KR102650509B1 - Organic light emitting diode display device and fabricating method of the same - Google Patents

Abstract

The present invention discloses an organic electroluminescent display device and a method of manufacturing the same. The organic electroluminescent display device of the disclosed invention is disposed on a substrate including a display area and a non-display area, a display area, a semiconductor layer, a gate electrode, a thin film transistor including a source electrode and a drain electrode, and a thin film transistor. An organic light-emitting element including a first electrode, an organic light-emitting layer, and a second electrode, and a pad portion including a pad electrode disposed on a non-display area, wherein the gate electrode and the pad electrode are made of aluminum (Al) and tungsten, respectively. (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), moly titanium (MoTi), and any one selected from the group consisting of combinations thereof. Includes.

Description

Organic electroluminescent display device and manufacturing method thereof {Organic light emitting diode display device and fabricating method of the same}

The present invention relates to an organic electroluminescent display device and a manufacturing method thereof, and more specifically, to an organic electroluminescent display device with improved reliability and a manufacturing method thereof.

Recently, as we entered the full-fledged information age, the display field that visually expresses electrical information signals has developed rapidly, and in response to this, various flat panel display devices (flat display devices) with excellent performance such as thinness, lightness, and low power consumption have been developed. Flat Display Device (Flat Display Device) has been developed and is rapidly replacing the existing cathode ray tube (CRT).

Specific examples of such flat panel displays include Liquid Crystal Display devices (LCD), Organic Light Emitting Displays (OLED), Electrophoretic Displays (EPD, Electric Paper Display), Plasma Display Panel device (PDP), Field Emission Display device (FED), Electro luminescence Display Device (ELD), and Electro-Wetting Display (EWD) etc. can be mentioned. They commonly have a flat display panel that implements images as an essential component, and the flat display panel includes a pair of substrates bonded face to face with a unique light emitting material or polarizing material layer in between.

One of these flat panel displays, an organic light emitting diode display device, contains organic light emitting devices that are self-luminous devices, and therefore does not require a separate light source used in liquid crystal displays that are non-light emitting devices. Lightweight and thin design is possible. In addition, it has superior viewing angle and contrast ratio compared to liquid crystal displays, is advantageous in terms of power consumption, can be driven at low direct current voltage, has a fast response speed, is strong against external shocks because the internal components are solid, and has a wide operating temperature range. It has advantages.

This organic light emitting display device is divided into a display area and a non-display area outside the display area. A thin film transistor and an organic electroluminescent element are formed in the display area. Additionally, the non-display area is provided with a pad portion including a pad electrode for applying a signal voltage from an external power source to the thin film transistor and the organic electroluminescent device. Here, the thin film transistor and the organic electroluminescent device are electrically connected to each other through the pad portion and a plurality of wiring lines.

The pad electrode of the pad portion formed in the non-display area may be exposed to the outside to be connected to the driver. At this time, corrosion of the pad electrode may occur due to external moisture and oxygen. If the pad electrode is corroded, signal transmission may not be smooth and reliability may be a problem.

In addition, this organic light emitting display device does not have a problem in a small area, but when it is formed in a large area, it cannot maintain uniform luminance and a luminance difference occurs between the outer area and the center area. More specifically, when current flows between the outer region and the central region from the upper electrode of the organic light emitting device, the current reaches a long distance from where it flows. At this time, a voltage drop occurs due to the resistance of the upper electrode of the organic light emitting device, resulting in a luminance difference between the outer portion and the center portion.

That is, in the case of a large-area conventional organic light emitting display device, the brightness uniformity is rapidly reduced due to the difference in brightness between the outer and central parts due to the resistance of the upper electrode of the organic light emitting element, and a means to compensate for the brightness difference is required. .

In the present invention, the externally exposed pad electrode is formed of a plurality of pad electrode layers, disposed on the uppermost side, and the externally exposed pad electrode layer is made of a material that does not corrode due to oxygen and moisture, thereby preventing corrosion and migration of the pad electrode. The purpose is to provide an organic electroluminescent display device and a method of manufacturing the same that can prevent this from occurring and prevent signal transmission defects.

Another object of the present invention is to provide an organic light emitting display device and a manufacturing method thereof that simplify the process required to form a plurality of pad electrode layers and reduce manufacturing costs.

In addition, the present invention is an organic electroluminescent display device that includes an auxiliary electrode connected to the second electrode of the organic light emitting device, thereby reducing the resistance of the second electrode and reducing the voltage drop, so that current can be transmitted uniformly throughout the entire area. Another purpose is to provide a method for manufacturing the same.

The organic electroluminescent display device of the present invention to solve the problems of the prior art as described above includes a substrate divided into a display area and a non-display area; a thin film transistor disposed on the display area and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode; an organic light emitting device disposed on the thin film transistor and including a first electrode, an organic light emitting layer, and a second electrode; an auxiliary electrode connected to the second electrode of the organic light emitting device; and a pad portion disposed on the non-display area and including a pad electrode, wherein the auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode, and the second auxiliary electrode is a top surface of the first auxiliary electrode. And it is characterized by being formed surrounding the side.

In addition, the method of manufacturing an organic light emitting display device of the present invention includes the steps of forming a thin film transistor in the display area and forming a pad electrode in the non-display area on a substrate divided into a display area and a non-display area; forming a protective film on the thin film transistor and the pad electrode; forming a planarization film on the protective film in the display area; forming a first auxiliary electrode and a connection electrode on the planarization film in the display area and forming a protective electrode on the protective film in the non-display area; And forming a second auxiliary electrode on the first auxiliary electrode and forming a first organic light emitting device electrode on the connection electrode.

The organic electroluminescent display device and method of manufacturing the same according to the present invention have an externally exposed pad electrode formed of a plurality of pad electrode layers, disposed on the uppermost side, and an externally exposed pad electrode layer that is not corroded by oxygen and moisture. By forming it with a material, there is a first effect of preventing corrosion and migration of the pad electrode and preventing signal transmission defects.

In addition, the organic electroluminescent display device and its manufacturing method according to the present invention have the second effect of simplifying the process required to form a plurality of pad electrode layers and reducing manufacturing costs.

In addition, the organic electroluminescent display device and its manufacturing method according to the present invention include an auxiliary electrode connected to the second electrode of the organic light emitting device to reduce the resistance of the second electrode and reduce the voltage drop to provide uniformity in the entire area. There is a third effect through which current can be transmitted.

1 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.
Figure 2 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.
Figure 3 is a cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.
Figure 4 is a cross-sectional view of an organic light emitting display device according to a fourth embodiment of the present invention.
Figure 5 is a cross-sectional view of an organic light emitting display device according to a fifth embodiment of the present invention.
Figure 6 is a cross-sectional view of an organic light emitting display device according to a sixth embodiment of the present invention.
7A to 7E are diagrams showing a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention.
8A to 8E are diagrams showing a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. These embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative, and the present invention is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the plural is included unless specifically stated otherwise.

When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used.

In the case of a description of a temporal relationship, for example, if a temporal relationship is described as 'after', 'successfully after', 'after', 'before', etc., 'immediately' or 'directly' Unless used, non-consecutive cases may also be included.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be combined or combined with each other, partially or entirely, and various technological interconnections and operations are possible, and each embodiment can be implemented independently of each other or together in a related relationship. It may be possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The embodiments introduced below are provided as examples so that the idea of the present invention can be sufficiently conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And in the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals refer to like elements throughout the specification.

First, with reference to FIG. 1, an organic light emitting display device according to the first embodiment will be described. 1 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

Referring to FIG. 1, the organic electroluminescent display device according to the first embodiment of the present invention includes a substrate 100 divided into a display area (Active Area; AA) and a non-display area (Inactive Area; IA). The substrate 100 may be an insulating substrate. At this time, the substrate 100 may include silicon (Si), glass, plastic, or polyimide (PI). However, the material is not limited to this, and any material that can support multiple layers and devices formed on the substrate 100 is sufficient.

A thin film transistor (Tr) and an organic light emitting device (OL) electrically connected to the thin film transistor (Tr) may be disposed in the display area (AA) of the substrate 100. Additionally, a pad portion may be disposed in the non-display area (IA) of the substrate 100. The pad portion may include one pad portion 640. However, the pad portion is not limited to the drawings and may further include a plurality of pad portions.

In detail, a gate line is formed in one direction on the substrate 100, and a data line is formed in a direction different from the one direction. The gate line and the data line may intersect each other to define a pixel area in the display area AA. A thin film transistor (Tr) is formed in the intersection area of the gate line and the data line. Additionally, an organic light emitting device (OL) electrically connected to the thin film transistor (Tr) is formed in the pixel area.

The thin film transistor (Tr) includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 313 branched from the gate line, a source electrode 315 branched from the data line, and the source electrode 315. ) and a drain electrode 316 formed to be spaced apart from each other on the same layer.

The organic light emitting device (OL) includes a first electrode 130, a second electrode 136 formed opposite the first electrode 130, and a space between the first electrode 130 and the second electrode 136. It may include an organic light-emitting layer 135 formed in .

In the pad unit 140, the pad electrode 641 must be exposed to the outside in order to be connected to the driving unit later. Pad electrodes made of copper (Cu), etc. have low resistance and are advantageous for signal transmission. However, when pad electrodes made of copper (Cu), etc. are exposed to the outside, corrosion may occur due to contact with oxygen and moisture. This corrosion causes poor signal transmission and reduces the reliability of the organic light emitting display device. In addition, there is a problem in that the pad electrode formed of copper (Cu) or the like is etched together with the formation of the first electrode 130 in the process of forming the organic light emitting device (OL) later.

To solve this problem, the pad portion 640 of the organic electroluminescent display device according to the first embodiment of the present invention includes a pad electrode 641, and the pad electrode 641 overlaps with the area exposed to the outside. It further includes a protective electrode 741 disposed.

In more detail, a semiconductor layer 111 is formed on the substrate 100 in the display area AA. The semiconductor layer 111 may include a source region 111a, a channel region 111b, and a drain region 111c. A gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed on the entire surface of the substrate 100 on which the semiconductor layer 111 is formed.

The gate line, gate electrode 313, and pad electrode 641 may be disposed on the gate insulating layer 120. The gate electrode 313 may be formed to overlap the semiconductor layer 111 in the display area AA. Additionally, the pad electrode 641 may be formed in the non-display area (IA).

The gate line, gate electrode 313, and pad electrode 641 may be formed of the same material. At this time, the gate line and the gate electrode 313 may be formed integrally.

The gate line, gate electrode 313, and pad electrode 641 may be formed as a multi-layer formed of two or more layers. That is, the gate electrode 313 may be composed of a first gate electrode 313a and a second gate electrode 313b disposed on the first gate electrode 313a. Additionally, the pad electrode 641 may be composed of the first pad electrode layer 641a and a second pad electrode layer 641b disposed on the first pad electrode layer 641a.

The gate line, gate electrode 313, and pad electrode 641 are made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum (Ta). , titanium (Ti), moly titanium (MoTi), and combinations thereof.

An interlayer insulating film 121 may be formed on the gate line, gate electrode 313, and pad electrode 641. The interlayer insulating film 121 may include multiple contact holes.

In the display area AA, the interlayer insulating layer 121 and the gate insulating layer 120 may include a contact hole exposing the semiconductor layer 111. The contact hole may expose the source region 111a and drain region 111c of the semiconductor layer 111. In the non-display area (IA), the interlayer insulating layer 121 may include a contact hole exposing the pad electrode 641.

The data line, the source electrode 315, the drain electrode 316, and the protective electrode 741 may be disposed on the interlayer insulating film 121 including the plurality of contact holes. Additionally, the data line may be arranged to extend in a different direction from the gate line. The source electrode 315 and the drain electrode 316 are formed to be spaced apart from each other, and each may be formed to contact the semiconductor layer 111 exposed through the contact hole. The source electrode 315 may be formed to contact the source region 111a of the semiconductor layer 111, and the drain electrode 116 may be formed to contact the drain region 111c of the semiconductor layer 311.

The protective electrode 741 may be formed on the pad electrode 641 exposed through the contact hole. That is, the protective electrode 741 may be formed by overlapping the area where the second pad electrode layer 641b of the pad electrode 641 is exposed. Accordingly, the second pad electrode layer 641b may be formed to be surrounded by the pad electrode 641 and the interlayer insulating film 121.

The data line, source electrode 315, and drain electrode 316 may be formed of multiple layers. For example, the data line, source electrode 315, and drain electrode 316 may be formed as a double layer. At this time, the data line, source electrode 315, and drain electrode 316 are each a first metal layer (315a, 316a, not shown) and a second metal layer disposed on the first metal layer (315a, 316a, not shown). (not shown, 315b, 316b).

The data line, source electrode 315, and drain electrode 361 are made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum (Ta). , titanium (Ti), moly titanium (MoTi), and combinations thereof. Preferably, the first metal layer (315a, 316a, not shown) of the data line, source electrode 315, and drain electrode 316 is made of moly titanium (MoTi), and the second metal layer (315b, not shown) is made of moly titanium (MoTi). 316b) may be made of copper (Cu).

In addition, the protective electrode 741 is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and moly. It may include any one selected from the group consisting of titanium (MoTi) and combinations thereof. Preferably, the protective electrode 741 may be made of moly titanium (MoTi).

Here, the first metal layers (315a, 316a, not shown) of the data line, source electrode 315, and drain electrode 316 may be in the same layer and made of the same material as the protection electrode 741.

Accordingly, the thin film transistor (Tr) including the semiconductor layer 111, the gate electrode 313, the source electrode 315, and the drain electrode 316 and the pad electrode 641 are disposed on the pad electrode 641. A pad portion 640 including a protective electrode 741 can be formed.

A protective film 122 may be formed on the thin film transistor Tr, and a planarization film 123 may be formed on the protective film 122. The protective film 122 and the planarization film 123 may include a contact hole exposing the drain electrode 316 of the thin film transistor (Tr).

The protective film 122 and the planarization film 123 may not be disposed on the pad electrode 640 exposed to the outside through the contact hole of the interlayer insulating film 121. At this time, the protective film 122 may be formed surrounding the data line. Additionally, the planarization film 123 may be formed only in the display area AA where the thin film transistor Tr is formed.

The first electrode 130 of the organic light emitting device (OL) is formed on the planarization film 123. The first electrode 130 may be electrically connected to the drain electrode 316 through a contact hole penetrating the protective film 122 and the planarization film 123. Additionally, the first electrode 130 may be an anode electrode.

