KR20170015830A - Transparent display device and method for fabricating thereof - Google Patents

Abstract

In the present invention, disclosed are a transparent display device and a manufacturing method thereof. The disclosed transparent display device according to the present invention includes a substrate which includes a display region composed of a transparent part and a light emitting part, a first wire which intersects the transparent part and the light emitting part on the substrate, and a second wire which is formed on the first wire and exposes the first wire in the transparent part, thereby increasing a transparent area of the transparent part without reducing an area of a sub pixel by forming a power voltage line, a voltage reference line, and a data line corresponding to the transparent part with a transparent metal film.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a transparent display device,

The present invention relates to a transparent display device and a method of manufacturing the same.

BACKGROUND ART Demands for a display device for displaying an image have been increasing in various forms as an information society has developed. Recently, a liquid crystal display device, a plasma display device, an organic light emitting display device Organic Light Emitting Display Device) are being utilized.

There is also a demand for a transparent display device using a transparent element and a transparent display panel therefor.

However, if the panel design is changed in order to increase the transparency of the transparent display panel, the light emitting area is narrowed and the luminous efficiency is lowered. If the luminous efficiency is increased by increasing the light emitting area, transparency is reduced, The problem is that it can not be done.

The present invention provides a transparent display device in which a data line, a voltage reference line, and a power source voltage line corresponding to a transparent portion are formed of a wiring made of a transparent metal and a transparent area of the transparent portion is widened without reducing the area of the sub- .

Further, in the present invention, the signal line and the voltage line corresponding to the transparent portion are formed as the first wiring made of transparent metal, while the signal line corresponding to the sub-pixel including the light-emitting portion and the voltage line are connected to the second wiring Another object of the present invention is to provide a transparent display device capable of widening the transparent area while maintaining the lifetime of the device by having a laminated structure of a first wiring made of a transparent metal and a first wiring.

Further, according to the present invention, a signal line and a voltage line corresponding to a transparent portion using a halftone mask or a diffraction mask are formed by a first wiring made of a transparent metal, and a signal line corresponding to a sub- Another object of the present invention is to provide a method of manufacturing a transparent display device in which a line has a laminated structure of a second wiring made of an opaque metal and a first wiring made of a transparent metal so that the transparent area can be widened without increasing the process .

According to an aspect of the present invention, there is provided a transparent display device including a substrate having a display region including a transparent portion and a light emitting portion, a first wiring crossing the transparent portion and the light emitting portion, And a second wiring provided on the wiring, wherein the first wiring is exposed in the transparent portion.

Here, the first and second wirings are at least one of a data line, a voltage reference line, and a power supply voltage line, and a black matrix is disposed in a region corresponding to the second wiring, Wherein the second wiring is an opaque metal, the first wiring is a transparent metal, and the width of the exposed first wiring corresponding to the transparent portion is A plurality of metal patterns are provided on the exposed first wiring corresponding to the transparent portion, and the plurality of metal patterns are the same opaque metal as the second wiring, The corresponding data lines, the voltage reference lines, and the power source voltage lines are transparent metal films and have the effect of widening the transparent area of the transparent portion without reducing the area of the subpixel.

According to another aspect of the present invention, there is provided a method of manufacturing a transparent display device, including: providing a substrate having a transparent portion and a display region defined by the light-emitting portion; forming a first wiring across the transparent portion and the light- And forming a second wiring so that the first wiring is exposed in a region corresponding to the transparent portion while overlapping the wiring, the data line, the voltage reference line, and the power source voltage line corresponding to the transparent portion are formed on the transparent metal film , There is an effect that the transparent area of the transparent portion is widened without reducing the area of the subpixel.

In the transparent display device according to the present invention, the data lines, the voltage reference lines, and the power supply voltage lines corresponding to the transparent portions are formed of wirings made of transparent metal, thereby widening the transparent area of the transparent portion without reducing the area of the subpixel .

Further, in the transparent display device according to the present invention, the signal line and the voltage line corresponding to the transparent portion are formed by the first wiring made of transparent metal, and the signal line and the voltage line corresponding to the sub pixel including the light- The second wiring and the first wiring made of a transparent metal are provided so as to have a laminated structure of the transparent wiring and the transparent wiring.

Further, in the method of manufacturing a transparent display device according to the present invention, a signal line and a voltage line corresponding to a transparent portion using a halftone mask or a diffraction mask are formed of a first wiring made of a transparent metal, The signal line and the voltage line corresponding to the first wiring and the second wiring have the laminated structure of the second wiring made of the opaque metal and the first wiring made of the transparent metal, so that the transparent area can be widened without increasing the process.

