KR102484892B1 - Transparent display device and method for fabricating thereof - Google Patents

Abstract

The present invention discloses a transparent display device and a manufacturing method thereof. The disclosed transparent display device of the present invention includes a substrate having a display area composed of a transparent portion and a light emitting portion, a first wire crossing the transparent portion and the light emitting portion on the substrate, and provided on the first wire, By including the second wiring exposed to the first wiring, the data line, the voltage reference line, and the power supply voltage line corresponding to the transparent part are made of a transparent metal film, thereby increasing the transparent area of the transparent part without reducing the area of the subpixel. there is

Description

Transparent display device and manufacturing method thereof

The present invention relates to a transparent display device and a manufacturing method thereof.

As the information society develops, the demand for display devices for displaying images is increasing in various forms, and recently, liquid crystal display devices, plasma display devices, and organic light emitting display devices ( Various display devices such as Organic Light Emitting Display Device) have been utilized.

In addition, there is also a demand for a transparent display device using a transparent element and a transparent display panel therefor.

However, if the panel design is changed to increase the transparency of the transparent display panel, the light emitting area is narrowed and the luminous efficiency is lowered. There are problems that can't be solved.

An object of the present invention is to provide a transparent display device in which the transparent area of the transparent portion is enlarged without reducing the area of subpixels by forming the transparent portion and corresponding data lines, voltage reference lines, and power supply voltage lines with transparent metal wires. there is

In addition, in the present invention, the signal line and the voltage line corresponding to the transparent portion are formed as a first wire made of transparent metal, while the signal line and voltage line corresponding to the subpixel including the light emitting portion are formed as a second wire made of an opaque metal. It is another object of the present invention to provide a transparent display device capable of increasing a transparent area while maintaining device life by having a stacked structure of a first wire and a first wire made of a transparent metal.

In addition, in the present invention, a signal line and a voltage line corresponding to a transparent portion are formed as a first wire made of a transparent metal using a halftone mask or a diffraction mask, and a signal line and voltage corresponding to a subpixel including a light emitting portion are formed. Another object of the present invention is to provide a method of manufacturing a transparent display device capable of increasing a transparent area without increasing a process by making the line have a stacked structure of a second wiring made of an opaque metal and a first wiring made of a transparent metal. .

A transparent display device of the present invention to solve the above problems of the prior art is a substrate having a display area composed of a transparent portion and a light emitting portion, a first wiring crossing the transparent portion and the light emitting portion on the substrate, the first It is provided on the wiring and includes a second wiring in which the first wiring is exposed in the transparent portion.

Here, the first and second wires are at least one of a data line, a voltage reference line, and a power supply voltage line, a black matrix is disposed in an area corresponding to the second wire, and the light emitting unit is white (W), red ( R), green (G), and blue (B) units, the second wiring is an opaque metal, the first wiring is a transparent metal, and the width of the exposed first wiring corresponding to the transparent part is A plurality of metal patterns are provided on the exposed first wiring, which is larger than the width of the second wiring and corresponds to the transparent portion, and the plurality of metal patterns are made of the same opaque metal as the second wiring, thereby forming the transparent portion and the transparent portion. Corresponding data lines, voltage reference lines, and power supply voltage lines are made of transparent metal films, so that there is an effect of increasing the transparent area of the transparent portion without reducing the area of the subpixel.

In addition, the method of manufacturing a transparent display device of the present invention includes providing a substrate having a display area in which a transparent part and a light emitting part are defined, forming a first wire crossing the transparent part and the light emitting part, and the first wire crossing the transparent part and the light emitting part. forming a second wire so that the first wire is exposed in a region corresponding to the transparent portion while overlapping with the wire, so that the data line, the voltage reference line, and the power supply voltage line corresponding to the transparent portion are formed through a transparent metal film; As a result, there is an effect of increasing the transparent area of the transparent portion without reducing the area of the subpixel.

In the transparent display device according to the present invention, the data line, the voltage reference line, and the power supply voltage line corresponding to the transparent part are formed of transparent metal wires, so that the transparent area of the transparent part is increased without reducing the area of the subpixel. .

In addition, in the transparent display device according to the present invention, signal lines and voltage lines corresponding to the transparent portion are formed as first wires made of transparent metal, while signal lines and voltage lines corresponding to subpixels including the light emitting portion are made of opaque metal. By having a laminated structure of the second wiring made of metal and the first wiring made of transparent metal, there is an effect of increasing the transparent area while maintaining the life of the device.

In addition, in the method of manufacturing a transparent display device according to the present invention, a signal line and a voltage line corresponding to a transparent part are formed as a first wire made of a transparent metal using a halftone mask or a diffraction mask, and a subpixel including a light emitting part is formed. The signal line and the voltage line corresponding to have an opaque metal second wiring and a transparent metal first wiring, so that the transparent area can be increased without increasing the process.