However, the first electrode 130 is not limited to the drawing and may be made of multiple layers. For example, the first electrode 130 may be formed in a triple-layer structure in which a first electrode layer, a second electrode layer, and a third electrode layer are sequentially stacked.

Additionally, a bank pattern 139 is formed on the planarization film 123. The bank pattern 139 is arranged to expose a portion of the upper surface of the first electrode 130 of the organic light emitting device (OL). That is, the bank pattern 139 is formed to surround the side surface of the first electrode 130, thereby preventing corrosion of the side surface of the first electrode 130.

The organic light emitting layer 135 of the organic light emitting device OL may be disposed in the area surrounded by the bank pattern 139. Although the organic light-emitting layer 135 is shown as a single layer in the drawing, it is not limited to this. The organic light-emitting layer 135 may be composed of a single layer of a light-emitting material, and may include a hole injection layer, a hole transporting layer, an emitting material layer, and an electron transport layer ( It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

A second electrode 136 may be formed on the organic light emitting layer 135. At this time, the second electrode 136 may be a cathode electrode. The second electrode 136 may be formed of a metal or metal alloy with a low work function. However, it is not limited to this, and may generally include materials that can be used as a cathode electrode. The second electrode 136 may be formed in the display area AA. At this time, the second electrode 136 may be formed on the upper surface of the organic light-emitting layer 135.

The organic electroluminescent display device according to the present invention has the effect of preventing corrosion of the pad electrode 641 through the protective electrode 741 disposed overlapping with the pad electrode 641.

Next, with reference to FIG. 2, an organic light emitting display device according to a second embodiment will be described. Figure 2 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention. The organic light emitting display device according to the second embodiment of the present invention may include the same and similar configuration as the organic light emitting display device according to the first embodiment described above. Descriptions that overlap with the previously described embodiments may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 2, the organic electroluminescent display device according to the second embodiment of the present invention includes a substrate 100 divided into a display area (Active Area; AA) and a non-display area (Inactive Area; IA). The display area (AA) of the substrate 100 includes a thin film transistor (Tr), an organic light emitting device (OL) electrically connected to the thin film transistor (Tr), and an auxiliary electrode (160) connected to the organic light emitting device (OL). ) can be placed.

Additionally, a pad portion may be disposed in the non-display area (IA) of the substrate 100. The pad portion may include a first pad portion 140 and a second pad portion 150. The thin film transistor (Tr), organic light emitting element (OL), auxiliary electrode 160, first pad portion 140, and second pad portion 150 will be described in detail as follows.

A gate line is formed in one direction on the substrate 100, and a data line is formed in a direction different from the one direction. The gate line and the data line may intersect each other to define a pixel area in the display area AA. A thin film transistor (Tr) is formed in the intersection area of the gate line and the data line. Additionally, an organic light emitting device (OL) electrically connected to the thin film transistor (Tr) is formed in the pixel area.

The thin film transistor (Tr) includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 113 branched from the gate line, a source electrode 115 branched from the data line, and the source electrode 115. ) and a drain electrode 116 formed to be spaced apart from each other on the same layer. The organic light emitting device (OL) includes a first electrode 130, a second electrode 136 formed opposite the first electrode 130, and a space between the first electrode 130 and the second electrode 136. It may include an organic light-emitting layer 135 formed in . The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162. Additionally, the first pad portion 140 includes a first lower pad electrode 141 and a first upper pad electrode 142, and the second pad portion 150 includes a second lower pad electrode 151 and It may include a second upper pad electrode 152.

A semiconductor layer 111 is formed on the substrate 100 in the display area AA. A gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed in the display area (AA) and the non-display area (IA). That is, the gate insulating film 120 may be formed on the entire surface of the substrate 100 on which the semiconductor layer 111 is formed.

The gate line, gate electrode 113, first lower pad electrode 141, and second lower pad electrode 151 may be formed on the gate insulating layer 120. The gate electrode 113 may be formed to overlap the semiconductor layer 111 in the display area AA. Additionally, the first lower pad electrode 141 and the second lower pad electrode 151 may be formed in the non-display area (IA).

The gate line, gate electrode 113, first lower pad electrode 141, and second lower pad electrode 151 may be formed of the same material. At this time, the gate line and the gate electrode 113 may be formed integrally. Additionally, the gate line and the first lower pad electrode 141 may be formed integrally.

The gate line, gate electrode 113, first lower pad electrode 141, and second lower pad electrode 151 are formed as a single layer in the drawing, but may be formed as a multi-layer of two or more layers. The gate line, gate electrode 113, first lower pad electrode 141, and second lower pad electrode 151 are made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), and molybdenum ( It may include any one selected from the group consisting of Mo), chromium (Cr), tantalum (Ta), titanium (Ti), moly titanium (MoTi), and combinations thereof.

An interlayer insulating film 121 may be formed on the gate line, gate electrode 113, first lower pad electrode 141, and second lower pad electrode 151. The interlayer insulating film 121 may include multiple contact holes.

In the display area AA, the interlayer insulating layer 121 and the gate insulating layer 120 may include a contact hole exposing the semiconductor layer 111. The contact hole may expose the source region 111a and drain region 111c of the semiconductor layer 111.

In the non-display area (IA), the interlayer insulating layer 121 may include a contact hole exposing the first lower pad electrode 141. Additionally, the interlayer insulating layer 121 in the non-display area (IA) may include a contact hole exposing the second lower pad electrode 151.

The data line, the source electrode 115, the drain electrode 116, the first upper pad electrode 142, and the second upper pad electrode 152 are formed on the interlayer insulating film 121 including the plurality of contact holes. It can be. The data line may be arranged to extend in a different direction from the gate line. The source electrode 115 and the drain electrode 116 are formed to be spaced apart from each other, and each may be formed to contact the semiconductor layer 111 exposed through the contact hole. The source electrode 115 may be formed to contact the source region 111a of the semiconductor layer 111, and the drain electrode 116 may be formed to contact the drain region 111c of the semiconductor layer 111.

The first upper pad electrode 142 may be formed on the first lower pad electrode 141 exposed through the contact hole. Additionally, the second upper pad electrode 152 may be formed on the second lower pad electrode 151 exposed through the contact hole.

The data line, source electrode 115, drain electrode 116, first upper pad electrode 142, and second upper pad electrode 152 may be formed of the same material. At this time, the data line and the source electrode 115 may be formed integrally. Additionally, the data line and the second upper pad electrode 152 may be formed integrally.

The data line, source electrode 115, drain electrode 116, first upper pad electrode 142, and second upper pad electrode 152 may be formed of multiple layers. For example, the data line, source electrode 115, drain electrode 116, first upper pad electrode 142, and second upper pad electrode 152 may be formed as a triple layer.

That is, the source electrode 115 may include a first source electrode layer 115a, a second source electrode layer 115b, and a third source electrode layer 115c. The drain electrode 116 may include a first drain electrode layer 116a, a second drain electrode layer 116b, and a third drain electrode layer 116c. The first upper pad electrode 142 may include a first pad electrode layer 142a, a second pad electrode layer 142b, and a third pad electrode layer 142c. Additionally, the second upper pad electrode 152 may include a first pad electrode layer 152a, a second pad electrode layer 152b, and a third pad electrode layer 152c.

The first source electrode layer 115a, the first drain electrode layer 116a, the first pad electrode layer 142a of the first upper pad electrode 142, and the first pad electrode layer 152a of the second upper pad electrode 152 ) can be formed from the same material. The first source electrode layer 115a, the first drain electrode layer 116a, the first pad electrode layer 142a of the first upper pad electrode 142, and the first pad electrode layer 152a of the second upper pad electrode 152 ) are the second source electrode layer 115b, the second drain electrode layer 116b, the second pad electrode layer 142b of the first upper pad electrode 142, and the second pad of the second upper pad electrode 152, respectively. The adhesion of the electrode layer 152b can be improved. For example, the first source electrode layer 115a, the first drain electrode layer 116a, the first pad electrode layer 142a of the first upper pad electrode 142, and the first electrode layer 142a of the second upper pad electrode 152. The pad electrode layer 152a may be formed of any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

The second source electrode layer 115b, the second drain electrode layer 116b, the second pad electrode layer 142b of the first upper pad electrode 142, and the second pad electrode layer 152b of the second upper pad electrode 152. ) can be formed from the same material. The second source electrode layer 115b, the second drain electrode layer 116b, the second pad electrode layer 142b of the first upper pad electrode 142, and the second pad electrode layer 152b of the second upper pad electrode 152. ) can be formed of a material with low resistance. For example, the second source electrode layer 115b, the second drain electrode layer 116b, the second pad electrode layer 142b of the first upper pad electrode 142, and the second pad electrode layer 142b of the second upper pad electrode 152. The pad electrode layer 152b is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and combinations thereof. It may include any one selected from the group consisting of Preferably, the second source electrode layer 115b, the second drain electrode layer 116b, the second pad electrode layer 142b of the first upper pad electrode 142, and the second electrode layer 142b of the second upper pad electrode 152 The pad electrode layer 152b may include copper (Cu).

The third source electrode layer 115c, the third drain electrode layer 116c, the third pad electrode layer 142c of the first upper pad electrode 142, and the third pad electrode layer 152c of the second upper pad electrode 152. ) can be formed from the same material. The third source electrode layer 115c, the third drain electrode layer 116c, the third pad electrode layer 142c of the first upper pad electrode 142, and the third pad electrode layer 152c of the second upper pad electrode 152. ) can be formed of a material that is not corroded by oxygen and moisture even when exposed to the outside. For example, the third source electrode layer 115c, the third drain electrode layer 116c, the third pad electrode layer 142c of the first upper pad electrode 142, and the third electrode layer 142c of the second upper pad electrode 152. The pad electrode layer 152c may be formed of any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

The upper pad electrodes 142 and 152 of the pad portions 140 and 150 are formed to include a plurality of pad electrode layers. At this time, the pad electrode layers 142c and 152c disposed on the uppermost side may be formed of a material that is not corroded by oxygen and moisture even when exposed to the outside. In particular, the pad electrode layers 142c and 152c disposed on the uppermost side may be formed of a material that will not be etched later by the etchant for the first electrode 130 of the organic light emitting device (OL). That is, the pad electrode layers 142c and 152c disposed on the uppermost side may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. As a result, corrosion can be prevented, reliability can be improved, and signal transmission defects can be improved.

Accordingly, the thin film transistor (Tr) including the semiconductor layer 111, the gate electrode 113, the source electrode 115, and the drain electrode 116, the first lower pad electrode 141, and the first upper pad A first pad portion 140 including an electrode 142 and a second pad portion 150 including the second lower pad electrode 151 and the second upper pad electrode 152 may be formed. The lower pad electrodes 141 and 151 of the first and second pad portions 140 and 150 may be formed in the same process as the gate line and gate electrode 113. Additionally, the upper pad electrodes 142 and 152 of the first and second pad portions 140 and 150 may be formed in the same process as the data line, source electrode 115, and drain electrode 116.

A protective film 122 may be formed on the thin film transistor (Tr), the first pad part 140, and the second pad part 150. That is, the protective film 122 is formed in the display area AA and the non-display area IA, and may be formed on the entire surface of the substrate 100.

Additionally, a planarization film 123 may be formed on the protective film 122. The planarization film 123 may not be disposed on the first pad part 140 and the second pad part 150. That is, the planarization film 123 may be formed only in the display area AA where the thin film transistor Tr is formed.

The protective film 122 and the planarization film 123 may include a contact hole exposing the drain electrode 116 of the thin film transistor (Tr). Additionally, the protective film 122 may include a contact hole exposing the upper pad electrodes 142 and 152 of the pad portions 140 and 150.

At this time, the protective film 122 may be formed to expose the upper surfaces of the third pad electrode layers 142c and 152c of the upper pad electrodes 142 and 152. At this time, the protective film 122 is formed to surround the side surfaces of the upper pad electrodes 142 and 152, thereby preventing corrosion of the sides of the upper pad electrodes 142 and 152.

At this time, the contact holes of the protective film 122 and the planarization film 123 that expose the drain electrode 116 of the thin film transistor (Tr) may be formed together in the same process. However, the method of forming the contact hole is not limited to this. A protective film 122 is formed on the entire surface of the substrate 100, and the protective film 122 is formed in the first pad part 140 and the second pad part 150 formation area and the drain electrode formation area of the thin film transistor (Tr). The planarization film 123 may be formed to expose. Thereafter, a separate photoresist pattern is formed and the protective film 122 is etched using the photoresist pattern as a mask to form the first pad portion 140, the second pad portion 150, and the drain electrode 116. A contact hole exposing can be formed.

The auxiliary electrode 160 and the first electrode 130 of the organic light emitting device (OL) are formed on the planarization film 123. The auxiliary electrode 160 and the first electrode 130 are formed to be spaced apart from each other.

The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162. The first auxiliary electrode 161 may be formed as a double layer. In detail, the first auxiliary electrode 161 may be formed by stacking a lower auxiliary electrode layer 161a and an upper auxiliary electrode layer 161b.

The lower auxiliary electrode layer 161a can improve the adhesion of the upper auxiliary electrode layer 161b. For example, the lower auxiliary electrode layer 161a may be formed of any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

Additionally, the upper auxiliary electrode layer 161b may be formed of a metal with low resistance. For example, the upper auxiliary electrode layer 161b is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), and titanium (Ti). ) and may include any one selected from the group consisting of combinations thereof. Preferably, the upper auxiliary electrode layer 161b may be formed of copper (Cu). Therefore, since the auxiliary electrode 160 includes a material with low resistance, luminance uniformity can be improved.

The second auxiliary electrode 162 is formed on the first auxiliary electrode 161. At this time, the second auxiliary electrode 162 may be formed to surround the top and side surfaces of the first auxiliary electrode 161. The second auxiliary electrode 162 may be formed of multiple layers. For example, the second auxiliary electrode 162 may be formed in a triple-layer structure in which a first auxiliary electrode layer 162a, a second auxiliary electrode layer 162b, and a third auxiliary electrode layer 162c are sequentially stacked.

The first electrode 130 may be electrically connected to the drain electrode 116 through a contact hole penetrating the protective film 122 and the planarization film 123. Additionally, the first electrode 130 may be an anode electrode. The first electrode 130 may be formed of multiple electrode layers. For example, the first electrode 130 may be formed in a triple-layer structure in which a first electrode layer 130a, a second electrode layer 130b, and a third electrode layer 130c are sequentially stacked.