1 is a schematic system configuration diagram of a transparent display device according to the present invention.
2 is a plan view showing a pixel structure of a transparent display device according to the present invention.
3 is a sectional view taken along the line I-I 'of FIG. 2;
4 is a sectional view taken along line II-II 'of FIG.
5A is a plan view and a cross-sectional view of the region A of FIG.
5B is a plan view and a cross-sectional view of the region B of FIG.
6A to 6E are diagrams showing the manufacturing process of the area A and the area B in FIG.
FIG. 7 is a diagram illustrating structures of the A region and the B region among the data lines of FIG. 2 according to another embodiment of the present invention.
FIGS. 8A and 8B are diagrams showing another embodiment of the present invention for the area A of FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if a temporal posterior relationship is described by 'after', 'after', 'after', 'before', etc., 'May not be contiguous unless it is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

1 is a schematic system configuration diagram of a transparent display device according to the present invention.

1, a transparent display device 100 according to the present invention includes a plurality of data lines DL to DLm and a plurality of gate lines GL1 to GLn, and a plurality of sub pixels A data driver 120 for driving the plurality of data lines DL to DLm, a gate driver 130 for driving the plurality of gate lines GL1 to GLn, A timing controller 140 for controlling the gate driver 120 and the gate driver 130, and the like. Here, the data driver 120 and the gate driver 130 correspond to drivers for driving the subpixels.

The data driver 120 drives a plurality of data lines by supplying data voltages to the plurality of data lines.

The gate driver 130 sequentially supplies the scan signals to the plurality of gate lines to sequentially drive the plurality of gate lines.

The timing controller 140 controls the data driver 120 and the gate driver 130 by supplying various control signals to the data driver 120 and the gate driver 130.

The timing controller 140 starts scanning in accordance with the timing implemented in each frame, switches the input image data input from the outside according to the data signal format used by the data driver 120, and outputs the converted image data , And controls the data driving at a suitable time according to the scan.

The gate driver 130 sequentially supplies the scan signals of the On voltage or the Off voltage to the plurality of gate lines and sequentially drives the plurality of gate lines under the control of the timing controller 140.

1, the gate driver 130 may be located on only one side of the transparent display panel 110, or may be located on both sides, depending on the driving method, the transparent display panel designing method, and the like.

In addition, the gate driver 130 may include one or more gate driver integrated circuits.

Each gate driver integrated circuit may be connected to a bonding pad of the transparent display panel 110 by a tape automation bonding (TAB) method or a chip on glass (COG) ) Type, and may be directly disposed on the transparent display panel 110, and may be integrated and disposed on the transparent display panel 110, as the case may be.

Each gate driver integrated circuit can be implemented by a chip on film (COF) method. In this case, the gate driver chip corresponding to each gate driver integrated circuit is mounted on the flexible film, and one end of the flexible film can be bonded to the transparent display panel 110. [

When the specific gate line is opened, the data driver 120 converts the image data received from the timing controller 140 into an analog data voltage and supplies the data voltage to a plurality of data lines to drive the plurality of data lines.

The data driver 120 may include at least one source driver integrated circuit to drive a plurality of data lines.

Each source driver integrated circuit may be connected to a bonding pad of the transparent display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method, or may be connected to a transparent display panel 110 And may be integrated and disposed on the transparent display panel 110, as the case may be.

In addition, each source driver integrated circuit may be implemented by a chip on film (COF) method. In this case, the source driver chip corresponding to each source driver integrated circuit is mounted on a flexible film, one end of the flexible film 121 is bonded to at least one source printed circuit board, And is bonded to the transparent display panel 110.

The source printed circuit board is connected to a control printed circuit board through a connection medium such as a flexible flat cable (FFC) or a flexible printed circuit (FPC).

On the control printed circuit board, a timing controller 140 is disposed.

A power controller (not shown) for controlling various voltages or currents to supply or supply various voltages or currents to the transparent display panel 110, the data driver 120, the gate driver 130, .

The source printed circuit board and the control printed circuit board mentioned above may be a single printed circuit board.

The transparent display device 100 according to the present embodiments may be a liquid crystal display device, an organic light emitting display device, or the like. Hereinafter, for convenience of explanation, it is assumed that the transparent display device 100 is an organic light emitting display device.

On the other hand, the transparent display panel 110 is composed of a transparent region having a plurality of transparent portions and a non-transparent opaque region.

In the transparent region, a plurality of transparent portions are arranged in a matrix type.

Here, regarding the plurality of transparent portions arranged in a matrix type, the plurality of transparent portions arranged in the same row are one transparent portion row, and the plurality of transparent portions arranged in the same column are one transparent portion It is called the column.

The opaque region is composed of a light emitting portion (EA) emitting light and a non-emitting portion (NEA) not emitting light.

