST6. .

In addition, since the method for detecting a planned division line according to the third embodiment uses a detection device 200 that does not include a planned division line for the cutting unit 20, it is also possible to easily perform the case where the semiconductor device 1 as a detection target is not required to be cut. And properly implemented.

[Modification 1]
FIG. 19 is a front view showing an example of a semiconductor device 301 as an object of a method for detecting a predetermined division line according to a first modification of the first to third embodiments. FIG. 20 is a XX-XX cross-sectional view in the semiconductor device 301 of FIG. 19. A method for detecting a predetermined division line according to the first embodiment to the third modification of the third embodiment will be described with reference to the drawings. The method for detecting a planned division line in Modification 1 of Embodiments 1 to 3 of the present invention is a method for detecting a planned division line in each of Embodiments 1 to 3 of the present invention. The target of the detection method is changed from the semiconductor device 1 to the method of the semiconductor device 301. In the description of the method for detecting a predetermined division line according to the first modification of the first embodiment to the third embodiment, the same reference numerals are given to the same portions as those in the first to third embodiments, and description thereof will be omitted.

As shown in FIGS. 19 and 20, the semiconductor device 301 is a package substrate shape, that is, a rectangular plate shape, and has a plurality of element wafers 3, a resin 4, a predetermined division line 5, a remaining peripheral area 6, a solder bump 303, The package substrate 304 and the solder balls 305. Since the plurality of element wafers 3, the resin 4, the planned division line 5, and the remaining peripheral area 6 in the semiconductor device 301 are the same as those in the semiconductor device 1, detailed descriptions thereof are omitted.

The semiconductor device 301 shown in FIG. 19 and FIG. 20 is manufactured by, for example, arranging the element wafer 3 obtained by dividing a predetermined wafer through a solder bump 303 and arranging it on a package substrate 304 and sealing it with a resin 4.

As shown in FIG. 20, the solder bump 303 is disposed on the back side of the element wafer 3, that is, the side opposite to the side of the element wafer 3 that covers the resin 4. The solder bump 303 is electrically conductively connected between the element wafer 3 and the package substrate 304 on which the element wafer 3 is placed.

As shown in FIG. 20, the package substrate 304 is disposed on the back side of the solder bump 303, that is, the opposite side of the solder bump 303 on which the element wafer 3 is provided. The package substrate 304 is on the front side, and the element wafer 3 is placed with a solder bump 303 therebetween. The package substrate 304 is provided in common to the plurality of element wafers 3 and the planned division lines 5. The package substrate 304 is a substrate provided with a circuit therein, and the circuit is an electrical connection between the element wafer 3 and a printed wiring board on which the element wafer 3 is mounted.

As shown in FIG. 20, the solder balls 305 are plurally and uniformly arranged on the back side of the package substrate 304, that is, the opposite side of the package substrate 304 on which the component wafer 3 is arranged. The solder ball 305 is used to electrically connect the package substrate 304 and the printed wiring substrate after the semiconductor device 301 is divided for each element wafer 3.

The semiconductor device 301 is divided for each element wafer 3 along a predetermined division line 5 to be divided into individual package elements 307 shown in FIGS. 19 and 20. The package element 307 includes a package substrate 304 on which solder balls 305 are arranged, one element wafer 3 assembled on the package substrate 304, and a resin 4 on which the element wafer 3 is sealed. In Modification 1, the package element 307 is a WLCSP (Wafer Level Chip Size Package), that is, a part of a single element wafer 3 without internal wiring by bonding wires is not performed. A form of packaging that remains exposed to become the smallest semiconductor component. The WLCSP package element 307 has the same package area and the horizontal area of the element wafer 3, and thus can be completed with a small occupied area when the single element wafer 3 is front-mounted on a printed circuit board.

Next, a method for detecting a predetermined division line according to the first to third modifications of the third embodiment will be described. FIG. 21 is an explanatory diagram showing an example of the image data 315 obtained in the image processing step ST4 of the method for detecting a predetermined division line in the first modification to the third embodiment. The method for detecting a predetermined division line in Modification 1 of Embodiments 1 to 3 of the present invention is to process an image in the method for detecting a predetermined division line in each of Embodiments 1 to 3 of the present invention. The image data obtained in step ST4 is changed to the image data 315.

The image data 315 shown in FIG. 21 is data obtained by performing the image processing step ST4 on the semiconductor device 301 as a detection target, and has a pixel region 317 of a first color and a pixel region 318 of a second color.

As shown in FIG. 21, the pixel region 317 of the first color in the image data 315 corresponds to a region where the element wafer 3 is arranged. As shown in FIG. 21, the pixel region 318 of the second color in the image data 315 corresponds to a region where the element wafer 3 is not arranged, that is, a predetermined division line 5 and a remaining area 6 on the periphery.