The second auxiliary electrode 162 and the first electrode 130 of the organic light emitting device (OL) may be formed of the same material. The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the same material. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the same material. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the same material.

The first auxiliary electrode layer 162a and the first electrode layer 130a may increase the adhesion of the second auxiliary electrode layer 162b and the second electrode layer 130b, respectively. The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of a transparent conductive material. For example, the first electrode layer 130a may be formed of ITO.

The second electrode layer 130b may be a reflective layer. At this time, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of metal or metal alloy. For example, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of silver (Ag)-alloy. Through this, the organic light emitting device (OL) can implement a top-emitting organic electroluminescence display device that emits light upward.

The third electrode layer 130c has a large work function, allowing the first electrode 130 to function as an anode electrode. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of a transparent conductive material. For example, the third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of ITO.

When the auxiliary electrode 160 is formed only with the second auxiliary electrode 162 made of the same material as the first electrode 130, in order to improve luminance uniformity, the first auxiliary electrode layer 162a and the second auxiliary electrode layer 162a 3 Since the ITO included in the auxiliary electrode layer 162c is a material with high resistance, the second auxiliary electrode layer 162b made of silver (Ag)-alloy must be formed to a thickness of 8000 Å or more. However, when forming the second auxiliary electrode layer 162b and the second electrode layer 130b with a thickness of 8000 Å or more, a problem may occur in which the substrate 100 made of glass or the like is broken.

Additionally, when the auxiliary electrode 160 is formed only with the first auxiliary electrode 161 containing a material with low resistance such as copper, a problem in which corrosion of the auxiliary electrode 160 may occur may occur. In addition, since etching may occur during the process of forming the auxiliary electrode 160 and forming the first electrode 130, there is a problem that a process is added to prevent this.

Accordingly, the auxiliary electrode 160 includes a first auxiliary electrode 161 made of a material with low resistance and a second auxiliary electrode 162 that protects the first auxiliary electrode 161. As a result, uniformity of luminance can be secured even in large areas and the process can be simplified.

Additionally, a bank pattern 139 is formed on the planarization film 123. The bank pattern 139 is formed to expose the first electrode 130 and the auxiliary electrode 160 of the organic light emitting device (OL). At this time, only the upper surfaces of the first electrode 130 and the auxiliary electrode 160 may be exposed. That is, the bank pattern 139 is formed to surround the side surfaces of the first electrode 130 and the auxiliary electrode 160 to prevent corrosion of the sides of the first electrode 130 and the auxiliary electrode 160. can be prevented.

A partition 131 is formed on the exposed auxiliary electrode 160. The partition wall 131 may include partition layers 132 and 133 and dummy layers 134 and 137. The barrier rib layers 132 and 133 may include a first barrier layer 132 and a second barrier layer 133. The dummy layers 134 and 137 may include a first dummy layer 134 and a second dummy layer 137 .

The first barrier layer 132 may be formed of the same material as the bank pattern 139. That is, the first barrier layer 132 may be formed through the same process as the bank pattern 139.

The second partition layer 133 has an area that gradually increases from the bottom to the top, and the side surface is inclined. That is, the second barrier layer 133 is formed in a reverse tapered shape. However, the first barrier layer 132 and the second barrier layer 133 are not limited to this and may be formed as one barrier layer, and it is sufficient if the barrier layer is formed in an inverse tapered shape.

An organic light emitting layer 135 and a first dummy layer 134 are formed on the display area AA of the substrate 100 on which the first barrier layer 132 and the second barrier layer 133 are formed. The organic light emitting layer 135 may be formed on the first electrode 130 and the bank pattern 139 exposed by the bank pattern 139 . Additionally, the first dummy layer 134 may be formed on the second barrier layer 133.

The organic light-emitting layer 135 and the first dummy layer 134 may be formed to have straight-line properties. For example, it may be formed by an evaporation method. For this reason, as the second barrier layer 133 is formed in an inverse tapered shape, the organic light emitting layer 135 and the first dummy layer 134 are aligned with the bank pattern 139 and the second barrier layer 133. It can only be formed on the top surface. That is, the organic light emitting layer 135 or the first dummy layer 134 may not be formed on the side surfaces of the barrier layers 132 and 133 and the bank pattern 139.

For this reason, the organic light-emitting layer 135 may be formed to be spaced apart from the auxiliary electrode 160 and not be in contact with the auxiliary electrode 160. Additionally, the auxiliary electrode 160 may be exposed.

The organic light-emitting layer 135 and the first dummy layer 134 may be formed of the same material. That is, the organic light-emitting layer 135 and the first dummy layer 134 may be formed from an organic light-emitting material in the same process, and depending on the formation location and role, the organic light-emitting layer 135 and the first dummy layer ( 134).

A second electrode 136 may be formed on the organic light emitting layer 135. At this time, the second electrode 136 may be a cathode electrode. The second electrode 136 may be formed of a metal or metal alloy with a low work function. However, it is not limited to this, and may generally include materials that can be used as a cathode electrode.

The second electrode 136 may be formed in the display area AA. At this time, the second electrode 136 may be formed on the upper surface of the organic light-emitting layer 135. If the second electrode 136 is formed by a method such as sputtering, damage may occur in the organic light-emitting layer 135. Accordingly, the second electrode 136 can be formed to have a straight line like the organic light-emitting layer 135. For example, it may be formed by an evaporation method.

A second dummy layer 137 may be formed on the first dummy layer 134. The second dummy layer 137 may be formed of the same material as the second electrode 136, and the second dummy layer 137 may also be formed to have straight properties. That is, the second electrode 136 and the second dummy layer 137 may be formed of the same material in the same process, and depending on the formation location and role, the second electrode 136 and the second dummy layer It can be divided into (137).

As the second barrier layer 133 is formed in a reverse tapered shape, the second electrode 136 and the second dummy layer 137 are formed on the upper surfaces of the organic light-emitting layer 135 and the first dummy layer 134. It can only be formed in That is, the second electrode 136 and the second dummy layer 137 may not be formed on the side surfaces of the barrier layers 132 and 133, the first dummy layer 134, and the bank pattern 139.

For this reason, the second electrode 136 may be formed to be spaced apart from the auxiliary electrode 160 and not be in contact with the auxiliary electrode 160. Additionally, the auxiliary electrode 160 may be exposed.

A conductive layer 180 may be formed connecting the second electrode 136 and the auxiliary electrode 160. The conductive layer 180 may be formed of a transparent conductive material. For example, the conductive layer 180 may be formed of IZO.

The conductive layer 180 is formed on the second electrode 136. Additionally, the conductive layer 180 may be formed to contact the side of the partition 131 and the top surface of the auxiliary electrode 160. At this time, the conductive layer 180 may be formed by a sputtering method with excellent step coverage. Even if the conductive layer 180 is formed by a sputtering method, the second electrode 136 is disposed between the conductive layer 180 and the organic light-emitting layer 135 to prevent damage to the organic light-emitting layer 135. can do.

Accordingly, the second electrode 136 may be electrically connected to the auxiliary electrode 160 through the conductive layer 180. Because the auxiliary electrode 160 reduces the resistance of the second electrode 136 and reduces the voltage drop, current can be transmitted uniformly throughout the display area AA. Because of this, the luminance uniformity of the organic light emitting display device according to the present invention can be improved.

However, it is not limited to the drawings, and the conductive layer 180 serves as a cathode electrode, and the second electrode 136 may be omitted. That is, the cathode electrode is made of a transparent conductive material and may be formed to directly contact the auxiliary electrode 160. At this time, the cathode electrode may be IZO. Therefore, in one embodiment, as shown in the drawing, the second electrode 136 and the auxiliary electrode 160 may be formed to be spaced apart and connected to the conductive layer 180. Additionally, in another embodiment, the second electrode 180 may be formed to directly contact the auxiliary electrode 160.

Next, with reference to FIG. 3, an organic light emitting display device according to a third embodiment of the present invention will be described. Figure 3 is a cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention. The organic light emitting display device according to the third embodiment of the present invention may include the same and similar configuration as the organic light emitting display device according to the previously described embodiments. Descriptions that overlap with the previously described embodiments may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 3, the organic electroluminescent display device according to the third embodiment of the present invention has a thin film transistor ( Tr), an organic light emitting device (OL) electrically connected to the thin film transistor (Tr), and an auxiliary electrode 160 electrically connected to the organic light emitting device (OL) may be disposed. Additionally, a pad portion may be disposed in the non-display area (IA) of the substrate 100.

A gate line is formed in one direction on the substrate 100, and a data line is formed in a direction different from the one direction. A thin film transistor (Tr) is formed in the intersection area of the gate line and the data line.

The thin film transistor (Tr) includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 213 branched from the gate line, a source electrode 115 branched from the data line, and the source electrode 115. ) and a drain electrode 116 formed to be spaced apart from each other on the same layer. The organic light emitting device (OL) includes a first electrode 130, a second electrode 136 formed opposite the first electrode 130, and a space between the first electrode 130 and the second electrode 136. It may include an organic light-emitting layer 135 formed in . The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162.

The pad portion may include a first pad portion and a second pad portion. The first pad portion may include a first pad electrode 240. Additionally, the second pad portion may include a second pad electrode 250.

A semiconductor layer 111 is formed on the substrate 100 in the display area AA, and a gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed in the display area (AA) and the non-display area (IA).

A gate line, a gate electrode 213, and a first pad electrode 240 may be formed on the gate insulating layer 120. The gate electrode 213 may be formed to overlap the semiconductor layer 111 in the display area AA. Additionally, the first pad electrode 240 may be formed in the non-display area (IA).

The gate line, gate electrode 213, and first pad electrode 240 may be formed of the same material. At this time, the gate line and the gate electrode 213 may be formed integrally. Additionally, the gate line and the first pad electrode 240 may be formed integrally.

The gate line, gate electrode 213, and first pad electrode 240 may be formed of multiple layers. For example, the gate line, gate electrode 213, and first pad electrode 240 may be formed as a triple layer.

That is, the gate electrode 213 may include a first gate electrode layer 213a, a second gate electrode layer 213b, and a third gate electrode layer 213c. The first pad electrode 240 may include a first pad electrode layer 240a, a second pad electrode layer 240b, and a third pad electrode layer 240c.

The first gate electrode layer 213a of the gate electrode 213 and the first pad electrode layer 240a of the first pad electrode 240 may be formed of the same material. The first gate electrode layer 213a and the first pad electrode layer 240a of the first pad electrode 240 are the second gate electrode layer 213b and the second pad electrode layer 240b of the first pad electrode 240, respectively. Adhesion can be improved. For example, the first gate electrode layer 123a and the first pad electrode layer 240a of the first pad electrode 240 are any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. It can be formed as one.

The second gate electrode layer 123b and the second pad electrode layer 240b of the first pad electrode 240 may be formed of the same material. The first gate electrode layer 123b and the second pad electrode layer 240b of the first pad electrode 240 may be formed of a material with low resistance. For example, the second gate electrode layer 213b and the second pad electrode layer 240b of the first pad electrode 240 are aluminum (Al), tungsten (W), copper (Cu), silver (Ag), and molybdenum. It may include any one selected from the group consisting of (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and combinations thereof. Preferably, the second gate electrode layer 213b and the second pad electrode layer 240b of the first pad electrode 240 may include copper (Cu).

The third gate electrode layer 213c and the third pad electrode layer 240c of the first pad electrode 240 may be formed of the same material. The third gate electrode layer 213c and the third pad electrode layer 240c of the first pad electrode 240 may be formed of a material that is not corroded by oxygen and moisture even when exposed to the outside. For example, the third gate electrode layer 213c and the third pad electrode layer 240c of the first pad electrode 240 are any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. It can be formed as one.

An interlayer insulating film 121 may be formed on the gate line, gate electrode 213, and first pad electrode 240. In the display area AA, the interlayer insulating layer 121 and the gate insulating layer 120 may include a contact hole exposing the semiconductor layer 111.

A data line, a source electrode 115, a drain electrode 116, and a second pad electrode 250 may be formed on the interlayer insulating film 121. The data line may be arranged to extend in a different direction from the gate line. The source electrode 115 and the drain electrode 116 are formed to be spaced apart from each other, and each may be formed to contact the semiconductor layer 111 exposed through the contact hole.

The data line, source electrode 115, drain electrode 116, and second pad electrode 250 may be formed of the same material. At this time, the data line and the source electrode 115 may be formed integrally. Additionally, the data line and the second pad electrode 250 may be formed integrally.

The data line, source electrode 115, drain electrode 116, and second pad electrode 250 may be formed of multiple layers. For example, the data line, source electrode 115, drain electrode 116, and second pad electrode 250 may be formed as a triple layer.

That is, the source electrode 115 may include a first source electrode layer 115a, a second source electrode layer 115b, and a third source electrode layer 115c. The drain electrode 116 may include a first drain electrode layer 116a, a second drain electrode layer 116b, and a third drain electrode layer 116c. The second pad electrode 250 may include a first pad electrode layer 250a, a second pad electrode layer 250b, and a third pad electrode layer 250c.

The first source electrode layer 115a, the first drain electrode layer 116a, and the first pad electrode layer 250a of the second pad electrode 250 may be formed of the same material. The first source electrode layer 115a, the first drain electrode layer 116a, and the first pad electrode layer 250a of the second pad electrode 250 are a group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. It can be formed as any one selected from.

The second source electrode layer 115b, the second drain electrode layer 116b, and the second pad electrode layer 250b of the second upper pad electrode 250 may be formed of the same material. The second source electrode layer 115b, the second drain electrode layer 116b, and the second pad electrode layer 250b of the second pad electrode 250 are made of aluminum (Al), tungsten (W), copper (Cu), and silver ( It may contain any one selected from the group consisting of Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and combinations thereof, and preferably includes copper (Cu). can do.

The third source electrode layer 115c, the third drain electrode layer 116c, and the third pad electrode layer 250c of the second pad electrode 250 may be formed of the same material. The third source electrode layer 115c, the third drain electrode layer 116c, and the third pad electrode layer 250c of the second pad electrode 250 are made of moly titanium (MoTi), titanium (Ti), and combinations thereof. It can be formed as any one selected from the group.

Accordingly, the thin film transistor (Tr) including the semiconductor layer 111, the gate electrode 213, the source electrode 115, and the drain electrode 116, and the first pad portion including the first pad electrode 240. And, a second pad portion including the second pad electrode 250 can be formed.