The non-light emitting portion may have a column line area (CLA) in which column lines are arranged. The column wirings are connected to the data lines Vdata1, Vdata2, Vdata3, Vdata4, ..., the voltage reference lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, ..).

The column wiring region is a region between the transparent portion and the row of light emitting portions. That is, the column wirings are disposed between the pair of transparent portions and the row of light emitting portions.

The column wirings include data lines arranged in the column direction, various voltage wirings, and the like.

The light emitting portion may be defined as each sub-pixel.

Each subpixel may be, for example, a red subpixel that emits red light, a green subpixel that emits green light, a blue subpixel that emits blue light, Green, and other colors (e.g., white, yellow, etc.) other than blue.

Each sub-pixel includes a light emitting portion in which light of a corresponding color is emitted and a circuit portion in which a circuit element such as a transistor is disposed so that light is emitted from the light emitting portion.

For example, when there are subpixels of three colors (first color, second color, third color) in the transparent display panel 110 according to the present invention, the first color subpixel is a first color subpixel And the second color subpixel includes a second color light emitting portion and a second color circuit portion and the third color subpixel may include a third color light emitting portion and a third color circuit portion have.

For example, when there are subpixels of four colors (first color, second color, third color, fourth color) in the transparent display panel 110 according to the present invention, Pixel includes a first color light emitting portion and a first color circuit portion, a second color sub-pixel includes a second color light emitting portion and a second color circuit portion, a third color sub- And the fourth color subpixel may include a fourth color light emitting portion and a fourth color circuit portion.

The light emitting unit of each subpixel may mean a region emitting light of a corresponding color for each subpixel and may mean a pixel electrode (for example, an anode) existing for each subpixel, or an area where the pixel electrode is disposed You may.

The circuit portion of each subpixel means a circuit including a transistor or the like that supplies a voltage or a current to a pixel electrode of each subpixel so that light is emitted from the light emitting portion or may mean an area where such a circuit is arranged.

In the transparent display panel 110 according to the embodiments of the present invention, the light emitting portion of the at least one color subpixel among the subpixels of various colors (e.g., white, red, green, blue, etc.) can do.

For example, when four color subpixels are disposed on the transparent display panel 110 according to the present invention, the first color light emitting portion, the second color light emitting portion, the third color light emitting portion, and the fourth color light emitting portion At least one may be located in the column wiring region or overlapping the column wiring region.

As described above, since the light emitting portion of at least one color subpixel is located in the column wiring region or overlaps with the column wiring region, the viewing angle, light emitting area, and transmissive area of the transparent display panel 110 can be widened .

Meanwhile, in the transparent display panel 110 according to the present invention, a plurality of subpixels may be arranged in a WRGB structure, and a structure in which two pixels are composed of four subpixels (hereinafter referred to as " 2P-4SP structure & A plurality of sub-pixels may be arranged.

When a plurality of subpixels are arranged in the 2P-4SP structure in the transparent display panel 110 according to the present invention, the same resolution can be similarly expressed by a small number of subpixels as compared with the WRGB structure. In particular, by reducing the number of subpixels, the transparency of the transparent display panel 110 can be improved.

When a plurality of subpixels are arranged in the 2P-4SP structure in the transparent display panel 110 according to the present invention, a subpixel rendering technique may be used.

The 2P-4SP structure applied to the transparent display panel 110 according to embodiments of the present invention may include, for example, an RG-BG structure, an RG-BW structure, and the like.

2 is a plan view showing a pixel structure of a transparent display device according to the present invention.

Referring to FIG. 2 together with FIG. 1, a transparent display panel 110 according to the present invention includes a plurality of transparent portions TA ji, j (row number) = 1, 2, 1, 2, 3, ... are arranged in a matrix type.

In the transparent display panel 110 according to the present invention, a subpixel row exists between transparent rows.

For example, between the first transparent row (TA 11, TA 12, TA 13, TA 14) and the second transparent row (TA 21, TA 22, TA 23, TA 24, Sub-pixel rows W11, R12, G13, B14, ... are arranged. Each subpixel consists of white (W), red (R), green (G) and blue (B) subpixels, which can be defined as one pixel.

Similarly, WRGB subpixel rows W21, R22, G23, B24, ... are arranged between the second transparent sub-rows TA 21, TA 22, TA 23, TA 24, .

In the transparent display panel 110 according to the present invention, each sub-pixel is divided into an emitting area (EA) and a non-emitting area (NEA), and a circuit part for controlling the emitting area (EA) (EA) and in the non-light emitting portion (NEA).

In the present invention, the subpixels W11, W21 / R12, R22 / G13, G23 / B14 and B24 and the transparent columns TA11, TA21 / TA12, TA22 / TA13, TA23 / TA14 and TA24 .