As described above, according to the method for detecting a planned division line according to Modification 1 of Embodiments 1 to 3, since the method for detecting a planned division line of each of Embodiments 1 to 3 is used to detect the planned division line The object of the line detection method is changed to the semiconductor device 301, and the image data obtained in the image processing step ST4 is changed to the image data 315. Therefore, each of Embodiments 1 to 3 can be used. The detection method of the predetermined division line has the same effect.

[Modification 2]
FIG. 22 is a front view showing an example of a semiconductor device 331 as a target of a method for detecting a predetermined division line according to the second modification of the first to third embodiments. FIG. 23 is a XXIII-XXIII sectional view in the semiconductor device 331 of FIG. 22. A method for detecting a predetermined division line according to the first embodiment to the third modification of the third embodiment will be described with reference to the drawings. In the method for detecting a planned division line in each of the first to third embodiments of the present invention, the method for detecting a planned division line in each of the first to third embodiments of the present invention detects the planned division line. The target of the detection method is changed from the semiconductor device 1 to the method of the semiconductor device 331. In the description of the method for detecting a predetermined division line according to Modification 2 of Embodiments 1 to 3, the same portions as those of Embodiments 1 to 3 are denoted by the same reference numerals, and descriptions thereof will be omitted.

As shown in FIGS. 22 and 23, the semiconductor device 331 has a wafer shape, that is, a circular plate shape, and has a plurality of element wafers 3, a resin 4, a predetermined division line 5, a remaining peripheral area 6, a groove 332, and Bump 333. Since the plurality of element wafers 3, the resin 4, the planned division line 5, and the remaining peripheral area 6 in the semiconductor device 331 are the same as those in the semiconductor device 1, detailed descriptions thereof are omitted.

The semiconductor device 331 shown in FIGS. 22 and 23 is a form of packaging of a semiconductor component, and is manufactured by a method in which a wafer serving as a basis for a plurality of element wafers 3 is divided along a predetermined division line 5 A half cut groove which is the basis of the groove 332 is formed, and the half cut groove is covered with resin 4 from the front side to be sealed and buried, and the back side is polished to form the half cut groove formed on two adjacent element wafers 3 Between the grooves 332.

The groove 332 is provided along the planned division line 5, and the resin 4 is embedded therein. The bump 333 is provided so as to protrude through the resin 4 on the front surface of the element wafer 3. The semiconductor device 331 divides the resin 4 in the groove 332 for each element wafer 3 along the planned division line 5 to divide the resin 4 into the package elements 337 shown in FIG. 23.

Next, a method for detecting a predetermined division line according to the first to third modification examples 2 of the present invention will be described. The method for detecting a predetermined division line of the first to third modification examples 2 of the present invention is compared with the method for detecting the predetermined division line of each of the embodiments 1 to 3 of the present invention, except that In the ultrasonic measurement step ST2 and the preparation of the ultrasonic measurement in the ultrasonic measurement step ST7, the bumps 333 may have a slight effect, but the same is about the same.

As described above, according to the method for detecting a predetermined division line in Modification 2 of Embodiments 1 to 3, since the method for detecting a predetermined division line in each of Embodiments 1 to 3 is compared, except that In the ultrasonic measurement step ST2 and the preparation of the ultrasonic measurement in the ultrasonic measurement step ST7, the bumps 333 may be slightly affected except for the possibility that the bumps 333 may be slightly affected. Therefore, they can be implemented as in the first to third embodiments. The method for detecting a predetermined division line of each embodiment has the same effect.

In addition, according to the foregoing first, second, and third embodiments, and the methods of detecting the planned division lines of the first and second modification examples of each embodiment, the following detection apparatus for the planned division line can be obtained.
(Supplementary note 1)
A detection device for a planned division line is a detection device for detecting a planned division line. The division planned line is a division plan for singulating a semiconductor device having a plurality of element wafers sealed in a resin for each of the element wafers. The detection device for the planned division line is characterized by:
A holding table holding the semiconductor device;
The ultrasonic measurement mechanism moves the semiconductor device held by the holding table and the ultrasonic irradiation mechanism in a horizontal direction relative to each other at a predetermined interval, irradiates the ultrasonic wave to a predetermined thickness portion of the semiconductor device, and measures a reflected echo ; And a control mechanism that controls each part of the ultrasonic measurement mechanism,
The control mechanism detects the predetermined division line from the distribution of the reflected echo.
(Supplementary note 2)
The detection device for a predetermined division line as described in Supplementary Note 1, wherein before the ultrasonic measurement mechanism measures the reflected echo,
While the semiconductor device and the ultrasonic irradiation mechanism are relatively moved at a predetermined interval in the thickness direction of the semiconductor device, the inside of the semiconductor device is irradiated with an ultrasonic wave, and measurement is prepared to reflect an echo,
Before the control mechanism measures the reflected echo,
From the distribution in the thickness direction of the semiconductor device that is ready to reflect the echo, the position at which the ultrasonic wave is irradiated when the reflected echo is measured is determined.
(Supplementary note 3)
A dicing device is a dicing device for singulating a semiconductor device having a plurality of element wafers sealed in a resin for each of the element wafers. The dicing device includes:
A holding table holding the semiconductor device;
A cutting unit that cuts the semiconductor device held by the holding table;
The ultrasonic measurement mechanism moves the semiconductor device held by the holding table and the ultrasonic irradiation mechanism in a horizontal direction relative to each other at a predetermined interval, irradiates the ultrasonic wave to a predetermined thickness portion of the semiconductor device, and measures a reflected echo ; And a control agency that controls the constituent elements,
The control mechanism detects the predetermined division line from the distribution of the reflected echo.