1 is a schematic system configuration diagram of a transparent display device according to the present invention.
2 is a plan view illustrating a pixel structure of a transparent display device according to the present invention.
FIG. 3 is a cross-sectional view taken along the line II' of FIG. 2. Referring to FIG.
FIG. 4 is a cross-sectional view taken along line II-II' of FIG. 2 .
FIG. 5A is a plan view and cross-sectional view of area A of FIG. 2 .
FIG. 5B is a plan view and a cross-sectional view of region B of FIG. 2 .
6A to 6E are diagrams illustrating manufacturing processes of regions A and B of FIG. 2 .
FIG. 7 is a diagram showing structures of area A and area B among the data lines of FIG. 2 according to another embodiment of the present invention.
8A and 8B are diagrams showing another embodiment of the present invention for region A of 2 above.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only the present embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative, so the present invention is not limited to the details shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted.

When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts.

In the case of a description of a temporal relationship, for example, when a temporal precedence relationship is described as 'after', 'continue to', 'after ~', 'before', etc., 'immediately' or 'directly' As long as ' is not used, non-continuous cases may also be included.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each embodiment can be implemented independently of each other or can be implemented together in a related relationship. may be

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. And in the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numbers indicate like elements throughout the specification.

1 is a schematic system configuration diagram of a transparent display device according to the present invention.

Referring to FIG. 1 , a transparent display device 100 according to the present invention includes a plurality of data lines DL to DLm and a plurality of gate lines GL1 to GLn, and a plurality of sub pixels. The disposed transparent display panel 110, a data driver 120 driving a plurality of data lines DL to DLm, a gate driver 130 driving a plurality of gate lines GL1 to GLn, and a data driver 120 and a timing controller 140 controlling the gate driver 130; Here, the data driver 120 and the gate driver 130 correspond to drivers for driving subpixels.

The data driver 120 drives the plurality of data lines by supplying data voltages to the plurality of data lines.

The gate driver 130 sequentially drives the plurality of gate lines by sequentially supplying scan signals to the plurality of gate lines.

The timing controller 140 controls the data driver 120 and the gate driver 130 by supplying various control signals to the data driver 120 and the gate driver 130 .

The timing controller 140 starts scanning according to the timing implemented in each frame, converts externally input image data according to the data signal format used by the data driver 120, and outputs the converted image data. , data drive is controlled at an appropriate time according to the scan.

Under the control of the timing controller 140, the gate driver 130 sequentially supplies scan signals of an on voltage or an off voltage to a plurality of gate lines to sequentially drive the plurality of gate lines.

The gate driver 130 may be located on only one side of the transparent display panel 110, as shown in FIG. 1, or may be located on both sides depending on the driving method or design method of the transparent display panel.

In addition, the gate driver 130 may include one or more gate driver integrated circuits.

Each gate driver integrated circuit is connected to a bonding pad of the transparent display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method, or is connected to a gate in panel (GIP) method. ) type and may be directly disposed on the transparent display panel 110 or, in some cases, may be integrated and disposed on the transparent display panel 110 .

Each gate driver integrated circuit may be implemented in a Chip On Film (COF) method. In this case, a gate driving chip corresponding to each gate driver integrated circuit may be mounted on a flexible film, and one end of the flexible film may be bonded to the transparent display panel 110 .

When a specific gate line is opened, the data driver 120 converts the image data received from the timing controller 140 into analog data voltages and supplies them to a plurality of data lines, thereby driving the plurality of data lines.

The data driver 120 may drive a plurality of data lines including at least one source driver integrated circuit.

Each source driver integrated circuit is connected to a bonding pad of the transparent display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method, or is connected to the transparent display panel 110 ), or, in some cases, may be integrated and arranged on the transparent display panel 110 .

In addition, each source driver integrated circuit may be implemented in a Chip On Film (COF) method. In this case, a source driving chip corresponding to each source driver integrated circuit is mounted on a flexible film, one end of the flexible film 121 is bonded to at least one source printed circuit board, and the other end is bonded to at least one source printed circuit board. It is bonded to the transparent display panel 110 .

The source printed circuit board is connected to the control printed circuit board through a connection medium such as a flexible flat cable (FFC) or a flexible printed circuit (FPC).

A timing controller 140 is disposed on the control printed circuit board.

On the control printed circuit board, a power controller (not shown) is further disposed to supply various voltages or currents to the transparent display panel 110, the data driver 120, and the gate driver 130 or to control various voltages or currents to be supplied. It can be.

The source printed circuit board and the control printed circuit board mentioned above may be a single printed circuit board.

The transparent display device 100 according to the present embodiments may be a liquid crystal display device, an organic light emitting display device, or the like. However, below, for convenience of explanation, it is assumed that the transparent display device 100 is an organic light emitting display device.

Meanwhile, the transparent display panel 110 includes a transparent area with a plurality of transparent portions and an opaque area that is not transparent.

In the transparent area, a plurality of transparent units are arranged in a matrix type.

Here, in relation to the arrangement of a plurality of transparent parts in a matrix type, several transparent parts arranged in the same row are referred to as one transparent part row, and several transparent parts arranged in the same column are referred to as one transparent part. It is called the sub-heat.

The opaque area is composed of an emitting area (EA) in which light is emitted and a non-emitting area (NEA) in which no light is emitted.