The first pad electrode 240 of the pad portion may be formed in the same process as the gate line and gate electrode 213. Additionally, the second pad electrode 250 of the pad portion may be formed in the same process as the data line, source electrode 115, and drain electrode 116.

A protective film 122 may be formed on the thin film transistor (Tr), the first pad part 240, and the second pad part 250. That is, the protective film 122 is formed in the display area AA and the non-display area IA, and may be formed on the entire surface of the substrate 100.

Additionally, a planarization film 123 may be formed on the protective film 122. The planarization film 123 may not be disposed on the first pad electrode 240 and the second pad electrode 250. That is, the planarization film 123 may be formed only in the display area AA where the thin film transistor Tr is formed.

The protective film 122 and the planarization film 123 may include a contact hole exposing the drain electrode 116 of the thin film transistor (Tr). Additionally, the protective film 122 and the interlayer insulating film 121 may include a contact hole exposing the first pad electrode 240. Additionally, the protective film 122 may include a contact hole exposing the second pad electrode 250.

At this time, only the upper surfaces of the first pad electrode 240 and the second pad electrode 250 may be exposed. That is, it may be formed to expose the upper surface of the third pad electrode layer 240c of the first pad electrode 240 and the third pad electrode layer 250c of the second pad electrode 250. The protective film 122 is formed to surround the side surfaces of the first pad electrode 240 and the second pad electrode 250, and forms a shape that surrounds the side surfaces of the first pad electrode 240 and the second pad electrode 250. Corrosion can be prevented.

That is, the first pad electrode 240 of the first pad part and the second pad electrode 250 of the second pad part must be exposed to the outside in order to be connected to the driving unit later. When using a pad electrode made of low-resistance copper (Cu), etc., it is advantageous for signal transmission, but there is a problem in that corrosion occurs when exposed to the outside. In addition, there was a problem in that the pad electrode formed of copper (Cu) or the like was etched together with the formation of the first electrode 130 in the process of forming the organic light emitting device (OL) later.

Accordingly, the organic light emitting display device according to the third embodiment of the present invention includes pad electrodes 240 and 250 made of a plurality of pad electrode layers. At this time, the pad electrode layers 240c and 250c disposed on the uppermost side do not corrode even when exposed to the outside and may be formed of a material that will not be etched later by the etchant for the first electrode 130 of the organic light emitting device (OL). That is, the pad electrode layers 240c and 250c disposed on the uppermost side may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. As a result, corrosion can be prevented, reliability can be improved, and signal transmission defects can be improved.

The auxiliary electrode 160 and the first electrode 130 of the organic light emitting device (OL) are formed on the planarization film 123. The auxiliary electrode 160 and the first electrode 130 are formed to be spaced apart from each other.

The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162. The first auxiliary electrode 161 may be formed as a double layer. In detail, the first auxiliary electrode 161 may be formed by stacking a lower auxiliary electrode layer 161a and an upper auxiliary electrode layer 161b.

The lower auxiliary electrode layer 161a may be formed of any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. In addition, the upper auxiliary electrode layer 161b is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and It may include any one selected from the group consisting of combinations thereof. Preferably, the upper auxiliary electrode layer 161b may be formed of copper (Cu). Therefore, since the auxiliary electrode 160 includes a material with low resistance, luminance uniformity can be improved.

The second auxiliary electrode 162 is formed on the first auxiliary electrode 161. At this time, the second auxiliary electrode 162 may be formed to surround the top and side surfaces of the first auxiliary electrode 161. The second auxiliary electrode 162 may be formed of multiple layers. For example, the second auxiliary electrode 162 may be formed in a triple-layer structure in which a first auxiliary electrode layer 162a, a second auxiliary electrode layer 162b, and a third auxiliary electrode layer 162c are sequentially stacked.

The first electrode 130 may be electrically connected to the drain electrode 116 through a contact hole penetrating the protective film 122 and the planarization film 123. Additionally, the first electrode 130 may be an anode electrode. The first electrode 130 may be formed of multiple electrode layers. For example, the first electrode 130 may be formed in a triple-layer structure in which a first electrode layer 130a, a second electrode layer 130b, and a third electrode layer 130c are sequentially stacked.

The second auxiliary electrode 162 and the first electrode 130 of the organic light emitting device (OL) may be formed of the same material. The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the same material. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the same material. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the same material.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of a transparent conductive material. For example, the first electrode layer 130a may be formed of ITO. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of metal or metal alloy. For example, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of silver (Ag)-alloy. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of a transparent conductive material. For example, the third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of ITO.

When the auxiliary electrode 160 is formed only with the second auxiliary electrode 162 made of the same material as the first electrode 130, there is a problem that the thickness must be 8000 Å or more. Additionally, when the auxiliary electrode 160 is formed using only the first auxiliary electrode 161, there is a problem in that the auxiliary electrode 160 is corroded or additional processes are required.

Accordingly, the auxiliary electrode 160 includes a first auxiliary electrode 161 made of a material with low resistance and a second auxiliary electrode 162 that protects the first auxiliary electrode 161. As a result, uniformity of luminance can be secured even in large areas and the process can be simplified.

Additionally, a bank pattern 139 is formed on the planarization film 123. The bank pattern 139 is formed to expose the first electrode 130 and the auxiliary electrode 160 of the organic light emitting device (OL). At this time, only the upper surfaces of the first electrode 130 and the auxiliary electrode 160 may be exposed. That is, the bank pattern 139 is formed to surround the side surfaces of the first electrode 130 and the auxiliary electrode 160 to prevent corrosion of the sides of the first electrode 130 and the auxiliary electrode 160. can be prevented.

A partition 131 is formed on the exposed auxiliary electrode 160. The partition wall 131 may include partition layers 132 and 133 and dummy layers 134 and 137. The barrier rib layers 132 and 133 may include a first barrier layer 132 and a second barrier layer 133. The dummy layers 134 and 137 may include a first dummy layer 134 and a second dummy layer 137 .

The second barrier layer 133 is disposed on the first barrier layer 132, has an area that gradually increases from the bottom to the top, and has a slanted side surface. That is, the second barrier layer 133 is formed in a reverse tapered shape. However, the first barrier layer 132 and the second barrier layer 133 are not limited to this and may be formed as one barrier layer, and it is sufficient if the barrier layer is formed in an inverse tapered shape.

The organic light emitting layer 135 is formed on the display area AA of the substrate 100 on which the first barrier layer 132 and the second barrier layer 133 are formed. The organic light emitting layer 135 may be formed on the first electrode 130 and the bank pattern 139. Additionally, a first dummy layer 134 made of the same material as the organic light-emitting layer 135 may be formed on the upper surface of the second barrier layer 133.

A second electrode 136 may be formed on the organic light emitting layer 135. At this time, the second electrode 136 may be a cathode electrode. The second electrode 136 may be formed in the display area AA. The second electrode 136 may be formed only on the top surface of the organic light emitting layer 135. At this time, a second dummy layer 137 made of the same material as the second electrode 136 may be formed on the upper surface of the first dummy layer 134.

The second electrode 136 and the auxiliary electrode 160 may be connected through a conductive layer 180. The conductive layer 180 is formed on the second electrode 136. Additionally, the conductive layer 180 may be formed to contact the side of the partition wall 131 and the top surface of the auxiliary electrode 160. The conductive layer 180 may be formed of a transparent conductive material.

Accordingly, the second electrode 136 may be electrically connected to the auxiliary electrode 160. Because the auxiliary electrode 160 reduces the resistance of the second electrode 136 and reduces the voltage drop, current can be transmitted uniformly throughout the display area AA. Because of this, the luminance uniformity of the organic light emitting display device according to the present invention can be improved.

However, it is not limited to the drawings, and the conductive layer 180 serves as a cathode electrode, and the second electrode 136 may be omitted. That is, the cathode electrode is made of a transparent conductive material and may be formed to directly contact the auxiliary electrode 160. At this time, the cathode electrode may be IZO. Therefore, in one embodiment, as shown in the drawing, the second electrode 136 and the auxiliary electrode 160 may be formed to be spaced apart and connected to the conductive layer 180. Additionally, in another embodiment, the second electrode 180 may be formed to directly contact the auxiliary electrode 160.

Next, with reference to FIG. 4, an organic electroluminescent display device according to a fourth embodiment of the present invention will be described. Figure 4 is a cross-sectional view of an organic light emitting display device according to a fourth embodiment of the present invention. The organic light emitting display device according to the fourth embodiment of the present invention may include the same and similar configuration as the organic light emitting display device according to the previously described embodiments. Descriptions that overlap with the previously described embodiments may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 4, the organic light emitting display device according to the fourth embodiment of the present invention includes a substrate 100 divided into a display area (AA) and a non-display area (IA). The display area (AA) of the substrate 100 includes a thin film transistor (Tr), an organic light emitting device (OL) electrically connected to the thin film transistor (Tr), and an auxiliary electrode electrically connected to the organic light emitting device (OL). (160) can be arranged. Additionally, a pad portion may be disposed in the non-display area (IA) of the substrate 100.

A gate line is formed in one direction on the substrate 100, and a data line is formed in a direction different from the one direction. A thin film transistor (Tr) is formed in the intersection area of the gate line and the data line.

The thin film transistor (Tr) includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 113 branched from the gate line, a source electrode 215 branched from the data line, and the source electrode 215. ) and a drain electrode 216 formed to be spaced apart from each other on the same layer. The organic light emitting device (OL) includes a first electrode 130, a second electrode 136 formed opposite the first electrode 130, and a space between the first electrode 130 and the second electrode 136. It may include an organic light-emitting layer 135 formed in . The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162.

The pad portion may include a first pad portion and a second pad portion. The first pad portion may include a first pad electrode 340. Additionally, the second pad portion may include a second pad electrode 350.

A semiconductor layer 111 is formed on the substrate 100 in the display area AA, and a gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed in the display area (AA) and the non-display area (IA).

A gate line, a gate electrode 213, a first pad electrode 340, and a second pad electrode 350 may be formed on the gate insulating film 120. The gate line, gate electrode 213, first pad electrode 340, and second pad electrode 350 may be formed of the same material. At this time, the gate line and the gate electrode 213 may be formed integrally. Additionally, the gate line and the first pad electrode 340 may be formed integrally.

The gate line, gate electrode 213, first pad electrode 340, and second pad electrode 350 may be formed of multiple layers. For example, the gate line, gate electrode 213, first pad electrode 340, and second pad electrode 350 may be formed as a triple layer.

That is, the gate electrode 213 may include a first gate electrode layer 213a, a second gate electrode layer 213b, and a third gate electrode layer 213c. The first pad electrode 340 may include a first pad electrode layer 340a, a second pad electrode layer 340b, and a third pad electrode layer 340c. The second pad electrode 350 may include a first pad electrode layer 350a, a second pad electrode layer 350b, and a third pad electrode layer 350c.

The first gate electrode layer 213a, the first pad electrode layer 340a of the first pad electrode 340, and the first pad electrode layer 350a of the second pad electrode 350 may be formed of the same material. Additionally, the second gate electrode layer 213b, the second pad electrode layer 340b of the first pad electrode 340, and the second pad electrode layer 350b of the second pad electrode 350 may be formed of the same material. . Additionally, the third gate electrode layer 213c, the third pad electrode layer 340c of the first pad electrode 340, and the third pad electrode layer 350c of the second pad electrode 350 may be formed of the same material. .

The first gate electrode layer 213a, the first pad electrode layer 340a of the first pad electrode 340, and the first pad electrode layer 350a of the second pad electrode 350 are made of moly titanium (MoTi) or titanium (Ti). ) and combinations thereof. In addition, the second gate electrode layer 213b, the second pad electrode layer 340b of the first pad electrode 340, and the second pad electrode layer 350b of the second pad electrode 350 are made of aluminum (Al), tungsten ( It may include any one selected from the group consisting of W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and combinations thereof, Preferably, it may contain copper (Cu). The third gate electrode layer 213c, the third pad electrode layer 340c of the first pad electrode 340, and the third pad electrode layer 350c of the second pad electrode 350 are the third gate electrode layer 213c and The third pad electrode layer 340c of the first pad electrode 340 may be formed of the same material. The third gate electrode layer 213c and the third pad electrode layer 340c of the first pad electrode 340 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. You can.

An interlayer insulating film 121 may be formed on the gate line, gate electrode 213, first pad electrode 340, and second pad electrode 350. In the display area AA, the interlayer insulating layer 121 and the gate insulating layer 120 may include a contact hole exposing the semiconductor layer 111. Additionally, in the non-display area (IA), the interlayer insulating layer 121 may include a contact hole exposing the first pad electrode 340 and the second pad electrode 350.

At this time, the first and second contact holes of the interlayer insulating film 121 may be disposed on the second pad electrode 350. The second pad electrode 350 may be exposed to the outside through the first contact hole, and the second pad electrode 351 may be connected to the data line through the second contact hole.

The interlayer insulating film 121 may be formed so that only the top surfaces of the first pad electrode 340 and the second pad electrode 350 are exposed. That is, it may be formed to expose the upper surface of the third pad electrode layer 340c of the first pad electrode 340 and the third pad electrode layer 350c of the second pad electrode 350. The interlayer insulating film 121 is formed to surround the side surfaces of the first pad electrode 340 and the second pad electrode 350, Corrosion of the sides can be prevented.

That is, the first pad electrode 340 of the first pad part and the second pad electrode 350 of the second pad part must be exposed to the outside in order to be connected to the driving unit later. The first pad electrode 340 and the second pad electrode 350 are made of a plurality of pad electrode layers, and the third pad electrode layers 240c and 250c disposed on the uppermost side are made of moly titanium (MoTi) or titanium (Ti). and a combination thereof. As a result, corrosion of the pad electrodes 340 and 350 can be prevented, reliability can be improved, and signal transmission defects can be improved.

A data line, a source electrode 215, and a drain electrode 216 may be formed on the interlayer insulating film 121. The data line, source electrode 215, and drain electrode 216 may be formed of the same material.

At this time, the data line and the source electrode 215 may be formed integrally. In the display area AA, the source electrode 215 and the drain electrode 216 may be connected to the semiconductor layer 111 through a contact hole formed in the interlayer insulating layer 121. Additionally, in the non-display area (IA), the data line may be connected to the second pad electrode 350 through a contact hole formed in the interlayer insulating layer 121.