The detection device and cutting device for the predetermined division line are the same as the detection method for the predetermined division line in the first embodiment and the second embodiment, and the ultrasonic detection is performed while the semiconductor device serving as the detection target and the ultrasonic irradiation mechanism function. The needle moves relatively in the horizontal direction at predetermined intervals, irradiates ultrasonic waves to a predetermined thickness portion of the semiconductor device, which is a detection target, and measures reflected echoes, and then detects a predetermined division line based on the distribution of the reflected echoes. Therefore, the detection device for the planned division line does not need to perform processing for detecting the planned division line, so that it is possible to reduce the possibility that the cutting chips accompanying the processing adhere to the element wafer.

The present invention is not limited to the embodiments described above. That is, various modifications can be implemented without departing from the gist of the present invention.

1,301,331‧‧‧semiconductor device

3‧‧‧component chip

4‧‧‧ resin

5‧‧‧ divided scheduled line

6‧‧‧ remaining area

7, 307, 337‧‧‧ Package components

8‧‧‧ rewiring layer

9,305‧‧‧solder ball

10‧‧‧ cutting device

11,237‧‧‧holding table

12‧‧‧ keep face

13‧‧‧Rotary drive source

20‧‧‧ cutting unit

21‧‧‧ cutting blade

22‧‧‧ Spindle

23‧‧‧ Spindle housing

30‧‧‧X-axis moving unit

31, 41, 51‧‧‧ Ball Screw

32, 42, 52‧‧‧pulse motors

33, 43, 53‧‧‧ rail

34‧‧‧X-direction position detection unit

35, 45‧‧‧ linear scale

36, 46‧‧‧Read head

40‧‧‧Y-axis moving unit

44‧‧‧Y-direction position detection unit

50‧‧‧Z axis moving unit

54‧‧‧Z-direction position detection unit

60‧‧‧shooting unit

70‧‧‧ Ultrasonic Inspection Unit

71‧‧‧ Ultrasonic Probe

71-1, 71-2, 71-3‧‧‧ position

72‧‧‧ Fixture

73‧‧‧ Water Supply Road

78‧‧‧ space

79‧‧‧ water

80‧‧‧ water supply unit

Detection device for 90, 200‧‧‧ divided scheduled lines

100‧‧‧control unit

110‧‧‧ Ultrasonic Measurement Department

111‧‧‧ Ultrasonic Pulser

112‧‧‧ Ultrasonic Receiver

113‧‧‧ Ultrasonic Detector

120‧‧‧Image Processing Department

130‧‧‧display unit

140, 140-1, 140-2, 140-3‧‧‧ Ultrasonic

150-1, 150-2, 150-3‧‧‧Reflected echo

151, 152, 153, 171, 172, 173‧‧‧ voltage signals

155, 315‧‧‧Image data

157, 158, 181, 182, 183, 184, 185, 192, 194, 317, 318‧‧‧ pixel areas

160-1, 160-2‧‧‧ points

170-1, 170-2 ‧‧‧ ready to reflect echo

180, 190‧‧‧ Prepare image data

230‧‧‧scanning device

234‧‧‧ sample table

235‧‧‧ Pillar

236‧‧‧3 axis scanner

236-1‧‧‧X-axis guide

236-2‧‧‧Y-axis guide

236-3‧‧‧Z-axis guide

240‧‧‧ Ultrasonic measuring device

260‧‧‧Control device

270‧‧‧Drive

280‧‧‧Image processing device

303‧‧‧solder bump

304‧‧‧ package substrate

332‧‧‧ditch

333‧‧‧ bump

d‧‧‧distance

ST1‧‧‧Holding steps

ST2‧‧‧ Ultrasonic Measurement Procedure

ST3‧‧‧Test steps

ST4‧‧‧Image processing steps

ST5‧‧‧calibration steps

ST6‧‧‧Cutting steps

ST7‧‧‧Preparation of ultrasonic measurement procedure

ST8‧‧‧Preparing for testing steps

ST9‧‧‧ Preparing image processing steps

ST10‧‧‧Interface wave detection and judgment steps

X, Y, Z‧‧‧ directions

FIG. 1 is a front view showing an example of a semiconductor device as a target of a method for detecting a predetermined division line according to the first embodiment.