A column line area (CLA) in which column lines are disposed may exist in the non-emitting portion. 2 shows data lines (Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4, ...). ..) can be.

The column wiring area is an area between the transparent part and the light emitting part row. That is, the column wires are disposed between each pair of transparent and light emitting unit columns.

Column wires include data lines, various voltage wires, and the like disposed in a column direction.

The light emitting unit may be defined by each subpixel.

Each subpixel may be, for example, a red subpixel emitting red light, a green subpixel emitting green light, or a blue subpixel emitting blue light. In some cases, red, It may be a subpixel that emits light of a color other than green and blue (eg, white, yellow, etc.).

Each sub-pixel includes a light emitting unit that emits light of a corresponding color and a circuit unit in which circuit elements such as transistors are disposed to emit light from the light emitting unit.

For example, when there are subpixels of three colors (first color, second color, and third color) in the transparent display panel 110 according to the present invention, the first color subpixel emits light of the first color. The second color subpixel may include a second color light emitting part and a second color circuit part, and the third color subpixel may include a third color light emitting part and a third color circuit part. there is.

For another example, when subpixels of four colors (first color, second color, third color, and fourth color) exist in the transparent display panel 110 according to the present invention, the first color subpixel includes a first color light emitting part and a first color circuit part, a second color subpixel includes a second color light emitting part and a second color circuit part, and a third color subpixel includes a third color light emitting part and a third color circuit part. A circuit unit may be included, and the fourth color subpixel may include a fourth color light emitting unit and a fourth color circuit unit.

The light emitting part of each sub-pixel may mean an area emitting light of a corresponding color for each sub-pixel, may mean a pixel electrode (eg, anode) present in each sub-pixel, or may mean an area where a pixel electrode is disposed You may.

The circuit unit of each sub-pixel may refer to a circuit including a transistor that supplies voltage or current to a pixel electrode of each sub-pixel so that the light emitting unit emits light, or may refer to a region where such a circuit is disposed.

In the transparent display panel 110 according to embodiments of the present invention, a light emitting part of at least one color subpixel among subpixels of various colors (eg, white, red, green, blue, etc.) is located in the column wiring area. can do.

For example, when subpixels of four colors are disposed in the transparent display panel 110 according to the present invention, among the first color light emitting part, the second color light emitting part, the third color light emitting part, and the fourth color light emitting part At least one may be located in the column wiring area or may be positioned overlapping with the column wiring area.

As described above, the viewing angle, light emitting area, transmission area, etc. of the transparent display panel 110 can be widened by positioning the light emitting parts of the subpixels of at least one color in the column wiring area or overlapping the column wiring area. .

Meanwhile, in the transparent display panel 110 according to the present invention, a plurality of subpixels may be disposed in a WRGB structure, and a structure in which two pixels are composed of four subpixels (hereinafter referred to as a “2P-4SP structure”) A number of subpixels may be arranged as

When a plurality of subpixels are arranged in a 2P-4SP structure in the transparent display panel 110 according to the present invention, the same resolution can be similarly expressed with a smaller number of subpixels than in the WRGB structure. In particular, transparency of the transparent display panel 110 can be improved by reducing the number of subpixels.

When a plurality of subpixels are arranged in a 2P-4SP structure in the transparent display panel 110 according to the present invention, a subpixel rendering technique may be used.

A 2P-4SP structure applied to the transparent display panel 110 according to embodiments of the present invention may include, for example, an RG-BG structure and an RG-BW structure.

2 is a plan view illustrating a pixel structure of a transparent display device according to the present invention.

Referring to FIG. 2 together with FIG. 1 , the transparent display panel 110 according to the present invention includes a plurality of transparent portions TA ji, j (row number) = 1, 2, ..., i (column number) = 1, 2, 3, ...) are arranged in a matrix type.

In the transparent display panel 110 according to the present invention, a sub-pixel row exists between rows of the transparent part.

For example, between the first transparent part row (TA 11, TA 12, TA 13, TA 14, ) and the second transparent part row (TA 21, TA 22, TA 23, TA 24, ...), WRGB Sub-pixel rows (W11, R12, G13, B14, ...) are arranged. Each subpixel is composed of white (W), red (R), green (G), and blue (B) subpixels, and these may be defined as one pixel.

Similarly, between the second transparent row (TA 21, TA 22, TA 23, TA 24, ...) and the third transparent row, WRGB subpixel rows (W21, R22, G23, B24, ...) this is placed

In the transparent display panel 110 according to the present invention, each subpixel is divided into an emitting area (EA) and a non-emitting area (NEA), and a circuit controlling the emitting area EA is the light emitting area. It is located below (EA) and in the non-emission area (NEA).

In addition, in the present invention, the subpixels W11, W21/R12, R22/G13, G23/B14, and B24 and the transparent part columns TA11, TA21/TA12, TA22/TA13, TA23/TA14, and TA24 in a vertical column direction ) is placed.

Data lines Vdata1 and Vdata2 are interposed between the subpixels W11, W21/R12, R22/G13, G23/B14, and B24 and the transparent portion columns TA11, TA21/TA12, TA22/TA13, TA23/TA14, and TA24. , Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are alternately arranged.