Data lines Vdata1 and Vdata2 are connected between the subpixels W11, W21 / R12, R22 / G13, G23 / B14 and B24 and transparent columns TA11, TA21 / TA12, TA22 / TA13, TA23 / The voltage reference lines Vref1, Vref2, Vref3 and Vref4 and the power supply voltage lines VDD1, VDD2, VDD3 and VDD4 are alternately arranged.

In the present invention, the column wiring arranged in the transparent portion and the row of the light emitting portion is formed in a structure in which the first wiring and the second wiring are laminated, the first wiring is formed of a transparent conductive material (metal), and the second wiring is opaque It is formed of metal. Vdata2, Vdata3, Vdata4, ..., the voltage reference lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4,...)), The second wiring on the first wiring is removed, and the first wiring is exposed so that the wirings for defining the transparent portion are made transparent so that the transparent area of the transparent portion is widened.

For example, data located in the first transparent sub-row (TA 11, TA 12, TA 13, TA 14, ..) and the second transparent sub-row (TA 21, TA 22, TA 23, TA 24, The voltage reference lines Vref1, Vref2, Vref3, Vref4 ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4, ... are made of a transparent conductive material The first wiring is exposed.

On the other hand, the data lines (W11, R12, G13, B14, ...) and the second WRGB subpixel rows (W21, R22, G23, B24, Vdata1, Vdata2, Vdata3, Vdata4, ..., the voltage reference lines Vref1, Vref2, Vref3, Vref4, .. and the power supply voltage lines VDD1, VDD2, VDD3, VDD4, And a first wiring made of a transparent conductive material are stacked.

Therefore, in the transparent display panel 110 of the present invention, the non-emission area NEA of the WRGB subpixels and the data lines Vdata1, Vdata2, Vdata3, Vdata4, .., corresponding to the WRGB subpixels, The black matrix BM is arranged only in the region of the color filter substrate corresponding to the lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4,

As described above, according to the present invention, the area of the transparent portion can be widened without reducing the emission region of the subpixel, and the transmittance can be improved without decreasing the lifetime of the organic light emitting display.

Further, in the present invention, since the second wiring (opaque metal film) of the data line, the voltage reference line, and the power source voltage line in the region corresponding to the transparent portion is removed, the transparent area of the organic light- There is an effect.

FIG. 3 is a cross-sectional view taken along the line I-I 'of FIG. 2. FIG. 4 is a cross-sectional view taken along line II-II' of FIG.

Referring to FIG. 3 and FIG. 4 together with FIG. 2, the organic light emitting display of the present invention includes a plurality of WRGB subpixels W11, R12, G13, B14, .. W21, R22, G23, B24, And a plurality of transparent portions TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, .. for each subpixel.

(W11), red (R12), green (G13), and blue (B14) light-emitting diodes are formed on the first substrate 200. The organic light- A thin film transistor (TFT) is disposed in a region where subpixels are divided, and a first electrode 261, an organic emission layer 262, and a second electrode 263 are formed on the driving switching TFT And a configured organic light emitting diode 264 is disposed.

On the other hand, in the region where the plurality of transparent portions TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, The data lines Vdata1, Vdata2, Vdata3, Vdata4, ..., and the voltage reference lines Vref1, Vref2, Vref3, Vref4, ... are stacked on the protective film 204. The insulating films 202, And power supply voltage lines VDD1, VDD2, VDD3, VDD4, ... are arranged.

On the data lines Vdata1, Vdata2, Vdata3, Vdata4, ..., the voltage reference lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4, A bank layer 270 partitioning each transparent portion on the planarization layer 206 and an organic emission layer 262 and a second electrode 263 of the organic light emitting diode in each transparent region.

That is, the first electrode 261 of the organic light emitting diode formed in the sub pixel region is not disposed in the transparent portion of the OLED display, and the organic light emitting layer 262 and the second electrode 263 are stacked.

The color filter substrate, which faces the array substrate and is sandwiched with the sealing layer 260 therebetween, includes a black matrix BM (black matrix) for partitioning WRGB subpixels on a second substrate 301, which is a transparent insulating substrate, A W color filter layer W CF, a red color filter layer R CF and a green color filter layer G CF are formed in a sub pixel region partitioned by the black matrix BM. And a blue (B) color filter layer (B CF) are disposed.

The driving switching element TFT includes a gate electrode G, a gate insulating film 202, an active layer ACT, a protective film 204, a drain electrode D and a source electrode S, The transparent portions are partitioned by the bank layer 270.