FIG. 2 is a cross-sectional view taken along the line II-II in the semiconductor device of FIG. 1.

3 is a perspective view showing an example of a configuration of a cutting device including a planned dividing line detection device used in a method for detecting a planned dividing line in the first embodiment.

4 is a cross-sectional view taken along the line IV-IV in the ultrasonic inspection unit included in the cutting device of FIG. 3.

FIG. 5 is a flowchart of a method for detecting a predetermined division line according to the first embodiment.

FIG. 6 is an explanatory diagram illustrating an ultrasonic measurement procedure of FIG. 5.

FIG. 7 is an explanatory diagram showing an example of a reflected echo measured in the ultrasonic measurement step of FIG. 5.

FIG. 8 is an explanatory diagram showing another example of the reflected echo measured in the ultrasonic measurement step of FIG. 5.

FIG. 9 is an explanatory diagram showing an example of image data obtained in the image processing step of FIG. 5.

FIG. 10 is a flowchart of a method for detecting a predetermined division line according to the second embodiment.

FIG. 11 is an explanatory diagram illustrating a preparation ultrasonic measurement procedure of FIG. 10.

FIG. 12 is an explanatory diagram showing an example of the prepared reflected echo measured in the prepared ultrasonic measurement step of FIG. 10.

FIG. 13 is an explanatory diagram showing another example of the preparation reflection echo measured in the preparation ultrasonic measurement step of FIG. 10.

FIG. 14 is an explanatory diagram showing an example of preparation image data obtained in the preparation image processing step of FIG. 10.

FIG. 15 is an explanatory diagram showing another example of preparation image data obtained in the preparation image processing step of FIG. 10.

FIG. 16 is a schematic configuration diagram showing a configuration example of a detection device for a predetermined division line used in a method for detecting a predetermined division line in Embodiment 3. FIG.

FIG. 17 is a flowchart of an example of a method for detecting a predetermined division line according to the third embodiment.

18 is a flowchart of another example of a method for detecting a predetermined division line according to the third embodiment.

FIG. 19 is a front view showing an example of a semiconductor device as an object of a method for detecting a planned division line according to a first modification of the first to third embodiments.

20 is a cross-sectional view taken along the line XX-XX in the semiconductor device of FIG. 19.

FIG. 21 is an explanatory diagram showing an example of image data obtained in an image processing step of a method for detecting a predetermined division line according to the first modification to the third embodiment;

22 is a front view showing an example of a semiconductor device as an object of a method for detecting a predetermined division line according to a second modification of the first to third embodiments.

FIG. 23 is a XXIII-XXIII cross-sectional view in the semiconductor device of FIG. 22.

Claims (4)

  1. A method for detecting a predetermined division line is a detection method for detecting a predetermined division line. The predetermined division line is a division plan for singulating a semiconductor device having a plurality of element wafers sealed in resin. The method for detecting a predetermined division line includes: A holding step of holding the semiconductor device on a holding table; The ultrasonic measurement step irradiates an ultrasonic wave to a predetermined thickness portion of the semiconductor device while relatively moving the semiconductor device and the ultrasonic irradiation mechanism held by the holding table in a horizontal direction at a predetermined interval, and measures the reflected echo. ;and The detecting step detects the predetermined division line from the distribution of the reflected echo.
  2. For example, the method for detecting a predetermined division line of claim 1, wherein the detecting step further includes: An image processing step, converting the reflected echo into image data with color information, And, the predetermined division line is detected according to the color information of the image data.
  3. For example, the method for detecting a predetermined division line of claim 1 or 2, before the implementation of the ultrasonic measurement step, the method includes: Preparing an ultrasonic measurement step, irradiating an ultrasonic wave to the inside of the semiconductor device while relatively moving the semiconductor device and the ultrasonic irradiation mechanism in a thickness direction of the semiconductor device at a predetermined interval, and measuring preparation for reflecting an echo; and A detection step is prepared, and the position of the ultrasonic wave in the ultrasonic measurement step is determined from the distribution in the thickness direction of the semiconductor device that is to reflect the echo.
  4. For example, the method for detecting a predetermined division line of claim 3, wherein the step of preparing for detection further includes: A preparation image processing step, converting the preparation reflection echo into preparation image data with color information, Furthermore, the position of the ultrasonic wave in the ultrasonic measurement step is determined in accordance with the color information of the prepared image data.
TW108103500A 2018-02-05 2019-01-30 Method for detecting a predetermined dividing line can reduce the possibility of attaching the wafer with debris accompanying the processing TW201935537A (en)

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