In the present invention, the column wiring disposed in the column of the transparent part and the light emitting part is formed in a structure in which a first wiring and a second wiring are stacked, the first wiring is formed of a transparent conductive material (metal), and the second wiring is opaque. made of metal In particular, column wiring (data lines (Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4, etc.), the transparent area of the transparent portion is increased by removing the second wire on the first wire, exposing the first wire, and making the wires partitioning the transparent portion transparent.

For example, data located in the first transparent part row (TA 11, TA 12, TA 13, TA 14,..) and the second transparent part row (TA 21, TA 22, TA 23, TA 24,..) Lines (Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are made of transparent conductive material. It is formed in a structure in which the first wiring is exposed.

On the other hand, the data lines (W11, R12, G13, B14, ...) and the data lines (W21, R22, G23, B24, ...) located in the first WRGB sub-pixel row (W11, R12, G13, B14, ...) including the emitter Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are opaque conductive materials (metal) A second wire made of a transparent conductive material and a first wire made of a transparent conductive material are formed in a laminated structure.

Therefore, in the transparent display panel 110 of the present invention, the non-emission area NEA of the WRGB subpixels, the data lines Vdata1, Vdata2, Vdata3, Vdata4, ... corresponding to the WRGB subpixels, and the voltage reference The black matrix BM is disposed only in regions of the color filter substrate corresponding to portions of the lines Vref1, Vref2, Vref3, Vref4, ... and power voltage lines VDD1, VDD2, VDD3, VDD4, ....

As described above, in the present invention, the area of the transparent portion can be increased without reducing the light emitting area of the subpixel, so that the transmittance can be improved without reducing the lifespan of the organic light emitting display device.

In addition, in the present invention, since part of the second wiring (opaque metal film) of the data line, voltage reference line, and power supply voltage line in the region corresponding to the transparent part is removed, the transmission area of the organic light emitting display device can be increased without an additional mask process. There is an effect.

FIG. 3 is a cross-sectional view taken along line I-I' in FIG. 2, and FIG. 4 is a cross-sectional view taken along line II-II' in FIG.

Referring to FIGS. 3 and 4 together with FIG. 2 , the organic light emitting display device of the present invention includes a plurality of WRGB subpixels (W11, R12, G13, B14,...W21, R22, G23, B24,... .) and a plurality of transparent parts (TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, ...) for each subpixel.

The array substrate of the organic light emitting display device includes a first substrate 200 formed of a transparent insulating substrate, and white (W11), red (R12), green (G13), and blue (B14) colors on the first substrate 200. A driving switching element (TFT: Thin Film Transistor) is disposed in each region in which subpixels are partitioned, and a first electrode 261, an organic light emitting layer 262, and a second electrode 263 are formed on the driving switching element TFT. A configured organic light emitting diode 264 is disposed.

On the other hand, in the region where the plurality of transparent parts (TA 11, TA 12, TA 13, TA 14,... TA 21, TA 22, TA 23, TA 24,...) are formed, the gate is on the first substrate 200. An insulating film 202 and a protective film 204 are stacked, and on the protective film 204, data lines (Vdata1, Vdata2, Vdata3, Vdata4, ...), voltage reference lines (Vref1, Vref2, Vref3, Vref4, ...) ) and power voltage lines (VDD1, VDD2, VDD3, VDD4, ...) are disposed.

A planarization film is formed on the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ..), voltage reference lines (Vref1, Vref2, Vref3, Vref4, ..) and power voltage lines (VDD1, VDD2, VDD3, VDD4, ..) 206 and the planarization film 206, a bank layer 270 partitioning each transparent part, an organic light emitting layer 262, and a second electrode 263 of an organic light emitting diode are disposed in each transparent part region.

That is, the first electrode 261 of the organic light emitting diode formed in the sub-pixel area is not disposed in the transparent portion of the organic light emitting display device, and the organic light emitting layer 262 and the second electrode 263 are stacked.

In addition, the color filter substrate facing the array substrate and bonded with the encapsulation layer 260 therebetween is a black matrix (BM: Black Matrix) partitioning WRGB subpixels on the second substrate 301 made of a transparent insulating substrate is formed, and a white (W) color filter layer (W CF), a red (R) color filter layer (RC CF), and a green (G) color filter layer (G CF) are formed in the subpixel area partitioned by the black matrix (BM). and a blue (B) color filter layer (B CF).

The driving switching element TFT includes a gate electrode G, a gate insulating layer 202, an active layer ACT, a protective layer 204, a drain electrode D, and a source electrode S, and includes subpixels and The transparent parts are partitioned by the bank layer 270 .

In addition, the subpixels of the present invention and the transparent parts corresponding to the subpixels, that is, the subpixels W11, W21/R12, R22/G13, G23/B14, and B24 disposed in the vertical column direction are transparent. Between the sub-columns (TA11, TA21/TA12, TA22/TA13, TA23/TA14, TA24), data lines (Vdata1, Vdata2, Vdata3, Vdata4,...), voltage reference lines (Vref1, Vref2, Vref3, Vref4,... ) and power voltage lines (VDD1, VDD2, VDD3, VDD4, ...) are alternately arranged.