The subpixels W11, W21 / R12, R22 / G13, G23 / B14 and B24 arranged in the vertical column direction and the transparent portions corresponding to the subpixels of the present invention, Data lines Vdata1, Vdata2, Vdata3, Vdata4, ..., and voltage reference lines Vref1, Vref2, Vref3, Vref4, ... are connected between the columns TA11, TA21 / TA12, TA22 / TA13, TA23 / And power supply voltage lines VDD1, VDD2, VDD3, VDD4, ... are alternately arranged.

Particularly, in the present invention, the data lines Vdata1, Vdata2, Vdata3, and Vdata3 corresponding to the transparent portions TA11, TA12, TA13, TA14, ... TA21, TA22, TA23, The voltage reference lines Vref1, Vref2, Vref3, Vref4 ... and the power source voltage lines VDD1, VDD2, VDD3, VDD4, ... are made of transparent conductive materials (ITO, IZO, ITZO) Layer wiring, thereby increasing the transparent area of the transparent portion.

Accordingly, the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ...) corresponding to the WRGB subpixels (W11, R12, G13, B14, ... W21, R22, G23, B24, The voltage reference lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4, ... are connected to the first wiring made of transparent conductive materials (ITO, IZO, ITZO) A column wiring of a laminated structure of a second wiring made of a material is formed.

Therefore, in the present invention, the transparent area of the transparent part can be widened without reducing the area of the sub-pixels, thereby improving the aperture ratio of the transparent part while maintaining the lifetime of the device.

≪ Transparent display device manufacturing method >

A method of manufacturing the transparent display device of the present invention will be described below.

First, a first substrate 200 made of a transparent insulating substrate is provided for manufacturing an array substrate, a gate metal film is formed on the first substrate 200 by a sputtering process, and then a photolithograph process (Not shown) connected to the gate electrode G of the driving switching element TFT, a gate line (not shown) connected to the gate electrode G, and a gate pad .

The gate metal layer may include at least one of aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum A low resistance opaque conductive material such as molybdenum (Mo), titanium (Ti), platinum (Pt), tantalum (Ta)

In addition, a multi-layer structure in which a transparent conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) and an opaque conductive material are stacked can be formed.

Since a plurality of switching elements are arranged in each pixel region of the organic light emitting diode display device, when the gate electrode G of the driving switching transistor TFT is formed, A gate electrode is also formed.

As described above, when the gate electrode G is formed for each sub-pixel, a gate insulating film 202 made of silicon oxide (SiO 2) or silicon nitride (SiN x) is formed on the first substrate 200 As shown in Fig.

A semiconductor layer is formed on the entire surface of the first substrate 200 on which the gate insulating layer 202 is formed and is patterned by a photolithography process and an etching process to form a gate electrode G corresponding to the gate electrode G of the drive switching TFT An active pattern ACT is formed on the gate insulating film 202. [

The semiconductor layer may be amorphous silicon or crystalline silicon. The semiconductor layer may be formed of an oxide semiconductor layer.

The oxide semiconductor layer may be formed of an amorphous oxide including at least one of indium (In), zinc (Zn), gallium (Ga), and hafnium (Hf). For example, when a Ga-In-Zn-O oxide semiconductor is formed by a sputtering process, each target formed of In2O3, Ga3O3, and ZnO may be used, or a single target of Ga-In-Zn oxide may be used. When a hf-In-Zn-O oxide semiconductor is formed by a sputtering process, each target formed of HfO 2, In 2 O 3 and ZnO may be used or a single target of Hf-In-Zn oxide may be used .

A protective film 204 made of silicon oxide (SiO 2) or silicon nitride (SiNX) is formed on the entire surface of the first substrate 200 on which the active pattern ACT is formed. A contact hole process is performed to expose a part of the active pattern ACT.

When a contact hole is formed on the passivation layer 204 as described above, a source / drain metal layer is formed on the entire surface of the first substrate 200 and the source and drain electrodes S and D are formed by a photolithography process and an etching process. .

The source electrode S and the drain electrode D are electrically connected to the active pattern ACT through a contact hole formed in the passivation layer 204.

The source / drain metal layer may include a first metal layer made of a transparent conductive material such as indium tin oxide (In-Zinc-Oxide), tungsten (WO) , A second low-resistance opaque conductive material such as aluminum (Al), an aluminum alloy, tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), titanium, A metal film is formed by laminating.

Thereafter, source and drain electrodes S and D are formed by a mask process using a halftone mask or a diffraction mask.

In forming the source and drain electrodes S and D, the data lines Vdata1, Vdata2, Vdata3, Vdata4, ..., the voltage reference lines Vref1, Vref2, Vref3, Vref4, VDD1, VDD2, VDD3, VDD4, ...) and pads (not shown) formed in these lines are simultaneously formed.

In particular, in the present invention, the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ..) corresponding to the WRGB subpixels W11, R12, G13 and B14, the voltage reference lines Vref1 And the power supply voltage lines VDD1, VDD2, VDD3, VDD4, ... are formed by stacking a first wiring made of the first metal film and a second wiring made of the second metal film .