The data line, source electrode 215, and drain electrode 216 are formed as a single layer in the drawing, but may be formed as a multi-layer formed of two or more layers. In addition, the data line, source electrode 215, and drain electrode 216 are aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum ( It may include any one selected from the group consisting of Ta), titanium (Ti), moly titanium (MoTi), and combinations thereof.

Accordingly, the thin film transistor (Tr) including the semiconductor layer 111, the gate electrode 213, the source electrode 215, and the drain electrode 216, and the first pad portion including the first pad electrode 340. And, a second pad portion including the second pad electrode 350 can be formed.

The first pad electrode 340 and the second pad electrode 350 of the pad portion may be formed in the same process as the gate line and gate electrode 213. At this time, the second pad electrode 250 of the pad portion may be electrically connected to the data line.

A protective film 122 may be formed on the thin film transistor Tr, and a planarization film 123 may be formed on the protective film 122. The protective film 122 and the planarization film 123 may include a contact hole exposing the drain electrode 216 of the thin film transistor (Tr).

The protective film 122 and the planarization film 123 may not be disposed on the first pad electrode 340 and the second pad electrode 350 exposed to the outside through the contact hole of the interlayer insulating film 121. . At this time, the protective film 122 may be formed surrounding the data line. Additionally, the planarization film 123 may be formed only in the display area AA where the thin film transistor Tr is formed.

The auxiliary electrode 160 and the first electrode 130 of the organic light emitting device (OL) are formed on the planarization film 123. The auxiliary electrode 160 and the first electrode 130 are formed to be spaced apart from each other.

The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162. The first auxiliary electrode 161 may be formed as a double layer. In detail, the first auxiliary electrode 161 may be formed by stacking a lower auxiliary electrode layer 161a and an upper auxiliary electrode layer 161b.

The lower auxiliary electrode layer 161a may be formed of any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. In addition, the upper auxiliary electrode layer 161b is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and It may include any one selected from the group consisting of combinations thereof. Preferably, the upper auxiliary electrode layer 161b may be formed of copper (Cu). Therefore, since the auxiliary electrode 160 includes a material with low resistance, luminance uniformity can be improved.

The second auxiliary electrode 162 is formed on the first auxiliary electrode 161. At this time, the second auxiliary electrode 162 may be formed to surround the top and side surfaces of the first auxiliary electrode 161. The second auxiliary electrode 162 may be formed of multiple layers. For example, the second auxiliary electrode 162 may be formed in a triple-layer structure in which a first auxiliary electrode layer 162a, a second auxiliary electrode layer 162b, and a third auxiliary electrode layer 162c are sequentially stacked.

The first electrode 130 may be electrically connected to the drain electrode 116 through a contact hole penetrating the protective film 122 and the planarization film 123. Additionally, the first electrode 130 may be an anode electrode. The first electrode 130 may be formed of multiple electrode layers. For example, the first electrode 130 may be formed in a triple-layer structure in which a first electrode layer 130a, a second electrode layer 130b, and a third electrode layer 130c are sequentially stacked.

The second auxiliary electrode 162 and the first electrode 130 of the organic light emitting device (OL) may be formed of the same material. The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the same material. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the same material. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the same material.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of a transparent conductive material. For example, the first electrode layer 130a may be formed of ITO. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of metal or metal alloy. For example, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of silver (Ag)-alloy. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of a transparent conductive material. For example, the third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of ITO.

When the auxiliary electrode 160 is formed only with the second auxiliary electrode 162 made of the same material as the first electrode 130, there is a problem that the thickness must be 8000 Å or more. Additionally, when the auxiliary electrode 160 is formed using only the first auxiliary electrode 161, there is a problem in that the auxiliary electrode 160 is corroded or additional processes are required.

Accordingly, the auxiliary electrode 160 includes a first auxiliary electrode 161 made of a material with low resistance and a second auxiliary electrode 162 that protects the first auxiliary electrode 161. As a result, uniformity of luminance can be secured even in large areas and the process can be simplified.

Additionally, a bank pattern 139 is formed on the planarization film 123. The bank pattern 139 is formed to expose the first electrode 130 and the auxiliary electrode 160 of the organic light emitting device (OL). At this time, only the upper surfaces of the first electrode 130 and the auxiliary electrode 160 may be exposed. That is, the bank pattern 139 is formed to surround the side surfaces of the first electrode 130 and the auxiliary electrode 160 to prevent corrosion of the sides of the first electrode 130 and the auxiliary electrode 160. can be prevented.

A partition 131 is formed on the exposed auxiliary electrode 160. The partition wall 131 may include partition layers 132 and 133 and dummy layers 134 and 137. The barrier rib layers 132 and 133 may include a first barrier layer 132 and a second barrier layer 133. The dummy layers 134 and 137 may include a first dummy layer 134 and a second dummy layer 137 .

The second barrier layer 133 is disposed on the first barrier layer 132, has an area that gradually increases from the bottom to the top, and has a slanted side surface. That is, the second barrier layer 133 is formed in a reverse tapered shape. However, the first barrier layer 132 and the second barrier layer 133 are not limited to this and may be formed as one barrier layer, and it is sufficient if the barrier layer is formed in an inverse tapered shape.

The organic light emitting layer 135 is formed on the display area AA of the substrate 100 on which the first barrier layer 132 and the second barrier layer 133 are formed. The organic light emitting layer 135 may be formed on the first electrode 130 and the bank pattern 139. Additionally, a first dummy layer 134 made of the same material as the organic light-emitting layer 135 may be formed on the upper surface of the second barrier layer 133.

A second electrode 136 may be formed on the organic light emitting layer 135. At this time, the second electrode 136 may be a cathode electrode. The second electrode 136 may be formed in the display area AA. The second electrode 136 may be formed on the top surface of the organic light-emitting layer 135. Additionally, a second dummy layer 137 made of the same material as the second electrode 136 may be formed on the upper surface of the first dummy layer 134.

At this time, the second electrode 136 may be connected to the auxiliary electrode 160 through the conductive layer 180. The conductive layer 180 may be formed on the second electrode 136. Additionally, the conductive layer 180 may be formed to contact the side of the partition 131 and the top surface of the auxiliary electrode 160.

Accordingly, the second electrode 136 may be electrically connected to the auxiliary electrode 160. Because the auxiliary electrode 160 reduces the resistance of the second electrode 136 and reduces the voltage drop, current can be transmitted uniformly throughout the display area AA. Because of this, the luminance uniformity of the organic light emitting display device according to the present invention can be improved.

However, it is not limited to the drawings, and the conductive layer 180 serves as a cathode electrode, and the second electrode 136 may be omitted. That is, the cathode electrode is made of a transparent conductive material and can be formed to directly contact the auxiliary electrode 160. At this time, the cathode electrode may be IZO. Therefore, in one embodiment, as shown in the drawing, the second electrode 136 and the auxiliary electrode 160 may be formed to be spaced apart from each other and connected to the conductive layer 180. Additionally, in another embodiment, the second electrode 180 may be formed to directly contact the auxiliary electrode 160.

Next, with reference to FIG. 5, an organic electroluminescent display device according to a fifth embodiment of the present invention will be described. Figure 5 is a cross-sectional view of an organic light emitting display device according to a fifth embodiment of the present invention. The organic light emitting display device according to the fifth embodiment of the present invention may include the same and similar configuration as the organic light emitting display device according to the previously described embodiments. Descriptions that overlap with the previously described embodiments may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 5, the organic electroluminescent display device according to the fifth embodiment of the present invention includes a substrate 100 divided into a display area (AA) and a non-display area (IA). Display of the substrate 100 In the area AA, a thin film transistor (Tr), an organic light emitting device (OL) electrically connected to the thin film transistor (Tr), and an auxiliary electrode 160 electrically connected to the organic light emitting device (OL) may be disposed. there is. Additionally, a pad portion may be disposed in the non-display area (IA) of the substrate 100.

A gate line is formed in one direction on the substrate 100, and a data line is formed in a direction different from the one direction. A thin film transistor (Tr) is formed in the intersection area of the gate line and the data line.

The thin film transistor (Tr) includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 113 branched from the gate line, a source electrode 215 branched from the data line, and the source electrode 215. ) and a drain electrode 216 formed to be spaced apart from each other on the same layer. The organic light emitting device (OL) includes a first electrode 130, a second electrode 136 formed opposite the first electrode 130, and a space between the first electrode 130 and the second electrode 136. It may include an organic light-emitting layer 135 formed in . The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162.

The pad portion may include a first pad portion 440 and a second pad portion 450. The first pad portion 440 may include a first pad electrode 441 and a first protective electrode 442. Additionally, the second pad portion 450 may include a second pad electrode 451 and a second protective electrode 452.

A semiconductor layer 111 is formed on the substrate 100 in the display area AA, and a gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed in the display area (AA) and the non-display area (IA).

A gate line, a gate electrode 113, and a first pad electrode 441 may be formed on the gate insulating film 120. The gate electrode 113 may be formed to overlap the semiconductor layer 111 in the display area AA. Additionally, the first pad electrode 441 may be formed in the non-display area (IA).

The gate line, gate electrode 113, and first pad electrode 441 may be formed of the same material. At this time, the gate line and the gate electrode 113 may be formed integrally. Additionally, the gate line and the first pad electrode 441 may be formed integrally.

The gate line, gate electrode 113, and first pad electrode 441 are formed as a single layer in the drawing, but may be formed as a multi-layer of two or more layers. The gate line, gate electrode 113, and first pad electrode 441 are made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum ( It may include any one selected from the group consisting of Ta), titanium (Ti), moly titanium (MoTi), and combinations thereof.

An interlayer insulating film 121 may be formed on the gate line, gate electrode 113, and first pad electrode 441. In the display area AA, the interlayer insulating layer 121 and the gate insulating layer 120 may include a contact hole exposing the semiconductor layer 111.

A data line, a source electrode 215, a drain electrode 216, and a second pad electrode 451 may be formed on the interlayer insulating film 121. The data line may be arranged to extend in a different direction from the gate line. The source electrode 215 and the drain electrode 216 are formed to be spaced apart from each other, and each may be formed to contact the semiconductor layer 111 exposed through the contact hole.

The data line, source electrode 215, drain electrode 216, and second pad electrode 451 may be formed of the same material. At this time, the data line and the source electrode 215 may be formed integrally. Additionally, the data line and the second pad electrode 451 may be formed integrally.

The data line, source electrode 215, drain electrode 216, and second pad electrode 451 are formed as a single layer in the drawing, but may be formed as a multi-layer of two or more layers. In addition, the data line, source electrode 215, and drain electrode 216 are aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum ( It may include any one selected from the group consisting of Ta), titanium (Ti), moly titanium (MoTi), and combinations thereof.

Accordingly, the thin film transistor (Tr) including the semiconductor layer 111, the gate electrode 113, the source electrode 215, and the drain electrode 216, the first pad electrode 441, and the second pad electrode (451) can be formed.

That is, the first pad electrode 441 of the first pad portion 440 may be formed in the same process as the gate line and gate electrode 113. Additionally, the second pad electrode 451 of the second pad portion 450 may be formed in the same process as the data line, source electrode 215, and drain electrode 216.

A protective film 122 may be formed on the thin film transistor (Tr), the first pad electrode 441, and the second pad electrode 451. That is, the protective film 122 is formed in the display area AA and the non-display area IA, and may be formed on the entire surface of the substrate 100.

Additionally, a planarization film 123 may be formed on the protective film 122. The planarization film 123 may not be disposed on the first pad electrode 441 and the second pad electrode 451. That is, the planarization film 123 may be formed only in the display area AA where the thin film transistor Tr is formed.

The protective film 122 and the planarization film 123 may include a contact hole exposing the drain electrode 216 of the thin film transistor (Tr). Additionally, the protective film 122 and the interlayer insulating film 121 may include a contact hole exposing the first pad electrode 441. Additionally, the protective film 122 may include a contact hole exposing the second pad electrode 451.

At this time, only the top surfaces of the first pad electrode 441 and the second pad electrode 451 may be exposed. That is, the side surfaces of the first pad electrode 441 and the second pad electrode 451 are formed to contact the interlayer insulating film 121 or the protective film 122, so that the first pad electrode 441 and the second pad Corrosion of the side of the electrode 451 can be prevented.

An auxiliary electrode 160, a connecting electrode 170, a first electrode 130, a first protective electrode 442, and a second protective electrode 452 are formed on the protective film 122 and the planarization film 123. do. That is, the auxiliary electrode 160, the connection electrode 170, and the first electrode 130 are formed on the planarization film 123 in the display area AA. Additionally, a first protective electrode 442 and a second protective electrode 452 are formed on the protective film 122 in the non-display area (IA).

The auxiliary electrode 160 is formed to be spaced apart from the connection electrode 170 and the first electrode 130. The connection electrode 170 may be connected to the exposed drain electrode 216. Additionally, the first electrode 130 is disposed on the connection electrode 170. That is, the connection electrode 170 may be disposed between the first electrode 130 and the drain electrode 216.

The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162. The second auxiliary electrode 162 is formed on the first auxiliary electrode 161. At this time, the second auxiliary electrode 162 may be formed to surround the top and side surfaces of the first auxiliary electrode 161.

At this time, the first auxiliary electrode 161 may be formed of the same material as the connection electrode 170. Additionally, the second auxiliary electrode 162 may be formed of the same material as the first electrode 130.

The first auxiliary electrode 161 may include a lower auxiliary electrode layer 161a and an upper auxiliary electrode layer 161b. Additionally, the connection electrode 170 may include a lower connection electrode layer 170a and an upper connection electrode layer 170b.

The lower auxiliary electrode layer 161a and the lower connection electrode layer 170a may be formed of the same material. It may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

Additionally, the upper auxiliary electrode layer 161b and the upper connection electrode layer 170b may be formed of the same material. The upper auxiliary electrode layer 161b and the upper connection electrode layer 170b are aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum (Ta). , titanium (Ti), and combinations thereof. Preferably, the upper auxiliary electrode layer 161b and the upper connection electrode layer 170b may be formed of copper (Cu).

The second auxiliary electrode 162 may include a first auxiliary electrode layer 162a, a second auxiliary electrode layer 162b, and a third auxiliary electrode layer 162c. Additionally, the first electrode 130 may include a first electrode layer 130a, a second electrode layer 130b, and a third electrode layer 130c.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the same material. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the same material. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the same material.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of a transparent conductive material. For example, the first electrode layer 130a may be formed of ITO. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of metal or metal alloy. For example, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of silver (Ag)-alloy. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of a transparent conductive material. For example, the third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of ITO.