In particular, in the present invention, the data lines (Vdata1, Vdata2, Vdata3, Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are made of transparent conductive materials (ITO, IZO, ITZO). Formed as a single-layer wiring, the transparent area of the transparent portion is increased.

Therefore, the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ...) corresponding to the WRGB subpixels (W11, R12, G13, B14, ... W21, R22, G23, B24, ...) of the present invention, The voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and the power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are connected to a first wiring made of a transparent conductive material (ITO, IZO, ITZO) and an opaque conductive material. A column wiring having a laminated structure of second wirings made of material is formed.

Therefore, in the present invention, it is possible to increase the transparent area of the transparent portion without reducing the area of subpixels, thereby improving the aperture ratio characteristics of the transparent portion while maintaining device life.

<Method of manufacturing transparent display device>

A manufacturing method of the transparent display device according to the present invention will be described.

First, in order to manufacture an array substrate, a first substrate 200 made of a transparent insulating substrate is provided, a gate metal film is formed on the first substrate 200 through a sputtering process, and then a photolithography process is performed. and patterning through an etching process to form a gate electrode (G) of the driving switching element (TFT), a gate line (not shown) connected to the gate electrode (G), and a gate pad (not shown) connected to the end of the gate line. form

The gate metal layer may include aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (molybdenum); Mo), titanium (Ti), platinum (Pt), tantalum (Ta), and the like may be formed as at least one layer.

In addition, a multilayer structure in which a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) and an opaque conductive material may be stacked may be formed.

Although the driving switching element TFT is formed above, since a plurality of switching elements are disposed in each pixel area of the organic light emitting display device, when forming the gate electrode G of the driving switching element TFT, other switching elements A gate electrode is also formed together.

As described above, when the gate electrode G is formed for each subpixel, a gate insulating film 202 made of silicon oxide (SiO2) or silicon nitride (SiNx) is formed by a chemical vapor deposition (CVD) process on the first substrate (200). ) is formed on the front of the

Then, a semiconductor layer is formed on the entire surface of the first substrate 200 on which the gate insulating film 202 is formed, and patterned through a photolithography process and an etching process to correspond to the gate electrode G of the driving switching element TFT. An active pattern ACT is formed on the gate insulating layer 202 .

The semiconductor layer may be amorphous silicon or crystalline silicon. In addition, the semiconductor layer may be formed of an oxide semiconductor layer.

The oxide semiconductor layer may be formed of an amorphous oxide containing at least one of indium (In), zinc (Zn), gallium (Ga), or hafnium (Hf). For example, when forming a Ga-In-Zn-O oxide semiconductor by a sputtering process, each target formed of In2O3, Ga3O3, and ZnO may be used, or a single target of Ga-In-Zn oxide may be used. In addition, when forming an hf-In-Zn-O oxide semiconductor by a sputtering process, each target formed of HfO2, In2O3, and ZnO or a single target of Hf-In-Zn oxide may be used. can

Then, a protective film 204 made of silicon oxide (SiO2) or silicon nitride (SiNX) is formed on the entire surface of the first substrate 200 on which the active pattern (ACT) is formed, and the protective film 204 is formed through a photolithography process and an etching process. A contact hole process exposing a part of the active pattern ACT is performed.

As described above, when the contact hole is formed on the protective film 204, a source/drain metal film is formed on the entire surface of the first substrate 200, and the source and drain electrodes S and D are formed through a photolithography process and an etching process. form

The source electrode S and the drain electrode D are electrically connected to the active pattern ACT through a contact hole formed in the passivation layer 204 .

The source/drain metal layer includes a first metal layer made of a transparent conductive material such as indium-tin-oxide, indium-zinc-oxide, tungsten (WO), or ITZO. , aluminum (Al), aluminum alloy, tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), titanium, platinum, tantalum, such as a low resistance opaque conductive material of the second It is formed by laminating metal films.

Then, source and drain electrodes S and D are formed according to a mask process using a halftone mask or a diffraction mask.

In addition, when the source and drain electrodes S and D are formed, data lines Vdata1, Vdata2, Vdata3, Vdata4, .., voltage reference lines Vref1, Vref2, Vref3, Vref4, ..) and power voltage lines ( VDD1, VDD2, VDD3, VDD4,..), pads (not shown) formed on these lines are formed at the same time.

In particular, in the present invention, by using a halftone mask or a diffraction mask, the WRGB subpixels W11, R12, G13, and B14 and corresponding data lines Vdata1, Vdata2, Vdata3, Vdata4, .., voltage reference line Vref1 , Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are formed by stacking a first wire made of the first metal film and a second wire made of the second metal film. form into a structure

On the other hand, the transparent parts (TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, ...) and the corresponding data lines (Vdata1, Vdata2, Vdata3, Vdata4,. .), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) are first wires made of transparent conductive material (ITO, IZO, ITZO). The transparent area of the transparent portion is increased by removing the second wire formed of the opaque metal on the upper portion.

