KR102643527B1 - 지지체 분리 장치 및 지지체 분리 방법 - Google Patents

지지체 분리 장치 및 지지체 분리 방법 Download PDF

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Publication number
KR102643527B1
KR102643527B1 KR1020160171380A KR20160171380A KR102643527B1 KR 102643527 B1 KR102643527 B1 KR 102643527B1 KR 1020160171380 A KR1020160171380 A KR 1020160171380A KR 20160171380 A KR20160171380 A KR 20160171380A KR 102643527 B1 KR102643527 B1 KR 102643527B1
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KR
South Korea
Prior art keywords
support
laminate
substrate
light
separation
Prior art date
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KR1020160171380A
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English (en)
Korean (ko)
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KR20170096936A (ko
Inventor
기미히로 나카다
세이지 오이시
아키히코 나카무라
Original Assignee
아이메카테크 가부시키가이샤
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Publication of KR20170096936A publication Critical patent/KR20170096936A/ko
Application granted granted Critical
Publication of KR102643527B1 publication Critical patent/KR102643527B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020160171380A 2016-02-17 2016-12-15 지지체 분리 장치 및 지지체 분리 방법 KR102643527B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016028387A JP6612648B2 (ja) 2016-02-17 2016-02-17 支持体分離装置及び支持体分離方法
JPJP-P-2016-028387 2016-02-17

Publications (2)

Publication Number Publication Date
KR20170096936A KR20170096936A (ko) 2017-08-25
KR102643527B1 true KR102643527B1 (ko) 2024-03-06

Family

ID=59683214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160171380A KR102643527B1 (ko) 2016-02-17 2016-12-15 지지체 분리 장치 및 지지체 분리 방법

Country Status (3)

Country Link
JP (1) JP6612648B2 (zh)
KR (1) KR102643527B1 (zh)
TW (1) TWI703626B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150610A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
JP2000150456A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の分離装置及び分離方法
JP2004064040A (ja) * 2002-06-03 2004-02-26 Three M Innovative Properties Co 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP2013004845A (ja) * 2011-06-20 2013-01-07 Tokyo Electron Ltd 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021929A (ja) * 2006-07-14 2008-01-31 Tokyo Ohka Kogyo Co Ltd サポートプレート、搬送装置、剥離装置及び剥離方法
JP5926700B2 (ja) * 2013-04-30 2016-05-25 東京応化工業株式会社 支持体分離装置及び支持体分離方法
JP6216727B2 (ja) * 2014-05-08 2017-10-18 東京応化工業株式会社 支持体分離方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150610A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
JP2000150456A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の分離装置及び分離方法
JP2004064040A (ja) * 2002-06-03 2004-02-26 Three M Innovative Properties Co 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP2013004845A (ja) * 2011-06-20 2013-01-07 Tokyo Electron Ltd 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
TWI703626B (zh) 2020-09-01
JP2017147345A (ja) 2017-08-24
TW201730952A (zh) 2017-09-01
KR20170096936A (ko) 2017-08-25
JP6612648B2 (ja) 2019-11-27

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