On the other hand, the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ...) corresponding to the transparent portions TA11, TA12, TA13, TA14, ... TA21, TA22, TA23, TA24. The voltage reference lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4, The second wiring formed of the opaque metal on the transparent portion was removed to increase the transparent area of the transparent portion.

Therefore, in a region corresponding to the transparent portions TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, .. in accordance with the halftone mask or the diffraction mask process, Constituting the voltage reference lines Vref1, Vref2, Vref3, Vref4, ... and the power supply voltage lines VDD1, VDD2, VDD3, VDD4, The process of removing the metal film proceeds (the more specific process will be described in Figs. 6A to 6E)

As described above, when the source and drain electrodes S and D are formed on the first substrate 200, organic insulating materials such as an acryl based organic compound, a benzo-cyclo-butene (BCB) or a perfluorocyclobutane (PFCB) A planarizing film 206 made of a material is formed on the entire surface.

Then, a mask process is performed to form a contact hole for exposing the source electrode S of the drive switching device TFT in the planarization film 206. [

When the contact hole is formed in the planarization layer 206 as described above, aluminum (Al), silver (Ag), or an alloy thereof is formed on the first substrate 200 by a sputtering method, and then a photolithography process and an etching process The first electrode 261 of the organic light emitting diode 264 serving as an anode in units of white (W), red (R), green (G) and blue (B) subpixels is formed.

At this time, the first electrode 261 is not formed in a region corresponding to the transparent portions TA11, TA12, TA13, TA14, ... TA21, TA22, TA23, TA24,.

The first electrode 261 is electrically connected to a source electrode S of a driving switching element TFT through a contact hole formed on the planarization layer 206. [

As described above, when the first electrode 261 of the organic light emitting diode 264 is formed on the planarization layer 206, an organic layer is formed on the entire surface of the first substrate 200, and then the white W, The bank layer 270 is formed such that the first electrode 261 is exposed in the red (R), green (G), and blue (B) sub-pixels.

As described above, when the bank layer 270 is formed on the first substrate 200, the first electrode 261 of white (W), red (R), green (G), and blue (B) An organic emission layer 262 is formed. The organic light emitting layer 262 is formed by successively depositing a hole injecting layer material, a hole transporting layer material, a light emitting layer material, an electron transporting layer material, and an electron injection layer material in a thermal evaporation process, An organic light emitting layer 262 including a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL) and an electron injection layer (EIL) is formed.

The light emitting layer EML may be formed as a light emitting layer that emits white light or may be formed as a light emitting layer that emits red (R), green (G), and blue (B) .

When the organic light emitting layer 262 is formed on the first substrate 200 as described above, a second electrode 263 serving as a cathode is formed on the entire surface of the first substrate 200, and the organic light emitting diode 264 ).

At this time, a bank layer 270 is formed on the planarization film 206 in the regions of the transparent portions TA11, TA12, TA13, TA14, ... TA21, TA22, TA23, TA24, .., and the organic light emitting diode 264 Emitting layer 262 and the second electrode 263 are stacked.

The second electrode 263 is formed of a transparent conductive material layer so as to transmit light generated in the organic light emitting layer 262. The transparent conductive material layer may be formed of tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).

As described above, when the array substrate composed of the driving switching element (TFT) and the organic light emitting diode 264 is completed, the white (W), red (R), green (G) and blue (B) color filter layers W CF, R CF, G CF, and B CF).

The color filter substrate used in the transparent display device of the present invention has a non-light-emitting portion NEA of the WRGB sub-pixels W11, R12, G13, B14, ... W21, R22, G23, B24, A plurality of transparent portions TA 11, TA 12, TA 13, TA 14, ... TA 21, TA 22, TA 23, TA 24, ... are not formed in the region corresponding to the black matrix BM.

Then, a white W color filter layer W (W) is formed between the WRGB subpixels W11, R12, G13, B14, ..., W21, R22, G23, B24, (CF), a red (R) color filter layer (R CF), a green (G) color filter layer (G CF) and a blue (B) color filter layer (B CF) are formed.

As described above, when the color filter substrate is completed, the array substrate and the sealing layer 260 are sandwiched therebetween to complete the OLED display.

As described above, in the transparent display device according to the present invention, the data line, the voltage reference line, and the power source voltage line corresponding to the transparent portion are exposed to the first wiring made of transparent metal, and the area of the sub- There is an effect that the transparent area of the transparent portion is widened without reducing.

Further, in the transparent display device according to the present invention, the signal lines and the voltage lines corresponding to the transparent portions are formed of a transparent metal film, while the signal lines and the voltage lines corresponding to the sub pixels have a laminated structure of opaque metal and transparent metal , It is possible to widen the transparent area while maintaining the lifetime of the device.