Therefore, in the area corresponding to the transparent parts (TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, ...) according to the halftone mask or diffraction mask process, the data Lines (Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3, VDD4,..) A process of removing the metal film is performed. (More specific processes will be described with reference to FIGS. 6A to 6E).

As described above, when the source and drain electrodes S and D are formed on the first substrate 200, an organic insulating material such as an acrylic organic compound, benzo-cyclo-butene (BCB) or perfluorocyclobutane (PFCB) A planarization film 206 made of material is formed on the entire surface.

Then, a mask process is performed to form a contact hole exposing the source electrode S of the driving switching element TFT in the planarization layer 206 .

As described above, when a contact hole is formed in the planarization film 206, aluminum (Al), silver (Ag) or an alloy thereof is formed on the first substrate 200 by a sputtering method, followed by a photolithography process and an etching process Through this, the first electrode 261 of the organic light emitting diode 264 serving as an anode is formed in units of white (W), red (R), green (G), and blue (B) subpixels.

At this time, the first electrode 261 is not formed in a region corresponding to the transparent portions TA11, TA12, TA13, TA14, ... TA21, TA22, TA23, TA24, ....

The first electrode 261 is electrically connected to the source electrode S of the driving switching element TFT through a contact hole formed on the planarization layer 206 .

As described above, when the first electrode 261 of the organic light emitting diode 264 is formed on the planarization layer 206, an organic layer is formed on the entire surface of the first substrate 200, and then the white (W), The bank layer 270 is formed to expose the first electrode 261 in the red (R), green (G), and blue (B) subpixels.

As described above, when the bank layer 270 is formed on the first substrate 200, the first electrodes 261 of the white (W), red (R), green (G), and blue (B) subpixels are formed. An organic light emitting layer 262 is formed thereon. The organic light emitting layer 262 is sequentially deposited on the first electrode 261 by sequentially depositing a hole injection layer material, a hole transport layer material, a light emitting layer material, an electron transport layer material, and an electron injection layer material through a thermal evaporation process. An organic light emitting layer 262 including a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) is formed.

The light emitting layer EML may be formed of a light emitting layer emitting white (W) light or a light emitting layer emitting white (W) light by stacking red (R), green (G), and blue (B) light emitting layers. can

As described above, when the organic light emitting layer 262 is formed on the first substrate 200, the second electrode 263 serving as a cathode is formed on the entire surface of the first substrate 200, so that the organic light emitting diode 264 ) to form

At this time, the bank layer 270 is formed on the planarization film 206 in the transparent portions TA11, TA12, TA13, TA14,...TA21, TA22, TA23, TA24,..., and the organic light emitting diode 264 ) of the organic light emitting layer 262 and the second electrode 263 are laminated.

The second electrode 263 is formed of a transparent conductive material film to transmit light generated from the organic light emitting layer 262. The transparent conductive material film is made of tin oxide (TO) or indium tin oxide (Indium Tin Oxide). Tin Oxide: ITO), Indium Zinc Oxide: IZO, or Indium Tin Zinc Oxide: ITZO.

As described above, when the array substrate composed of the driving switching element (TFT) and the organic light emitting diode 264 is completed, as follows, the white (W), red (R), green (G), and blue (B) color filter layers ( A color filter substrate composed of W CF, R CF, G CF, and B CF) is formed.

The color filter substrate used in the transparent display device of the present invention is a non-emission area (NEA) of the WRGB subpixels (W11, R12, G13, B14, ... W21, R22, G23, B24, ...) of the array substrate. A black matrix BM is formed on the second substrate 301 corresponding to the 24, ...), the black matrix BM is not formed in the corresponding region.

Then, a white (W) color filter layer (W) is formed between the WRGB subpixels (W11, R12, G13, B14,..., W21, R22, G23, B24,...) and the corresponding black matrix (BM). CF), a red (R) color filter layer (RC CF), a green (G) color filter layer (G CF), and a blue (B) color filter layer (B CF) are formed to complete the color filter substrate.

As described above, when the color filter substrate is completed, the array substrate and the encapsulation layer 260 are bonded together to complete the organic light emitting display device.

As described above, in the transparent display device according to the present invention, the data line, the voltage reference line, and the power supply voltage line corresponding to the transparent portion expose the first wire made of transparent metal, thereby reducing the area of the subpixel including the light emitting portion. It has the effect of widening the transparent area of the transparent part without reducing it.

In addition, in the transparent display device according to the present invention, the signal line and voltage line corresponding to the transparent part are formed of a transparent metal film, while the signal line and voltage line corresponding to the subpixel have a laminated structure of opaque metal and transparent metal. , there is an effect of expanding the transparent area while maintaining the life of the device.

FIG. 5A is a plan view and cross-sectional view of area A of FIG. 2 , and FIG. 5B is a plan view and cross-sectional view of area B of FIG. 2 .

Here, the first data line among the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ..) of FIG. 2 will be mainly described, but the other data lines and the voltage reference lines (Vref1, Vref2, Vref3, Vref4, ..) The same applies to the power supply voltage lines (VDD1, VDD2, VDD3, VDD4, ...).