In the non-display area (IA), the first protective electrode 442 may be formed on the exposed first pad electrode 441. Additionally, the second protective electrode 452 may be formed on the exposed second pad electrode 451. The planarization film 123 may not be formed on at least the first pad part 440 and the second pad part 450.

The first protective electrode 442 or the second protective electrode 452 may be formed of a material that does not corrode even when exposed to the outside. For example, the first protective electrode 442 or the second protective electrode 452 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. As a result, it is possible to prevent the first pad electrode 441 or the second pad electrode 451 from being corroded by moisture and oxygen.

The first protective electrode 442 or the second protective electrode 452 may be formed of the same material as the first auxiliary electrode 161 and the connection electrode 170. In detail, the first protective electrode 442 or the second protective electrode 452 includes the lower auxiliary electrode layer 161a of the first auxiliary electrode 161 and the lower connection electrode layer 170a of the connection electrode 170. It can be formed from the same material as.

The first protective electrode 442 or the second protective electrode 452 may be formed as a single layer. That is, the first protective electrode 442 or the second protective electrode 452 may be formed of a material that is not etched by a silver (Ag)-alloy or ITO etchant.

The pad portion may be exposed to the outside to be connected to the driving unit. That is, the pad electrode or protection electrode may be exposed to the outside. For example, if the pad electrode or protective electrode is made of a material that can corrode due to moisture and oxygen, such as copper (Cu) or silver (Ag)-alloy, and is exposed to the outside, signal transmission may be defective. .

Therefore, in the organic electroluminescent display device according to the present invention, a protective electrode is formed on the pad electrode with a non-corrosive material. For example, the protective electrode may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. As a result, the pad electrode is formed so as not to be exposed to the outside, thereby preventing the pad electrode from coming into contact with oxygen and moisture. In addition, it has the effect of preventing corrosion of the pad electrode and preventing signal transmission defects.

A bank pattern 139 and barrier layers 132 and 133 may be formed on the first electrode 130 and the auxiliary electrode 160. An organic light emitting layer 135 and a first dummy layer 134 may be formed on the bank pattern 139 and the barrier layer 132 and 133. A second electrode 136 and a second dummy layer 137 may be formed on the organic light emitting layer 135 and the first dummy layer 134. Additionally, a conductive layer 180 may be formed on the second electrode 136 and the second dummy layer 137.

The conductive layer 180 is formed to contact the second electrode 136 and the auxiliary electrode 160. Since the auxiliary electrode 160 includes a first auxiliary electrode 161 made of a material with low resistance and a second auxiliary electrode 162 that protects the first auxiliary electrode 161, uniformity of luminance even in a large area is achieved. can be secured.

However, it is not limited to the drawings, and the conductive layer 180 serves as a cathode electrode, and the second electrode 136 may be omitted. That is, the cathode electrode is made of a transparent conductive material and may be formed to directly contact the auxiliary electrode 160. At this time, the cathode electrode may be IZO. Therefore, in one embodiment, as shown in the drawing, the second electrode 136 and the auxiliary electrode 160 may be formed to be spaced apart and connected to the conductive layer 180. Additionally, in another embodiment, the second electrode 180 may be formed to directly contact the auxiliary electrode 160.

Next, with reference to FIG. 6, an organic electroluminescent display device according to a sixth embodiment of the present invention will be described. Figure 6 is a cross-sectional view of an organic light emitting display device according to a sixth embodiment of the present invention. The organic light emitting display device according to the sixth embodiment of the present invention may include the same and similar configuration as the organic light emitting display device according to the previously described embodiments. Descriptions that overlap with the previously described embodiments may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 6, the organic electroluminescent display device according to the sixth embodiment of the present invention has the organic light emitting diode display device according to the fourth embodiment of the present invention except for the first pad portion 540 and the second pad portion 550. It may include the same or similar configuration as the electroluminescence display device.

The organic electroluminescent display device according to the sixth embodiment of the present invention includes a substrate 100 divided into a display area (AA) and a non-display area (IA). A thin film is formed in the display area (AA) of the substrate 100. A transistor (Tr), an organic light emitting device (OL) electrically connected to the thin film transistor (Tr), and an auxiliary electrode 160 electrically connected to the organic light emitting device (OL) may be disposed. Additionally, a pad portion may be disposed in the non-display area (IA) of the substrate 100.

A gate line is formed in one direction on the substrate 100, and a data line is formed in a direction different from the one direction. A thin film transistor (Tr) is formed in the intersection area of the gate line and the data line.

The thin film transistor (Tr) includes a semiconductor layer 111 formed on the substrate 100, a gate electrode 113 branched from the gate line, a source electrode 215 branched from the data line, and the source electrode 215. ) and a drain electrode 216 formed to be spaced apart from each other on the same layer. The organic light emitting device (OL) includes a first electrode 130, a second electrode 136 formed opposite the first electrode 130, and a space between the first electrode 130 and the second electrode 136. It may include an organic light-emitting layer 135 formed in . The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162.

The pad portion may include a first pad portion 540 and a second pad portion 550. The first pad portion 540 may include a first lower pad electrode 541, a first upper pad electrode 542, and a first protective electrode 543. Additionally, the second pad portion 550 may include a second lower pad electrode 551, a second upper pad electrode 552, and a second protective electrode 553.

A semiconductor layer 111 is formed on the substrate 100 in the display area AA, and a gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed in the display area (AA) and the non-display area (IA).

A gate line, a gate electrode 113, a first lower pad electrode 541, and a second lower pad electrode 551 may be formed on the gate insulating film 120. The gate electrode 113 may be formed to overlap the semiconductor layer 111 in the display area AA. Additionally, the first lower pad electrode 541 and the second lower pad electrode 551 may be formed in the non-display area (IA).

The gate line, gate electrode 113, first lower pad electrode 541, and second lower pad electrode 551 may be formed of the same material. At this time, the gate line and the gate electrode 113 may be formed integrally. Additionally, the gate line and the first lower pad electrode 541 may be formed integrally.

An interlayer insulating film 121 may be formed on the gate line, gate electrode 113, first lower pad electrode 541, and second lower pad electrode 551. In the display area AA, the interlayer insulating layer 121 and the gate insulating layer 120 may include a contact hole exposing the semiconductor layer 111.

A data line, a source electrode 215, a drain electrode 216, a first upper pad electrode 542, and a second upper pad electrode 552 may be formed on the interlayer insulating film 121. The data line may be arranged to extend in a different direction from the gate line. The source electrode 215 and the drain electrode 216 are formed to be spaced apart from each other, and each may be formed to contact the semiconductor layer 111 exposed through the contact hole.

The data line, source electrode 215, drain electrode 216, first upper pad electrode 542, and second upper pad electrode 552 may be formed of the same material. At this time, the data line and the source electrode 215 may be formed integrally. Additionally, the data line and the second upper pad electrode 552 may be formed integrally.

That is, the first lower pad electrode 541 of the first pad part 540 and the second lower pad electrode 551 of the second pad part 550 are formed in the same process as the gate line and gate electrode 113. can be formed. In addition, the first upper pad electrode 542 of the first pad part 540 and the second upper pad electrode 552 of the second pad part 550 are connected to the data line, the source electrode 215, and the drain electrode ( 216) and can be formed in the same process.

A protective film 122 may be formed on the thin film transistor (Tr), the first upper pad electrode 542, and the second upper pad electrode 552. That is, the protective film 122 is formed in the display area AA and the non-display area IA, and may be formed on the entire surface of the substrate 100.

Additionally, a planarization film 123 may be formed on the protective film 122. The planarization film 123 may not be disposed on the first and second pad electrodes 541 and 542 and 551 and 552. That is, the planarization film 123 may be formed only in the display area AA where the thin film transistor Tr is formed.

The protective film 122 and the planarization film 123 may include a contact hole exposing the drain electrode 216 of the thin film transistor (Tr). Additionally, the protective film 122 may include a contact hole exposing the first upper pad electrode 542 and the second upper pad electrode 552.

At this time, only the upper surfaces of the first upper pad electrode 542 and the second upper pad electrode 552 may be exposed. That is, the side surfaces of the first upper pad electrode 542 and the second upper pad electrode 552 are formed to contact the protective film 122, so that the first upper pad electrode 542 and the second upper pad electrode Corrosion of the sides of (552) can be prevented.

An auxiliary electrode 160, a connecting electrode 170, a first electrode 130, a first protective electrode 543, and a second protective electrode 553 are formed on the protective film 122 and the planarization film 123. do. That is, the auxiliary electrode 160, the connection electrode 170, and the first electrode 130 are formed on the planarization film 123 in the display area AA. Additionally, a first protective electrode 543 and a second protective electrode 553 are formed on the protective film 122 in the non-display area (IA).

The auxiliary electrode 160 is formed to be spaced apart from the connection electrode 170 and the first electrode 130. The connection electrode 170 may be connected to the exposed drain electrode 216. Additionally, the first electrode 130 is disposed on the connection electrode 170. That is, the connection electrode 170 may be disposed between the first electrode 130 and the drain electrode 216.

The auxiliary electrode 160 may include a first auxiliary electrode 161 and a second auxiliary electrode 162. The second auxiliary electrode 162 is formed on the first auxiliary electrode 161. At this time, the second auxiliary electrode 162 may be formed to surround the top and side surfaces of the first auxiliary electrode 161.

At this time, the first auxiliary electrode 161 may be formed of the same material as the connection electrode 170. Additionally, the second auxiliary electrode 162 may be formed of the same material as the first electrode 130.

The first auxiliary electrode 161 may include a lower auxiliary electrode layer 161a and an upper auxiliary electrode layer 161b. Additionally, the connection electrode 170 may include a lower connection electrode layer 170a and an upper connection electrode layer 170b.

The lower auxiliary electrode layer 161a and the lower connection electrode layer 170a may be formed of the same material. It may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

Additionally, the upper auxiliary electrode layer 161b and the upper connection electrode layer 170b may be formed of the same material. The upper auxiliary electrode layer 161b and the upper connection electrode layer 170b are aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum (Ta). , titanium (Ti), and combinations thereof. Preferably, the upper auxiliary electrode layer 161b and the upper connection electrode layer 170b may be formed of copper (Cu).

The second auxiliary electrode 162 may include a first auxiliary electrode layer 162a, a second auxiliary electrode layer 162b, and a third auxiliary electrode layer 162c. Additionally, the first electrode 130 may include a first electrode layer 130a, a second electrode layer 130b, and a third electrode layer 130c.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the same material. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the same material. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the same material.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of a transparent conductive material. For example, the first electrode layer 130a may be formed of ITO. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of metal or metal alloy. For example, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of silver (Ag)-alloy. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of a transparent conductive material. For example, the third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of ITO.

In the non-display area (IA), the first protective electrode 543 may be formed on the exposed first pad electrode 541. Additionally, the second protective electrode 553 may be formed on the exposed second pad electrode 551. The planarization film 123 may not be formed on at least the first pad part 540 and the second pad part 550.

The first protective electrode 543 or the second protective electrode 553 may be made of a material that does not corrode even when exposed to the outside. For example, the first protective electrode 543 or the second protective electrode 553 may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. As a result, it is possible to prevent the first pad electrode 541 or the second pad electrode 551 from being corroded by moisture and oxygen.

The first protective electrode 543 or the second protective electrode 553 may be formed of the same material as the first auxiliary electrode 161 and the connection electrode 170. In detail, the first protective electrode 543 or the second protective electrode 553 includes the lower auxiliary electrode layer 161a of the first auxiliary electrode 161 and the lower connection electrode layer 170a of the connection electrode 170. It can be formed of the same material as.

The first protective electrode 543 or the second protective electrode 553 may be formed as a single layer. That is, the first protective electrode 543 or the second protective electrode 553 may be formed of a material that is not etched by a silver (Ag)-alloy or ITO etchant.

The pad portion may be exposed to the outside to be connected to the driving unit. That is, the pad electrode or protection electrode may be exposed to the outside. For example, if the pad electrode or protective electrode is made of a material that can corrode due to moisture and oxygen, such as copper (Cu) or silver (Ag)-alloy, and is exposed to the outside, signal transmission may be defective. .

Therefore, in the organic electroluminescent display device according to the present invention, a protective electrode is formed on the pad electrode with a non-corrosive material. For example, the protective electrode may be formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. As a result, the pad electrode is formed so as not to be exposed to the outside, thereby preventing the pad electrode from coming into contact with oxygen and moisture. In addition, it has the effect of preventing corrosion of the pad electrode and preventing signal transmission defects.

A bank pattern 139 and partition layers 132 and 133 may be formed on the first electrode 130 and the auxiliary electrode 160. An organic light emitting layer 135 and a first dummy layer 134 may be formed on the bank pattern 139 and the barrier layers 132 and 133. A second electrode 136 and a second dummy layer 137 may be formed on the organic light emitting layer 135 and the first dummy layer 134. Additionally, a conductive layer 180 may be formed on the second electrode 136 and the second dummy layer 137.

The conductive layer 180 is formed to contact the second electrode 136 and the auxiliary electrode 160. Since the auxiliary electrode 160 includes a first auxiliary electrode 161 made of a material with low resistance and a second auxiliary electrode 162 that protects the first auxiliary electrode 161, uniformity of luminance even in a large area is achieved. can be secured.

However, it is not limited to the drawings, and the conductive layer 180 serves as a cathode electrode, and the second electrode 136 may be omitted. That is, the cathode electrode is made of a transparent conductive material and may be formed to directly contact the auxiliary electrode 160. At this time, the cathode electrode may be IZO. Therefore, in one embodiment, as shown in the drawing, the second electrode 136 and the auxiliary electrode 160 may be formed to be spaced apart and connected to the conductive layer 180. Additionally, in another embodiment, the second electrode 180 may be formed to directly contact the auxiliary electrode 160.

Next, with reference to FIGS. 7A to 7E, a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention will be described. 7A to 7E are diagrams showing a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention.

Referring to FIGS. 7A to 7E , the semiconductor layer 111 is formed on the display area (AA) of the substrate 100, which is divided into a display area (AA) and a non-display area (IA). The semiconductor layer 111 forms a semiconductor material layer, forms a photoresist pattern on the semiconductor material layer, etches the semiconductor material layer using the photoresist pattern as a mask, and removes the photoresist pattern ( It can be formed through a photoresist process (strip).