FIG. 5A is a plan view and a cross-sectional view of the region A of FIG. 2, and FIG. 5B is a plan view and a cross-sectional view of the region B of FIG.

Here, although the first data line among the data lines (Vdata1, Vdata2, Vdata3, Vdata4, ...) of FIG. 2 is described as being centered, other data lines and voltage reference lines (Vref1, Vref2, Vref3, Vref4, And the power supply voltage lines VDD1, VDD2, VDD3, VDD4,.

5A and 5B together with FIGS. 3 and 4, the organic light emitting display according to the present invention is characterized in that the WRGB subpixels W11, R12, G13 and B14 and the corresponding data line Vdata1 are made of a transparent metal The data lines Vdata1 located in the transparent portions TA11 are formed in a structure in which the first wirings ML1 and the second wirings ML2 made of an opaque metal are laminated and the second wirings ML2 are removed, 1 wiring (ML1) is exposed to the outside (A region is a data line of a transparent portion region, and B region is a data line of a sub pixel region).

A transparent region of the A region is formed by stacking a gate insulating layer 202 and a protective layer 204 on the first substrate 200 and forming a first wiring The data line Vdata1 formed of the data line ML1 is formed.

A first wiring ML1 made of a transparent conductive material and a second wiring ML2 made of an opaque conductive material are formed on the protective film 204. The first wiring ML1 made of a transparent conductive material and the second wiring ML2 made of an opaque conductive material are formed on the protective film 204, ) Are stacked on the data line Vdata1.

Therefore, in the present invention, the data lines Vdata1, Vdata2, Vdata3, Vdata4, ..., the voltage reference lines Vref1, Vref2, Vref3, Vref4, .., and the power source voltage lines VDD1, VDD2, , VDD4,...) Are exposed to increase the transparent area of the transparent portion.

6A to 6E are diagrams showing the manufacturing process of the area A and the area B in FIG.

FIGS. 6A to 6E are specific manufacturing steps in the case of using a halftone mask or a diffraction mask in the steps of forming the source and drain electrodes S and D in FIGS. Therefore, the description will focus on the portions distinguished based on the manufacturing process of the OLED display devices of FIGS. 3 and 4. FIG.

6A and 6B, the first and second metal films L1 and L2, which are source / drain metal films, are formed on the first substrate 200 on which the protective film 204 is formed in the process of manufacturing the transparent display device of the present invention. The photoresist is formed on the first substrate 200, and then the first photoresist layer 400 is formed on the second metal layer L2 by performing the exposure and development processes.

The first metal film L1 is a transparent conductive material such as indium tin oxide, indium zinc oxide, tungsten, ITZO, The second metal film L2 is a low resistance opaque material such as aluminum (Al), an aluminum alloy, tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), titanium, Conductive material.

The first photoresist pattern 300 is formed of first and second photoresist patterns 400a and 400b having different thicknesses. The first photoresist pattern 400a corresponding to a sub-pixel corresponds to a transparent portion A region is formed thicker than the second photoresist pattern 400b.

As described above, when the first photoresist layer 400 is formed on the first substrate 200, a preliminary data line including the first and second wirings ML1 and ML2 is formed by etching.

Then, an ashing process is performed to remove the second photoresist pattern 400b of the A region, thereby exposing the second wiring ML2 to the outside. At this time, the second photoresist pattern 400a in the B region becomes the second photoresist 402 having a reduced thickness in the ashing process.

As described above, when the second metal film ML2 of the transparent part is exposed to the outside, the etching process is performed to remove the second wiring ML2 on the first wiring ML1, The second photoresist layer 402 remaining on the sub-pixel is removed to form the data line Vdata.

Therefore, in the present invention, the data line (Vdata) located in the sub-pixel region has a structure in which the first and second wirings (ML1, ML2) are stacked, and the data line (Vdata) 1 wiring ML1, thereby increasing the transparent area of the transparent portion.

In addition, in the present invention, the data line, the power supply voltage line, and the voltage reference line portions corresponding to the transparent portion, the first wiring line made of a transparent metal are exposed without an additional mask process, and the data line, The power supply voltage line and voltage reference line portions may be formed so that the second wiring made of opaque metal and the first wiring made of transparent metal are laminated.

FIG. 7 is a diagram illustrating the structure of the A region and the B region among the data lines of FIG. 2 according to another embodiment of the present invention, and FIGS. 8A and 8B are views showing another embodiment Fig.

7 to 8B, the data line Vdata1 arranged in the organic light emitting display according to the present invention is formed in a structure in which the first wiring ML1 and the second wiring ML2 are stacked in the subpixel region, And in the transparent portion region, the first wiring ML1 from which the second wiring ML2 is removed.