Referring to FIGS. 5A and 5B together with FIGS. 3 and 4 , in the organic light emitting display device of the present invention, the WRGB subpixels W11, R12, G13, and B14 and the corresponding data line Vdata1 are made of transparent metal. The first wire ML1 and the second wire ML2 made of an opaque metal are stacked, and the data line Vdata1 located in the transparent portions TA 11 is formed by removing the second wire ML2 to form a second wire ML2. 1 wire (ML1) has a single layer structure exposed to the outside. (Area A is the data line of the transparent area, and Area B is the data line of the sub-pixel area)

Looking at the cross-sectional view of region A, in the transparent region, a gate insulating film 202 and a protective film 204 are stacked on a first substrate 200, and a first wire (made of a transparent conductive material) is formed on the protective film 204. A data line Vdata1 formed of ML1) is formed.

Looking at the cross-sectional view of region B, the data lines are the same as the data line Vdata1 of region A, but on the protective layer 204, a first wire ML1 made of a transparent conductive material and a second wire ML2 made of an opaque conductive material are formed. ) can be seen that the data line Vdata1 is formed in a stacked structure.

Therefore, in the present invention, data lines (Vdata1, Vdata2, Vdata3, Vdata4,..), voltage reference lines (Vref1, Vref2, Vref3, Vref4,..) and power voltage lines (VDD1, VDD2, VDD3) corresponding to the transparent part in the present invention. , VDD4, ..) all of which are made of transparent metal are exposed so that the transparent area of the transparent portion is increased.

6A to 6E are diagrams illustrating manufacturing processes of regions A and B of FIG. 2 .

6A to 6E are specific manufacturing processes for using a halftone mask or a diffraction mask in the process of forming the source and drain electrodes S and D in FIGS. 3 and 4 . Therefore, based on the manufacturing process of the organic light emitting display of FIGS. 3 and 4 , the differentiated parts will be mainly described.

Referring to FIGS. 6A and 6B , first and second metal films L1 and L2 serving as source/drain metal films are formed on the first substrate 200 on which the protective film 204 is formed in the manufacturing process of the transparent display device according to the present invention. If formed continuously, a photoresist is formed on the first substrate 200, and then an exposure and development process is performed to form a first photoresist film 400 on the second metal film L2.

The first metal layer (L1) is a transparent conductive material such as indium-tin-oxide (In-Tin-Oxide), indium-zinc-oxide (In-Zinc-Oxide), tungsten (WO), ITZO, The second metal film L2 is an opaque material such as aluminum (Al), aluminum alloy, tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), titanium, platinum, tantalum, etc. is a conductive material.

The first photoresist film 300 is formed of first and second photoresist film patterns 400a and 400b having different thicknesses, wherein the first photoresist film pattern 400a of area B corresponding to the subpixel corresponds to the transparent portion. It is formed thicker than the second photoresist film pattern 400b in area A.

As described above, when the first photoresist film 400 is formed on the first substrate 200, an etching process is performed to form a preliminary data line composed of the stacked first and second wires ML1 and ML2.

Then, an ashing process is performed to remove the second photoresist film pattern 400b in region A to expose the second wiring ML2 to the outside. At this time, the second photoresist film pattern 400a in region B becomes the second photoresist film 402 whose thickness is reduced through the ashing process.

As described above, when the second metal film ML2 of the transparent portion is exposed to the outside, an etching process is performed to remove the second wiring ML2 on the first wiring ML1, and an ashing process is performed to obtain region B ( A data line Vdata is formed by removing the second photoresist film 402 remaining in the subpixel.

Therefore, in the present invention, the data line Vdata located in the sub-pixel area has a structure in which the first and second wires ML1 and ML2 are stacked, and the data line Vdata located in the transparent area has a structure in which the first and second wires ML1 and ML2 are stacked. It consists of one wire (ML1), and the transparent area of the transparent part is increased.

In addition, in the present invention, without an additional mask process, portions of the data line, power supply voltage line, and voltage reference line corresponding to the transparent portion are exposed so that the first wiring made of transparent metal is exposed, and the data line corresponding to the subpixel including the light emitting portion, Portions of the power voltage line and the voltage reference line may be formed such that a second wire made of an opaque metal and a first wire made of a transparent metal are stacked.

7 is a diagram showing the structure of area A and area B of the data line of FIG. 2 according to another embodiment of the present invention, and FIGS. 8A and 8B are another embodiment of the present invention for area A of 2. is a drawing showing

7 to 8B, the data line Vdata1 disposed in the organic light emitting display device of the present invention has a structure in which a first wiring ML1 and a second wiring ML2 are stacked in a subpixel area, In the transparent portion area, the second wiring ML2 is formed of the removed first wiring ML1.

Also, the width D1 of the data line in the sub-pixel area and the width D2 of the data line in the transparent area may be formed to be different from each other. In particular, since the data line formed in the transparent region is formed of the first wire ML1 of a transparent conductive material having high resistance, the area of the data line is widened to reduce resistance.

On the other hand, in the data line formed in the sub-pixel area, since the first wire ML1 of a transparent conductive material and the second wire ML2 of a low-resistance opaque conductive material are stacked, the width D1 of the data line is narrowed to reduce the emission area. secured.