A gate insulating layer 120 is formed on the entire surface of the substrate 100 including the semiconductor layer 111. A gate line, a gate electrode 313 branched from the gate line, and a pad electrode 641 are formed on the gate insulating film 120.

The gate line, gate electrode 313, and pad electrode 641 form an electrode material layer on the gate insulating film 120, form a photoresist pattern on the electrode material layer, and use the photoresist pattern as a mask. It can be formed through a photoresist process of etching the electrode material layer and removing the photoresist pattern. That is, the gate line, gate electrode 313, and pad electrode 641 may be formed through the same process. Because of this, the gate line, gate electrode 313, and pad electrode 641 can be formed of the same material in the same layer.

Additionally, the gate line, gate electrode 313, and pad electrode 641 may be formed as a double layer. That is, a first electrode material may be formed on the gate insulating film 120, and a second electrode material may be formed on the first electrode material. Additionally, the first electrode material and the second electrode material may be etched through a photolithography process to form the gate line, gate electrode 313, and pad electrode 641.

Through this, as shown in FIG. 7A, the gate electrode 313 may be composed of a first gate electrode 313a and a second gate electrode 313b disposed on the first gate electrode 313a. Additionally, the pad electrode 641 may be composed of the first pad electrode 641a and a second pad electrode 641b disposed on the first pad electrode 641a.

An interlayer insulating film 121 is formed on the entire surface of the substrate 100 where the gate line, gate electrode 313, and pad electrode 641 are disposed. Then, a plurality of contact holes are formed on the interlayer insulating film 121. In detail, a contact hole is formed through the interlayer insulating film 121 and the gate insulating film 120 to expose the semiconductor layer 111. Additionally, a plurality of contact holes are formed through the interlayer insulating film 121 to expose the pad electrode 641. Here, a portion of the upper surface of the second pad electrode 641 may be exposed through the contact hole.

A first metal layer material 415a is formed on the interlayer insulating film 121. For example, the upper auxiliary electrode layer 161b is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), and titanium (Ti). ) and may include any one selected from the group consisting of combinations thereof. Preferably, the first metal layer material 415a may be moly titanium (MoTi).

A second metal layer material 415b is formed on the first metal layer material 415a. For example, the upper auxiliary electrode layer 161b is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium ( It may include any one selected from the group consisting of Ti) and combinations thereof. Preferably, the upper auxiliary electrode layer 161b may be formed of copper (Cu).

At this time, the first metal layer material 415a and the second metal layer material 415b are formed on the entire surface of the substrate 100. Photoresist 10 is formed on the second metal layer material 415b. The photoresist 10 may be formed on the entire surface of the substrate 100. The photoresist 10 may be a negative photoresist.

Then, the mask 300 is placed opposite the substrate 100. At this time, the mask 300 may be a halftone mask consisting of a blocking portion 301, a semi-transmissive portion 302, and a transmissive portion 303.

The transparent portion 303 of the mask 300 may be disposed to correspond to an area in the display area AA of the substrate 100 where the source electrode and drain electrode will be formed later. The semi-transmissive portion 302 of the mask 300 may be disposed in the non-display area (IA) of the substrate 100 to correspond to an area where a protective electrode will be formed later. The blocking portion 301 of the mask 300 may be disposed to correspond to the unformed areas of the source electrode, drain electrode, and protective electrode.

Light is irradiated to the photoresist 100 through the mask 300. Here, the photoresist 200 facing the semi-transmissive portion 302 of the mask 300 is semi-hardened by the irradiated light. Additionally, the photoresist 200 facing the transparent portion 303 of the mask 300 is cured by irradiated light.

Next, referring to FIG. 7B, the photoresist disposed corresponding to the blocking portion 301 of the mask 300 is removed. Through this, the photoresist disposed corresponding to the transparent portion 303 and the semi-transmissive portion 302 of the mask 300 remains as the first photoresist pattern 10a and the second photoresist pattern 10b, respectively.

In detail, the first photoresist pattern 10a remains in the area where the source and drain electrodes will be formed on the substrate 100 later, and the second photoresist pattern 10a will remain in the area where the protective electrode will later be formed on the substrate 100. The photoresist pattern 10b remains. That is, only the first photoresist pattern 10a remains in the display area AA, and only the second photoresist pattern 10b remains in the non-display area IA. Here, the height of the first photoresist pattern 10a is formed to be higher than the height of the second photoresist pattern 10b.

Using the first photoresist pattern 10a and the second photoresist pattern 10b as a mask, the first metal layer material 415a and the second metal layer material 415b are etched. Through this, the first metal layer material 415a and the second metal layer material 415b remain only under the first photoresist pattern 10a and the second photoresist pattern 10b.

Next, referring to FIG. 7C, the second photoresist pattern 10b disposed in the non-display area IA is etched. At this time, a portion of the first photoresist pattern 10a disposed in the display area AA is also etched. Accordingly, the third photoresist pattern 10c, which is lower in height than the first photoresist pattern 10a, remains in the area where the source electrode and drain electrode will be formed later.

The patterned second metal layer material 841d is exposed in the area where the second photoresist pattern 10b has been removed. A patterned first metal layer material 841c is disposed below the second metal layer material 841d. In addition, the first metal layer material 315c and the second metal layer material 315c remaining under the third photoresist pattern 10c disposed in the area where the source electrode will be formed later are the first metal layer and the second metal layer material of the source electrode, respectively. 2 It may be the same as the metal layer. The first metal layer material 316c and the second metal layer material 316d remaining below the third photoresist pattern 10c disposed in the area where the drain electrode will be formed later are the first and second metal layers of the drain electrode, respectively. It may be the same as .

Afterwards, the second metal layer material 841d disposed in the non-display area (IA) is etched. In the process of etching the second metal layer material 841d, the first metal layer material 841c disposed below the second metal layer material 841d remains without being etched. Here, the first metal layer material 841c may be the same as the protective electrode. Afterwards, the third photoresist pattern 10c remaining on the display area AA is removed.

Next, referring to FIG. 7D, the first metal layer materials 315c and 316c and the second metal layer materials 315d and 316d disposed below the third photoresist pattern 10c are respectively a source electrode 315 and a drain electrode ( 315), which become the first metal layers 315a and 316a and the second metal layers 315b and 316b. That is, the source electrode 315 is made of a first metal layer 315a and a second metal layer 315b disposed on the first metal layer 315a, and the drain electrode 316 is made of the first metal layer 316a. ) and a second metal layer 316b disposed on the first metal layer 316a.

Additionally, the first metal layer material disposed in the non-display area (IA) serves as a protective electrode 741. That is, the protective electrode 741 is formed to overlap the pad electrode 641.

A protective layer material 122a is formed on the substrate 100 including the source electrode 315, the drain electrode 316, and the protective electrode 741. The protective layer material 122a may be formed on the entire surface of the substrate 100.

At this time, the protective layer material 122a formed on the entire surface of the non-display area (IA) may be removed. The protective layer material 122a may be removed using a laser. In detail, the laser can be removed through a laser having a wavelength of 240 nm to 250 nm. If the wavelength of the laser is less than 240 nm or more than 250 nm, the protective layer material 122a may not be removed.

Next, referring to FIG. 7E, the protective layer material formed on the non-display area (IA) is removed, so that a pad electrode 641 is disposed in the non-display area (IA) overlapping with the pad electrode 641. A protective electrode 741 may be formed. Through the manufacturing method of the organic electroluminescent display device of the present invention, the protective electrode 741 that can protect the pad electrode 641 can be formed through a simple process.

Next, with reference to FIGS. 8A to 8E, a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention will be described. 8A to 8E are diagrams showing a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.

The manufacturing method of the organic light emitting display device according to the second embodiment of the present invention may include the same and similar configuration as the organic light emitting display device according to the previously described embodiments. Descriptions that overlap with the previously described embodiments may be omitted. The same reference numerals are assigned to the same components.

Referring to FIG. 8A, a thin film transistor (Tr), first pad electrodes 541 and 542, and second pad electrodes 551 and 552 are formed on the substrate 100 divided into a display area (AA) and a non-display area (IA). do. The first pad electrodes 541 and 542 include a first lower pad electrode 541 and a first upper pad electrode 542, and the second pad electrodes 551 and 552 include a second lower pad electrode 551 and a second upper pad electrode 542. It may include an upper pad electrode 552.

In detail, a semiconductor layer 111 is formed on the substrate 100. The semiconductor layer 111 forms a semiconductor material layer, forms a photoresist pattern on the semiconductor material layer, etches the semiconductor material layer using the photoresist pattern as a mask, and removes the photoresist pattern ( It can be formed through a photoresist process (strip). The semiconductor layer 111 may be formed in the display area AA. A gate insulating layer 120 is formed on the semiconductor layer 111. The gate insulating layer 120 may be formed on the entire surface of the substrate 100 on which the semiconductor layer 111 is formed.

A gate line, a gate electrode 113 branched from the gate line, a first lower pad electrode 541, and a second lower pad electrode 551 are formed on the gate insulating film 120. The gate line, gate electrode 113, first lower pad electrode 541, and second lower pad electrode 551 form an electrode material layer on the gate insulating film 120, and a photo layer is formed on the electrode material layer. It may be formed through a photoresist process of forming a resist pattern, etching the electrode material layer using the photoresist pattern as a mask, and removing the photoresist pattern. That is, the gate line, gate electrode 113, first lower pad electrode 541, and second lower pad electrode 551 may be formed through the same process. Because of this, the gate line, gate electrode 113, first lower pad electrode 541, and second lower pad electrode 551 may be formed of the same material in the same layer.

The gate electrode 113 may be formed in an area that overlaps the semiconductor layer 111. Additionally, the first lower pad electrode 541 may be formed integrally with the gate line.

An interlayer insulating film 121 is formed on the gate line, gate electrode 113, first lower pad electrode 541, and second lower pad electrode 551. The interlayer insulating film 121 may be formed on the entire surface of the substrate 100.

A plurality of contact holes are formed on the interlayer insulating film 121. In detail, a contact hole is formed through the interlayer insulating film 121 and the gate insulating film 120 to expose the semiconductor layer 111. Additionally, a plurality of contact holes are formed through the interlayer insulating film 121 to expose the first lower pad electrode 541 and the second lower pad electrode 551, respectively.

A data line, a source electrode 215 branched from the data line, a drain electrode 216, a first upper pad electrode 542, and a second upper pad electrode 552 are formed on the interlayer insulating film 121. The data line, the source electrode 215 branched from the data line, the drain electrode 216, the first upper pad electrode 542, and the second upper pad electrode 552 are formed of an electrode material on the interlayer insulating film 121. It may be formed through a photoresist process of forming a layer, forming a photoresist pattern on the electrode material layer, etching the electrode material layer using the photoresist pattern as a mask, and removing the photoresist pattern. That is, the data line, the source electrode 215 branched from the data line, the drain electrode 216, the first upper pad electrode 542, and the second upper pad electrode 552 may be formed through the same process. As a result, the data line, the source electrode 215 branched from the data line, the drain electrode 216, the first upper pad electrode 542, and the second upper pad electrode 552 are formed in the same layer and made of the same material. It can be.

The source electrode 215 and the drain electrode 216 are formed to be spaced apart from each other. Additionally, the source electrode 215 and the drain electrode 216 may each be formed on the exposed semiconductor layer 111. That is, the source electrode 215 and the drain electrode 216 are formed on the interlayer insulating film 121, and the semiconductor layer is formed through contact holes formed in the interlayer insulating film 121 and the gate insulating film 120, respectively. It can be connected to (111).

The first upper pad electrode 542 may be formed on the exposed first lower pad electrode 541. Additionally, the second upper pad electrode 552 may be formed on the exposed second lower pad electrode 551. Additionally, the second upper pad electrode 552 may be formed integrally with the data line.

Due to this, the thin film transistor (Tr) including the semiconductor layer 111, gate electrode 113, source electrode 215, and drain electrode 216, first pad electrodes 241 and 242, and second pad electrodes 251 and 252 ) can be formed. The thin film transistor Tr may be formed in the display area, and the first pad electrodes 241 and 242 and the second pad electrodes 251 and 252 may be formed in the non-display area.

Although the pad electrode is shown in the drawing to include lower pad electrodes 241 and 251 and upper pad electrodes 242 and 252, the process of forming the thin film transistor (Tr) and the pad electrode is not limited thereto.

For example, as shown in FIG. 4, the first pad electrode may be formed together with the gate line and the gate electrode, and the second pad electrode may be formed together with the data line, the source electrode, and the drain electrode.

That is, a semiconductor layer is formed on the substrate, and a gate insulating film is formed on the semiconductor layer. Additionally, a gate line, a gate electrode, and a first pad electrode may be formed on the gate insulating film. Thereafter, an interlayer insulating film may be formed on the gate line, gate electrode, and first pad electrode, and a contact hole exposing the semiconductor layer may be formed. Additionally, a data line, a source electrode, a drain electrode, and a second pad electrode may be formed on the interlayer insulating film.

At this time, the gate line and the first pad electrode may be formed integrally. The data line and the second pad electrode may be formed integrally. Additionally, the source electrode and drain electrode may be formed on the exposed semiconductor layer.

A protective film 122 is formed on the thin film transistor (Tr), the first pad electrodes 241 and 242, and the second pad electrodes 251 and 252. That is, the data line, the source electrode 215, the drain electrode 216, the first upper pad electrode 542, and the second upper pad electrode 552 form a protective film 122 thereon. The protective film 122 may be formed on the entire surface of the substrate 100.

A planarization film 123 is formed on the protective film 122. The planarization film 123 may be disposed on the thin film transistor (Tr). Additionally, the planarization film 123 may not be formed on the first upper pad electrode 542 and the second upper pad electrode 552. For example, the planarization film 123 may be formed on the entire surface of the substrate 100, and the planarization film 123 formed on the first and second pad electrodes 241 and 242 and 251 and 252 may be removed.

Afterwards, contact holes are formed on the planarization film 123 and the protective film 122. In detail, a contact hole is formed through the protective film 122 and the planarization film 123 to expose the drain electrode 116. Additionally, a plurality of contact holes are formed through the protective film 122 to expose the first upper pad electrode 242 and the second upper pad electrode 252, respectively.