In addition, the width D1 of the data line in the sub pixel area and the data line width D2 in the transparent area can be made different from each other. In particular, since the data line formed in the transparent area is formed of the first wiring ML1 of the transparent conductive material having high resistance, the area of the data line is widened to reduce the resistance.

On the other hand, since the first line ML1 of the transparent conductive material and the second line ML2 of the low-resistance opaque conductive material are laminated on the data line formed in the sub-pixel region, the width D1 of the data line is narrowed, Respectively.

A data line formed in the transparent portion of the data line formed in the transparent display device of the present invention is formed by forming a plurality of first metal patterns MP1 in the form of a dot on the first wiring ML1, There is an effect that the resistance of the data line corresponding to the transparent portion can be reduced.

As shown in FIG. 8A, the data line Vdata1 formed in the transparent region of the present invention has a plurality of first metal patterns MP1 formed on a transparent first wiring ML1 at predetermined intervals .

A gate insulating layer 202 and a passivation layer 204 are stacked on the first substrate 200 and the first wiring ML1 and the first wiring ML1 are formed on the passivation layer 204, A plurality of first metal patterns MP1 are formed at predetermined intervals on the first metal patterns ML1.

Referring to FIG. 8B, it can be seen that a plurality of second metal patterns MP2 are formed on the transparent first wiring ML1 in the data line Vdata1 formed in the transparent region of the present invention.

The second metal pattern MP2 may be composed of a plurality of slit patterns parallel to the data line Vdata1 and the slit patterns constituting the second metal pattern MP2 may include a data line Or may be formed integrally with or separated from the second wiring ML2.

A transparent insulating layer 202 and a passivation layer 204 are stacked on the first substrate 200. A first wiring ML1 and a second wiring ML2 are formed on the passivation layer 204, It can be seen that a plurality of second metal patterns MP1 are formed on the wiring ML1 at predetermined intervals.

As described above, in the transparent display device according to the present invention, the data lines, the voltage reference lines, and the power supply voltage lines corresponding to the transparent portions are formed of wirings made of transparent metal, and the transparent areas of the transparent portions are widened It is effective.

Further, in the transparent display device according to the present invention, the signal line and the voltage line corresponding to the transparent portion are formed by the first wiring made of transparent metal, and the signal line and the voltage line corresponding to the sub pixel including the light- The second wiring and the first wiring made of a transparent metal are provided so as to have a laminated structure of the transparent wiring and the transparent wiring.

100: transparent display device
120: gate driver
130: Data driver
140: Timing controller
200: first substrate
202: gate insulating film
204: Shield
206: planarization film
261: first electrode
262: organic light emitting layer
263: Second electrode

Claims (14)

A substrate having a display region made up of a transparent portion and a light emitting portion;
A first wiring crossing the transparent portion and the light emitting portion on the substrate; And
And a second wiring which is provided on the first wiring and in which the first wiring is exposed in the transparent portion.
The transparent display device according to claim 1, wherein the first and second wirings are at least one of a data line, a voltage reference line, and a power supply voltage line.
The transparent display device according to claim 1, wherein a black matrix is disposed in a region corresponding to the second wiring.
The transparent display device according to claim 1, wherein the light emitting portion is disposed in units of white (W), red (R), green (G), and blue (B).
The transparent display device according to claim 1, wherein the second wiring is an opaque metal and the first wiring is a transparent metal.
The transparent display device according to claim 1, wherein a width of the exposed first wiring corresponding to the transparent portion is larger than a width of the second wiring.
The transparent display device according to claim 1, wherein a plurality of metal patterns are provided on the exposed first wiring corresponding to the transparent portion.
The transparent display device according to claim 7, wherein the plurality of metal patterns are the same opaque metal as the second wiring.
Providing a substrate having a display area defined by a transparent portion and a light-emitting portion;
Forming a first wiring across the transparent portion and the light emitting portion; And
And forming a second wiring so that the first wiring is exposed in a region corresponding to the transparent portion while being overlapped with the first wiring.
10. The method of claim 9, wherein the first and second wires are at least one of a data line, a voltage reference line, and a power supply voltage line.
11. The method of claim 10, wherein the first and second wiring formation steps comprise:
Forming the first and second wirings so as to overlap each other;
And removing a portion of the second wiring in the region corresponding to the transparent portion.
10. The method according to claim 9, wherein the first wiring is a transparent metal and the second wiring is an opaque metal.
13. The method according to claim 12, wherein a width of the exposed first wiring corresponding to the transparent portion is larger than a width of the second wiring.
10. The method according to claim 9, wherein a plurality of metal patterns are formed on the exposed first wiring.

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