In addition, among the data lines formed in the transparent display device of the present invention, the data line formed in the transparent portion forms a plurality of first metal patterns MP1 in a dot shape on the first wire ML1, There is an effect of reducing the resistance of the data line corresponding to the transparent part.

As shown in FIG. 8A , it can be seen that a plurality of first metal patterns MP1 are formed at predetermined intervals on the transparent first wire ML1 of the data line Vdata1 formed in the transparent portion region of the present invention. .

Looking at the cross-sectional view of the transparent region, a gate insulating film 202 and a protective film 204 are stacked on a first substrate 200, and a first wire ML1 and the first wire (ML1) are stacked on the protective film 204. It can be seen that a plurality of first metal patterns MP1 are formed on ML1 at predetermined intervals.

Also, referring to FIG. 8B , it can be seen that a plurality of second metal patterns MP2 are formed on the transparent first wire ML1 of the data line Vdata1 formed in the transparent portion region of the present invention.

The second metal pattern MP2 may include a plurality of slit patterns parallel to the data line Vdata1, and the slit patterns constituting the second metal pattern MP2 are data lines formed in adjacent subpixel areas. It may be formed integrally with or separated from the second wire ML2 of the .

Looking at the cross-sectional view of the transparent portion region, a gate insulating layer 202 and a protective layer 204 are stacked on the first substrate 200, and a first wire ML1 and the first wire ML1 are formed on the protective layer 204. It can be seen that a plurality of second metal patterns MP1 are formed on the wiring ML1 at predetermined intervals.

As described above, in the transparent display device according to the present invention, the data line, the voltage reference line, and the power supply voltage line corresponding to the transparent portion are formed of transparent metal wires, thereby increasing the transparent area of the transparent portion without reducing the area of the subpixel. It works.

In addition, in the transparent display device according to the present invention, signal lines and voltage lines corresponding to the transparent portion are formed as first wires made of transparent metal, while signal lines and voltage lines corresponding to subpixels including the light emitting portion are made of opaque metal. By having a laminated structure of the second wiring made of metal and the first wiring made of transparent metal, there is an effect of increasing the transparent area while maintaining the life of the device.

100: transparent display device
120: gate driver
130: data driver
140: timing controller
200: first substrate
202: gate insulating film
204: shield
206: planarization film
261: first electrode
262: organic light emitting layer
263: second electrode

Claims (14)

a substrate having a display area including a transparent portion and a light emitting portion, and including a planarization film disposed on the transparent portion and the light emitting portion;
a first wiring made of a transparent metal crossing the transparent part and the light emitting part on the substrate; and
It is provided on the first wiring and includes a second wiring of opaque metal in which the first wiring is exposed in the transparent portion,
It includes a plurality of subpixels located in the display area,
Each of the plurality of subpixels includes an organic light emitting diode and a driving switching element electrically connected to a first electrode of the organic light emitting diode through a contact hole formed in the planarization layer;
The source electrode of the driving switching element is positioned such that the opaque metal overlaps the transparent metal,
The contact hole exposes at least a portion of the opaque metal positioned on the transparent metal,
The transparent display device of claim 1 , wherein a width of the first wire disposed in the transparent portion is greater than widths of the first wire and the second wire disposed to be stacked on the light emitting portion.
The transparent display device of claim 1 , wherein the first and second wires are at least one of a data line, a voltage reference line, and a power supply voltage line.
The transparent display device of claim 1 , wherein a black matrix is disposed in an area corresponding to the second wiring.
The transparent display device of claim 1 , wherein the light emitting units are disposed in units of white (W), red (R), green (G), and blue (B) colors.
delete delete The transparent display device of claim 1 , wherein a plurality of metal patterns are provided on the exposed first wire corresponding to the transparent portion.
The transparent display device of claim 7 , wherein the plurality of metal patterns are made of the same opaque metal as the second wiring.
providing a substrate having a display area including a transparent portion and a light emitting portion, and including a planarization film disposed on the transparent portion and the light emitting portion;
forming a first wire of transparent metal crossing the transparent part and the light emitting part; and
forming a second wiring made of an opaque metal so that the first wiring is exposed in a region corresponding to the transparent portion while overlapping the first wiring;
A plurality of subpixels are located in the display area,
Each of the plurality of subpixels includes an organic light emitting diode and a driving switching element electrically connected to the organic light emitting diode through a contact hole formed in the planarization layer;
The source electrode of the driving switching element is positioned such that the opaque metal overlaps the transparent metal,
The contact hole exposes at least a portion of the opaque metal positioned on the transparent metal,
In the first and second wiring forming steps,
A width of the first wire disposed in the transparent portion is greater than a width of the first wire and the second wire disposed in a stacked manner in the light emitting portion.
10. The method of claim 9, wherein the first and second wires are at least one of a data line, a voltage reference line, and a power supply voltage line.
11. The method of claim 10, wherein the forming of the first and second wires comprises:
forming the first and second wires to overlap;
and removing a part of the second wiring in an area corresponding to the transparent part.
delete delete The method of claim 9 , further comprising forming a plurality of metal patterns on the exposed first wire.

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