Referring to FIG. 8B, a lower electrode material layer 71 and an upper electrode material layer 72 are sequentially stacked on the planarization film 123 and the protective film 122. The lower electrode material layer 71 and the upper electrode material layer 72 may be formed on the entire surface of the substrate 100 on which the planarization film 123 and the protective film 122 are formed.

The lower electrode material layer 71 may be formed of a material that is not corroded by oxygen and moisture even when exposed to the outside. Additionally, the lower electrode material layer 71 may be formed of a material that is not etched by an etchant that can etch the upper electrode material layer 72. For example, the lower electrode material layer 71 may be formed of any material selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof.

The upper electrode material layer 72 may be formed of a metal with low resistance. For example, the upper electrode material layer 72 is made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium ( It may include any one selected from the group consisting of Ti) and combinations thereof. Preferably, the upper electrode material layer may include copper (Cu).

Afterwards, a photoresist pattern is formed on the upper electrode material layer 72. The photoresist pattern may include a first photoresist pattern 61, a second photoresist pattern 62, a third photoresist pattern 63, and a fourth photoresist pattern 64.

The first photoresist pattern 61 and the second photoresist pattern 62 may be formed in the display area AA. In detail, the first photoresist pattern 61 may be formed in an area where an auxiliary electrode will be formed later. Additionally, the second photoresist pattern 62 may be formed in an area where a connection electrode will be formed later. The second photoresist pattern 62 may be disposed on a contact hole exposing the drain electrode 216 on the planarization film 123 .

The third photoresist pattern 63 and the fourth photoresist pattern 64 may be formed in the non-display area (IA). The third photoresist pattern 63 and the fourth photoresist pattern 64 may be formed in an area where a protective electrode will be formed later. In detail, the third photoresist pattern 63 may be disposed on the first pad electrodes 541 and 542, and the fourth photoresist pattern 64 may be disposed on the second pad electrodes 551 and 552. .

Referring to FIG. 8C, the lower electrode material layer 71 and the upper electrode material layer 72 are etched using the first to fourth photoresist patterns 61 to 64 as masks. Due to this, the first auxiliary electrode 161, the connection electrode 170, the first protective electrode 543, the first dummy layer 45 disposed on the first protective electrode 543, and the second protective electrode 553 and a second dummy layer 55 disposed on the second protective electrode 553 may be formed.

The first auxiliary electrode 161 may include a lower auxiliary electrode layer 161a and an upper auxiliary electrode layer 161b. Additionally, the connection electrode 170 may include a lower connection electrode layer 170a and an upper connection electrode layer 170b.

The first protective electrode 543 and the second protective electrode 553 may be formed of the same material as the lower auxiliary electrode layer 161a and the lower connection electrode layer 170a. That is, the first protective electrode 543, the second protective electrode 553, the lower auxiliary electrode layer 161a, and the lower connection electrode layer 170a may be formed of the lower electrode material layer 71.

The first dummy layer 45 and the second dummy layer 55 may be formed of the same material as the upper auxiliary electrode layer 161b and the upper connection electrode layer 170b. That is, the first dummy layer 45, the second dummy layer 55, the upper auxiliary electrode layer 161b, and the upper connection electrode layer 170b may be formed of the upper electrode material layer 72.

On the first auxiliary electrode 161, the connection electrode 170, the first protective electrode 543, the first dummy layer 45, the second protective electrode 553, and the second dummy layer 55, the first electrode It is formed by sequentially stacking the electrode material layer 73, the second electrode material layer 74, and the third electrode material layer 75. The first electrode material layer 73 to the third electrode material layer 75 may be formed on the entire surface of the substrate 100 .

The first electrode material layer 73 and the third electrode material layer 75 may be formed of a transparent conductive material. For example, the first electrode material layer 73 and the third electrode material layer 75 may be formed of ITO.

The first electrode material layer 73 can improve the adhesion of the second electrode material layer 74. In addition, the third electrode material layer 75 has a large work function, allowing the first electrode of the organic light emitting device to function as an anode electrode in the future.

The second electrode material layer 74 may be formed of a reflective material. The second electrode material layer 74 may be formed of metal or metal alloy. For example, the second electrode material layer 74 may be formed of silver (Ag)-alloy. Through this, the organic light emitting device can implement a top-emitting organic electroluminescence display device that emits light upward.

Photoresist patterns 65 and 66 are formed on the third electrode material layer 75. The photoresist patterns 65 and 66 may be formed in the display area. In detail, the photoresist patterns 65 and 66 may include a fifth photoresist pattern 65 and a sixth photoresist pattern 66.

The fifth photoresist pattern 65 may be disposed on the first auxiliary electrode 161. That is, the fifth photoresist pattern 65 can be formed in the area where the second auxiliary electrode will be formed later.

Additionally, the sixth photoresist pattern 66 may be disposed on the connection electrode 170. That is, the sixth photoresist pattern 66 can be formed in the area where the first electrode of the organic light emitting device will be formed later.

Referring to FIG. 8D, the first electrode material layer ( 73), the second electrode material layer 74 and the third electrode material layer 75 are etched.

At this time, the first electrode material layer 73, the second electrode material layer 74, the third electrode material layer 75, the first dummy layer 45, and the second dummy layer 55 are simultaneously treated with the same etchant. Can be etched. In addition, the first protective electrode 543 and the second protective electrode 553 include the first electrode material layer 73, the second electrode material layer 74, the third electrode material layer 75, and the first dummy. The layer 45 and the second dummy layer 55 are not etched with the etchant.

Thereafter, when the fifth photoresist pattern 65 and the sixth photoresist pattern 66 are removed, the second auxiliary electrode 162 and the first electrode 130 of the organic light emitting device are formed in the display area AA. is formed Additionally, the first dummy layer 45 and the second dummy layer 55 may be removed from the non-display area (IA). That is, the auxiliary electrode 160, the connection electrode 170, the first electrode 130, the first pad part 540, and the second pad part 550 are formed on the planarization film 123 and the protective film 122. It can be completed.

The second auxiliary electrode 162 may include a first auxiliary electrode layer 162a, a second auxiliary electrode layer 162b, and a third auxiliary electrode layer 162c. Additionally, the first electrode 130 may include a first electrode layer 130a, a second electrode layer 130b, and a third electrode layer 130c.

The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the same material. The first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of the first electrode material layer 73.

The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the same material. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of the second electrode material layer 74.

The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the same material. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of the third electrode material layer 75.

That is, the first auxiliary electrode layer 162a and the first electrode layer 130a may be formed of a transparent conductive material. For example, the first electrode layer 130a may be formed of ITO. The second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of metal or metal alloy. For example, the second auxiliary electrode layer 162b and the second electrode layer 130b may be formed of silver (Ag)-alloy. The third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of a transparent conductive material. For example, the third auxiliary electrode layer 162c and the third electrode layer 130c may be formed of ITO.

Referring to FIG. 8E, a bank pattern 139 is formed in the display area AA to expose the top surfaces of the first electrode 130 and the auxiliary electrode 160. Additionally, barrier layers 132 and 133 are formed on the auxiliary electrode 160. The barrier rib layers 132 and 133 include a first barrier layer 132 and a second barrier layer 133, and the first barrier layer 132 may be formed together with the bank pattern 139. Additionally, a second barrier layer 133 is formed on the first barrier layer 132. The second barrier layer 133 may be formed in a reverse tapered shape. The barrier layers 132 and 133 and the bank pattern 139 are formed to be spaced apart from each other.

Unlike the drawings, the barrier layers 132 and 133 may be formed as a single barrier layer. At this time, the barrier layer may be formed in a separate process from the bank pattern 139. That is, the barrier layer may be formed first, and then the bank pattern 139 may be formed. Additionally, the barrier layer may be formed after forming the bank pattern 139. It is sufficient if the barrier layer is formed in a reverse tapered shape. Additionally, the height of the top surface of the barrier layer layers 132 and 133 may be formed to be higher than the height of the top surface of the bank pattern 139.

An organic light-emitting material is formed on the bank pattern 139 and the second barrier layer 133. The organic light-emitting material can be formed into a film with linearity. For example, the organic light-emitting material may be formed by an evaporation method.

As a result, the organic light-emitting material is formed only on the upper surfaces of the bank pattern 139, the first electrode 130, and the second barrier layer 133 exposed by the bank pattern 139. That is, the second barrier layer 133 is formed in a reverse tapered shape, and the organic light emitting material that is deposited in a straight line is formed so as not to contact the side surface of the second barrier layer 133. Additionally, it may not be formed on the top surface of the second auxiliary electrode 162.

An organic light-emitting layer 135 may be formed on the bank pattern and the first electrode 130, and a first dummy layer 134 may be formed on the second barrier layer 133. The organic light-emitting layer 135 and the first dummy layer 134 are formed of the same material.

In the drawing, the organic light emitting layer 135 and the first dummy layer 134 are shown as a single layer, but the present invention is not limited thereto. The organic light-emitting layer 135 and the first dummy layer 134 may be composed of a single layer of a light-emitting material, and may include a hole injection layer, a hole transport layer, and a light-emitting layer ( It may be composed of multiple layers of an emitting material layer, an electron transporting layer, and an electron injection layer.

An electrode material is formed on the organic light emitting layer 135 and the first dummy layer 134. The electrode material can be formed into a film with straight-line properties. For example, the electrode material may be formed by an evaporation method. The electrode material may be formed of a metal or metal alloy with a low work function.

Because of this, the electrode material is formed only on the top surfaces of the organic light-emitting layer 135 and the first dummy layer 134. That is, the second barrier layer 133 is formed in a reverse tapered shape, and the electrode material that is formed to have a straight path is formed so as not to contact the side surface of the second barrier layer 133. Additionally, it may not be formed on the top surface of the second auxiliary electrode 162.

A second electrode 136 may be formed on the top surface of the organic light-emitting layer 135, and a second dummy layer 137 may be formed on the top surface of the first dummy layer 134. The second electrode 136 and the second dummy layer 137 are formed of the same material. In addition, a barrier rib 131 including the first barrier layer 132, the second barrier layer 133, the first dummy layer 134, and the second dummy layer 135 is formed on the auxiliary electrode 160. do.

The conductive layer 180 may be formed to contact the second electrode 136. Additionally, it may be formed to contact the side of the partition wall 131 and the top surface of the auxiliary electrode 160. For example, the conductive layer 180 may be formed using a sputtering method with excellent step coverage.

The conductive layer 180 may be formed of a transparent conductive material. Because of this, the light emitted onto the second electrode 136 can be prevented from being lost. For example, the conductive layer 180 may be formed of IZO.

Accordingly, the second electrode 136 may be electrically connected to the auxiliary electrode 160 through the conductive layer 180. Because the auxiliary electrode 160 reduces the resistance of the second electrode 136 and reduces the voltage drop, current can be transmitted uniformly throughout the display area AA. Because of this, the luminance uniformity of the organic light emitting display device according to the present invention can be improved.

The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, although the description has been made focusing on the embodiments above, this is only an example and does not limit the present invention, and those skilled in the art will understand the above examples without departing from the essential characteristics of the present embodiments. You will be able to see that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the attached claims.

100: substrate
160: Auxiliary electrode
Tr: thin film transistor
OL: Organic light emitting device

Claims (15)

A substrate including a display area and a non-display area;
a thin film transistor disposed on the display area and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode;
an interlayer insulating film disposed above the gate electrode and below the source electrode and the drain electrode;
a protective film positioned on top of the thin film transistor to cover the thin film transistor;
an organic light-emitting device disposed on top of the protective film and including a first electrode, an organic light-emitting layer, and a second electrode; and
At least one pad portion including a pad electrode disposed on the non-display area,
The gate electrode, the source electrode, the drain electrode, and the pad electrode are each made of aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum ( Ta), titanium (Ti), moly titanium (MoTi), and any one selected from the group consisting of combinations thereof,
The protective film is in contact with the pad electrode,
The pad electrode is composed of two or more pad electrode layers, the side surface of the first pad electrode layer of the pad electrode is in contact with the interlayer insulating film, the side surface of the second pad electrode layer of the pad electrode is in contact with the protective film, and the first and second pad electrode layers are in contact with the protective film. An organic electroluminescent display device, wherein the two-pad electrode layer is in contact with each other and includes overlapping first pad portions. According to paragraph 1,
The pad portion is disposed on the pad electrode to overlap the contact hole of the pad electrode, and further includes a protective electrode made of metal. According to paragraph 1,
The first pad electrode layer is formed of the same material on the same layer as the gate electrode,
The second pad electrode layer is formed on the same layer as the source electrode and the drain electrode and is made of the same material. According to paragraph 3,
The gate electrode is an organic light emitting display device formed of multiple layers including a first gate electrode and a second gate electrode disposed on the first gate electrode. According to paragraph 3,
The interlayer insulating film is formed on the gate electrode and the one pad electrode and includes a plurality of contact holes,
The organic electroluminescent display device wherein the contact hole of the interlayer insulating film includes a contact hole exposing the pad electrode in the non-display area. According to paragraph 2,
The organic light emitting display device further includes an auxiliary electrode connected to the second electrode below the second electrode in the display area. According to clause 6,
The auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode,
The first auxiliary electrode includes a lower auxiliary electrode layer and an upper auxiliary electrode layer. In clause 7,
The lower auxiliary electrode layer is formed of the same material as the protective electrode. In clause 7,
The second auxiliary electrode is formed to surround the top and side surfaces of the first auxiliary electrode. In clause 7,
The lower auxiliary electrode layer is formed of any one selected from the group consisting of moly titanium (MoTi), titanium (Ti), and combinations thereof. In clause 7,
The second auxiliary electrode includes a first auxiliary electrode layer, a second auxiliary electrode layer, and a third auxiliary electrode layer. According to paragraph 2,
The source electrode and the drain electrode each include a first metal layer and a second metal layer disposed on the first metal layer,
The first metal layer is made of MoTi or Ti, and the second metal layer is made of Cu. According to clause 12,
The organic electroluminescent display device wherein the first metal layer of the source electrode and the drain electrode is formed of the same material in the same layer as the protective electrode disposed on the pad electrode of the first pad portion. According to paragraph 2,
The protective electrode is aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), moly titanium (MoTi), and An organic electroluminescent display device comprising any one selected from the group consisting of combinations thereof. According to claim 1,
Comprising two or more of the pad portions,
The pad electrode further includes at least one of a second pad portion formed of the same material on the same layer as the gate electrode, and a third pad portion where the pad electrode is formed of the same material on the same layer as the source electrode and the drain electrode. An organic electroluminescence display device.